TWI435188B - 操作具有校正由光罩之精密效應所引起之成像像差的功能的微影投射曝光裝置的方法 - Google Patents
操作具有校正由光罩之精密效應所引起之成像像差的功能的微影投射曝光裝置的方法 Download PDFInfo
- Publication number
- TWI435188B TWI435188B TW100109849A TW100109849A TWI435188B TW I435188 B TWI435188 B TW I435188B TW 100109849 A TW100109849 A TW 100109849A TW 100109849 A TW100109849 A TW 100109849A TW I435188 B TWI435188 B TW I435188B
- Authority
- TW
- Taiwan
- Prior art keywords
- manipulator
- different
- structural
- illumination
- objective lens
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Mounting And Adjusting Of Optical Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31888010P | 2010-03-30 | 2010-03-30 | |
| DE102010029651A DE102010029651A1 (de) | 2010-06-02 | 2010-06-02 | Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201202866A TW201202866A (en) | 2012-01-16 |
| TWI435188B true TWI435188B (zh) | 2014-04-21 |
Family
ID=43902677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100109849A TWI435188B (zh) | 2010-03-30 | 2011-03-23 | 操作具有校正由光罩之精密效應所引起之成像像差的功能的微影投射曝光裝置的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9041908B2 (enExample) |
| JP (3) | JP5768124B2 (enExample) |
| KR (1) | KR101518107B1 (enExample) |
| CN (1) | CN102834776B (enExample) |
| DE (1) | DE102010029651A1 (enExample) |
| TW (1) | TWI435188B (enExample) |
| WO (1) | WO2011120821A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010061950A1 (de) * | 2010-11-25 | 2012-05-31 | Carl Zeiss Smt Gmbh | Verfahren sowie Anordnung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System |
| ES2524120T3 (es) | 2010-12-28 | 2014-12-04 | Unilever N.V. | Método para la producción de una emulsión |
| US9410596B2 (en) | 2011-11-04 | 2016-08-09 | Honeywell International Inc. | Mounting systems for structural members, fastening assemblies thereof, and vibration isolation systems including the same |
| US9475594B2 (en) | 2012-09-25 | 2016-10-25 | Honeywell International Inc. | Launch lock assemblies with reduced preload and spacecraft isolation systems including the same |
| DE102013204391B3 (de) * | 2013-03-13 | 2014-05-28 | Carl Zeiss Smt Gmbh | Projektionsobjektiv mit Wellenfrontmanipulator |
| US9298102B2 (en) | 2013-03-13 | 2016-03-29 | Carl Zeiss Smt Gmbh | Projection lens with wavefront manipulator |
| US9651872B2 (en) | 2013-03-13 | 2017-05-16 | Carl Zeiss Smt Gmbh | Projection lens with wavefront manipulator |
| US9690189B2 (en) * | 2013-06-21 | 2017-06-27 | Hoya Corporation | Mask blank substrate, mask blank, transfer mask, and method of manufacturing semiconductor device |
| CN106575088B (zh) | 2014-07-22 | 2019-06-11 | 卡尔蔡司Smt有限责任公司 | 三维测量光刻掩模的3d空间像的方法 |
| DE102014218474A1 (de) | 2014-09-15 | 2016-03-17 | Carl Zeiss Smt Gmbh | Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie |
| TWI780741B (zh) * | 2016-02-24 | 2022-10-11 | 美商克萊譚克公司 | 光學計量之準確度提升 |
| DE102016205617A1 (de) | 2016-04-05 | 2017-10-05 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage |
| DE102016209616A1 (de) * | 2016-06-01 | 2017-12-07 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zur Vorhersage des mit einer Maske bei Durchführung eines Lithographieprozesses erzielten Abbildungsergebnisses |
| DE102016212477A1 (de) | 2016-07-08 | 2018-01-11 | Carl Zeiss Smt Gmbh | Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems |
| US10649342B2 (en) * | 2016-07-11 | 2020-05-12 | Asml Netherlands B.V. | Method and apparatus for determining a fingerprint of a performance parameter |
| DE102016221261A1 (de) * | 2016-10-28 | 2018-05-03 | Carl Zeiss Smt Gmbh | Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauelemente |
| US10162257B2 (en) | 2016-12-15 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet lithography system, device, and method for printing low pattern density features |
| DE102017115262B9 (de) | 2017-07-07 | 2021-05-27 | Carl Zeiss Smt Gmbh | Verfahren zur Charakterisierung einer Maske für die Mikrolithographie |
| DE102017115365B4 (de) * | 2017-07-10 | 2020-10-15 | Carl Zeiss Smt Gmbh | Inspektionsvorrichtung für Masken für die Halbleiterlithographie und Verfahren |
| DE102018202637B4 (de) * | 2018-02-21 | 2021-09-23 | Carl Zeiss Smt Gmbh | Verfahren zur Bestimmung einer Fokuslage einer Lithographie-Maske und Metrologiesystem zur Durchführung eines derartigen Verfahrens |
| US11429027B2 (en) * | 2018-08-17 | 2022-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photolithography method and apparatus |
| EP3963404B1 (en) * | 2019-04-30 | 2023-01-25 | ASML Netherlands B.V. | Method and apparatus for photolithographic imaging |
| DE102019208552B4 (de) * | 2019-06-12 | 2025-10-09 | Carl Zeiss Smt Gmbh | Verfahren zum Ermitteln eines Produktions-Luftbildes eines zu vermessenden Objektes |
| DE102020209784A1 (de) * | 2020-08-04 | 2022-02-10 | Carl Zeiss Smt Gmbh | Verfahren zur herstellung oder einstellung einer projektionsbelichtungsanlage |
| DE102023127297B3 (de) * | 2023-10-06 | 2025-03-20 | Carl Zeiss Smt Gmbh | Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage, mikrolithographische Maske sowie Projektionsbelichtungsanlage |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0153796B1 (ko) * | 1993-09-24 | 1998-11-16 | 사토 후미오 | 노광장치 및 노광방법 |
| JP3368091B2 (ja) | 1994-04-22 | 2003-01-20 | キヤノン株式会社 | 投影露光装置及びデバイスの製造方法 |
| DE69728126T2 (de) | 1996-12-28 | 2005-01-20 | Canon K.K. | Projektionsbelichtungsapparat und Verfahren zur Herstellung einer Vorrichtung |
| JP2000091209A (ja) * | 1998-09-14 | 2000-03-31 | Nikon Corp | 露光装置の製造方法、露光装置、及びデバイス製造方法 |
| SE9800665D0 (sv) | 1998-03-02 | 1998-03-02 | Micronic Laser Systems Ab | Improved method for projection printing using a micromirror SLM |
| US6816302B2 (en) | 1998-03-02 | 2004-11-09 | Micronic Laser Systems Ab | Pattern generator |
| US7186983B2 (en) | 1998-05-05 | 2007-03-06 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
| DE19901295A1 (de) | 1999-01-15 | 2000-07-20 | Zeiss Carl Fa | Optische Abbildungsvorrichtung, insbesondere Objektiv, mit wenigstens einem optischen Element |
| DE10143385C2 (de) | 2001-09-05 | 2003-07-17 | Zeiss Carl | Projektionsbelichtungsanlage |
| DE10209016A1 (de) | 2002-02-28 | 2003-09-11 | Alen Jambrecina | Ultraschallkopf mit Flüssigkeitsspendevorrichtung |
| US20030234918A1 (en) | 2002-06-20 | 2003-12-25 | Nikon Corporation | Adjustable soft mounts in kinematic lens mounting system |
| US7042550B2 (en) | 2002-11-28 | 2006-05-09 | Asml Netherlands B.V. | Device manufacturing method and computer program |
| EP1670041A4 (en) | 2003-08-28 | 2007-10-17 | Nikon Corp | METHOD AND APPARATUS FOR EXPOSURE, AND METHOD FOR MANUFACTURING ASSOCIATED DEVICE |
| KR101159867B1 (ko) | 2003-09-12 | 2012-06-26 | 칼 짜이스 에스엠티 게엠베하 | 마이크로리소그래피 투사 노출 장치용 조명 시스템 |
| US20080151364A1 (en) | 2004-01-14 | 2008-06-26 | Carl Zeiss Smt Ag | Catadioptric projection objective |
| KR101213831B1 (ko) | 2004-05-17 | 2012-12-24 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
| US7403264B2 (en) * | 2004-07-08 | 2008-07-22 | Asml Netherlands B.V. | Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus |
| JP5179754B2 (ja) * | 2004-08-09 | 2013-04-10 | 株式会社ニコン | 光学特性計測装置及び光学特性計測方法、露光装置及び露光方法、並びにデバイス製造方法 |
| DE102005034991A1 (de) | 2004-09-08 | 2006-04-13 | Carl Zeiss Smt Ag | Strahlumformsystem für ein Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage |
| KR100614651B1 (ko) | 2004-10-11 | 2006-08-22 | 삼성전자주식회사 | 회로 패턴의 노광을 위한 장치 및 방법, 사용되는포토마스크 및 그 설계 방법, 그리고 조명계 및 그 구현방법 |
| JP2006173305A (ja) * | 2004-12-15 | 2006-06-29 | Canon Inc | 露光装置及び方法、並びに、デバイス製造方法 |
| US7312852B2 (en) | 2004-12-28 | 2007-12-25 | Asml Netherlands B.V. | Polarized radiation in lithographic apparatus and device manufacturing method |
| JP4753009B2 (ja) * | 2005-05-24 | 2011-08-17 | 株式会社ニコン | 計測方法、露光方法、及び露光装置 |
| JP4701030B2 (ja) * | 2005-07-22 | 2011-06-15 | キヤノン株式会社 | 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム |
| DE102005057860A1 (de) | 2005-12-03 | 2007-06-06 | Carl Zeiss Smt Ag | Objektiv, insbesondere Projektionsobjektiv für die Halbleiterlithographie |
| DE602005021127D1 (de) | 2005-12-09 | 2010-06-17 | Imec | Verfahren und Vorrichtungen zur Lithographie |
| JP4793683B2 (ja) * | 2006-01-23 | 2011-10-12 | 株式会社ニコン | 算出方法、調整方法及び露光方法、並びに像形成状態調整システム及び露光装置 |
| JP2008041710A (ja) * | 2006-08-01 | 2008-02-21 | Fujitsu Ltd | 照明光学装置、露光方法及び設計方法 |
| DE102006045075A1 (de) * | 2006-09-21 | 2008-04-03 | Carl Zeiss Smt Ag | Steuerbares optisches Element |
| DE102006047666A1 (de) | 2006-09-28 | 2008-04-03 | Carl Zeiss Smt Ag | Projektionsobjektiv für eine Mikrolithographieanlage mit verbesserten Abbildungseigenschaften und Verfahren zum Verbessern der Abbildungseigenschaften des Projektionsobjektives |
| EP1950594A1 (de) | 2007-01-17 | 2008-07-30 | Carl Zeiss SMT AG | Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik |
| EP2181357A1 (en) | 2007-08-24 | 2010-05-05 | Carl Zeiss SMT AG | Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography |
| DE102007043958B4 (de) | 2007-09-14 | 2011-08-25 | Carl Zeiss SMT GmbH, 73447 | Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage |
| JP4971932B2 (ja) * | 2007-10-01 | 2012-07-11 | キヤノン株式会社 | 照明光学系、露光装置、デバイス製造方法および偏光制御ユニット |
| JP5487118B2 (ja) | 2008-02-15 | 2014-05-07 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィのための投影露光装置に使用するファセットミラー |
| DE102009016063A1 (de) | 2008-05-21 | 2009-11-26 | Carl Zeiss Smt Ag | Mikrolithographisches Projektionsbelichtungsverfahren, sowie Projektionsbelichtungsanlage |
| JP5078764B2 (ja) | 2008-06-10 | 2012-11-21 | キヤノン株式会社 | 計算機ホログラム、露光装置及びデバイスの製造方法 |
-
2010
- 2010-06-02 DE DE102010029651A patent/DE102010029651A1/de not_active Ceased
-
2011
- 2011-03-17 JP JP2013501741A patent/JP5768124B2/ja active Active
- 2011-03-17 KR KR1020127025419A patent/KR101518107B1/ko active Active
- 2011-03-17 WO PCT/EP2011/054084 patent/WO2011120821A1/en not_active Ceased
- 2011-03-17 CN CN201180016812.XA patent/CN102834776B/zh active Active
- 2011-03-23 TW TW100109849A patent/TWI435188B/zh active
-
2012
- 2012-07-23 US US13/555,785 patent/US9041908B2/en active Active
-
2015
- 2015-04-30 US US14/700,973 patent/US20150234289A1/en not_active Abandoned
- 2015-06-22 JP JP2015124720A patent/JP6527397B2/ja active Active
-
2019
- 2019-02-27 JP JP2019034562A patent/JP2019095814A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US9041908B2 (en) | 2015-05-26 |
| TW201202866A (en) | 2012-01-16 |
| WO2011120821A1 (en) | 2011-10-06 |
| CN102834776B (zh) | 2015-05-06 |
| JP5768124B2 (ja) | 2015-08-26 |
| JP2015222428A (ja) | 2015-12-10 |
| US20120320358A1 (en) | 2012-12-20 |
| JP2019095814A (ja) | 2019-06-20 |
| CN102834776A (zh) | 2012-12-19 |
| US20150234289A1 (en) | 2015-08-20 |
| DE102010029651A1 (de) | 2011-12-08 |
| JP6527397B2 (ja) | 2019-06-05 |
| JP2013524497A (ja) | 2013-06-17 |
| KR101518107B1 (ko) | 2015-05-06 |
| KR20130019384A (ko) | 2013-02-26 |
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