WO2009126576A2 - Lower liner with integrated flow equalizer and improved conductance - Google Patents

Lower liner with integrated flow equalizer and improved conductance Download PDF

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Publication number
WO2009126576A2
WO2009126576A2 PCT/US2009/039662 US2009039662W WO2009126576A2 WO 2009126576 A2 WO2009126576 A2 WO 2009126576A2 US 2009039662 W US2009039662 W US 2009039662W WO 2009126576 A2 WO2009126576 A2 WO 2009126576A2
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
chamber liner
liner
quadrant
annular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/039662
Other languages
English (en)
French (fr)
Other versions
WO2009126576A3 (en
Inventor
James D. Carducci
Andrew Nguyen
Ajit Balakrishna
Michael C. Kutney
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to KR1020137015604A priority Critical patent/KR20130071504A/ko
Priority to CN2009801124193A priority patent/CN101990789B/zh
Priority to KR1020127028345A priority patent/KR101267452B1/ko
Priority to JP2011504110A priority patent/JP5875864B2/ja
Priority to KR1020127028342A priority patent/KR101267431B1/ko
Publication of WO2009126576A2 publication Critical patent/WO2009126576A2/en
Publication of WO2009126576A3 publication Critical patent/WO2009126576A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

Definitions

  • Modern integrated circuits are complex devices that may include millions of components on a single chip; however, the demand for faster, smaller electronic devices is ever increasing. This demand not only requires faster circuits, but it also requires greater circuit density on each chip. In order to achieve greater circuit density, minimal dimensions, or critical dimensions, of features of integrated circuit components must be reduced as well.
  • an annular chamber liner for a plasma chamber comprises a bottom wall, an inner wall extending upwardly from the bottom wall, and an outer wall extending upwardly and outwardly from the bottom wall.
  • the annular chamber liner has a plurality of slots extending through the bottom and outer walls. In one embodiment, the slots equalize the flow of processing gas. The plurality of slots is arranged such that at least one slot is present within each quadrant of the annular chamber liner.
  • Processing gas may also be drawn around the baffle 116 in the area between the baffle 116 and the upper liner 126. Generally, most of the plasma is confined to the processing area 128, but some plasma may extend out beyond the outer diameter of the baffle 116 and be pulled below the baffle 116.
  • a lower chamber liner 120 may be present to protect the lower chamber walls from the plasma. The lower liner 120 may be removed during processing downtime to be cleaned or replaced.
  • the lower liner 120 may be coupled to the bottom of the chamber body 102 by a fastening mechanism 124.
  • the fastening mechanism 124 may comprise a screw.
  • the fastening mechanism 124 may be countersunk into the lower liner 120.
  • a vacuum pump 114 may evacuate the processing chamber body 102 and thus pull processing gases through the baffle 116 and through the area between the baffle 116 and the upper liner 126.
  • the lower chamber liner 120 may be configured in an elevated position with respect to the bottom of the chamber body 102, such that a large plenum 122 may exist between the bottom surface 121 of the lower chamber liner 120 and the bottom surface 101 of the chamber body 102 around the entire periphery of the chamber body 102.
  • the lower chamber liner 120 may have an upwardly sloping outer wall 123, such that the plenum 122 extends upwardly around the entire periphery of the lower chamber liner 120 between the outer wall 123 of the lower chamber liner and the wall 103 of the chamber body 102.
  • the lower chamber liner 120 may contain a plurality of apertures (not shown in Figure 1) to equalize the flow of processing gas drawn therethrough. Example of suitable apertures can be seen in Figures 2B and 3.
  • the large plenum 122 functions to broadly distribute the vacuum draw.
  • the greatest draw through the lower chamber liner 120 may be achieved in the area closest to the exhaust port 113 in the chamber body 102, which may lead to non-uniformity in the etch plasma across the substrate 104.
  • the size and positioning of the apertures in the lower chamber liner 120 may be arranged as described below with respect to Figures 2B, and 3.
  • FIG. 2B is a schematic bottom view of a lower chamber liner 200 of Figure 2A.
  • the gas passages 208 in the bottom wall 204 and the side wall 206 are broadly spaced apart in a first quadrant 210, which is to be positioned adjacent the exhaust port 113 in the chamber body 102.
  • the gas passages 208 may be more narrowly spaced in a second quadrant 220 and a third quadrant 230 extending away from the first quadrant 210 of the lower chamber liner 200.
  • the spacing of the gas passages 208 may decrease across the second quadrant 220 and the third quadrant 230 extending away from the first quadrant 210.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
PCT/US2009/039662 2008-04-07 2009-04-06 Lower liner with integrated flow equalizer and improved conductance Ceased WO2009126576A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020137015604A KR20130071504A (ko) 2008-04-07 2009-04-06 통합형 유동 이퀄라이저와 개선된 콘덕턴스를 가지는 하부 라이너
CN2009801124193A CN101990789B (zh) 2008-04-07 2009-04-06 具有整合的均流器并具有改善的传导性的下部内衬件
KR1020127028345A KR101267452B1 (ko) 2008-04-07 2009-04-06 통합형 유동 이퀄라이저와 개선된 콘덕턴스를 가지는 하부 라이너
JP2011504110A JP5875864B2 (ja) 2008-04-07 2009-04-06 統合型流量平衡器と改良されたコンダクタンスとを備える下部ライナ
KR1020127028342A KR101267431B1 (ko) 2008-04-07 2009-04-06 통합형 유동 이퀄라이저와 개선된 콘덕턴스를 가지는 하부 라이너

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/099,007 US7987814B2 (en) 2008-04-07 2008-04-07 Lower liner with integrated flow equalizer and improved conductance
US12/099,007 2008-04-07

Publications (2)

Publication Number Publication Date
WO2009126576A2 true WO2009126576A2 (en) 2009-10-15
WO2009126576A3 WO2009126576A3 (en) 2010-03-18

Family

ID=41132169

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/039662 Ceased WO2009126576A2 (en) 2008-04-07 2009-04-06 Lower liner with integrated flow equalizer and improved conductance

Country Status (6)

Country Link
US (4) US7987814B2 (https=)
JP (1) JP5875864B2 (https=)
KR (4) KR20100135894A (https=)
CN (2) CN101990789B (https=)
TW (4) TWI435401B (https=)
WO (1) WO2009126576A2 (https=)

Cited By (1)

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CN110527982A (zh) * 2014-09-05 2019-12-03 应用材料公司 用于外延腔室的衬垫

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