TWI430468B - 包含電流散佈層的半導體發光裝置 - Google Patents
包含電流散佈層的半導體發光裝置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000003892 spreading Methods 0.000 title description 10
- 238000005253 cladding Methods 0.000 claims description 35
- 239000010410 layer Substances 0.000 description 94
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910017401 Au—Ge Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910002059 quaternary alloy Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001297 Zn alloy Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry
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Description
本發明係關於包含重摻雜電流散佈層的半導體發光裝置。
諸如發光二極體(LED)之半導體發光裝置為當前可用之最有效光源中之一種。當前在製造能在整個可見光譜中操作之高亮度LED中所關注之材料系統包含III-V族半導體,特定言之為鎵、鋁、銦及氮之二元、三元及四元合金,其亦被稱為III族氮化物材料;及鎵、鋁、銦及磷之二元、三元及四元合金,其亦被稱為III族磷化物材料。此等裝置通常具有一夾於一p型摻雜區域與一n型摻雜區域間之發光區域或活性區域。通常藉由金屬有機化學氣相沈積(MOCVD)、分子束磊晶法(MBE)或其它磊晶技術使III族氮化物裝置磊晶成長於藍寶石、碳化矽或III族氮化物基板上,且使III族磷化物裝置磊晶成長於砷化鎵上。
成長於一導電基板上之裝置通常具有形成於該裝置之相對側面上之接觸點。或者,由於成長於不良導電基板上之裝置,或由於光學或電學原因,可將該裝置蝕刻,以將n型及p型區域兩者之部分曝露於該裝置之相同側面上。接著,該等接觸點形成於所曝露之區域上。若該等接觸點為反射性的,且自與該等接觸點相對之裝置之側面提取光,則該裝置被稱為一覆晶。由於覆晶裝置上之該等接觸點中之至少一者不直接覆於活性區域上,因此若電流不有效地
散佈穿過p型及n型區域,則裝置效能可能降低。
根據本發明之實施例,III族氮化物或III族磷化物發光裝置包含一安置於一p型區域與一n型區域間之發光區域。至少一高度摻雜層安置於該n型區域或該p型區域內或安置於兩者之內,以提供電流散佈。
詳言之,用以改良III族磷化物裝置中之電流散佈之一途徑為增加接觸點間磊晶層之厚度。厚磊晶層大體而言增加了生產一裝置之成本及由於吸收而損失之光之量。此外,在一覆晶裝置中,為了形成接觸點對蝕刻以曝露內埋層之部分之需求限制某些裝置層可成長之厚度。
根據本發明之一實施例,一III族磷化物覆晶裝置包含一或多個高度摻雜層。該等高度摻雜層在該裝置內側向散佈電流,而不會增加該裝置內之磊晶層之厚度。圖1A為一III族磷化物覆晶LED之橫截面圖。圖1A之該裝置包含一夾於p型摻雜包覆區域5與n型摻雜包覆區域7間之活性區域(active region)6。如此項技術中已知,由該活性區域發射之光之波長可藉由選擇活性區域6中之該等層之寬度及成份而得以控制。一合適活性區域之實例包含由障壁層分隔之3或4個量子阱。一n型摻雜接觸區域8將n型接觸點10與n型摻雜包覆區域7分隔。一p型接觸點9形成於一p型摻雜接觸區域3上。穿過一無摻雜之透明GaP窗口層1自該裝置提取光。下表提供適用於層3、5、6、7及8中之每一者之厚度、成份
及摻雜物之實例。
上表提供之對於每一層之特徵僅作為實例,而非意欲為限制性的。舉例而言,可使用諸如Zn或Si之其它p型及n型之摻雜物。可在Semiconductors and Semimetals,第64冊,ElectroluminescenceI,Academic Press,San Francisco,2000,Gerd Mueller,ed.之1-3章中找出關於選擇裝置之該等層之合適特徵之更多資訊,其內容以引用之方式併入本文中。
如圖1B與圖1C中所說明,圖1A之p型接觸點9與n型接觸點10可為多層結構。圖1B說明一多層p型接觸點9之實例。一Au-Zn合金層9A形成為鄰近p型摻雜接觸區域3,以提供與半導體層之歐姆接觸。可由(例如)TiW、TiW:N及TiW之夾層之可選防護金屬層9B來保護Au-Zn層9A。接著,一諸如金之厚接觸層9C形成於防護層9B上。歐姆層9A及防護層9B可覆蓋反射器9C下之半導體層之所有部分或僅一部分。
如圖1C所說明,多層n型接觸點10可具有一類似結構。一Au-Ge合金層10A形成為鄰近n型摻雜接觸區域8,以提供與半導體層之歐姆接觸。可由(例如)一TiW、TiW:N及TiW之夾層之可選防護金屬層10B來保護Au-Ge層10A。金之厚反射層10C沈積於層10A及10B上。歐姆層10A大體上不非常具
有反射性,且因此通常形成為覆蓋反射器10C下之半導體層之一小部分之點(如圖1C中)或細條。
高度摻雜層4(圖1A中顯示為粗虛線)可包含於p型摻雜接觸區域3、p型摻雜包覆區域5及n型摻雜包覆區域7的其中之一或多個中。高度摻雜層4形成於可得益於額外電流散佈之裝置之區域中。在圖1A中說明之裝置中,p型接觸點9不直接覆於活性區域上,因此需要電流自p型接觸點9散佈至活性區域。相應地,活性區域6之p型側面可得益於額外電流散佈,且因此可包含高度摻雜層4。若n型接觸點10為一薄片接觸點,則n型接觸點10覆於整個活性區域上,且在活性區域6之n型側面上不需要額外電流散佈。若n型接觸點10包含如圖1C中說明之小區域之歐姆層10A及一較大反射薄片10C,則需要電流自各歐姆接觸區域10A散佈至反射薄片10C下無歐姆接觸區域10A之各區域。在此等裝置中,活性區域6之n型側面可得益於額外電流散佈,且因此可包含高度摻雜層4。
高度摻雜層4摻雜有與其形成於其中之區域相同之導電類型。舉例而言,裝置之n型區域內之高度摻雜層4為n型,且p型區域內之高度摻雜層4為p型。通常,儘管不需要,但高度摻雜層4摻雜有與周圍區域相同之摻雜物種類。高度摻雜層4可摻雜成具有約5x1018
cm-3
至約1x1019
cm-3
之濃度。相反地,n型摻雜包覆區域7、p型摻雜包覆區域5及p型摻雜接觸區域3通常摻雜成具有約5x1017
cm-3
至約1x1018
cm-3
之濃度。
由於高摻雜濃度,高度摻雜層4將趨於吸收光。因此,高度摻雜層4通常為薄的,例如在約10nm與100nm厚度之間,且位於盡可能遠離裝置之活性區域之處。多個高度摻雜層4可形成於單一區域中。在此等實施例中,該等高度摻雜層通常以至少10nm之距離間隔開,且所有該等高度摻雜層之總厚度為約100nm與約500nm之間。
在某些實施例中,高度摻雜層4為與其安置於其中之區域相同之成份。在其它實施例中,高度摻雜層4為四元AlInGaP層,其具有一比高度摻雜層4安置於其中之區域更低之帶隙,例如(Alx
Ga1-x
)0.5
In0.5
P,其中0.2<x<0.7。大體而言,一材料之帶隙越小,可更高度地摻雜該材料而不會犧牲晶體品質,因此用於高度摻雜層4之四元合金之使用可允許此等層得以更重地摻雜。此外,由四元重摻雜層產生之更低帶隙之小區域可藉由產生垂直位障來進一步促進側向電流散佈。
圖2說明用於一併有高度摻雜層之III族磷化物裝置之一實例之能帶圖之一部分。p型摻雜包覆區域5及n型摻雜包覆區域7中之每一者包含四個高度摻雜層4。p型摻雜包覆區域5及n型摻雜包覆區域7中之每一者具有約1微米之總厚度。高度摻雜層4中之每一者之厚度均為約50nm,且以約100nm之距離分隔。由於高度摻雜層4之吸收性質,所以將此等層定位於p型摻雜包覆區域5及n型摻雜包覆區域7之最遠離活性區域6之部分中。高度摻雜層為摻雜成具有約5x1018
cm-3
之濃度之(Al0.65
Ga0.35
)0.5
In0.5
P。
高度摻雜電流散佈層亦可用於III族氮化物發光裝置中。圖3為一包含高度摻雜層之III族氮化物覆晶裝置之橫截面圖。在圖3之裝置中,一n型摻雜接觸區域8成長於一成長基板20及可選長晶層(未圖示)上,繼之為n型摻雜包覆區域7、活性區域6、p型摻雜包覆區域5及p型摻雜接觸區域3。如圖1A之裝置中,如此項技術中已知,可藉由選擇活性區域6中之該等層之寬度及成份來控制由該活性區域發射之光之波長。一合適活性區域之實例包含由障壁層分隔之3或4個量子阱。n型接觸點10形成於n型摻雜接觸區域8之一經蝕刻而曝露之部分上。p型接觸點9形成於p型摻雜接觸區域3上。n型接觸點10及p型接觸點9兩者均為反射性的,且穿過基板20自該裝置提取光。下表提供適用於層3、5、6、7及8中之每一者之厚度、成份及摻雜物之實例。
上表提供之對於每一層之特徵僅作為實例,而非意欲為限制性的。
如圖1A中描述之實施例中,在圖3中說明之裝置中,高度摻雜層4可形成於p型摻雜接觸區域3、p型摻雜包覆區域5、n型摻雜包覆區域7及n型摻雜接觸區域8的其中之一或多者中。在圖3中說明之裝置中,p型接觸點通常為一在活性區
域6之p型側面上提供充分電流散佈之薄片接觸點。因此,在III族氮化物裝置中,高度摻雜層4通常僅形成於活性區域6之n型側面上。圖3中之高度摻雜層4可為GaN層、四元AlInGaN層,或可為與高度摻雜層4定位於其中之區域具有相同成份之層。如上文結合圖1A之文字中所描述,高度摻雜層可具有相同厚度、相對於活性區域之位置及摻雜濃度。
圖4A及4B說明根據圖1A或圖3之用於一大型連接裝置(即,一具有大於約400×400μm2
之面積之裝置)之接觸點9及10之排列。圖4A為一平面圖,圖4B則為一沿線DD截取之橫截面圖。層19包含圖1A之層1、3、4、5、6、7及8或圖3之層20、7、8、6、5、3及4。活性區域劃分成四個隔離區域,以使p型及n型接觸點間之距離最小化。沈積於一藉由蝕刻而曝露之層上之接觸點(即,圖1A之裝置中之p型接觸點9及圖3之裝置中之n型接觸點10)環繞該等四個區域並插入其中。圖1A之裝置中之n型接觸點10及圖3之裝置中之p型接觸點9形成於該等四個活性區域上。藉由空氣或藉由選用絕緣層22使p型接觸點9與n型接觸點10彼此電隔離。六個基台連接處(submount connection)23及十六個基台連接處24沈積於p型及n型接觸點上,以形成一適用於將裝置連接至一基台之表面。該基台通常為一藉由焊接點附著至該裝置之矽積體電路。在此等實施例中,p型及n型基台連接處可為(例如)可焊接金屬。在其它實施例中,藉由金黏結、冷焊或熱壓黏結將該裝置連接至該基台。
圖5A及5B說明根據圖1A或圖3用於一小型連接裝置
(即,一具有小於約400×400μm2
之面積之裝置)之接觸點9及10之排列。圖5A為一平面圖,圖5B則為一沿線CC截取之橫截面圖。層19包含圖1A之層1、3、4、5、6、7及8或圖3之層20、7、8、6、5、3及4。圖5A及5B中展示之裝置具有一向下蝕刻至活性區域下方之一磊晶結構層之單一通孔21。圖1A之裝置中之p型接觸點9及圖3之裝置中之n型接觸點10沈積於通孔21中。通孔21定位於裝置之中心處,以提供均一的電流及光發射。圖1A之裝置中之n型接觸點10及圖3之裝置中之p型接觸點9環繞該通孔,且提供與磊晶結構之活性區域之另一側之電接觸。藉由一或多個介電層22或藉由空氣將該等p型接觸點與n型接觸點分隔開並電隔離。兩個基台連接處24與一個基台連接處23安置於p型接觸點9及n型接觸點10上。基台連接處23可定位於由絕緣層22圍繞之區域內之任何地方,而無需定位於通孔21之正上方。類似地,基台連接處24可定位於絕緣層22外之區域中之任何地方。因此,裝置與一基台之連接不受p型接觸點9及n型接觸點10之形狀或置放之限制。
圖6為一已封裝之發光裝置之分解圖。一散熱塊100置於一嵌入成型之引線框內。該嵌入成型之引線框為(例如)一環繞提供電路徑之金屬框106而成型之填充之塑膠材料105。塊100可包含一可選反射杯102。可為上文描述之任何裝置之發光裝置晶粒104直接或間接地經由一熱傳導基台103安裝至塊100。可添加一罩蓋108,其可為一光學透鏡。
已詳細描述了本發明,彼等熟習此項技術者將瞭解到:
給出本揭示內容,可在不偏離本文描述之發明性概念之精神之前提下對本發明作出修改。因此,並非意欲將本發明之範疇限制於所說明及描述之具體實施例內。
1‧‧‧透明GaP窗口層
3‧‧‧p型摻雜接觸區域
4‧‧‧高度摻雜層
5‧‧‧p型摻雜包覆區域
6‧‧‧活性區域
7‧‧‧n型摻雜包覆區域
8‧‧‧n型摻雜接觸區域
9‧‧‧p型接觸點
10‧‧‧n型接觸點
9A‧‧‧Au-Zn合金、歐姆層
9B‧‧‧防護金屬層
9C‧‧‧接觸層/反射器
10A‧‧‧Au-Ge合金
10B‧‧‧防護金屬層
10C‧‧‧反射層/反射器
19‧‧‧層
20‧‧‧成長基板
21‧‧‧通孔
22‧‧‧絕緣層/介電層
23、24‧‧‧基台連接處
100‧‧‧散熱塊
102‧‧‧反射杯
103‧‧‧熱傳導基台
104‧‧‧發光裝置晶粒
105‧‧‧填充之塑膠材料
106‧‧‧金屬框
108‧‧‧罩蓋
圖1A為根據本發明之一實施例之一III族磷化物覆晶LED之橫截面圖。
圖1B說明圖1A中說明之裝置之p型接觸點。
圖1C說明圖1A中說明之裝置之n型接觸點。
圖2為本發明之一實施例之一部分之能帶圖。
圖3為根據本發明之一實施例之一III族氮化物覆晶LED之橫截面圖。
圖4A及4B為用於一大型連接覆晶LED之接觸機制之平面圖及橫截面圖。
圖5A及5B為用於一小型連接覆晶LED之接觸機制之平面圖及橫截面圖。
圖6為一已封裝之半導體發光裝置之分解圖。
3‧‧‧p型摻雜接觸區域
4‧‧‧高度摻雜層
5‧‧‧p型摻雜包覆區域
6‧‧‧活性區域
7‧‧‧n型摻雜包覆區域
8‧‧‧n型摻雜接觸區域
9‧‧‧p型接觸點
10‧‧‧n型接觸點
20‧‧‧成長基板
Claims (17)
- 一種半導體發光裝置,包括:一發光區域,其安置於一第一導電類型之包覆(cladding)區域與一第二導電類型之包覆區域之間;一第一導電類型之接觸區域,其鄰近於該第一導電類型之包覆區域;一第二導電類型之接觸區域,其鄰近於該第二導電類型之包覆區域;及至少一高度摻雜層,其安置於該第一導電類型之包覆區域內,其中該高度摻雜層較該第一導電類型之包覆區域更高度地摻雜。
- 如請求項1之裝置,其中該發光區域包括至少一InGaP層。
- 如請求項1之裝置,其中該發光區域包括至少一InGaN層。
- 如請求項1之裝置,進一步包括安置於該第一導電類型之包覆區域內之複數個高度摻雜層。
- 如請求項4之裝置,其中:該等複數個高度摻雜層中之每一高度摻雜層之厚度皆在約10nm與約100nm之間;且該等複數個高度摻雜層由至少10nm之第一導電類型之區域分隔開。
- 如請求項4之裝置,其中該等複數個高度摻雜層之一總厚度在約100nm與約500nm之間。
- 如請求項1之裝置,其中:該第一導電類型之包覆區域具有一在約5×1017 cm-3 與 約1×1018 cm-3 之間之摻雜濃度;且該高度摻雜層具有一在約1×1018 cm-3 與約1×1019 cm-3 之間之摻雜濃度。
- 如請求項1之裝置,其中該高度摻雜層包括(Alx Ga1-x )0.5 In0.5 P,其中0<x1。
- 如請求項8之裝置,其中該高度摻雜層包括(Alx Ga1-x )0.5 In0.5 P,其中0.2<x<0.7。
- 如請求項8之裝置,其中該高度摻雜層包括(Al0.65 Ga0.35 )0.5 In0.5 P。
- 如請求項1之裝置,其中該高度摻雜層包括Alx Iny Gaz N,其中0<x1、0<y1且0<z1。
- 如請求項1之裝置,其中該高度摻雜層包括GaN。
- 如請求項1之裝置,其中該高度摻雜層為一第一高度摻雜層,該裝置進一步包括一安置於該第二導電類型之包覆區域內之第二高度摻雜層,其中該第二高度摻雜層較該第二導電類型之包覆區域更高度地摻雜。
- 如請求項1之裝置,其中該高度摻雜層為一安置於該第一導電類型之包覆區域內之第一高度摻雜層,該裝置進一步包括一安置於該第一導電類型之接觸區域內之第二高度摻雜層,其中該第二高度摻雜層較該第一導電類型之接觸區域更高度地摻雜。
- 如請求項1之裝置,其中該高度摻雜層為一安置於該第一導電類型之包覆區域內之第一高度摻雜層,該裝置進一步包括一安置於該第二導電類型之接觸區域內之第二高 度摻雜層,其中該第二高度摻雜層較該第二導電類型之接觸區域更高度地摻雜。
- 如請求項1之裝置,其中:該第一導電類型之接觸區域係藉由一第一導電類型之包覆區域來與活性區域(active region)間隔開;且該第二導電類型之接觸區域係藉由一第二導電類型之包覆區域來與該活性區域間隔開。
- 如請求項1之裝置,進一步包括:一第一引線(lead),其電連接至該第一導電類型之接觸區域;一第二引線,其電連接至該第二導電類型之接觸區域;及一罩蓋,其安置於該活性區域上。
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US7019330B2 (en) * | 2003-08-28 | 2006-03-28 | Lumileds Lighting U.S., Llc | Resonant cavity light emitting device |
-
2004
- 2004-01-27 US US10/766,277 patent/US7026653B2/en not_active Expired - Lifetime
-
2005
- 2005-01-17 EP EP05100249.1A patent/EP1560275B1/en active Active
- 2005-01-24 TW TW094102019A patent/TWI430468B/zh active
- 2005-01-26 JP JP2005018042A patent/JP2005217406A/ja active Pending
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US7026653B2 (en) | 2006-04-11 |
EP1560275A2 (en) | 2005-08-03 |
TW200537711A (en) | 2005-11-16 |
EP1560275B1 (en) | 2019-03-13 |
EP1560275A3 (en) | 2014-02-26 |
JP2005217406A (ja) | 2005-08-11 |
US20050161679A1 (en) | 2005-07-28 |
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