TWI433276B - 使用選擇性沈積可逆電阻切換元件之記憶體單元及其形成方法 - Google Patents
使用選擇性沈積可逆電阻切換元件之記憶體單元及其形成方法 Download PDFInfo
- Publication number
- TWI433276B TWI433276B TW097124473A TW97124473A TWI433276B TW I433276 B TWI433276 B TW I433276B TW 097124473 A TW097124473 A TW 097124473A TW 97124473 A TW97124473 A TW 97124473A TW I433276 B TWI433276 B TW I433276B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- switching element
- reversible resistance
- nio
- diode
- Prior art date
Links
- 230000002441 reversible effect Effects 0.000 title claims description 149
- 238000000034 method Methods 0.000 title claims description 86
- 239000004020 conductor Substances 0.000 claims description 116
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 103
- 239000000463 material Substances 0.000 claims description 76
- 229910052759 nickel Inorganic materials 0.000 claims description 52
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 50
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 50
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 47
- 229910052732 germanium Inorganic materials 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 22
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 21
- 238000005137 deposition process Methods 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 16
- -1 V 2 O 5 Inorganic materials 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 10
- 150000004772 tellurides Chemical group 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 237
- 230000004888 barrier function Effects 0.000 description 53
- 210000004027 cell Anatomy 0.000 description 52
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- 229910052721 tungsten Inorganic materials 0.000 description 20
- 239000010937 tungsten Substances 0.000 description 20
- 239000012790 adhesive layer Substances 0.000 description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 18
- 229920005591 polysilicon Polymers 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 15
- 239000003989 dielectric material Substances 0.000 description 14
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 13
- 229910052715 tantalum Inorganic materials 0.000 description 13
- 239000010936 titanium Substances 0.000 description 12
- 229910052719 titanium Inorganic materials 0.000 description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 8
- 229910000990 Ni alloy Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- ZGDWHDKHJKZZIQ-UHFFFAOYSA-N cobalt nickel Chemical compound [Co].[Ni].[Ni].[Ni] ZGDWHDKHJKZZIQ-UHFFFAOYSA-N 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 229910052758 niobium Inorganic materials 0.000 description 7
- 239000010955 niobium Substances 0.000 description 7
- 229910052720 vanadium Inorganic materials 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910001257 Nb alloy Inorganic materials 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- RHDUVDHGVHBHCL-UHFFFAOYSA-N niobium tantalum Chemical compound [Nb].[Ta] RHDUVDHGVHBHCL-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- VQYPKWOGIPDGPN-UHFFFAOYSA-N [C].[Ta] Chemical compound [C].[Ta] VQYPKWOGIPDGPN-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000080590 Niso Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- YTPZWYPLOCEZIX-UHFFFAOYSA-N [Nb]#[Nb] Chemical compound [Nb]#[Nb] YTPZWYPLOCEZIX-UHFFFAOYSA-N 0.000 description 1
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 150000001793 charged compounds Chemical class 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- IAOQICOCWPKKMH-UHFFFAOYSA-N dithieno[3,2-a:3',2'-d]thiophene Chemical compound C1=CSC2=C1C(C=CS1)=C1S2 IAOQICOCWPKKMH-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 229910000159 nickel phosphate Inorganic materials 0.000 description 1
- FBMUYWXYWIZLNE-UHFFFAOYSA-N nickel phosphide Chemical compound [Ni]=P#[Ni] FBMUYWXYWIZLNE-UHFFFAOYSA-N 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- LONQOCRNVIZRSA-UHFFFAOYSA-L nickel(2+);sulfite Chemical compound [Ni+2].[O-]S([O-])=O LONQOCRNVIZRSA-UHFFFAOYSA-L 0.000 description 1
- JOCJYBPHESYFOK-UHFFFAOYSA-K nickel(3+);phosphate Chemical compound [Ni+3].[O-]P([O-])([O-])=O JOCJYBPHESYFOK-UHFFFAOYSA-K 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- BFDHFSHZJLFAMC-UHFFFAOYSA-L nickel(ii) hydroxide Chemical compound [OH-].[OH-].[Ni+2] BFDHFSHZJLFAMC-UHFFFAOYSA-L 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- CXXKWLMXEDWEJW-UHFFFAOYSA-N tellanylidenecobalt Chemical compound [Te]=[Co] CXXKWLMXEDWEJW-UHFFFAOYSA-N 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/772,084 US8233308B2 (en) | 2007-06-29 | 2007-06-29 | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
| US11/772,090 US7846785B2 (en) | 2007-06-29 | 2007-06-29 | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200913171A TW200913171A (en) | 2009-03-16 |
| TWI433276B true TWI433276B (zh) | 2014-04-01 |
Family
ID=39791399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097124473A TWI433276B (zh) | 2007-06-29 | 2008-06-27 | 使用選擇性沈積可逆電阻切換元件之記憶體單元及其形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (2) | EP2485258B1 (enExample) |
| JP (1) | JP5624463B2 (enExample) |
| KR (3) | KR101447176B1 (enExample) |
| CN (1) | CN101720506B (enExample) |
| TW (1) | TWI433276B (enExample) |
| WO (1) | WO2009005700A2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4829320B2 (ja) * | 2009-03-17 | 2011-12-07 | 株式会社東芝 | 不揮発性半導体記憶装置の製造方法 |
| JP2010225741A (ja) | 2009-03-23 | 2010-10-07 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP4875118B2 (ja) * | 2009-03-24 | 2012-02-15 | 株式会社東芝 | 不揮発性記憶装置の製造方法 |
| US7927977B2 (en) * | 2009-07-15 | 2011-04-19 | Sandisk 3D Llc | Method of making damascene diodes using sacrificial material |
| JP5161911B2 (ja) * | 2010-03-25 | 2013-03-13 | 株式会社東芝 | 抵抗変化メモリ |
| CN102314940B (zh) * | 2010-07-07 | 2014-04-23 | 旺宏电子股份有限公司 | 具有晶体管与电阻值切换装置并联的非挥发性存储器装置 |
| JP5279879B2 (ja) * | 2011-08-09 | 2013-09-04 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP5611903B2 (ja) * | 2011-08-09 | 2014-10-22 | 株式会社東芝 | 抵抗変化メモリ |
| JP2013069922A (ja) | 2011-09-22 | 2013-04-18 | Toshiba Corp | 不揮発性半導体記憶装置の製造方法及び不揮発性半導体記憶装置 |
| JP5818679B2 (ja) | 2011-12-27 | 2015-11-18 | 株式会社東芝 | 半導体装置の製造方法 |
| JP5606478B2 (ja) * | 2012-03-22 | 2014-10-15 | 株式会社東芝 | 半導体記憶装置 |
| US9905757B2 (en) | 2013-11-12 | 2018-02-27 | Hewlett Packard Enterprise Development Lp | Nonlinear memristor devices with three-layer selectors |
| CN111106238B (zh) * | 2019-11-19 | 2023-08-29 | 中山大学 | 一种基于金属掺杂的双向阈值选通器及其制备方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5915167A (en) | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
| US6034882A (en) * | 1998-11-16 | 2000-03-07 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
| US7102150B2 (en) * | 2001-05-11 | 2006-09-05 | Harshfield Steven T | PCRAM memory cell and method of making same |
| US6545287B2 (en) * | 2001-09-07 | 2003-04-08 | Intel Corporation | Using selective deposition to form phase-change memory cells |
| US7109056B2 (en) * | 2001-09-20 | 2006-09-19 | Micron Technology, Inc. | Electro-and electroless plating of metal in the manufacture of PCRAM devices |
| US7176064B2 (en) | 2003-12-03 | 2007-02-13 | Sandisk 3D Llc | Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide |
| AU2003296988A1 (en) | 2002-12-19 | 2004-07-29 | Matrix Semiconductor, Inc | An improved method for making high-density nonvolatile memory |
| KR100773537B1 (ko) | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
| US7189626B2 (en) * | 2004-11-03 | 2007-03-13 | Micron Technology, Inc. | Electroless plating of metal caps for chalcogenide-based memory devices |
| JP2008060091A (ja) * | 2005-01-14 | 2008-03-13 | Matsushita Electric Ind Co Ltd | 抵抗変化素子 |
| US7812404B2 (en) * | 2005-05-09 | 2010-10-12 | Sandisk 3D Llc | Nonvolatile memory cell comprising a diode and a resistance-switching material |
| JP4364180B2 (ja) * | 2005-08-17 | 2009-11-11 | 株式会社東芝 | 集積回路装置の製造方法 |
| US20070132049A1 (en) * | 2005-12-12 | 2007-06-14 | Stipe Barry C | Unipolar resistance random access memory (RRAM) device and vertically stacked architecture |
| EP1966841B1 (en) * | 2005-12-20 | 2010-09-08 | Nxp B.V. | A vertical phase change memory cell and methods for manufacturing thereof |
| KR100717286B1 (ko) * | 2006-04-21 | 2007-05-15 | 삼성전자주식회사 | 상변화 물질층의 형성 방법과, 그 방법을 이용한 상변화기억 소자의 형성 방법 및 상변화 기억 소자 |
| WO2008097742A1 (en) * | 2007-02-05 | 2008-08-14 | Interolecular, Inc. | Methods for forming resistive switching memory elements |
| TW200915543A (en) * | 2007-06-29 | 2009-04-01 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
-
2008
- 2008-06-27 EP EP12166461.9A patent/EP2485258B1/en active Active
- 2008-06-27 TW TW097124473A patent/TWI433276B/zh not_active IP Right Cessation
- 2008-06-27 EP EP08779800A patent/EP2162916B1/en active Active
- 2008-06-27 KR KR1020097027303A patent/KR101447176B1/ko not_active Expired - Fee Related
- 2008-06-27 JP JP2010514824A patent/JP5624463B2/ja not_active Expired - Fee Related
- 2008-06-27 KR KR1020147008191A patent/KR20140061468A/ko not_active Ceased
- 2008-06-27 KR KR1020147008185A patent/KR101494335B1/ko not_active Expired - Fee Related
- 2008-06-27 CN CN200880022647.7A patent/CN101720506B/zh active Active
- 2008-06-27 WO PCT/US2008/007986 patent/WO2009005700A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP2485258A2 (en) | 2012-08-08 |
| KR101494335B1 (ko) | 2015-02-23 |
| WO2009005700A2 (en) | 2009-01-08 |
| EP2162916B1 (en) | 2013-03-20 |
| KR101447176B1 (ko) | 2014-10-08 |
| KR20100038317A (ko) | 2010-04-14 |
| CN101720506A (zh) | 2010-06-02 |
| CN101720506B (zh) | 2012-05-16 |
| EP2485258A3 (en) | 2012-08-22 |
| KR20140061467A (ko) | 2014-05-21 |
| JP2010532569A (ja) | 2010-10-07 |
| JP5624463B2 (ja) | 2014-11-12 |
| EP2162916A2 (en) | 2010-03-17 |
| TW200913171A (en) | 2009-03-16 |
| WO2009005700A3 (en) | 2009-02-26 |
| EP2485258B1 (en) | 2014-03-26 |
| KR20140061468A (ko) | 2014-05-21 |
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