TWI440241B - Film deposition apparatus - Google Patents

Film deposition apparatus Download PDF

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TWI440241B
TWI440241B TW99120022A TW99120022A TWI440241B TW I440241 B TWI440241 B TW I440241B TW 99120022 A TW99120022 A TW 99120022A TW 99120022 A TW99120022 A TW 99120022A TW I440241 B TWI440241 B TW I440241B
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substrate
thin film
film deposition
deposition apparatus
unit
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TW99120022A
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TW201145639A (en
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Chang-Ho Kang
Hyun-Goo Kwon
Jae-Keun Hyun
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Snu Precision Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Description

薄膜沉積裝置Thin film deposition device

本發明有關一種薄膜沉積裝置,尤其有關一種沉積薄膜於基板上的薄膜沉積裝置及一種含此裝置的薄膜沉積系統。The present invention relates to a thin film deposition apparatus, and more particularly to a thin film deposition apparatus for depositing a thin film on a substrate and a thin film deposition system including the same.

有機發光二極體(OLED)為自發光元件,不需要使用背光,因而在功率上比LCD更有效率。此外,由於OLED具有廣視角及高回應速度,使用OLED形成的顯示器可以顯示高品質影像,既沒有視角上的問題,也沒有後像上的問題。An organic light-emitting diode (OLED) is a self-luminous element that does not require the use of a backlight and is therefore more efficient in power than an LCD. In addition, since the OLED has a wide viewing angle and a high response speed, a display formed using an OLED can display a high-quality image with neither a viewing angle nor a post-image problem.

此類OLED藉由在玻璃基板上堆疊複數個薄膜(例如,有機薄膜或金屬薄膜)來製造。往常,為了沉積複數個薄膜,主要使用叢集方法,其中在圍繞圓形輸送腔室配置且連接至該輸送腔室的複數個單元腔室中,執行一系列單元程序。在此叢集方法中,玻璃基板以水平位置輸送於腔室之間,然後再接受元件處理。叢集方法可連續且快速地執行一系列程序,因而也很有利,因為叢集方法可以輕易更換製造OLED的必需用到的沉積遮罩。Such OLEDs are fabricated by stacking a plurality of films (eg, organic films or metal films) on a glass substrate. Conventionally, in order to deposit a plurality of films, a clustering method is mainly used in which a series of unit processes are performed in a plurality of unit chambers disposed around a circular transport chamber and connected to the transport chamber. In this clustering method, the glass substrate is transported between the chambers in a horizontal position and then subjected to component processing. The clustering method can perform a series of programs continuously and quickly, and is therefore advantageous because the clustering method can easily replace the deposition mask necessary for manufacturing an OLED.

近來,所謂「三色獨立像素方案」為主的OLED已引起注意;該方案在大尺寸基板上,使用精細金屬遮罩(FMM)相繼形成藍色(B)、綠色(G)及紅色(R)發光層。此三色獨立像素方案達成優異的色彩純度及光學效率,且還符合成本效益。Recently, the so-called "three-color independent pixel scheme"-based OLED has attracted attention; this scheme uses a fine metal mask (FMM) to form blue (B), green (G), and red (R) on a large-sized substrate. ) luminescent layer. This three-color, stand-alone pixel solution delivers superior color purity and optical efficiency and is cost effective.

然而,由於三色獨立像素方案必須在獨立程序腔室中相繼形成藍色(B)、綠色(G)及紅色(R)發光層,其中執行單元程序的程序腔室配置成一列的直列式架構適於此三色獨立像素方案。因此,需要將習用的叢集方法轉換成直列式架構。然而,直列式架構的缺點是,由於裝置明顯重疊而增加建立生產線的成本,及由於處理速度慢而降低生產率。However, since the three-color independent pixel scheme must successively form blue (B), green (G), and red (R) light-emitting layers in separate program chambers, the program chambers of the execution unit program are configured as a column of in-line architecture. Suitable for this three-color independent pixel scheme. Therefore, it is necessary to convert the conventional clustering method into an inline architecture. However, the in-line architecture has the disadvantage of increasing the cost of establishing a production line due to the apparent overlap of the devices, and reducing productivity due to slow processing speed.

同時,由於習用的叢集方法在水平放置的基板上執行薄膜沉積(有機薄膜沉積),基板偏斜明顯,製造元件時造成許多困難。還有,大尺寸基板的沉積遮罩由於其沈重的重量達到數百公斤,使得基板偏斜更加明顯,因而也造成諸如基板破損等嚴重問題。At the same time, since conventional clustering methods perform thin film deposition (organic thin film deposition) on a horizontally placed substrate, substrate deflection is conspicuous, causing many difficulties in fabricating components. Also, the deposition mask of the large-sized substrate reaches a few hundred kilograms due to its heavy weight, which makes the substrate deflection more conspicuous, and thus causes serious problems such as damage of the substrate.

因此,以下說明有關一種薄膜沉積裝置,可藉由同時處理複數個基板並將基板及遮罩之沉積/配置的前置時間降到最低,達成高生產率;以及有關一種包括此薄膜沉積裝置的薄膜沉積系統。Accordingly, the following description relates to a thin film deposition apparatus which can achieve high productivity by simultaneously processing a plurality of substrates and minimizing the deposition time of the deposition and arrangement of the substrate and the mask; and a film including the thin film deposition apparatus Deposition system.

還有,以下說明有關一種薄膜沉積裝置,可藉由分享在二或多個程序步驟中共同使用的設備,節省建立生產線的成本;以及有關一種包括此薄膜沉積裝置的薄膜沉積系統。Also, the following description relates to a thin film deposition apparatus which can save the cost of establishing a production line by sharing equipment commonly used in two or more program steps; and a thin film deposition system including the thin film deposition apparatus.

還有,以下說明有關一種薄膜沉積裝置,可藉由在使基板垂直站立後執行薄膜沉積,防止基板落下;以及有關一種包括此薄膜沉積裝置的薄膜沉積系統。Further, the following description relates to a thin film deposition apparatus which can prevent the substrate from falling by performing film deposition after standing the substrate vertically; and a thin film deposition system including the thin film deposition apparatus.

根據一一般方面,提供一種薄膜沉積裝置,包括:一腔室,其中形成一反應空間;第一及第二基板夾,用於容納基板於其中且彼此隔開;一沉積源,配置於該等第一及第二基板夾之間,以供應一沉積材料至該等基板;及一固定單元,在該等基板分別容納於該等第一及第二基板夾中時,使該等第一及第二基板夾固定於該腔室中的一指定位置持續一預定時間。According to a general aspect, a thin film deposition apparatus is provided, comprising: a chamber in which a reaction space is formed; first and second substrate holders for accommodating substrates therein and spaced apart from each other; a deposition source disposed at the same Between the first and second substrate holders for supplying a deposition material to the substrates; and a fixing unit for causing the first and second substrate holders to be respectively received in the first and second substrate holders The second substrate holder is secured to a designated location in the chamber for a predetermined period of time.

根據另一一般方面,提供一種薄膜沉積系統,包括:複數個單元;及第一及第二程序線,分別安裝在該複數個單元中;其中該複數個單元的至少一個包括:一第一基板夾,形成該第一程序線;一第二基板夾,形成該第二程序線且與該第一基板夾隔開;及一沉積源,配置於該等第一及第二基板夾之間,以供應一沉積材料至該等基板。According to another general aspect, a thin film deposition system is provided, comprising: a plurality of cells; and first and second program lines respectively mounted in the plurality of cells; wherein at least one of the plurality of cells comprises: a first substrate Forming the first program line; forming a second substrate clip to form the second program line and being spaced apart from the first substrate; and a deposition source disposed between the first and second substrate holders To supply a deposition material to the substrates.

因此,根據本發明,由於在各程序腔室中提供的複數個程序線上,透過程序腔室中安裝的沉積源,相繼執行薄膜沉積,可同時減少成本及提高生產率。Therefore, according to the present invention, since a plurality of program lines provided in the respective program chambers are successively subjected to film deposition through a deposition source installed in the program chamber, cost and productivity can be simultaneously reduced.

還有,由於將各程序腔室中輸送的第一及第二基板夾固定於程序腔室中的特定位置,可提高配置基板/遮罩的可靠性。Further, since the first and second substrate holders conveyed in the respective program chambers are fixed to specific positions in the program chamber, the reliability of the placement substrate/mask can be improved.

還有,由於在另一程序線上的另一基板上執行薄膜沉積的同時,在一程序線上執行基板輸送及基板配置/遮罩相對於基板的配置,可減少前置時間,進而提高生產率。Further, since the deposition of the substrate and the arrangement of the substrate arrangement/mask with respect to the substrate are performed on one line on the other substrate on the other line, the lead time can be reduced, thereby improving the productivity.

此外,由於以水平位置輸送基板以防止基板損壞,及在處於垂直站立狀態的基板上執行薄膜沉積,因而減少基板落下,促進元件的製造。Further, since the substrate is transported in a horizontal position to prevent damage of the substrate, and film deposition is performed on the substrate in a vertically standing state, the substrate is reduced in dropping, and the manufacture of the element is promoted.

下文參考附圖詳細說明本發明,其中顯示本發明之示範性具體實施例。不過,本發明可以用許多不同的形式實施而不限於本文所述的示範性具體實施例。事實上,提供這些示範性具體實施例,使得本揭示內容完整詳盡,並將本發明範疇完全傳達給熟習本技術者。圖式中,為了清楚之故,可能誇大層及區域的尺寸及相對尺寸。圖式中,以相同參考符號代表相同元件。The invention is described in detail below with reference to the drawings in which exemplary embodiments of the invention are shown. However, the invention may be embodied in many different forms and not limited to the exemplary embodiments described herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough In the drawings, the dimensions and relative sizes of layers and regions may be exaggerated for clarity. In the drawings, the same reference numerals are used to refer to the same elements.

圖1為圖解根據一具體實施例之薄膜沉積系統的平面圖,及圖2為圖解圖1薄膜沉積系統中所含薄膜沉積裝置的平面圖。1 is a plan view illustrating a thin film deposition system according to an embodiment, and FIG. 2 is a plan view illustrating a thin film deposition apparatus included in the thin film deposition system of FIG. 1.

參考圖1及2,薄膜沉積系統係基於直列式架構,其中複數個單元200及600在作為前段的載入單元110及作為後段的卸載單元120之間配置成一列。此處,單元200及600的每一個包括兩個程序線PL1及PL2(以下稱為第一及第二程序線)。單元程序可在第一及第二程序線PL1及PL2上連續執行,其執行方式使得在第一程序線PL1上執行單元程序時,在第二程序線PL2上完成單元程序的準備。Referring to Figures 1 and 2, the thin film deposition system is based on an in-line architecture in which a plurality of cells 200 and 600 are arranged in a row between the loading unit 110 as the front stage and the unloading unit 120 as the rear stage. Here, each of the units 200 and 600 includes two program lines PL1 and PL2 (hereinafter referred to as first and second program lines). The unit program can be continuously executed on the first and second program lines PL1 and PL2 in such a manner that the unit program preparation is completed on the second program line PL2 when the unit program is executed on the first program line PL1.

載入單元110用以在大氣壓下接收進行預處理的基板G,及將基板G放入在真空狀態中的程序單元。卸載單元120用以從程序單元263接收經過一系列單元程序的基板G,及在大氣壓下將基板G取出以進行後處理。據此,載入單元110及卸載單元120用於在大氣及真空條件之間進行轉換。此外,載入單元110及卸載單元120可分別連接至基板輸送構件(諸如機械手臂)及基板載入構件(諸如基板匣),這兩個構件未在圖中顯示。The loading unit 110 is configured to receive the substrate G for pretreatment under atmospheric pressure, and to place the substrate G into a program unit in a vacuum state. The unloading unit 120 is configured to receive the substrate G that has passed through a series of unit programs from the program unit 263, and take out the substrate G under atmospheric pressure for post-processing. Accordingly, the loading unit 110 and the unloading unit 120 are used to convert between atmospheric and vacuum conditions. Further, the loading unit 110 and the unloading unit 120 may be connected to a substrate conveying member such as a robot arm and a substrate loading member such as a substrate, respectively, which are not shown in the drawings.

單元200及600包括執行單元程序的複數個程序單元(200:210、220、230、240、250、260)及插入在程序單元200之間的複數個吸震器(600:610、620)。吸震器600提供基板G在進入下一個程序之前暫時停留的臨時空間。還有,每個程序單元200的一端連接至將第一沉積遮罩M1供應至第一程序線PL1上的第一遮罩容納單元310。還有,每個程序單元200的另一端連接至將第二沉積遮罩M2供應至第二程序線PL2上的第二遮罩容納單元320。第一遮罩容納單元310及第二遮罩容納單元320分別儲存在薄膜沉積時使用的沉積遮罩M1及M2,或儲存取代沉積遮罩M1及M2的額外沉積遮罩。然而,第一遮罩容納單元310及第二遮罩容納單元320可以是每個程序單元200所連接的單一共用遮罩容納單元。此外,供應材料至沉積源540的進料器可連接至部分單元200及600。Units 200 and 600 include a plurality of program units (200: 210, 220, 230, 240, 250, 260) that execute unit programs and a plurality of shock absorbers (600: 610, 620) interposed between program units 200. The shock absorber 600 provides a temporary space in which the substrate G temporarily stays before entering the next program. Also, one end of each program unit 200 is connected to the first mask housing unit 310 that supplies the first deposition mask M1 to the first program line PL1. Also, the other end of each program unit 200 is connected to the second mask housing unit 320 that supplies the second deposition mask M2 to the second program line PL2. The first mask housing unit 310 and the second mask housing unit 320 respectively store deposition masks M1 and M2 used in film deposition, or store additional deposition masks instead of deposition masks M1 and M2. However, the first mask housing unit 310 and the second mask housing unit 320 may be a single common mask housing unit to which each program unit 200 is connected. Further, a feeder that supplies material to the deposition source 540 can be connected to the partial units 200 and 600.

單元200用於在基板G上執行一系列元件程序。例如,本具體實施例用於在事先形成正電洞的基板G上,相繼堆疊電洞注入層(HIL)、電洞傳輸層(HTL)、發射材料層(EML)、電子傳輸層(ETL)、電子注入層(EIL)、及負電極,以此方式形成有機發光二極體(OLED)。為此,HIL形成單元210、HTL形成單元220、EML形成單元230、ETL形成單元240、EIL形成單元250及負電極形成單元260連接成一列。EML形成單元230可另外包括顯示自然色彩的藍色-EML形成單元231、綠色-EML形成單元232及、紅色-EML形成單元233,及負電極形成單元260可另外包括以多層結構形成負電極的複數個負電極形成單元261、262及263。Unit 200 is used to execute a series of component programs on substrate G. For example, the present embodiment is for sequentially stacking a hole injection layer (HIL), a hole transport layer (HTL), an emission material layer (EML), and an electron transport layer (ETL) on a substrate G on which a positive hole is formed in advance. An electron injecting layer (OLED) is formed in this manner by an electron injecting layer (EIL) and a negative electrode. To this end, the HIL forming unit 210, the HTL forming unit 220, the EML forming unit 230, the ETL forming unit 240, the EIL forming unit 250, and the negative electrode forming unit 260 are connected in a row. The EML forming unit 230 may additionally include a blue-EML forming unit 231 that displays natural colors, a green-EML forming unit 232, and a red-EML forming unit 233, and the negative electrode forming unit 260 may additionally include a negative electrode formed in a multilayer structure. A plurality of negative electrode forming units 261, 262, and 263.

薄膜沉積系統中所含具有上述結構之複數個元件的至少一個可以是薄膜沉積裝置200,以下將參考圖2詳細說明薄膜沉積裝置200的結構。At least one of the plurality of elements having the above structure contained in the thin film deposition system may be the thin film deposition apparatus 200, and the structure of the thin film deposition apparatus 200 will be described in detail below with reference to FIG.

圖2為圖解圖1薄膜沉積系統中所含薄膜沉積裝置200的平面圖。2 is a plan view illustrating a thin film deposition apparatus 200 included in the thin film deposition system of FIG. 1.

參考圖2,薄膜沉積裝置200包括腔室100、第一基板夾520及第二基板夾530、沉積源540、及固定單元10(見圖3)。Referring to FIG. 2, the thin film deposition apparatus 200 includes a chamber 100, a first substrate holder 520 and a second substrate holder 530, a deposition source 540, and a fixing unit 10 (see FIG. 3).

腔室100可具有六面體形狀。腔室100在其中包括處理基板G1及G2的反應空間。腔室100包括第一基板入口511a、第一基板夾520及第一基板出口512a,其等沿著第一程序線對準。還有,腔室100包括第二基板入口511b、第二基板夾530及第二基板出口512b,其等亦沿著第二程序線對準。第一基板入口511a及第二基板入口511b形成於腔室100之壁中且彼此隔開。第一基板出口512a及第二基板出口512b形成於腔室100之另一壁(在其中形成第一基板入口511a及第二基板入口511b的腔室壁對面)中,及第一基板出口512a及第二基板出口512b亦彼此隔開。第一基板入口511a及第二基板入口511b,及第一基板出口512a及第二基板出口512b可為狹縫閥。The chamber 100 may have a hexahedral shape. The chamber 100 includes therein a reaction space for processing the substrates G1 and G2. The chamber 100 includes a first substrate inlet 511a, a first substrate holder 520, and a first substrate outlet 512a that are aligned along a first program line. Also, the chamber 100 includes a second substrate inlet 511b, a second substrate holder 530, and a second substrate outlet 512b that are also aligned along the second program line. The first substrate inlet 511a and the second substrate inlet 511b are formed in the wall of the chamber 100 and spaced apart from each other. The first substrate outlet 512a and the second substrate outlet 512b are formed in the other wall of the chamber 100 (opposite the chamber wall in which the first substrate inlet 511a and the second substrate inlet 511b are formed), and the first substrate outlet 512a and The second substrate outlets 512b are also spaced apart from each other. The first substrate inlet 511a and the second substrate inlet 511b, and the first substrate outlet 512a and the second substrate outlet 512b may be slit valves.

第一基板夾520及第二基板夾530分別包括支撐基板G1或G2之後側的支撐板521、附著於支撐板521以固定基板G1或G2的夾器522、及使支撐板521垂直站立或水平放置的驅動單元(未顯示)。不同於本具體實施例,如果基板G1及G2以其垂直站立狀態放入個別程序單元210、220、230、240、250及260,則不需要驅動單元。The first substrate holder 520 and the second substrate holder 530 respectively include a support plate 521 on the rear side of the support substrate G1 or G2, a clipper 522 attached to the support plate 521 to fix the substrate G1 or G2, and the support plate 521 standing vertically or horizontally Placed drive unit (not shown). Unlike the present embodiment, if the substrates G1 and G2 are placed in the vertical standing state into the individual program units 210, 220, 230, 240, 250, and 260, the driving unit is not required.

溫度控制單元523可提供於支撐板521內部或下方,使裝在支撐板521上的基板G1或G2維持在適合處理的溫度。溫度控制單元523可以是冷卻基板G1或G2的冷卻單元、加熱基板G1或G2的加熱單元、或其組合。本具體實施例藉由使用冷卻單元,使基板G1及G2維持在程序溫度,提高在基板G1及G2與沉積於基板G1及G2上表面的沉積材料之間的反應性。The temperature control unit 523 can be provided inside or below the support plate 521 to maintain the substrate G1 or G2 mounted on the support plate 521 at a temperature suitable for processing. The temperature control unit 523 may be a cooling unit that cools the substrate G1 or G2, a heating unit that heats the substrate G1 or G2, or a combination thereof. In the present embodiment, by using the cooling unit, the substrates G1 and G2 are maintained at the program temperature, and the reactivity between the substrates G1 and G2 and the deposition materials deposited on the upper surfaces of the substrates G1 and G2 is improved.

夾器522夾住基板G1及G2的邊緣,在水平裝在支撐板521上的基板G1及G2垂直站立時,防止基板G1及G2移動。在本具體實施例中,分別具有預定沉積圖案的沉積遮罩M1及M2分別形成於基板G1及G2上,以在基板G1及G2上形成薄膜圖案。因此,夾器522可用於將所有基板G1及G2以及沉積遮罩M1及M2牢牢固定在支撐板521上。The clip 522 sandwiches the edges of the substrates G1 and G2, and prevents the substrates G1 and G2 from moving when the substrates G1 and G2 horizontally mounted on the support plate 521 stand vertically. In the present embodiment, deposition masks M1 and M2 each having a predetermined deposition pattern are formed on the substrates G1 and G2, respectively, to form a thin film pattern on the substrates G1 and G2. Therefore, the clip 522 can be used to firmly fix all of the substrates G1 and G2 and the deposition masks M1 and M2 on the support plate 521.

第一基板夾520及第二基板夾530用於分別容納基板G1及G2於其中。還有,第一基板夾520及第二基板夾530在相同垂直面上彼此隔開預定距離,致使當第一基板夾520及第二基板夾530中任一個旋轉至其水平或垂直位置時,其不會接觸也不會影響另一個基板。The first substrate holder 520 and the second substrate holder 530 are used to accommodate the substrates G1 and G2 therein, respectively. Also, the first substrate holder 520 and the second substrate holder 530 are spaced apart from each other by a predetermined distance on the same vertical plane, such that when either of the first substrate holder 520 and the second substrate holder 530 is rotated to its horizontal or vertical position, It does not touch or affect another substrate.

沉積源540配置在第一基板夾520及第二基板夾530之間。詳細地說,沉積源540定位面對旋轉至垂直位置以進行沉積程序之基板G1及G2中的一個,及沉積源540用以供應蒸發材料朝向基板G1或G2的面對表面(也就是說,沉積表面)。沉積源540具有儲存材料的腔室、蒸發材料的加熱單元、及分配蒸發材料的分配器,其等未在圖中顯示。沉積源540可以是點型、線型或平面型。在本具體實施例中,沉積源540屬於點型,其中複數個點型沉積源541及542配置成一列。點型沉積源540藉由使驅動單元往返運動,在左右方向中移動及返回,以將材料均勻分配到基板G1或G2的表面上。分配材料至基板G1或G2上的程序在基板G1或G2垂直站立時執行。為維持基板G1及G2在垂直位置中,第一基板夾520及第二基板夾530支撐基板G1及G2成為垂直於地面。The deposition source 540 is disposed between the first substrate holder 520 and the second substrate holder 530. In detail, the deposition source 540 is positioned to face one of the substrates G1 and G2 that are rotated to the vertical position for the deposition process, and the deposition source 540 is used to supply the evaporation material toward the facing surface of the substrate G1 or G2 (that is, Deposition surface). The deposition source 540 has a chamber for storing material, a heating unit for evaporating material, and a dispenser for dispensing evaporation material, which are not shown in the drawings. The deposition source 540 can be a dot type, a line type, or a planar type. In the present embodiment, the deposition source 540 is of a dot type in which a plurality of dot deposition sources 541 and 542 are arranged in a column. The dot type deposition source 540 is moved and returned in the left and right direction by reciprocating the driving unit to evenly distribute the material onto the surface of the substrate G1 or G2. The procedure of dispensing material onto the substrate G1 or G2 is performed while the substrate G1 or G2 is standing vertically. In order to maintain the substrates G1 and G2 in the vertical position, the first substrate holder 520 and the second substrate holder 530 support the substrates G1 and G2 to be perpendicular to the ground.

明確地說,沉積源540用於對著第一基板夾520旋轉其分配方向達180°,以分配材料至第二基板夾530,或以相反方向旋轉達180°,以分配材料至第一基板夾520。據此,可針對安裝在單一裝置中的兩條程序線,使用單一沉積源540。In particular, the deposition source 540 is used to rotate the first substrate holder 520 by 180° in its dispensing direction to dispense material to the second substrate holder 530, or to rotate in the opposite direction by 180° to dispense material to the first substrate. Clip 520. Accordingly, a single deposition source 540 can be used for two program lines installed in a single device.

現在,下文將參考圖1,大致說明由具有上述結構之薄膜沉積系統所執行的薄膜沉積程序。Now, referring to Fig. 1, a film deposition process performed by the thin film deposition system having the above structure will be roughly explained.

首先,在大氣壓下,將已透過預處理形成正電極的基板G放入載入單元110,然後載入單元110變成真空條件。接著,將基板G相繼放入程序單元210、220、230、240、250及260,沿著交替選擇的第一及第二程序線,執行一系列單元程序。換句話說,在真空條件下,將基板G相繼放入HIL形成單元210、HTL形成單元220、藍色-EML形成單元231、綠色-EML形成單元232及紅色-EML形成單元233。據此,在各基板G的正電極上相繼形成HIL、HTL及EML。接下來,將基板G相繼放入ETL形成單元240、EIL形成單元250及負電極形成單元261、262及263。結果,在各基板G的EML上形成ETL、EIL及複數個負電極,以此方式形成OLED。之後,將所得基板G輸送至卸載單元120,然後在大氣壓下,釋出外部。First, the substrate G which has been subjected to pretreatment to form a positive electrode is placed in the loading unit 110 under atmospheric pressure, and then the loading unit 110 becomes a vacuum condition. Next, the substrate G is successively placed into the program units 210, 220, 230, 240, 250, and 260, and a series of unit programs are executed along the alternately selected first and second program lines. In other words, the substrate G is successively placed in the HIL forming unit 210, the HTL forming unit 220, the blue-EML forming unit 231, the green-EML forming unit 232, and the red-EML forming unit 233 under vacuum conditions. Accordingly, HIL, HTL, and EML are successively formed on the positive electrode of each substrate G. Next, the substrate G is successively placed in the ETL forming unit 240, the EIL forming unit 250, and the negative electrode forming units 261, 262, and 263. As a result, an ETL, an EIL, and a plurality of negative electrodes are formed on the EML of each substrate G, and an OLED is formed in this manner. Thereafter, the obtained substrate G is transported to the unloading unit 120, and then released to the outside under atmospheric pressure.

同時,參考圖3及4,薄膜沉積裝置可包括固定單元10。當容納基板G的第一基板夾520及第二基板夾530被輸送至腔室中時,第一基板夾520及第二基板夾530由固定單元10卡在腔室中的指定位置,並固定在指定位置持續預定時間週期。指定位置是第一基板夾520及第二基板夾530中容納的基板G與遮罩精確對準的位置。據此,可以根據廠商設計,在各基板上形成正確的薄膜圖案。Meanwhile, referring to FIGS. 3 and 4, the thin film deposition apparatus may include the fixing unit 10. When the first substrate holder 520 and the second substrate holder 530 accommodating the substrate G are transported into the chamber, the first substrate holder 520 and the second substrate holder 530 are caught by the fixing unit 10 at a specified position in the chamber, and are fixed. The specified time period continues for the specified time period. The designated position is a position at which the substrate G accommodated in the first substrate holder 520 and the second substrate holder 530 is precisely aligned with the mask. Accordingly, a correct film pattern can be formed on each substrate according to the manufacturer's design.

可由影像拾取元件在光學上執行基板及遮罩之間的精確對準,影像拾取元件諸如電荷耦合元件(CCD)、互補金氧半導體(CMOS)等。在上述的本具體實施例中,由於容納基板G的第一基板夾520及第二基板夾530由固定單元10穩定固定於指定位置,因而達成基板G及遮罩間的穩定對準。Accurate alignment between the substrate and the mask can be optically performed by an image pickup element such as a charge coupled device (CCD), a complementary metal oxide semiconductor (CMOS), or the like. In the above-described embodiment, since the first substrate holder 520 and the second substrate holder 530 accommodating the substrate G are stably fixed to the designated position by the fixing unit 10, stable alignment between the substrate G and the mask is achieved.

同時,固定單元10可包括固定部件11及升降部件12。固定部件11卡住升降部件12,使升降部件12透過固定部件11插入第一基板夾520及第二基板夾530的底部。當第一基板夾520及第二基板夾530固定於指定位置時,升降部件12的至少一部分形成插入於固定部件11。升降部件12可包括液壓缸。或者,升降部件12可包括線性馬達。Meanwhile, the fixing unit 10 may include a fixing member 11 and a lifting member 12. The fixing member 11 catches the lifting member 12, and the lifting member 12 is inserted through the fixing member 11 into the bottom portions of the first substrate holder 520 and the second substrate holder 530. When the first substrate holder 520 and the second substrate holder 530 are fixed at the designated position, at least a part of the lifting member 12 is formed to be inserted into the fixing member 11. The lifting member 12 can include a hydraulic cylinder. Alternatively, the lifting member 12 can include a linear motor.

固定部件11可以圓錐形形狀形成。升降部件12的尖端亦可以圓錐形形狀形成,以便容納於固定部件11中。或者,固定部件11可以圓柱形形狀形成,在此例中,升降部件12的尖端可以半球形狀形成,以便可輕易地插入固定部件11或從中抽出。The fixing member 11 may be formed in a conical shape. The tip end of the lifting member 12 may also be formed in a conical shape so as to be received in the fixing member 11. Alternatively, the fixing member 11 may be formed in a cylindrical shape, and in this example, the tip end of the lifting member 12 may be formed in a hemispherical shape so as to be easily inserted into or withdrawn from the fixing member 11.

同時,參考圖5及6,薄膜沉積裝置可另外包括複數個行進控制單元20。行進控制單元20限制第一基板夾520及第二基板夾530在特定方向中行進。Meanwhile, referring to FIGS. 5 and 6, the thin film deposition apparatus may additionally include a plurality of travel control units 20. The travel control unit 20 limits the first substrate holder 520 and the second substrate holder 530 from traveling in a particular direction.

每個行進控制單元20可包括導引部件21及驅動部件22。導引部件(各為21)定位鄰接第一基板夾520及第二基板夾530之每一個的兩側,以導引第一基板夾520及第二基板夾530的行進。驅動部件22造成導引部件21移動接近或遠離第一基板夾520及第二基板夾530。每個驅動部件22可以是線性馬達。或者,驅動部件22可以是液壓缸。Each of the travel control units 20 may include a guiding member 21 and a driving member 22. The guiding members (each 21) are positioned adjacent to both sides of each of the first substrate holder 520 and the second substrate holder 530 to guide the advancement of the first substrate holder 520 and the second substrate holder 530. The driving member 22 causes the guiding member 21 to move closer to or away from the first substrate holder 520 and the second substrate holder 530. Each drive component 22 can be a linear motor. Alternatively, the drive component 22 can be a hydraulic cylinder.

導引部件21可以是複數個滾輪,沿著第一基板夾520及第二基板夾530之每一個的兩側處的一個邊緣配置。當第一基板夾520及第二基板夾530被放入腔室,使沉積材料分配於基板上時,由驅動部件22移動滾輪靠近第一基板夾520及第二基板夾530。可適當設定滾輪間的間隔最大值,以防止第一基板夾520及第二基板夾530過度傾斜而與滾輪脫離。將滾輪間的間隔最小值設定為稍窄於第一基板夾520及第二基板夾530的每一個的厚度。The guiding member 21 may be a plurality of rollers disposed along one edge of each of the first substrate holder 520 and the second substrate holder 530. When the first substrate holder 520 and the second substrate holder 530 are placed in the chamber to distribute the deposition material on the substrate, the driving member 22 moves the roller closer to the first substrate holder 520 and the second substrate holder 530. The maximum interval between the rollers can be appropriately set to prevent the first substrate holder 520 and the second substrate holder 530 from being excessively inclined to be separated from the roller. The minimum interval between the rollers is set to be slightly narrower than the thickness of each of the first substrate holder 520 and the second substrate holder 530.

透過該複數個滾輪移動第一基板夾520及第二基板夾530,可使第一基板夾520及第二基板夾530穩定移動。還有,該複數個滾輪用以在將沉積材料沉積於基板G上時,穩定夾持第一基板夾520及第二基板夾530,藉此提供抵擋鄰接組件震動的抵抗性。因此,可提高將沉積材料沉積於基板上的可靠性。The first substrate holder 520 and the second substrate holder 530 are stably moved by moving the first substrate holder 520 and the second substrate holder 530 through the plurality of rollers. Moreover, the plurality of rollers are used to stably hold the first substrate holder 520 and the second substrate holder 530 when the deposition material is deposited on the substrate G, thereby providing resistance against vibration of the adjacent components. Therefore, the reliability of depositing the deposited material on the substrate can be improved.

此外,由於在基板G與遮罩對準時,由行進控制單元20夾持第一基板夾520及第二基板夾530的上方部分,可達成穩定對準。Further, since the upper portion of the first substrate holder 520 and the second substrate holder 530 is sandwiched by the travel control unit 20 when the substrate G is aligned with the mask, stable alignment can be achieved.

同時,輸送滾輪30可提供於第一基板夾520及第二基板夾530的底部下方。輸送滾輪30配置在各腔室(未顯示)中。輸送滾輪30用以在一個方向中移動第一基板夾520及第二基板夾530。然而,也可以使用輸送帶取代輸送滾輪30,配置在第一基板夾520及第二基板夾530的底部下方。At the same time, the conveying roller 30 can be provided under the bottom of the first substrate holder 520 and the second substrate holder 530. The conveying roller 30 is disposed in each chamber (not shown). The conveying roller 30 is used to move the first substrate holder 520 and the second substrate holder 530 in one direction. However, it is also possible to use a conveyor belt instead of the transport roller 30, and disposed below the bottom of the first substrate holder 520 and the second substrate holder 530.

同時,在薄膜沉積程序中,以垂直於地面的垂直站立位置輸送各基板G。然而,亦可以平行於地面的水平位置輸送各基板G。在以平行於地面的水平位置輸送基板G時,需要在個別程序單元210、220、230、240、250及260中使水平基板G站立的程序。以下將參考圖7至12詳細說明此程序。圖7至12為解釋根據一具體實施例之薄膜沉積系統之單元程序的平面圖。At the same time, in the film deposition process, each substrate G is conveyed in a vertical standing position perpendicular to the ground. However, it is also possible to transport each substrate G parallel to the horizontal position of the ground. When the substrate G is transported at a horizontal position parallel to the ground, a program for standing the horizontal substrate G in the individual program units 210, 220, 230, 240, 250, and 260 is required. This procedure will be described in detail below with reference to Figs. 7 through 12 are plan views illustrating a unit procedure of a thin film deposition system in accordance with an embodiment.

如圖7所示,透過第一基板入口511a,將從第一程序線以其水平位置輸送的第一基板G1放入程序單元200,然後將第一基板G1裝在水平放置之第一基板夾520的支撐板上。接下來,從連接至程序單元200的第一遮罩容納單元310提供第一沉積遮罩M1,及將第一沉積遮罩M1放在第一基板G1上(見圖8)。然後,如圖8所示,第一基板夾520的夾器522夾住基板G1及第一沉積遮罩M1,然後將第一基板夾520旋轉90°,變成垂直狀態。據此,第一基板G1的表面面對沉積源540的分配方向。沉積源540朝向第一基板G1的表面分配蒸發材料時,執行在第一基板G1上沉積薄膜的第一薄膜沉積程序。As shown in FIG. 7, the first substrate G1 transported from the first program line in its horizontal position is placed in the program unit 200 through the first substrate inlet 511a, and then the first substrate G1 is mounted on the horizontally placed first substrate holder. 520's support plate. Next, the first deposition mask M1 is supplied from the first mask housing unit 310 connected to the program unit 200, and the first deposition mask M1 is placed on the first substrate G1 (see FIG. 8). Then, as shown in FIG. 8, the clip 522 of the first substrate holder 520 sandwiches the substrate G1 and the first deposition mask M1, and then rotates the first substrate holder 520 by 90° to become a vertical state. According to this, the surface of the first substrate G1 faces the distribution direction of the deposition source 540. When the deposition source 540 distributes the evaporation material toward the surface of the first substrate G1, a first thin film deposition process of depositing a thin film on the first substrate G1 is performed.

如圖9所示,在將第一基板G1放入程序單元200時或之後,透過第二基板入口511b,將從第二程序線以其水平位置輸送的第二基板G2放入程序單元200。第二基板G2裝在水平放置之第二基板夾530的支撐板上,及從連接至程序單元200的第二遮罩容納單元320,供應第二沉積遮罩M2(見圖10,然後將其配置及配置在第二基板G2上。接下來,如圖10所示,在第二基板夾530的夾器512夾住第二基板G2及第二沉積遮罩M2時,將第二基板夾530旋轉90°,變成垂直狀態。此處,配置/配置第二基板G2及第二沉積遮罩M2的程序在第一薄膜沉積程序期間執行,以將前置時間降到最低並提高生產率。As shown in FIG. 9, when the first substrate G1 is placed in the program unit 200 or later, the second substrate G2 transported from the second program line at its horizontal position is placed in the program unit 200 through the second substrate inlet 511b. The second substrate G2 is mounted on the support plate of the horizontally placed second substrate holder 530, and from the second mask housing unit 320 connected to the program unit 200, supplies the second deposition mask M2 (see FIG. 10, and then The second substrate G52 is disposed and arranged on the second substrate G2. Next, as shown in FIG. 10, when the second substrate G2 and the second deposition mask M2 are sandwiched by the clip 512 of the second substrate holder 530, the second substrate holder 530 is disposed. The rotation is changed to 90° to become a vertical state. Here, the procedure of configuring/configuring the second substrate G2 and the second deposition mask M2 is performed during the first thin film deposition process to minimize the lead time and improve productivity.

接下來,如圖11所示,在第一薄膜沉積程序終止後,將沉積源540的分配方向對著第一基板夾520旋轉180°。據此,沉積源540的分配方向面對第二基板G2的表面,及在沉積源540將蒸發材料分配到第二基板G2的表面上時,執行在第二基板G2上沉積薄膜的第二薄膜沉積程序。同時,如圖12所示,在執行第二薄膜沉積程序時,第一基板夾520返回其水平狀態,且第一沉積遮罩M1與第一基板G1分離。之後,第一基板G1透過第一基板出口512a釋出,然後放入下一個單元程序。同時,在第一及第二薄膜沉積程序後,與第一基板G1及第二基板G2分離的第一沉積遮罩M1及第二沉積遮罩M2留在對應單元中,待後續沉積程序中使用,及第一沉積遮罩M1及第二沉積遮罩M2在因沾有灰塵、破損等而必須更換時,被輸送至第一遮罩容納單元310及第二遮罩容納單元320,然後取出。之後,透過清洗、修復等,再重新使用第一沉積遮罩M1及第二沉積遮罩M2。然而,第一遮罩容納單元310及第二遮罩容納單元320也可以含有取代已用過沉積遮罩的額外沉積遮罩。Next, as shown in FIG. 11, after the termination of the first thin film deposition process, the dispensing direction of the deposition source 540 is rotated by 180[deg.] against the first substrate holder 520. According to this, the distribution direction of the deposition source 540 faces the surface of the second substrate G2, and when the deposition source 540 distributes the evaporation material onto the surface of the second substrate G2, the second film on which the thin film is deposited on the second substrate G2 is performed. Deposition procedure. Meanwhile, as shown in FIG. 12, when the second thin film deposition process is performed, the first substrate holder 520 returns to its horizontal state, and the first deposition mask M1 is separated from the first substrate G1. Thereafter, the first substrate G1 is released through the first substrate outlet 512a and then placed in the next unit program. Meanwhile, after the first and second thin film deposition processes, the first deposition mask M1 and the second deposition mask M2 separated from the first substrate G1 and the second substrate G2 remain in the corresponding unit, and are used in a subsequent deposition process. And the first deposition mask M1 and the second deposition mask M2 are transported to the first mask housing unit 310 and the second mask housing unit 320 when they have to be replaced due to dust, breakage, etc., and then taken out. Thereafter, the first deposition mask M1 and the second deposition mask M2 are reused by cleaning, repairing, and the like. However, the first mask housing unit 310 and the second mask housing unit 320 may also contain an additional deposition mask that replaces the used deposition mask.

以此方式,由於根據上述具體實施例的薄膜沉積系統使得個別程序單元210、220、230、240、250及260中提供的單一沉積源540,能夠在個別程序單元210、220、230、240、250及260中安裝的複數個程序線PL1及PL2上,執行連續的薄膜沉積程序,可同時減少成本及提高生產率。此外,由於在另一程序線上的另一基板上執行薄膜沉積的同時,在一程序線上執行基板輸送及基板配置/遮罩相對於基板的配置,可減少前置時間,進而提高生產率。In this manner, the single deposition source 540 provided in the individual program units 210, 220, 230, 240, 250, and 260 can be in the individual program units 210, 220, 230, 240, due to the thin film deposition system in accordance with the above-described embodiments. Continuous film deposition procedures are performed on a plurality of program lines PL1 and PL2 installed in 250 and 260, which can simultaneously reduce cost and increase productivity. In addition, since the deposition of the substrate and the arrangement of the substrate arrangement/mask with respect to the substrate are performed on a program line while performing film deposition on another substrate on another program line, the lead time can be reduced, thereby improving productivity.

上文已經說明若干範例。但應明白,可進行各種修改。例如,如果以不同順序執行所述技術,及/或如果在所述系統、架構、元件、或電路中的部件以不同方式組合及/或為其他部件或其等效物取代或補充,仍可達成適當結果。據此,其他實施例均在以下申請專利範圍的範疇中。Several examples have been described above. However, it should be understood that various modifications can be made. For example, if the techniques are performed in a different order, and/or if the components in the system, architecture, components, or circuits are combined in different ways and/or replaced or supplemented with other components or equivalents thereof, Achieve the appropriate results. Accordingly, other embodiments are within the scope of the following claims.

10...固定單元10. . . Fixed unit

11...固定部件11. . . Fixed part

12...升降部件12. . . Lifting parts

20...行進控制單元20. . . Travel control unit

21...導引部件twenty one. . . Guide member

22...驅動部件twenty two. . . Drive unit

30...輸送滾輪30. . . Transport roller

100...腔室100. . . Chamber

110...載入單元110. . . Loading unit

120...卸載單元120. . . Unloading unit

200...薄膜沉積裝置200. . . Thin film deposition device

210...HIL形成單元210. . . HIL forming unit

220...HTL形成單元220. . . HTL forming unit

230...EML形成單元230. . . EML forming unit

231...藍色-EML形成單元231. . . Blue-EML forming unit

232...綠色-EML形成單元232. . . Green-EML forming unit

233...紅色-EML形成單元233. . . Red-EML forming unit

240...ETL形成單元240. . . ETL forming unit

250...EIL形成單元250. . . EIL forming unit

260、261、262、263...負電極形成單元260, 261, 262, 263. . . Negative electrode forming unit

200:210、220、230、240、250、260...程序單元200:210, 220, 230, 240, 250, 260. . . Program unit

310...第一遮罩容納單元310. . . First mask housing unit

320...第二遮罩容納單元320. . . Second mask housing unit

511a...第一基板入口511a. . . First substrate inlet

511b...第二基板入口511b. . . Second substrate inlet

512a...第一基板出口512a. . . First substrate exit

512b...第二基板出口512b. . . Second substrate exit

520...第一基板夾520. . . First substrate holder

521...支撐板521. . . Support plate

522...夾器522. . . Clamp

523...溫度控制單元523. . . Temperature control unit

530...第二基板夾530. . . Second substrate holder

540、541、542...沉積源540, 541, 542. . . Sedimentary source

600:610、620...吸震器600:610, 620. . . Shock absorber

G、G1、G2...基板G, G1, G2. . . Substrate

M1...第一沉積遮罩M1. . . First deposition mask

M2...第二沉積遮罩M2. . . Second deposition mask

PL1、PL2...程序線PL1, PL2. . . Program line

包括附圖以進一步明瞭本發明,附圖併入本說明書且構成本說明書的一部分,以解說本發明的具體實施例,並連同「實施方式」用以解釋本發明的原理。The invention is further described in the accompanying drawings.

圖1為圖解根據一具體實施例之薄膜沉積系統的平面圖。1 is a plan view illustrating a thin film deposition system in accordance with an embodiment.

圖2為圖解圖1薄膜沉積系統中所含薄膜沉積裝置的平面圖。Figure 2 is a plan view showing a thin film deposition apparatus included in the thin film deposition system of Figure 1.

圖3為解釋其中第一或第二基板夾按一方向在圖1薄膜沉積系統中所含薄膜沉積裝置中行進之程序的圖式。Fig. 3 is a view for explaining a procedure in which the first or second substrate holder travels in one direction in the thin film deposition apparatus included in the thin film deposition system of Fig. 1.

圖4圖解第一或第二基板夾在由圖3所示薄膜沉積裝置中固定單元固定時的狀態。Fig. 4 illustrates a state in which the first or second substrate is sandwiched by a fixing unit in the thin film deposition apparatus shown in Fig. 3.

圖5圖解由圖3所示薄膜沉積裝置中行進控制單元引導第一或第二基板夾行進時的狀態。Figure 5 illustrates a state in which the first or second substrate holder is guided by the travel control unit in the thin film deposition apparatus shown in Figure 3.

圖6為解釋其中行進控制單元在圖3所示薄膜沉積裝置中操作之程序的圖式。Fig. 6 is a view for explaining a procedure in which the travel control unit operates in the thin film deposition apparatus shown in Fig. 3.

圖7至12為解釋根據一具體實施例之薄膜沉積系統之單元程序的平面圖。7 through 12 are plan views illustrating a unit procedure of a thin film deposition system in accordance with an embodiment.

200...薄膜沉積裝置200. . . Thin film deposition device

310...第一遮罩容納單元310. . . First mask housing unit

320...第二遮罩容納單元320. . . Second mask housing unit

511a...第一基板入口511a. . . First substrate inlet

511b...第二基板入口511b. . . Second substrate inlet

512a...第一基板出口512a. . . First substrate exit

512b...第二基板出口512b. . . Second substrate exit

520...第一基板夾520. . . First substrate holder

521...支撐板521. . . Support plate

522...夾器522. . . Clamp

523...溫度控制單元523. . . Temperature control unit

530...第二基板夾530. . . Second substrate holder

540、541、542...沉積源540, 541, 542. . . Sedimentary source

G1、G2...基板G1, G2. . . Substrate

M1...第一沉積遮罩M1. . . First deposition mask

M2...第二沉積遮罩M2. . . Second deposition mask

Claims (9)

一種薄膜沉積裝置,包含:一腔室,其中形成一反應空間;第一及第二基板夾,用於容納基板於其中且彼此隔開;一沉積源,配置於該等第一及第二基板夾之間,以供應一沉積材料至該等基板,其中該等第一及第二基板夾支撐該等基板成為垂直於地面;及一固定單元,在該等基板分別容納於該等第一及第二基板夾時,使該等第一及第二基板夾固定於該腔室中的一指定位置持續一預定時間,其中該固定單元包含:一固定部件,用於允許從該等第一及第二基板夾的底部向上插入;及一升降部件,在該等第一及第二基板夾固定於特定位置時,其至少一部分插入該固定部件或從中抽出。 A thin film deposition apparatus comprising: a chamber in which a reaction space is formed; first and second substrate holders for accommodating substrates therein and spaced apart from each other; and a deposition source disposed on the first and second substrates Between the clips, to supply a deposition material to the substrates, wherein the first and second substrate holders support the substrates to be perpendicular to the ground; and a fixing unit, wherein the substrates are respectively accommodated in the first and When the second substrate is clamped, the first and second substrate holders are fixed to a designated position in the chamber for a predetermined time, wherein the fixing unit comprises: a fixing component for allowing the first and the first The bottom of the second substrate holder is inserted upward; and a lifting member is inserted into or withdrawn from at least a portion of the first and second substrate holders when fixed to a specific position. 如申請專利範圍第1項所述之薄膜沉積裝置,另外包含一行進控制單元,限制該等第一及第二基板夾在一方向中行進。 The thin film deposition apparatus of claim 1, further comprising a travel control unit that restricts the first and second substrate holders from traveling in one direction. 如申請專利範圍第2項所述之薄膜沉積裝置,其中該行進控制單元包含:一導引部件,定位鄰接該等第一及第二基板夾之每一個的兩側,導引該等第一及第二基板夾的移動;及一驅動部件,造成該導引部件移動接近或遠離該等第一及第二基板夾。 The film deposition apparatus of claim 2, wherein the travel control unit comprises: a guiding member positioned adjacent to each side of each of the first and second substrate holders to guide the first And moving the second substrate holder; and a driving component causing the guiding member to move closer to or away from the first and second substrate holders. 如申請專利範圍第3項所述之薄膜沉積裝置,其中該導引部件為複數個滾輪,配置在該等第一及第二基板夾之每一個的 兩側。 The thin film deposition apparatus of claim 3, wherein the guiding member is a plurality of rollers disposed in each of the first and second substrate holders. On both sides. 如申請專利範圍第1項所述之薄膜沉積裝置,其中該等第一及第二基板夾的每一個包含:一支撐板,將一基板裝在其上並固定該基板;及一夾器,固定裝在該支撐板上的該基板。 The thin film deposition apparatus of claim 1, wherein each of the first and second substrate holders comprises: a support plate on which a substrate is mounted and the substrate is fixed; and a clipper, The substrate mounted on the support plate is fixed. 如申請專利範圍第5項所述之薄膜沉積裝置,其中該等第一及第二基板夾的每一個另外包含一驅動單元,使該支撐板垂直站立或使該支撐板水平放置。 The thin film deposition apparatus of claim 5, wherein each of the first and second substrate holders further comprises a driving unit such that the support plate stands vertically or the support plate is placed horizontally. 如申請專利範圍第1項所述之薄膜沉積裝置,其中該沉積源可在該等第一及第二基板夾之間旋轉。 The thin film deposition apparatus of claim 1, wherein the deposition source is rotatable between the first and second substrate holders. 如申請專利範圍第1項所述之薄膜沉積裝置,其中該沉積源係一點型、一線型及一平面型中的一個。 The thin film deposition apparatus of claim 1, wherein the deposition source is one of a one-point type, a one-line type, and a flat type. 如申請專利範圍第1項所述之薄膜沉積裝置,其中該腔室連接至一遮罩腔室,用於分別將沉積遮罩供應至該等第一及第二基板夾,或用於以新的沉積遮罩取代沉積遮罩。The thin film deposition apparatus of claim 1, wherein the chamber is connected to a mask chamber for respectively supplying a deposition mask to the first and second substrate holders, or for The deposition mask replaces the deposition mask.
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TW201408133A (en) * 2008-09-04 2014-02-16 Hitachi High Tech Corp Manufacturing device of organic el device and method of manufacturing organic el device and layer forming device and layer forming method

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CN103097568A (en) 2013-05-08
WO2011155652A1 (en) 2011-12-15

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