TWI435401B - 具有整合均流板及改善之傳導性的下部內襯件 - Google Patents

具有整合均流板及改善之傳導性的下部內襯件 Download PDF

Info

Publication number
TWI435401B
TWI435401B TW102112934A TW102112934A TWI435401B TW I435401 B TWI435401 B TW I435401B TW 102112934 A TW102112934 A TW 102112934A TW 102112934 A TW102112934 A TW 102112934A TW I435401 B TWI435401 B TW I435401B
Authority
TW
Taiwan
Prior art keywords
chamber
liner
chamber liner
wall
annular
Prior art date
Application number
TW102112934A
Other languages
English (en)
Chinese (zh)
Other versions
TW201334104A (zh
Inventor
卡杜祺詹姆斯Ｄ
恩蓋葉安德魯
波拉克里斯那阿吉特
庫特尼麥可Ｃ
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201334104A publication Critical patent/TW201334104A/zh
Application granted granted Critical
Publication of TWI435401B publication Critical patent/TWI435401B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW102112934A 2008-04-07 2009-03-31 具有整合均流板及改善之傳導性的下部內襯件 TWI435401B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/099,007 US7987814B2 (en) 2008-04-07 2008-04-07 Lower liner with integrated flow equalizer and improved conductance

Publications (2)

Publication Number Publication Date
TW201334104A TW201334104A (zh) 2013-08-16
TWI435401B true TWI435401B (zh) 2014-04-21

Family

ID=41132169

Family Applications (4)

Application Number Title Priority Date Filing Date
TW102112934A TWI435401B (zh) 2008-04-07 2009-03-31 具有整合均流板及改善之傳導性的下部內襯件
TW101140382A TWI397144B (zh) 2008-04-07 2009-03-31 具有整合均流板及改善之傳導性的下部內襯件
TW098110720A TWI387035B (zh) 2008-04-07 2009-03-31 具有整合均流板及改善之傳導性的下部內襯件
TW101140384A TWI397145B (zh) 2008-04-07 2009-03-31 具有整合均流板及改善之傳導性的下部內襯件

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW101140382A TWI397144B (zh) 2008-04-07 2009-03-31 具有整合均流板及改善之傳導性的下部內襯件
TW098110720A TWI387035B (zh) 2008-04-07 2009-03-31 具有整合均流板及改善之傳導性的下部內襯件
TW101140384A TWI397145B (zh) 2008-04-07 2009-03-31 具有整合均流板及改善之傳導性的下部內襯件

Country Status (6)

Country Link
US (4) US7987814B2 (https=)
JP (1) JP5875864B2 (https=)
KR (4) KR20100135894A (https=)
CN (2) CN101990789B (https=)
TW (4) TWI435401B (https=)
WO (1) WO2009126576A2 (https=)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7987814B2 (en) * 2008-04-07 2011-08-02 Applied Materials, Inc. Lower liner with integrated flow equalizer and improved conductance
JP5102706B2 (ja) * 2008-06-23 2012-12-19 東京エレクトロン株式会社 バッフル板及び基板処理装置
JP5424744B2 (ja) * 2009-07-01 2014-02-26 株式会社フェローテック 分割環状リブ型プラズマ処理装置
US8398814B2 (en) * 2009-07-08 2013-03-19 Applied Materials, Inc. Tunable gas flow equalizer
US8617347B2 (en) * 2009-08-06 2013-12-31 Applied Materials, Inc. Vacuum processing chambers incorporating a moveable flow equalizer
US8840725B2 (en) * 2009-11-11 2014-09-23 Applied Materials, Inc. Chamber with uniform flow and plasma distribution
US20110207332A1 (en) * 2010-02-25 2011-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film coated process kits for semiconductor manufacturing tools
US20110226739A1 (en) * 2010-03-19 2011-09-22 Varian Semiconductor Equipment Associates, Inc. Process chamber liner with apertures for particle containment
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
TWI502617B (zh) 2010-07-21 2015-10-01 應用材料股份有限公司 用於調整電偏斜的方法、電漿處理裝置與襯管組件
WO2012128783A1 (en) * 2011-03-22 2012-09-27 Applied Materials, Inc. Liner assembly for chemical vapor deposition chamber
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
TWI638587B (zh) * 2011-10-05 2018-10-11 美商應用材料股份有限公司 對稱電漿處理腔室
JP6034156B2 (ja) * 2011-12-05 2016-11-30 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
USD699692S1 (en) * 2012-01-19 2014-02-18 Applied Materials, Inc. Upper liner
CN103377979B (zh) * 2012-04-30 2016-06-08 细美事有限公司 调节板和具有该调节板的用于处理基板的装置
US9928987B2 (en) 2012-07-20 2018-03-27 Applied Materials, Inc. Inductively coupled plasma source with symmetrical RF feed
US10249470B2 (en) 2012-07-20 2019-04-02 Applied Materials, Inc. Symmetrical inductively coupled plasma source with coaxial RF feed and coaxial shielding
US9082590B2 (en) 2012-07-20 2015-07-14 Applied Materials, Inc. Symmetrical inductively coupled plasma source with side RF feeds and RF distribution plates
US9745663B2 (en) * 2012-07-20 2017-08-29 Applied Materials, Inc. Symmetrical inductively coupled plasma source with symmetrical flow chamber
US10170279B2 (en) 2012-07-20 2019-01-01 Applied Materials, Inc. Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding
US9449794B2 (en) 2012-07-20 2016-09-20 Applied Materials, Inc. Symmetrical inductively coupled plasma source with side RF feeds and spiral coil antenna
CN107221487B (zh) 2013-03-15 2019-06-28 应用材料公司 具有高度对称四重式气体注入的等离子体反应器
WO2015023435A1 (en) * 2013-08-12 2015-02-19 Applied Materials, Inc. Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactors
US20150041062A1 (en) * 2013-08-12 2015-02-12 Lam Research Corporation Plasma processing chamber with removable body
USD717746S1 (en) * 2013-11-06 2014-11-18 Applied Materials, Inc. Lower chamber liner
USD716239S1 (en) * 2013-11-06 2014-10-28 Applied Materials, Inc. Upper chamber liner
USD716240S1 (en) * 2013-11-07 2014-10-28 Applied Materials, Inc. Lower chamber liner
KR101590902B1 (ko) * 2014-06-30 2016-02-11 세메스 주식회사 라이너 유닛 및 기판 처리 장치
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member
US11060203B2 (en) * 2014-09-05 2021-07-13 Applied Materials, Inc. Liner for epi chamber
JP6544902B2 (ja) * 2014-09-18 2019-07-17 東京エレクトロン株式会社 プラズマ処理装置
CN104630746A (zh) * 2015-01-27 2015-05-20 中国科学院微电子研究所 一种内衬、内衬构成的腔室及内衬表面的处理方法
US9963782B2 (en) * 2015-02-12 2018-05-08 Asm Ip Holding B.V. Semiconductor manufacturing apparatus
KR101792941B1 (ko) * 2015-04-30 2017-11-02 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드, 상하이 화학기상증착장치 및 그 세정방법
CN107090575B (zh) * 2016-02-17 2019-04-23 北京北方华创微电子装备有限公司 一种均流装置及反应腔室
KR101680850B1 (ko) * 2016-06-28 2016-11-29 주식회사 기가레인 배기유로의 크기가 조절되는 플라즈마 처리 장치
KR102641441B1 (ko) 2016-09-28 2024-02-29 삼성전자주식회사 링 어셈블리 및 이를 포함하는 척 어셈블리
KR102806341B1 (ko) 2017-01-04 2025-05-12 삼성전자주식회사 포커스 링 및 이를 포함하는 플라즈마 처리 장치
US10559451B2 (en) 2017-02-15 2020-02-11 Applied Materials, Inc. Apparatus with concentric pumping for multiple pressure regimes
CN107578975B (zh) * 2017-08-17 2020-06-19 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
WO2019033878A1 (zh) * 2017-08-17 2019-02-21 北京北方华创微电子装备有限公司 内衬、反应腔室及半导体加工设备
KR102449621B1 (ko) 2017-08-22 2022-09-30 삼성전자주식회사 쉬라우드 유닛 및 이를 포함하는 기판 처리 장치
CN107578977B (zh) * 2017-09-27 2025-01-14 北京北方华创微电子装备有限公司 反应腔室以及电容耦合等离子体设备
JP2019075517A (ja) * 2017-10-19 2019-05-16 東京エレクトロン株式会社 処理装置及び拡散路を有する部材
CN110544645B (zh) * 2018-05-28 2022-05-27 北京北方华创微电子装备有限公司 工艺腔室用匀流件、工艺腔室和半导体处理设备
CN108831906A (zh) 2018-05-31 2018-11-16 武汉华星光电半导体显示技术有限公司 Oled显示面板及oled显示器
US10927461B2 (en) * 2018-08-31 2021-02-23 Applied Materials, Inc. Gas diffuser support structure for reduced particle generation
CN208835019U (zh) * 2018-11-12 2019-05-07 江苏鲁汶仪器有限公司 一种反应腔内衬
JP1638504S (https=) * 2018-12-06 2019-08-05
JP7101628B2 (ja) * 2019-02-04 2022-07-15 東京エレクトロン株式会社 プラズマ処理装置および電極構造体
JP7199246B2 (ja) * 2019-02-19 2023-01-05 東京エレクトロン株式会社 基板処理装置
CN110093593A (zh) * 2019-05-20 2019-08-06 北京捷造光电技术有限公司 一种用于大面积pecvd工艺腔室双层排气结构
KR102746083B1 (ko) 2019-06-21 2024-12-26 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조 방법
CN112185786B (zh) * 2019-07-03 2024-04-05 中微半导体设备(上海)股份有限公司 等离子体处理设备及用于等离子体处理设备的接地环组件
KR102681009B1 (ko) * 2019-07-22 2024-07-03 주식회사 원익아이피에스 기판처리장치
CN114830318A (zh) * 2019-12-18 2022-07-29 朗姆研究公司 用于管理不均匀性的晶片平面下方的非对称清扫块
CN111105976B (zh) * 2019-12-24 2022-11-25 北京北方华创微电子装备有限公司 半导体设备反应腔室
WO2021162932A1 (en) * 2020-02-10 2021-08-19 Applied Materials, Inc. Methods and apparatus for improving flow uniformity in a process chamber
US12100576B2 (en) * 2020-04-30 2024-09-24 Applied Materials, Inc. Metal oxide preclean chamber with improved selectivity and flow conductance
JP7479236B2 (ja) * 2020-07-31 2024-05-08 東京エレクトロン株式会社 基板処理装置
US20220051912A1 (en) * 2020-08-12 2022-02-17 Taiwan Semiconductor Manufacturing Company Limited Gas flow control during semiconductor fabrication
US20220084845A1 (en) * 2020-09-17 2022-03-17 Applied Materials, Inc. High conductance process kit
KR102883703B1 (ko) * 2020-11-05 2025-11-10 삼성전자주식회사 기판 처리 방법 및 장치
KR102517977B1 (ko) * 2022-01-28 2023-04-04 삼성전자주식회사 플라즈마 배플, 이를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법
US20240006203A1 (en) * 2022-06-30 2024-01-04 Taiwan Semiconductor Manufacturing Company Chamber liner for semiconductor processing
CN115360129B (zh) * 2022-10-24 2023-03-24 无锡邑文电子科技有限公司 侧抽真空蚀刻机台
CN118675966A (zh) * 2023-03-20 2024-09-20 北京北方华创微电子装备有限公司 半导体工艺设备及其内衬结构
US20250037976A1 (en) * 2023-07-28 2025-01-30 Applied Materials, Inc. Process stack for cvd plasma treatment
USD1109284S1 (en) 2024-06-07 2026-01-13 Asm Ip Holding B.V. Flow control ring

Family Cites Families (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2610556C2 (de) * 1976-03-12 1978-02-02 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Verteilen strömender Medien über einen Strömungsquerschnitt
US5188672A (en) * 1990-06-28 1993-02-23 Applied Materials, Inc. Reduction of particulate contaminants in chemical-vapor-deposition apparatus
US6095083A (en) 1991-06-27 2000-08-01 Applied Materiels, Inc. Vacuum processing chamber having multi-mode access
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US5788799A (en) * 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
EP0821395A3 (en) * 1996-07-19 1998-03-25 Tokyo Electron Limited Plasma processing apparatus
JP3582287B2 (ja) * 1997-03-26 2004-10-27 株式会社日立製作所 エッチング装置
US6251216B1 (en) * 1997-12-17 2001-06-26 Matsushita Electronics Corporation Apparatus and method for plasma processing
US6120605A (en) * 1998-02-05 2000-09-19 Asm Japan K.K. Semiconductor processing system
JP4217299B2 (ja) * 1998-03-06 2009-01-28 東京エレクトロン株式会社 処理装置
US6273022B1 (en) 1998-03-14 2001-08-14 Applied Materials, Inc. Distributed inductively-coupled plasma source
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
KR100265288B1 (ko) * 1998-04-22 2000-10-02 윤종용 반도체소자 제조용 식각장치의 배플
US6228232B1 (en) * 1998-07-09 2001-05-08 Semitool, Inc. Reactor vessel having improved cup anode and conductor assembly
US5997589A (en) * 1998-07-09 1999-12-07 Winbond Electronics Corp. Adjustment pumping plate design for the chamber of semiconductor equipment
US6170429B1 (en) 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
US6364954B2 (en) 1998-12-14 2002-04-02 Applied Materials, Inc. High temperature chemical vapor deposition chamber
US6221202B1 (en) * 1999-04-01 2001-04-24 International Business Machines Corporation Efficient plasma containment structure
US6206976B1 (en) * 1999-08-27 2001-03-27 Lucent Technologies Inc. Deposition apparatus and related method with controllable edge exclusion
KR20010062209A (ko) * 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
US6415804B1 (en) * 1999-12-23 2002-07-09 Lam Research Corporation Bowl for processing semiconductor wafers
JP4592856B2 (ja) 1999-12-24 2010-12-08 東京エレクトロン株式会社 バッフル板及びガス処理装置
TW480595B (en) * 2000-01-12 2002-03-21 Tokyo Electron Ltd Vacuum processing apparatus
US6261408B1 (en) * 2000-02-16 2001-07-17 Applied Materials, Inc. Method and apparatus for semiconductor processing chamber pressure control
US20020069970A1 (en) * 2000-03-07 2002-06-13 Applied Materials, Inc. Temperature controlled semiconductor processing chamber liner
US6863835B1 (en) 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
US6531069B1 (en) * 2000-06-22 2003-03-11 International Business Machines Corporation Reactive Ion Etching chamber design for flip chip interconnections
US7011039B1 (en) * 2000-07-07 2006-03-14 Applied Materials, Inc. Multi-purpose processing chamber with removable chamber liner
US6716302B2 (en) 2000-11-01 2004-04-06 Applied Materials Inc. Dielectric etch chamber with expanded process window
US6403491B1 (en) * 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window
JP4602532B2 (ja) * 2000-11-10 2010-12-22 東京エレクトロン株式会社 プラズマ処理装置
US6527911B1 (en) 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
KR100431660B1 (ko) * 2001-07-24 2004-05-17 삼성전자주식회사 반도체 장치의 제조를 위한 건식 식각 장치
US20030092278A1 (en) * 2001-11-13 2003-05-15 Fink Steven T. Plasma baffle assembly
US20040129218A1 (en) * 2001-12-07 2004-07-08 Toshiki Takahashi Exhaust ring mechanism and plasma processing apparatus using the same
US6827815B2 (en) * 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
US20030192646A1 (en) 2002-04-12 2003-10-16 Applied Materials, Inc. Plasma processing chamber having magnetic assembly and method
US20050121143A1 (en) 2002-05-23 2005-06-09 Lam Research Corporation Pump baffle and screen to improve etch uniformity
US20040040664A1 (en) 2002-06-03 2004-03-04 Yang Jang Gyoo Cathode pedestal for a plasma etch reactor
KR100460143B1 (ko) * 2002-08-02 2004-12-03 삼성전자주식회사 반도체 제조설비용 프로세스 챔버
US6963043B2 (en) * 2002-08-28 2005-11-08 Tokyo Electron Limited Asymmetrical focus ring
US7048837B2 (en) * 2002-09-13 2006-05-23 Applied Materials, Inc. End point detection for sputtering and resputtering
US7166200B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US6798519B2 (en) * 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7204912B2 (en) * 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US20040082251A1 (en) * 2002-10-29 2004-04-29 Applied Materials, Inc. Apparatus for adjustable gas distribution for semiconductor substrate processing
US7291566B2 (en) * 2003-03-31 2007-11-06 Tokyo Electron Limited Barrier layer for a processing element and a method of forming the same
US7560376B2 (en) * 2003-03-31 2009-07-14 Tokyo Electron Limited Method for adjoining adjacent coatings on a processing element
US7972467B2 (en) 2003-04-17 2011-07-05 Applied Materials Inc. Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor
JP4255747B2 (ja) 2003-05-13 2009-04-15 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US7910218B2 (en) * 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US8236105B2 (en) 2004-04-08 2012-08-07 Applied Materials, Inc. Apparatus for controlling gas flow in a semiconductor substrate processing chamber
US20060000552A1 (en) * 2004-07-05 2006-01-05 Tokyo Electron Limited Plasma processing apparatus and cleaning method thereof
US7708834B2 (en) * 2004-11-02 2010-05-04 Tokyo Electron Limited Bolt and plasma processing apparatus provided with same
US7579067B2 (en) * 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method
CN100539000C (zh) * 2004-12-03 2009-09-09 东京毅力科创株式会社 电容耦合型等离子体处理装置
US7767055B2 (en) * 2004-12-03 2010-08-03 Tokyo Electron Limited Capacitive coupling plasma processing apparatus
JP5323303B2 (ja) 2004-12-03 2013-10-23 東京エレクトロン株式会社 プラズマ処理装置
US7552521B2 (en) * 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) * 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
US7416635B2 (en) * 2005-03-02 2008-08-26 Tokyo Electron Limited Gas supply member and plasma processing apparatus
US7198677B2 (en) * 2005-03-09 2007-04-03 Wafermasters, Inc. Low temperature wafer backside cleaning
US7560083B2 (en) * 2005-03-18 2009-07-14 Tokyo Electron Limited Method for removing water molecules from vacuum chamber, program for executing the method, and storage medium storing the program
JP4546303B2 (ja) 2005-03-24 2010-09-15 東京エレクトロン株式会社 プラズマ処理装置
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US7862683B2 (en) * 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
US7416677B2 (en) * 2006-08-11 2008-08-26 Tokyo Electron Limited Exhaust assembly for plasma processing system and method
US7854820B2 (en) 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
US9184072B2 (en) * 2007-07-27 2015-11-10 Mattson Technology, Inc. Advanced multi-workpiece processing chamber
US20090188625A1 (en) 2008-01-28 2009-07-30 Carducci James D Etching chamber having flow equalizer and lower liner
JP5264231B2 (ja) * 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
US7987814B2 (en) 2008-04-07 2011-08-02 Applied Materials, Inc. Lower liner with integrated flow equalizer and improved conductance
KR100998011B1 (ko) * 2008-05-22 2010-12-03 삼성엘이디 주식회사 화학기상 증착장치

Also Published As

Publication number Publication date
US7987814B2 (en) 2011-08-02
US8282736B2 (en) 2012-10-09
WO2009126576A3 (en) 2010-03-18
TW201334104A (zh) 2013-08-16
US20110284166A1 (en) 2011-11-24
US20120145326A1 (en) 2012-06-14
JP2011517116A (ja) 2011-05-26
US8118938B2 (en) 2012-02-21
KR20130071504A (ko) 2013-06-28
KR20100135894A (ko) 2010-12-27
KR101267452B1 (ko) 2013-05-31
KR20120123162A (ko) 2012-11-07
TWI387035B (zh) 2013-02-21
TW201308501A (zh) 2013-02-16
KR20120123161A (ko) 2012-11-07
CN103402299A (zh) 2013-11-20
CN101990789B (zh) 2013-07-17
US8440019B2 (en) 2013-05-14
US20090250169A1 (en) 2009-10-08
TWI397145B (zh) 2013-05-21
CN101990789A (zh) 2011-03-23
CN103402299B (zh) 2018-10-09
TWI397144B (zh) 2013-05-21
JP5875864B2 (ja) 2016-03-02
KR101267431B1 (ko) 2013-05-30
WO2009126576A2 (en) 2009-10-15
TW201308502A (zh) 2013-02-16
US20120325406A1 (en) 2012-12-27
TW200947592A (en) 2009-11-16

Similar Documents

Publication Publication Date Title
TWI435401B (zh) 具有整合均流板及改善之傳導性的下部內襯件
KR101365113B1 (ko) 유동 이퀄라이저 및 하부 라이너를 구비한 에칭 챔버
US20160284522A1 (en) Upper electrode, edge ring, and plasma processing apparatus
US20050224180A1 (en) Apparatus for controlling gas flow in a semiconductor substrate processing chamber
TWI445078B (zh) 噴氣頭絕緣器及蝕刻室襯墊
TWI870447B (zh) 用於處理腔室的高導通下部護罩
TW201606844A (zh) 擋板及包含該擋板之基板處理裝置
TWI868204B (zh) 用於處理腔室的處理套件