JP5624463B2 - 選択付着による可逆的抵抗スイッチング素子を使用するメモリセルおよびその形成方法 - Google Patents

選択付着による可逆的抵抗スイッチング素子を使用するメモリセルおよびその形成方法 Download PDF

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JP5624463B2
JP5624463B2 JP2010514824A JP2010514824A JP5624463B2 JP 5624463 B2 JP5624463 B2 JP 5624463B2 JP 2010514824 A JP2010514824 A JP 2010514824A JP 2010514824 A JP2010514824 A JP 2010514824A JP 5624463 B2 JP5624463 B2 JP 5624463B2
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forming
layer
switching element
reversible resistance
nickel
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Japanese (ja)
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JP2010532569A5 (enExample
JP2010532569A (ja
Inventor
シュリッカー，エイプリル
ハーナー，エス．ブラッド
コネベッキー，マイケル
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サンディスクスリーディー，エルエルシー
サンディスク スリーディー，エルエルシー
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Priority claimed from US11/772,084 external-priority patent/US8233308B2/en
Priority claimed from US11/772,090 external-priority patent/US7846785B2/en
Application filed by サンディスクスリーディー，エルエルシー, サンディスク スリーディー，エルエルシー filed Critical サンディスクスリーディー，エルエルシー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Semiconductor Memories (AREA)
JP2010514824A 2007-06-29 2008-06-27 選択付着による可逆的抵抗スイッチング素子を使用するメモリセルおよびその形成方法 Expired - Fee Related JP5624463B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/772,090 2007-06-29
US11/772,084 US8233308B2 (en) 2007-06-29 2007-06-29 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US11/772,090 US7846785B2 (en) 2007-06-29 2007-06-29 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US11/772,084 2007-06-29
PCT/US2008/007986 WO2009005700A2 (en) 2007-06-29 2008-06-27 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same

Publications (3)

Publication Number Publication Date
JP2010532569A JP2010532569A (ja) 2010-10-07
JP2010532569A5 JP2010532569A5 (enExample) 2011-07-14
JP5624463B2 true JP5624463B2 (ja) 2014-11-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010514824A Expired - Fee Related JP5624463B2 (ja) 2007-06-29 2008-06-27 選択付着による可逆的抵抗スイッチング素子を使用するメモリセルおよびその形成方法

Country Status (6)

Country Link
EP (2) EP2485258B1 (enExample)
JP (1) JP5624463B2 (enExample)
KR (3) KR101447176B1 (enExample)
CN (1) CN101720506B (enExample)
TW (1) TWI433276B (enExample)
WO (1) WO2009005700A2 (enExample)

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* Cited by examiner, † Cited by third party
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JP4829320B2 (ja) * 2009-03-17 2011-12-07 株式会社東芝 不揮発性半導体記憶装置の製造方法
JP2010225741A (ja) 2009-03-23 2010-10-07 Toshiba Corp 不揮発性半導体記憶装置
JP4875118B2 (ja) * 2009-03-24 2012-02-15 株式会社東芝 不揮発性記憶装置の製造方法
US7927977B2 (en) * 2009-07-15 2011-04-19 Sandisk 3D Llc Method of making damascene diodes using sacrificial material
JP5161911B2 (ja) * 2010-03-25 2013-03-13 株式会社東芝 抵抗変化メモリ
CN102314940B (zh) * 2010-07-07 2014-04-23 旺宏电子股份有限公司 具有晶体管与电阻值切换装置并联的非挥发性存储器装置
JP5279879B2 (ja) * 2011-08-09 2013-09-04 株式会社東芝 不揮発性半導体記憶装置
JP5611903B2 (ja) * 2011-08-09 2014-10-22 株式会社東芝 抵抗変化メモリ
JP2013069922A (ja) 2011-09-22 2013-04-18 Toshiba Corp 不揮発性半導体記憶装置の製造方法及び不揮発性半導体記憶装置
JP5818679B2 (ja) 2011-12-27 2015-11-18 株式会社東芝 半導体装置の製造方法
JP5606478B2 (ja) * 2012-03-22 2014-10-15 株式会社東芝 半導体記憶装置
US9905757B2 (en) 2013-11-12 2018-02-27 Hewlett Packard Enterprise Development Lp Nonlinear memristor devices with three-layer selectors
CN111106238B (zh) * 2019-11-19 2023-08-29 中山大学 一种基于金属掺杂的双向阈值选通器及其制备方法

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US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6034882A (en) * 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US7102150B2 (en) * 2001-05-11 2006-09-05 Harshfield Steven T PCRAM memory cell and method of making same
US6545287B2 (en) * 2001-09-07 2003-04-08 Intel Corporation Using selective deposition to form phase-change memory cells
US7109056B2 (en) * 2001-09-20 2006-09-19 Micron Technology, Inc. Electro-and electroless plating of metal in the manufacture of PCRAM devices
US7176064B2 (en) 2003-12-03 2007-02-13 Sandisk 3D Llc Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide
AU2003296988A1 (en) 2002-12-19 2004-07-29 Matrix Semiconductor, Inc An improved method for making high-density nonvolatile memory
KR100773537B1 (ko) 2003-06-03 2007-11-07 삼성전자주식회사 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법
US7189626B2 (en) * 2004-11-03 2007-03-13 Micron Technology, Inc. Electroless plating of metal caps for chalcogenide-based memory devices
JP2008060091A (ja) * 2005-01-14 2008-03-13 Matsushita Electric Ind Co Ltd 抵抗変化素子
US7812404B2 (en) * 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
JP4364180B2 (ja) * 2005-08-17 2009-11-11 株式会社東芝 集積回路装置の製造方法
US20070132049A1 (en) * 2005-12-12 2007-06-14 Stipe Barry C Unipolar resistance random access memory (RRAM) device and vertically stacked architecture
EP1966841B1 (en) * 2005-12-20 2010-09-08 Nxp B.V. A vertical phase change memory cell and methods for manufacturing thereof
KR100717286B1 (ko) * 2006-04-21 2007-05-15 삼성전자주식회사 상변화 물질층의 형성 방법과, 그 방법을 이용한 상변화기억 소자의 형성 방법 및 상변화 기억 소자
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Also Published As

Publication number Publication date
EP2485258A2 (en) 2012-08-08
KR101494335B1 (ko) 2015-02-23
WO2009005700A2 (en) 2009-01-08
TWI433276B (zh) 2014-04-01
EP2162916B1 (en) 2013-03-20
KR101447176B1 (ko) 2014-10-08
KR20100038317A (ko) 2010-04-14
CN101720506A (zh) 2010-06-02
CN101720506B (zh) 2012-05-16
EP2485258A3 (en) 2012-08-22
KR20140061467A (ko) 2014-05-21
JP2010532569A (ja) 2010-10-07
EP2162916A2 (en) 2010-03-17
TW200913171A (en) 2009-03-16
WO2009005700A3 (en) 2009-02-26
EP2485258B1 (en) 2014-03-26
KR20140061468A (ko) 2014-05-21

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