TWI438832B - 摻雜鋁之金屬碳氮化物閘極電極的形成方法 - Google Patents

摻雜鋁之金屬碳氮化物閘極電極的形成方法 Download PDF

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Publication number
TWI438832B
TWI438832B TW098128486A TW98128486A TWI438832B TW I438832 B TWI438832 B TW I438832B TW 098128486 A TW098128486 A TW 098128486A TW 98128486 A TW98128486 A TW 98128486A TW I438832 B TWI438832 B TW I438832B
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TW
Taiwan
Prior art keywords
precursor
aluminum
metal carbonitride
carbonitride
forming
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TW098128486A
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English (en)
Chinese (zh)
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TW201021099A (en
Inventor
長谷川敏夫
葛雷特Ｊ 盧森克
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東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/669—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the conductor further comprising additional layers of alloy material, compound material or organic material, e.g. TaN/TiAlN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW098128486A 2008-08-25 2009-08-25 摻雜鋁之金屬碳氮化物閘極電極的形成方法 TWI438832B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/197,756 US7985680B2 (en) 2008-08-25 2008-08-25 Method of forming aluminum-doped metal carbonitride gate electrodes

Publications (2)

Publication Number Publication Date
TW201021099A TW201021099A (en) 2010-06-01
TWI438832B true TWI438832B (zh) 2014-05-21

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TW098128486A TWI438832B (zh) 2008-08-25 2009-08-25 摻雜鋁之金屬碳氮化物閘極電極的形成方法

Country Status (7)

Country Link
US (1) US7985680B2 (https=)
JP (1) JP5529134B2 (https=)
KR (1) KR101503969B1 (https=)
CN (1) CN102132389B (https=)
DE (1) DE112009002118B4 (https=)
TW (1) TWI438832B (https=)
WO (1) WO2010027715A1 (https=)

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Also Published As

Publication number Publication date
JP5529134B2 (ja) 2014-06-25
DE112009002118T5 (de) 2011-07-28
CN102132389B (zh) 2013-07-10
US7985680B2 (en) 2011-07-26
DE112009002118B4 (de) 2013-03-07
KR20110069015A (ko) 2011-06-22
WO2010027715A1 (en) 2010-03-11
TW201021099A (en) 2010-06-01
US20100048009A1 (en) 2010-02-25
CN102132389A (zh) 2011-07-20
JP2012501093A (ja) 2012-01-12
KR101503969B1 (ko) 2015-03-24

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