JP5529134B2 - アルミニウムがドープされた金属炭窒化物ゲート電極の作製方法 - Google Patents

アルミニウムがドープされた金属炭窒化物ゲート電極の作製方法 Download PDF

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JP5529134B2
JP5529134B2 JP2011525115A JP2011525115A JP5529134B2 JP 5529134 B2 JP5529134 B2 JP 5529134B2 JP 2011525115 A JP2011525115 A JP 2011525115A JP 2011525115 A JP2011525115 A JP 2011525115A JP 5529134 B2 JP5529134 B2 JP 5529134B2
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precursor
aluminum
metal carbonitride
substrate
carbonitride
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JP2012501093A5 (https=
JP2012501093A (ja
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敏夫 長谷川
ジェイ ルーシンク，ヘリット
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/669—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the conductor further comprising additional layers of alloy material, compound material or organic material, e.g. TaN/TiAlN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

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  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2011525115A 2008-08-25 2009-08-22 アルミニウムがドープされた金属炭窒化物ゲート電極の作製方法 Expired - Fee Related JP5529134B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/197,756 US7985680B2 (en) 2008-08-25 2008-08-25 Method of forming aluminum-doped metal carbonitride gate electrodes
US12/197,756 2008-08-25
PCT/US2009/054707 WO2010027715A1 (en) 2008-08-25 2009-08-22 Method for forming aluminum-doped metal carbonitride gate electrodes

Publications (3)

Publication Number Publication Date
JP2012501093A JP2012501093A (ja) 2012-01-12
JP2012501093A5 JP2012501093A5 (https=) 2012-06-21
JP5529134B2 true JP5529134B2 (ja) 2014-06-25

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JP2011525115A Expired - Fee Related JP5529134B2 (ja) 2008-08-25 2009-08-22 アルミニウムがドープされた金属炭窒化物ゲート電極の作製方法

Country Status (7)

Country Link
US (1) US7985680B2 (https=)
JP (1) JP5529134B2 (https=)
KR (1) KR101503969B1 (https=)
CN (1) CN102132389B (https=)
DE (1) DE112009002118B4 (https=)
TW (1) TWI438832B (https=)
WO (1) WO2010027715A1 (https=)

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Also Published As

Publication number Publication date
DE112009002118T5 (de) 2011-07-28
CN102132389B (zh) 2013-07-10
US7985680B2 (en) 2011-07-26
DE112009002118B4 (de) 2013-03-07
KR20110069015A (ko) 2011-06-22
WO2010027715A1 (en) 2010-03-11
TW201021099A (en) 2010-06-01
US20100048009A1 (en) 2010-02-25
CN102132389A (zh) 2011-07-20
JP2012501093A (ja) 2012-01-12
KR101503969B1 (ko) 2015-03-24
TWI438832B (zh) 2014-05-21

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