TWI413983B - 具側邊及頂部閘控讀取電晶體之變埠增益胞 - Google Patents

具側邊及頂部閘控讀取電晶體之變埠增益胞 Download PDF

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Publication number
TWI413983B
TWI413983B TW095129349A TW95129349A TWI413983B TW I413983 B TWI413983 B TW I413983B TW 095129349 A TW095129349 A TW 095129349A TW 95129349 A TW95129349 A TW 95129349A TW I413983 B TWI413983 B TW I413983B
Authority
TW
Taiwan
Prior art keywords
transistor
gate
memory cell
layer
soi
Prior art date
Application number
TW095129349A
Other languages
English (en)
Chinese (zh)
Other versions
TW200725617A (en
Inventor
曼得門 傑克Ａ.
鄭 肯格歐
戴瓦卡尼 瑞瑪奇恩
瑞登斯 卡爾Ｊ.
王耿
Original Assignee
萬國商業機器公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 萬國商業機器公司 filed Critical 萬國商業機器公司
Publication of TW200725617A publication Critical patent/TW200725617A/zh
Application granted granted Critical
Publication of TWI413983B publication Critical patent/TWI413983B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
TW095129349A 2005-08-24 2006-08-10 具側邊及頂部閘控讀取電晶體之變埠增益胞 TWI413983B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/161,962 US7459743B2 (en) 2005-08-24 2005-08-24 Dual port gain cell with side and top gated read transistor

Publications (2)

Publication Number Publication Date
TW200725617A TW200725617A (en) 2007-07-01
TWI413983B true TWI413983B (zh) 2013-11-01

Family

ID=37771966

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095129349A TWI413983B (zh) 2005-08-24 2006-08-10 具側邊及頂部閘控讀取電晶體之變埠增益胞

Country Status (7)

Country Link
US (2) US7459743B2 (https=)
EP (1) EP1938378B1 (https=)
JP (1) JP5102767B2 (https=)
KR (1) KR101013302B1 (https=)
CN (1) CN101248529B (https=)
TW (1) TWI413983B (https=)
WO (1) WO2007023011A2 (https=)

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CN103463621B (zh) 2006-10-31 2016-01-06 托莱多大学 Src和Src家族激酶的Na+/K+-ATP酶特异性肽抑制剂/激活剂
JP4524699B2 (ja) * 2007-10-17 2010-08-18 ソニー株式会社 表示装置
US20120302630A1 (en) 2009-09-16 2012-11-29 Chinese Academy Of Medical Sciences Na/K-ATPase Ligands, Ouabain Antagonists, Assays and Uses Thereof
KR101752518B1 (ko) 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102480794B1 (ko) * 2009-12-28 2022-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
US8691947B2 (en) 2010-01-13 2014-04-08 The University Of Toledo Materials related to sodium/potassium adenosine triphosphatase and Src
WO2011145738A1 (en) * 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8792284B2 (en) * 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
JP2012256406A (ja) * 2011-04-08 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置、及び当該記憶装置を用いた半導体装置
US9111634B2 (en) 2012-07-13 2015-08-18 Freescale Semiconductor, Inc. Methods and structures for multiport memory devices
KR20140092537A (ko) 2013-01-16 2014-07-24 삼성전자주식회사 메모리 셀 및 이를 포함하는 메모리 장치
JP6516978B2 (ja) 2013-07-17 2019-05-22 株式会社半導体エネルギー研究所 半導体装置
WO2015047233A1 (en) * 2013-09-25 2015-04-02 Intel Corporation Methods of forming buried vertical capacitors and structures formed thereby
KR102168652B1 (ko) 2013-12-16 2020-10-23 삼성전자주식회사 감지 증폭기, 그것을 포함하는 반도체 메모리 장치 및 그것의 읽기 방법
WO2017111798A1 (en) * 2015-12-23 2017-06-29 Intel Corporation High retention time memory element with dual gate devices
WO2018174874A1 (en) * 2017-03-22 2018-09-27 Intel Corporation Embedded memory employing self-aligned top-gated thin film transistors
CN113692646B (zh) * 2018-12-26 2024-08-23 美光科技公司 具有共享读取/写入位线的垂直3d单字线增益单元
CN119769185B (zh) * 2022-09-20 2026-01-09 华为技术有限公司 一种三维存储阵列、存储器及电子设备
CN118678660A (zh) * 2023-03-17 2024-09-20 华为技术有限公司 三维存储阵列、存储器及电子设备

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US4763181A (en) * 1986-12-08 1988-08-09 Motorola, Inc. High density non-charge-sensing DRAM cell
US5220530A (en) * 1990-08-07 1993-06-15 Oki Electric Industry Co., Ltd. Semiconductor memory element and method of fabricating the same
US5675160A (en) * 1995-03-15 1997-10-07 Nec Corporation Semiconductor memory device having an internal amplification function
US5732014A (en) * 1997-02-20 1998-03-24 Micron Technology, Inc. Merged transistor structure for gain memory cell
JP2001230329A (ja) * 2000-02-16 2001-08-24 Sony Corp 半導体記憶装置
US6314017B1 (en) * 1999-07-22 2001-11-06 Sony Corporation Semiconductor memory device
US20040023473A1 (en) * 2002-07-30 2004-02-05 International Business Machines Corporation METHOD OF FABRICATING A PATTERNED SOI EMBEDDED DRAM/eDRAM HAVING A VERTICAL DEVICE CELL AND DEVICE FORMED THEREBY
US6804142B2 (en) * 2002-11-12 2004-10-12 Micron Technology, Inc. 6F2 3-transistor DRAM gain cell

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JPH01307256A (ja) * 1988-06-06 1989-12-12 Hitachi Ltd 半導体記憶装置
JP3227917B2 (ja) 1993-07-26 2001-11-12 ソニー株式会社 増幅型ｄｒａｍ用メモリセルおよびその製造方法
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US7232719B2 (en) * 2005-03-28 2007-06-19 Promos Technologies Inc. Memories having a charge storage node at least partially located in a trench in a semiconductor substrate and electrically coupled to a source/drain region formed in the substrate
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US4763181A (en) * 1986-12-08 1988-08-09 Motorola, Inc. High density non-charge-sensing DRAM cell
US5220530A (en) * 1990-08-07 1993-06-15 Oki Electric Industry Co., Ltd. Semiconductor memory element and method of fabricating the same
US5675160A (en) * 1995-03-15 1997-10-07 Nec Corporation Semiconductor memory device having an internal amplification function
US5732014A (en) * 1997-02-20 1998-03-24 Micron Technology, Inc. Merged transistor structure for gain memory cell
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JP2001230329A (ja) * 2000-02-16 2001-08-24 Sony Corp 半導体記憶装置
US20040023473A1 (en) * 2002-07-30 2004-02-05 International Business Machines Corporation METHOD OF FABRICATING A PATTERNED SOI EMBEDDED DRAM/eDRAM HAVING A VERTICAL DEVICE CELL AND DEVICE FORMED THEREBY
US6804142B2 (en) * 2002-11-12 2004-10-12 Micron Technology, Inc. 6F2 3-transistor DRAM gain cell

Also Published As

Publication number Publication date
CN101248529A (zh) 2008-08-20
WO2007023011A2 (en) 2007-03-01
TW200725617A (en) 2007-07-01
US20070047293A1 (en) 2007-03-01
WO2007023011B1 (en) 2007-07-12
US7459743B2 (en) 2008-12-02
EP1938378A2 (en) 2008-07-02
US7790530B2 (en) 2010-09-07
CN101248529B (zh) 2010-05-19
US20090047756A1 (en) 2009-02-19
EP1938378B1 (en) 2013-03-20
JP5102767B2 (ja) 2012-12-19
WO2007023011A3 (en) 2007-06-21
KR101013302B1 (ko) 2011-02-09
KR20080036202A (ko) 2008-04-25
JP2009506526A (ja) 2009-02-12

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