TWI427668B - A plasma processing device, an electrode temperature adjusting device, and an electrode temperature adjusting method - Google Patents
A plasma processing device, an electrode temperature adjusting device, and an electrode temperature adjusting method Download PDFInfo
- Publication number
- TWI427668B TWI427668B TW097120747A TW97120747A TWI427668B TW I427668 B TWI427668 B TW I427668B TW 097120747 A TW097120747 A TW 097120747A TW 97120747 A TW97120747 A TW 97120747A TW I427668 B TWI427668 B TW I427668B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- temperature
- frequency power
- heat medium
- high frequency
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 186
- 238000000034 method Methods 0.000 title claims description 34
- 239000000758 substrate Substances 0.000 claims description 49
- 230000008569 process Effects 0.000 claims description 26
- 239000003507 refrigerant Substances 0.000 claims description 21
- 238000004364 calculation method Methods 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 8
- YDLQKLWVKKFPII-UHFFFAOYSA-N timiperone Chemical compound C1=CC(F)=CC=C1C(=O)CCCN1CCC(N2C(NC3=CC=CC=C32)=S)CC1 YDLQKLWVKKFPII-UHFFFAOYSA-N 0.000 claims description 6
- 229950000809 timiperone Drugs 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 81
- 235000012431 wafers Nutrition 0.000 description 61
- 239000012267 brine Substances 0.000 description 40
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 40
- 238000005530 etching Methods 0.000 description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 238000001816 cooling Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229940044949 eucalyptus oil Drugs 0.000 description 1
- 239000010642 eucalyptus oil Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J21/00—Vacuum tubes
- H01J21/02—Tubes with a single discharge path
- H01J21/18—Tubes with a single discharge path having magnetic control means; having both magnetic and electrostatic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Automation & Control Theory (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007149585A JP4838197B2 (ja) | 2007-06-05 | 2007-06-05 | プラズマ処理装置，電極温度調整装置，電極温度調整方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200912989A TW200912989A (en) | 2009-03-16 |
| TWI427668B true TWI427668B (zh) | 2014-02-21 |
Family
ID=40180659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097120747A TWI427668B (zh) | 2007-06-05 | 2008-06-04 | A plasma processing device, an electrode temperature adjusting device, and an electrode temperature adjusting method |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8864932B2 (enExample) |
| JP (1) | JP4838197B2 (enExample) |
| KR (1) | KR101011858B1 (enExample) |
| CN (1) | CN101320675B (enExample) |
| TW (1) | TWI427668B (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5519992B2 (ja) * | 2009-10-14 | 2014-06-11 | 東京エレクトロン株式会社 | 基板載置台の温度制御システム及びその温度制御方法 |
| US8889021B2 (en) * | 2010-01-21 | 2014-11-18 | Kla-Tencor Corporation | Process condition sensing device and method for plasma chamber |
| US8916793B2 (en) | 2010-06-08 | 2014-12-23 | Applied Materials, Inc. | Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow |
| US9338871B2 (en) * | 2010-01-29 | 2016-05-10 | Applied Materials, Inc. | Feedforward temperature control for plasma processing apparatus |
| US8880227B2 (en) | 2010-05-27 | 2014-11-04 | Applied Materials, Inc. | Component temperature control by coolant flow control and heater duty cycle control |
| US8591755B2 (en) * | 2010-09-15 | 2013-11-26 | Lam Research Corporation | Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same |
| CN102127757A (zh) * | 2011-01-14 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Mocvd反应系统 |
| JP5712741B2 (ja) * | 2011-03-31 | 2015-05-07 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ処理方法及び記憶媒体 |
| GB2489761B (en) * | 2011-09-07 | 2015-03-04 | Europlasma Nv | Surface coatings |
| US10274270B2 (en) | 2011-10-27 | 2019-04-30 | Applied Materials, Inc. | Dual zone common catch heat exchanger/chiller |
| CN102592986B (zh) * | 2012-03-09 | 2017-03-15 | 上海集成电路研发中心有限公司 | 通孔形成方法 |
| JP2014005494A (ja) * | 2012-06-22 | 2014-01-16 | Ulvac Japan Ltd | プラズマ処理装置 |
| KR101227153B1 (ko) * | 2012-09-05 | 2013-01-31 | (주)테키스트 | 열전소자를 이용한 반도체 제조 설비의 광역 온도제어시스템 |
| US9916967B2 (en) * | 2013-03-13 | 2018-03-13 | Applied Materials, Inc. | Fast response fluid control system |
| CN103617941B (zh) * | 2013-11-14 | 2016-05-25 | 中国科学院等离子体物理研究所 | 一种强流离子源电极的液态金属两级冷却方法 |
| JP6219227B2 (ja) * | 2014-05-12 | 2017-10-25 | 東京エレクトロン株式会社 | ヒータ給電機構及びステージの温度制御方法 |
| JP6219229B2 (ja) * | 2014-05-19 | 2017-10-25 | 東京エレクトロン株式会社 | ヒータ給電機構 |
| JP6525751B2 (ja) * | 2015-06-11 | 2019-06-05 | 東京エレクトロン株式会社 | 温度制御方法及びプラズマ処理装置 |
| CN105097408B (zh) * | 2015-07-21 | 2017-09-26 | 深圳市华星光电技术有限公司 | 一种干法刻蚀机台及其使用方法 |
| CN106803475B (zh) * | 2015-11-26 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | 一种等离子体处理装置 |
| CN105513958A (zh) * | 2015-12-25 | 2016-04-20 | 武汉华星光电技术有限公司 | 一种蚀刻设备及反应槽装置 |
| JP2018063974A (ja) * | 2016-10-11 | 2018-04-19 | 東京エレクトロン株式会社 | 温度制御装置、温度制御方法、および載置台 |
| KR102587615B1 (ko) * | 2016-12-21 | 2023-10-11 | 삼성전자주식회사 | 플라즈마 처리 장치의 온도 조절기 및 이를 포함하는 플라즈마 처리 장치 |
| JP6803815B2 (ja) * | 2017-07-25 | 2020-12-23 | 東京エレクトロン株式会社 | 基板処理装置、及び、基板処理装置の運用方法 |
| JP6920245B2 (ja) * | 2018-04-23 | 2021-08-18 | 東京エレクトロン株式会社 | 温度制御方法 |
| JP7094154B2 (ja) * | 2018-06-13 | 2022-07-01 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| DE102018209730A1 (de) * | 2018-06-15 | 2019-12-19 | Terraplasma Gmbh | Verfahren zum Prüfen einer Elektrodenanordnung zur Erzeugung eines nicht-thermischen Plasmas und Plasmaquelle mit einer solchen Elektrodenanordnung, eingerichtet zur Durchführung eines solchen Verfahrens |
| CN112313457B (zh) * | 2018-07-06 | 2023-05-09 | 开利公司 | 电化学传热系统 |
| CN110139458A (zh) * | 2019-04-02 | 2019-08-16 | 珠海宝丰堂电子科技有限公司 | 一种等离子设备的电极装置及等离子设备 |
| JP6624623B1 (ja) * | 2019-06-26 | 2019-12-25 | 伸和コントロールズ株式会社 | 温度制御装置及び温調装置 |
| WO2021020723A1 (ko) * | 2019-07-26 | 2021-02-04 | 주성엔지니어링(주) | 기판처리장치 및 그의 인터락 방법 |
| CN112786422B (zh) * | 2019-11-08 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 一种聚焦环、等离子体处理器及方法 |
| CN113745082B (zh) * | 2020-05-28 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其加热装置与工作方法 |
| CN114150294A (zh) * | 2020-09-08 | 2022-03-08 | 吕宝源 | 固态金属有机源的集中供给系统 |
| CN114792618B (zh) * | 2022-04-22 | 2025-05-02 | 合肥京东方显示技术有限公司 | 等离子体设备的下电极结构和等离子体设备 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010042594A1 (en) * | 1996-05-13 | 2001-11-22 | Shamouil Shamouilian | Process chamber having improved temperature control |
| US20030049376A1 (en) * | 2001-06-19 | 2003-03-13 | Applied Materials, Inc. | Feedback control of sub-atmospheric chemical vapor deposition processes |
| TW589675B (en) * | 2000-03-06 | 2004-06-01 | Hitachi Ltd | Plasma treatment device and plasma treatment method |
| TWI223340B (en) * | 1999-09-02 | 2004-11-01 | Tokyo Electron Ltd | Plasma processing apparatus |
| TWI241868B (en) * | 2002-02-06 | 2005-10-11 | Matsushita Electric Industrial Co Ltd | Plasma processing method and apparatus |
| US20060037701A1 (en) * | 2004-06-21 | 2006-02-23 | Tokyo Electron Limited | Plasma processing apparatus and method |
| TWI252517B (en) * | 2002-11-20 | 2006-04-01 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
| US20060213763A1 (en) * | 2005-03-25 | 2006-09-28 | Tokyo Electron Limited | Temperature control method and apparatus, and plasma processing apparatus |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03102820A (ja) * | 1989-09-18 | 1991-04-30 | Tokuda Seisakusho Ltd | 真空処理装置 |
| JPH03134187A (ja) * | 1989-10-18 | 1991-06-07 | Hitachi Ltd | エッチング方法および装置 |
| JPH07335570A (ja) * | 1994-06-06 | 1995-12-22 | Anelva Corp | プラズマ処理における基板温度制御方法 |
| JP4456218B2 (ja) * | 2000-03-16 | 2010-04-28 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
| JP2003282532A (ja) * | 2002-03-27 | 2003-10-03 | Seiko Epson Corp | 被処理体の処理方法 |
| JP4493932B2 (ja) * | 2003-05-13 | 2010-06-30 | 東京エレクトロン株式会社 | 上部電極及びプラズマ処理装置 |
| JP4672455B2 (ja) * | 2004-06-21 | 2011-04-20 | 東京エレクトロン株式会社 | プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体 |
| JP4579025B2 (ja) * | 2005-03-25 | 2010-11-10 | 東京エレクトロン株式会社 | 温度調整方法，温度調整装置，プラズマ処理装置 |
-
2007
- 2007-06-05 JP JP2007149585A patent/JP4838197B2/ja active Active
-
2008
- 2008-05-05 US US12/115,115 patent/US8864932B2/en active Active
- 2008-05-27 KR KR1020080049137A patent/KR101011858B1/ko active Active
- 2008-06-04 TW TW097120747A patent/TWI427668B/zh active
- 2008-06-05 CN CN2008100986513A patent/CN101320675B/zh not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010042594A1 (en) * | 1996-05-13 | 2001-11-22 | Shamouil Shamouilian | Process chamber having improved temperature control |
| TWI223340B (en) * | 1999-09-02 | 2004-11-01 | Tokyo Electron Ltd | Plasma processing apparatus |
| TW589675B (en) * | 2000-03-06 | 2004-06-01 | Hitachi Ltd | Plasma treatment device and plasma treatment method |
| US20030049376A1 (en) * | 2001-06-19 | 2003-03-13 | Applied Materials, Inc. | Feedback control of sub-atmospheric chemical vapor deposition processes |
| TWI241868B (en) * | 2002-02-06 | 2005-10-11 | Matsushita Electric Industrial Co Ltd | Plasma processing method and apparatus |
| TWI252517B (en) * | 2002-11-20 | 2006-04-01 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
| US20060037701A1 (en) * | 2004-06-21 | 2006-02-23 | Tokyo Electron Limited | Plasma processing apparatus and method |
| US20060213763A1 (en) * | 2005-03-25 | 2006-09-28 | Tokyo Electron Limited | Temperature control method and apparatus, and plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101011858B1 (ko) | 2011-01-31 |
| US20090044752A1 (en) | 2009-02-19 |
| US8864932B2 (en) | 2014-10-21 |
| JP4838197B2 (ja) | 2011-12-14 |
| TW200912989A (en) | 2009-03-16 |
| KR20080107261A (ko) | 2008-12-10 |
| CN101320675B (zh) | 2010-09-01 |
| JP2008305856A (ja) | 2008-12-18 |
| CN101320675A (zh) | 2008-12-10 |
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