TWI434918B - 包含離子性聚電解質之銅ｃｍｐ組合物及方法 - Google Patents

包含離子性聚電解質之銅ｃｍｐ組合物及方法 Download PDF

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Publication number
TWI434918B
TWI434918B TW097131763A TW97131763A TWI434918B TW I434918 B TWI434918 B TW I434918B TW 097131763 A TW097131763 A TW 097131763A TW 97131763 A TW97131763 A TW 97131763A TW I434918 B TWI434918 B TW I434918B
Authority
TW
Taiwan
Prior art keywords
composition
polyelectrolyte
copper
weight
cmp
Prior art date
Application number
TW097131763A
Other languages
English (en)
Chinese (zh)
Other versions
TW200927897A (en
Inventor
懷特 丹妮拉
凱勒 傑森
帕克 約翰
Original Assignee
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW200927897A publication Critical patent/TW200927897A/zh
Application granted granted Critical
Publication of TWI434918B publication Critical patent/TWI434918B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H10P52/403—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW097131763A 2007-08-28 2008-08-20 包含離子性聚電解質之銅ｃｍｐ組合物及方法 TWI434918B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/895,896 US20090056231A1 (en) 2007-08-28 2007-08-28 Copper CMP composition containing ionic polyelectrolyte and method

Publications (2)

Publication Number Publication Date
TW200927897A TW200927897A (en) 2009-07-01
TWI434918B true TWI434918B (zh) 2014-04-21

Family

ID=40405295

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097131763A TWI434918B (zh) 2007-08-28 2008-08-20 包含離子性聚電解質之銅ｃｍｐ組合物及方法

Country Status (8)

Country Link
US (1) US20090056231A1 (enExample)
EP (1) EP2190947A4 (enExample)
JP (1) JP5960386B2 (enExample)
KR (1) KR101305840B1 (enExample)
CN (1) CN101796160B (enExample)
SG (1) SG183780A1 (enExample)
TW (1) TWI434918B (enExample)
WO (1) WO2009032065A1 (enExample)

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CN101665661A (zh) * 2008-09-05 2010-03-10 安集微电子科技(上海)有限公司 胺类化合物的应用以及一种化学机械抛光液
TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
US20120186572A1 (en) * 2009-07-28 2012-07-26 Helmuth Treichel Silicon wafer sawing fluid and process for use thereof
JP5774283B2 (ja) * 2010-04-08 2015-09-09 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
WO2013115172A1 (ja) 2012-02-01 2013-08-08 日立化成株式会社 金属用研磨液及び研磨方法
US8778212B2 (en) 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
JP2014041978A (ja) 2012-08-23 2014-03-06 Fujimi Inc 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法
EP3666837A1 (en) * 2012-11-02 2020-06-17 Lawrence Livermore National Security, LLC Suspension for preventing agglomeration of charged colloids
CN103865402A (zh) * 2012-12-17 2014-06-18 安集微电子（上海）有限公司 一种化学机械抛光液
US9303187B2 (en) 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
JP6400897B2 (ja) * 2013-11-06 2018-10-03 ニッタ・ハース株式会社 研磨組成物
JPWO2015146468A1 (ja) * 2014-03-28 2017-04-13 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US9914852B2 (en) 2014-08-19 2018-03-13 Fujifilm Planar Solutions, LLC Reduction in large particle counts in polishing slurries
JP6495230B2 (ja) 2016-12-22 2019-04-03 花王株式会社 シリコンウェーハ用リンス剤組成物
KR101874996B1 (ko) * 2016-12-27 2018-07-05 한남대학교 산학협력단 연마효율이 우수한 화학-기계적 연마 슬러리
US10170335B1 (en) * 2017-09-21 2019-01-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for cobalt
JP7330668B2 (ja) * 2018-03-08 2023-08-22 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法および半導体基板の製造方法
CN108930058B (zh) * 2018-07-06 2020-07-21 鹤山市精工制版有限公司 一种电化学处理液及其应用
JP7041714B2 (ja) * 2019-06-26 2022-03-24 花王株式会社 酸化珪素膜用研磨液組成物
TWI865805B (zh) * 2020-07-28 2024-12-11 美商Ｃｍｃ材料有限責任公司 包含陰離子性及陽離子性抑制劑之cmp組合物
KR20230044296A (ko) * 2020-07-29 2023-04-03 버슘머트리얼즈 유에스, 엘엘씨 구리 및 실리콘 관통 전극(tsv)의 화학적 기계적 평탄화(cmp)를 위한 패드-인-어-보틀(pib) 기술

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JP4952584B2 (ja) * 2005-12-27 2012-06-13 日立化成工業株式会社 金属用研磨液及び被研磨膜の研磨方法

Also Published As

Publication number Publication date
US20090056231A1 (en) 2009-03-05
KR101305840B1 (ko) 2013-09-23
EP2190947A1 (en) 2010-06-02
CN101796160A (zh) 2010-08-04
EP2190947A4 (en) 2013-04-24
KR20100065341A (ko) 2010-06-16
WO2009032065A1 (en) 2009-03-12
JP5960386B2 (ja) 2016-08-02
SG183780A1 (en) 2012-09-27
JP2010538457A (ja) 2010-12-09
CN101796160B (zh) 2013-07-31
TW200927897A (en) 2009-07-01

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