TWI415171B - 搭配離子源使用之蒸汽傳送系統及用於此系統之汽化器 - Google Patents

搭配離子源使用之蒸汽傳送系統及用於此系統之汽化器 Download PDF

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Publication number
TWI415171B
TWI415171B TW096121252A TW96121252A TWI415171B TW I415171 B TWI415171 B TW I415171B TW 096121252 A TW096121252 A TW 096121252A TW 96121252 A TW96121252 A TW 96121252A TW I415171 B TWI415171 B TW I415171B
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TW
Taiwan
Prior art keywords
flow
interface device
steam
vapor
valve
Prior art date
Application number
TW096121252A
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English (en)
Chinese (zh)
Other versions
TW200832518A (en
Inventor
亞當斯 道格拉斯Ｒ
歐夫德 多洛
哈士奇 湯瑪士Ｎ
Original Assignee
山米奎普公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 山米奎普公司 filed Critical 山米奎普公司
Publication of TW200832518A publication Critical patent/TW200832518A/zh
Application granted granted Critical
Publication of TWI415171B publication Critical patent/TWI415171B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
TW096121252A 2006-06-12 2007-06-12 搭配離子源使用之蒸汽傳送系統及用於此系統之汽化器 TWI415171B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80455506P 2006-06-12 2006-06-12
US86063106P 2006-11-22 2006-11-22

Publications (2)

Publication Number Publication Date
TW200832518A TW200832518A (en) 2008-08-01
TWI415171B true TWI415171B (zh) 2013-11-11

Family

ID=38832757

Family Applications (3)

Application Number Title Priority Date Filing Date
TW096121252A TWI415171B (zh) 2006-06-12 2007-06-12 搭配離子源使用之蒸汽傳送系統及用於此系統之汽化器
TW096121253A TW200823972A (en) 2006-06-12 2007-06-12 Vaporizer
TW096121254A TWI352610B (en) 2006-06-12 2007-06-12 Vapor delivery to devices under vacuum

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW096121253A TW200823972A (en) 2006-06-12 2007-06-12 Vaporizer
TW096121254A TWI352610B (en) 2006-06-12 2007-06-12 Vapor delivery to devices under vacuum

Country Status (7)

Country Link
US (2) US8110815B2 (https=)
EP (3) EP2026889A4 (https=)
JP (3) JP2009540533A (https=)
KR (3) KR20090024703A (https=)
CN (1) CN101979706B (https=)
TW (3) TWI415171B (https=)
WO (4) WO2007146888A2 (https=)

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US8192805B2 (en) * 2007-09-27 2012-06-05 Tel Epion Inc. Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
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JP5368393B2 (ja) * 2010-08-05 2013-12-18 東京エレクトロン株式会社 気化装置、基板処理装置及び塗布現像装置
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CN105702546B (zh) * 2014-11-24 2018-06-26 上海凯世通半导体股份有限公司 采用固态掺杂剂的离子源装置
CN116114916A (zh) * 2015-07-14 2023-05-16 戴纳威普有限责任公司 放热汽化器
US9679745B2 (en) * 2015-10-14 2017-06-13 Varian Semiconductor Equipment Associates, Inc. Controlling an ion beam in a wide beam current operation range
US10221201B2 (en) * 2015-12-31 2019-03-05 Praxair Technology, Inc. Tin-containing dopant compositions, systems and methods for use in ION implantation systems
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JP6801682B2 (ja) * 2018-02-27 2020-12-16 株式会社Sumco 半導体エピタキシャルウェーハの製造方法及び半導体デバイスの製造方法
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Also Published As

Publication number Publication date
EP2026889A4 (en) 2011-09-07
EP2027395A2 (en) 2009-02-25
WO2007149738A2 (en) 2007-12-27
EP2027395A4 (en) 2011-09-07
KR20090024703A (ko) 2009-03-09
TW200823972A (en) 2008-06-01
CN101979706B (zh) 2013-11-06
CN101979706A (zh) 2011-02-23
TW200815077A (en) 2008-04-01
WO2007146942A3 (en) 2008-10-16
WO2007149738A3 (en) 2008-06-19
KR20090024702A (ko) 2009-03-09
JP5421100B2 (ja) 2014-02-19
TW200832518A (en) 2008-08-01
US8110815B2 (en) 2012-02-07
EP2026889A2 (en) 2009-02-25
WO2007146888A2 (en) 2007-12-21
US20090206281A1 (en) 2009-08-20
EP2027592A4 (en) 2011-09-07
JP2009540533A (ja) 2009-11-19
WO2007146904A3 (en) 2008-06-12
JP2009540535A (ja) 2009-11-19
WO2007146942A2 (en) 2007-12-21
WO2007146904A2 (en) 2007-12-21
JP2009540536A (ja) 2009-11-19
US20090179157A1 (en) 2009-07-16
TWI352610B (en) 2011-11-21
KR20090029211A (ko) 2009-03-20
WO2007146888A3 (en) 2008-07-31
EP2027592A2 (en) 2009-02-25

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