JP5960386B2 - イオン性高分子電解質を含有する銅ｃｍｐ組成物及び方法 - Google Patents

イオン性高分子電解質を含有する銅ｃｍｐ組成物及び方法 Download PDF

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JP5960386B2
JP5960386B2 JP2010522907A JP2010522907A JP5960386B2 JP 5960386 B2 JP5960386 B2 JP 5960386B2 JP 2010522907 A JP2010522907 A JP 2010522907A JP 2010522907 A JP2010522907 A JP 2010522907A JP 5960386 B2 JP5960386 B2 JP 5960386B2
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composition
acid
copper
polyelectrolyte
cmp
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Japanese (ja)
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JP2010538457A (ja
JP2010538457A5 (enExample
Inventor
ホワイト，ダニエラ
ケレハー，ジェイソン
パーカー，ジョン
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2010522907A 2007-08-28 2008-08-19 イオン性高分子電解質を含有する銅ｃｍｐ組成物及び方法 Active JP5960386B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/895,896 US20090056231A1 (en) 2007-08-28 2007-08-28 Copper CMP composition containing ionic polyelectrolyte and method
US11/895,896 2007-08-28
PCT/US2008/009852 WO2009032065A1 (en) 2007-08-28 2008-08-19 Copper cmp composition containing ionic polyelectrolyte and method

Publications (3)

Publication Number Publication Date
JP2010538457A JP2010538457A (ja) 2010-12-09
JP2010538457A5 JP2010538457A5 (enExample) 2015-09-24
JP5960386B2 true JP5960386B2 (ja) 2016-08-02

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JP2010522907A Active JP5960386B2 (ja) 2007-08-28 2008-08-19 イオン性高分子電解質を含有する銅ｃｍｐ組成物及び方法

Country Status (8)

Country Link
US (1) US20090056231A1 (enExample)
EP (1) EP2190947A4 (enExample)
JP (1) JP5960386B2 (enExample)
KR (1) KR101305840B1 (enExample)
CN (1) CN101796160B (enExample)
SG (1) SG183780A1 (enExample)
TW (1) TWI434918B (enExample)
WO (1) WO2009032065A1 (enExample)

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JP5632378B2 (ja) * 2008-09-26 2014-11-26 ロディア オペレーションズＲｈｏｄｉａ Ｏｐｅｒａｔｉｏｎｓ 化学機械研磨用研磨剤組成物及びその使用法
US20120186572A1 (en) * 2009-07-28 2012-07-26 Helmuth Treichel Silicon wafer sawing fluid and process for use thereof
JP5774283B2 (ja) * 2010-04-08 2015-09-09 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
SG10201604674VA (en) 2012-02-01 2016-07-28 Hitachi Chemical Co Ltd Polishing liquid for metal and polishing method
US8778212B2 (en) 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
JP2014041978A (ja) 2012-08-23 2014-03-06 Fujimi Inc 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法
EP2914675A4 (en) * 2012-11-02 2016-10-05 L Livermore Nat Security Llc METHOD FOR PREVENTING AGGLOMERATION OF LOADED COLLOIDS WITHOUT LOSS OF SURFACE ACTIVITY
CN103865402A (zh) * 2012-12-17 2014-06-18 安集微电子（上海）有限公司 一种化学机械抛光液
US9303187B2 (en) 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
JP6400897B2 (ja) * 2013-11-06 2018-10-03 ニッタ・ハース株式会社 研磨組成物
CN106133105B (zh) * 2014-03-28 2018-04-03 福吉米株式会社 研磨用组合物及使用其的研磨方法
US9914852B2 (en) 2014-08-19 2018-03-13 Fujifilm Planar Solutions, LLC Reduction in large particle counts in polishing slurries
JP6495230B2 (ja) 2016-12-22 2019-04-03 花王株式会社 シリコンウェーハ用リンス剤組成物
KR101874996B1 (ko) * 2016-12-27 2018-07-05 한남대학교 산학협력단 연마효율이 우수한 화학-기계적 연마 슬러리
US10170335B1 (en) * 2017-09-21 2019-01-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for cobalt
JP7330668B2 (ja) * 2018-03-08 2023-08-22 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法および半導体基板の製造方法
CN108930058B (zh) * 2018-07-06 2020-07-21 鹤山市精工制版有限公司 一种电化学处理液及其应用
JP7041714B2 (ja) * 2019-06-26 2022-03-24 花王株式会社 酸化珪素膜用研磨液組成物
US12234382B2 (en) * 2020-07-28 2025-02-25 Cmc Materials Llc CMP composition including anionic and cationic inhibitors
WO2022026369A1 (en) * 2020-07-29 2022-02-03 Versum Materials Us, Llc Pad-in-a-bottle (pib) technology for copper and through-silicon via (tsv) chemical-mechanical planarization (cmp)

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Also Published As

Publication number Publication date
WO2009032065A1 (en) 2009-03-12
KR101305840B1 (ko) 2013-09-23
CN101796160B (zh) 2013-07-31
CN101796160A (zh) 2010-08-04
JP2010538457A (ja) 2010-12-09
SG183780A1 (en) 2012-09-27
EP2190947A4 (en) 2013-04-24
EP2190947A1 (en) 2010-06-02
TWI434918B (zh) 2014-04-21
TW200927897A (en) 2009-07-01
KR20100065341A (ko) 2010-06-16
US20090056231A1 (en) 2009-03-05

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