KR101011858B1 - 플라즈마 처리 장치, 전극 온도 조정 장치, 전극 온도 조정방법 - Google Patents

플라즈마 처리 장치, 전극 온도 조정 장치, 전극 온도 조정방법 Download PDF

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KR101011858B1
KR101011858B1 KR1020080049137A KR20080049137A KR101011858B1 KR 101011858 B1 KR101011858 B1 KR 101011858B1 KR 1020080049137 A KR1020080049137 A KR 1020080049137A KR 20080049137 A KR20080049137 A KR 20080049137A KR 101011858 B1 KR101011858 B1 KR 101011858B1
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electrode
temperature
high frequency
frequency power
upper electrode
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KR20080107261A (ko
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마사오 후루야
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/02—Tubes with a single discharge path
    • H01J21/18—Tubes with a single discharge path having magnetic control means; having both magnetic and electrostatic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020080049137A 2007-06-05 2008-05-27 플라즈마 처리 장치, 전극 온도 조정 장치, 전극 온도 조정방법 Active KR101011858B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007149585A JP4838197B2 (ja) 2007-06-05 2007-06-05 プラズマ処理装置，電極温度調整装置，電極温度調整方法
JPJP-P-2007-00149585 2007-06-05

Publications (2)

Publication Number Publication Date
KR20080107261A KR20080107261A (ko) 2008-12-10
KR101011858B1 true KR101011858B1 (ko) 2011-01-31

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KR1020080049137A Active KR101011858B1 (ko) 2007-06-05 2008-05-27 플라즈마 처리 장치, 전극 온도 조정 장치, 전극 온도 조정방법

Country Status (5)

Country Link
US (1) US8864932B2 (enExample)
JP (1) JP4838197B2 (enExample)
KR (1) KR101011858B1 (enExample)
CN (1) CN101320675B (enExample)
TW (1) TWI427668B (enExample)

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JP5519992B2 (ja) * 2009-10-14 2014-06-11 東京エレクトロン株式会社 基板載置台の温度制御システム及びその温度制御方法
US8889021B2 (en) 2010-01-21 2014-11-18 Kla-Tencor Corporation Process condition sensing device and method for plasma chamber
US9338871B2 (en) * 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US8880227B2 (en) * 2010-05-27 2014-11-04 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
US8591755B2 (en) * 2010-09-15 2013-11-26 Lam Research Corporation Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same
CN102127757A (zh) * 2011-01-14 2011-07-20 映瑞光电科技(上海)有限公司 Mocvd反应系统
JP5712741B2 (ja) * 2011-03-31 2015-05-07 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
GB2489761B (en) * 2011-09-07 2015-03-04 Europlasma Nv Surface coatings
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
CN102592986B (zh) * 2012-03-09 2017-03-15 上海集成电路研发中心有限公司 通孔形成方法
JP2014005494A (ja) * 2012-06-22 2014-01-16 Ulvac Japan Ltd プラズマ処理装置
KR101227153B1 (ko) * 2012-09-05 2013-01-31 (주)테키스트 열전소자를 이용한 반도체 제조 설비의 광역 온도제어시스템
US9916967B2 (en) * 2013-03-13 2018-03-13 Applied Materials, Inc. Fast response fluid control system
CN103617941B (zh) * 2013-11-14 2016-05-25 中国科学院等离子体物理研究所 一种强流离子源电极的液态金属两级冷却方法
JP6219227B2 (ja) * 2014-05-12 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構及びステージの温度制御方法
JP6219229B2 (ja) * 2014-05-19 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構
JP6525751B2 (ja) * 2015-06-11 2019-06-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
CN105097408B (zh) * 2015-07-21 2017-09-26 深圳市华星光电技术有限公司 一种干法刻蚀机台及其使用方法
CN106803475B (zh) * 2015-11-26 2019-01-22 中芯国际集成电路制造(上海)有限公司 一种等离子体处理装置
CN105513958A (zh) * 2015-12-25 2016-04-20 武汉华星光电技术有限公司 一种蚀刻设备及反应槽装置
JP2018063974A (ja) * 2016-10-11 2018-04-19 東京エレクトロン株式会社 温度制御装置、温度制御方法、および載置台
KR102587615B1 (ko) 2016-12-21 2023-10-11 삼성전자주식회사 플라즈마 처리 장치의 온도 조절기 및 이를 포함하는 플라즈마 처리 장치
JP6803815B2 (ja) * 2017-07-25 2020-12-23 東京エレクトロン株式会社 基板処理装置、及び、基板処理装置の運用方法
JP6920245B2 (ja) * 2018-04-23 2021-08-18 東京エレクトロン株式会社 温度制御方法
JP7094154B2 (ja) 2018-06-13 2022-07-01 東京エレクトロン株式会社 成膜装置および成膜方法
DE102018209730A1 (de) * 2018-06-15 2019-12-19 Terraplasma Gmbh Verfahren zum Prüfen einer Elektrodenanordnung zur Erzeugung eines nicht-thermischen Plasmas und Plasmaquelle mit einer solchen Elektrodenanordnung, eingerichtet zur Durchführung eines solchen Verfahrens
WO2020009901A1 (en) * 2018-07-06 2020-01-09 Carrier Corporation Electrochemical heat transfer system
CN110139458A (zh) * 2019-04-02 2019-08-16 珠海宝丰堂电子科技有限公司 一种等离子设备的电极装置及等离子设备
JP6624623B1 (ja) * 2019-06-26 2019-12-25 伸和コントロールズ株式会社 温度制御装置及び温調装置
WO2021020723A1 (ko) * 2019-07-26 2021-02-04 주성엔지니어링(주) 기판처리장치 및 그의 인터락 방법
CN112786422B (zh) * 2019-11-08 2024-03-12 中微半导体设备(上海)股份有限公司 一种聚焦环、等离子体处理器及方法
CN113745082B (zh) * 2020-05-28 2023-10-31 中微半导体设备(上海)股份有限公司 等离子体处理装置及其加热装置与工作方法
CN114150294A (zh) * 2020-09-08 2022-03-08 吕宝源 固态金属有机源的集中供给系统
CN114792618B (zh) * 2022-04-22 2025-05-02 合肥京东方显示技术有限公司 等离子体设备的下电极结构和等离子体设备

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JPH07335570A (ja) * 1994-06-06 1995-12-22 Anelva Corp プラズマ処理における基板温度制御方法
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JPH07335570A (ja) * 1994-06-06 1995-12-22 Anelva Corp プラズマ処理における基板温度制御方法
JP2006270017A (ja) 2004-06-21 2006-10-05 Tokyo Electron Ltd プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体
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Also Published As

Publication number Publication date
TWI427668B (zh) 2014-02-21
US20090044752A1 (en) 2009-02-19
JP2008305856A (ja) 2008-12-18
CN101320675B (zh) 2010-09-01
TW200912989A (en) 2009-03-16
KR20080107261A (ko) 2008-12-10
JP4838197B2 (ja) 2011-12-14
US8864932B2 (en) 2014-10-21
CN101320675A (zh) 2008-12-10

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