TWI413853B - 用於微蝕印投影曝光設備的照明系統、投影曝光設備及其操作方法、微結構元件及其製造方法、及照射遮罩的方法 - Google Patents
用於微蝕印投影曝光設備的照明系統、投影曝光設備及其操作方法、微結構元件及其製造方法、及照射遮罩的方法 Download PDFInfo
- Publication number
- TWI413853B TWI413853B TW094123614A TW94123614A TWI413853B TW I413853 B TWI413853 B TW I413853B TW 094123614 A TW094123614 A TW 094123614A TW 94123614 A TW94123614 A TW 94123614A TW I413853 B TWI413853 B TW I413853B
- Authority
- TW
- Taiwan
- Prior art keywords
- polarization
- light
- illumination system
- manipulator
- exposure apparatus
- Prior art date
Links
- 238000005286 illumination Methods 0.000 title claims abstract description 163
- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title description 4
- 230000010287 polarization Effects 0.000 claims abstract description 543
- 230000003287 optical effect Effects 0.000 claims abstract description 161
- 230000005684 electric field Effects 0.000 claims abstract description 29
- 239000013078 crystal Substances 0.000 claims description 37
- 230000008859 change Effects 0.000 claims description 27
- 239000004973 liquid crystal related substance Substances 0.000 claims description 20
- 230000000694 effects Effects 0.000 claims description 18
- 210000001747 pupil Anatomy 0.000 claims description 18
- 239000011149 active material Substances 0.000 claims description 7
- 230000010355 oscillation Effects 0.000 claims description 4
- 229940125730 polarisation modulator Drugs 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 2
- 101000644712 Arabidopsis thaliana Ubiquitin-conjugating enzyme 15 Proteins 0.000 abstract description 7
- 230000001939 inductive effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 28
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 101100463348 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) PEA2 gene Proteins 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 7
- 230000006698 induction Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- 102100039578 ETS translocation variant 4 Human genes 0.000 description 4
- 101000813747 Homo sapiens ETS translocation variant 4 Proteins 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 101100223916 Drosophila melanogaster pea gene Proteins 0.000 description 1
- 101100202725 Escherichia coli (strain K12) secA gene Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001447 compensatory effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polarising Elements (AREA)
- Microscoopes, Condenser (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US59198504P | 2004-07-29 | 2004-07-29 | |
| US63156404P | 2004-11-29 | 2004-11-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200611063A TW200611063A (en) | 2006-04-01 |
| TWI413853B true TWI413853B (zh) | 2013-11-01 |
Family
ID=35241233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094123614A TWI413853B (zh) | 2004-07-29 | 2005-07-12 | 用於微蝕印投影曝光設備的照明系統、投影曝光設備及其操作方法、微結構元件及其製造方法、及照射遮罩的方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20060055909A1 (https=) |
| EP (1) | EP1621930A3 (https=) |
| JP (1) | JP4795745B2 (https=) |
| KR (1) | KR101212921B1 (https=) |
| TW (1) | TWI413853B (https=) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2157480B1 (en) | 2003-04-09 | 2015-05-27 | Nikon Corporation | Exposure method and apparatus, and device manufacturing method |
| JP4323903B2 (ja) * | 2003-09-12 | 2009-09-02 | キヤノン株式会社 | 照明光学系及びそれを用いた露光装置 |
| TWI360158B (en) | 2003-10-28 | 2012-03-11 | Nikon Corp | Projection exposure device,exposure method and dev |
| TWI385414B (zh) * | 2003-11-20 | 2013-02-11 | 尼康股份有限公司 | 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法 |
| TWI609410B (zh) * | 2004-02-06 | 2017-12-21 | 尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法以及元件製造方法 |
| US20060204204A1 (en) * | 2004-12-20 | 2006-09-14 | Markus Zenzinger | Method for improving the optical polarization properties of a microlithographic projection exposure apparatus |
| TW200923418A (en) * | 2005-01-21 | 2009-06-01 | Nikon Corp | Exposure device, exposure method, fabricating method of device, exposure system, information collecting device, and measuring device |
| WO2006084479A1 (en) * | 2005-02-12 | 2006-08-17 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus |
| DE102006031807A1 (de) * | 2005-07-12 | 2007-01-18 | Carl Zeiss Smt Ag | Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage, sowie Depolarisator |
| KR100835495B1 (ko) | 2006-05-12 | 2008-06-04 | 주식회사 하이닉스반도체 | 반도체 소자의 노광 장비 및 노광 방법 |
| TWI439815B (zh) | 2006-07-03 | 2014-06-01 | Zeiss Carl Smt Gmbh | 校正／修復微影投影曝光裝置中之投影物鏡的方法與此投影物鏡 |
| DE102006038643B4 (de) * | 2006-08-17 | 2009-06-10 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren |
| DE102007042047A1 (de) * | 2006-09-06 | 2008-03-27 | Carl Zeiss Smt Ag | Teilsystem einer Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage |
| DE102006050653A1 (de) * | 2006-10-24 | 2008-04-30 | Carl Zeiss Smt Ag | Verfahren und Vorrichtung zum stoffschlüssigen Verbinden eines optischen Elementes mit einer Fassung |
| CN101548240B (zh) | 2006-12-01 | 2014-09-17 | 卡尔蔡司Smt有限责任公司 | 具有用于减小像差的可替换、可操纵的校正布置的光学系统 |
| DE102007009867A1 (de) * | 2007-02-28 | 2008-09-11 | Carl Zeiss Smt Ag | Abbildungsvorrichtung mit auswechselbaren Blenden sowie Verfahren hierzu |
| DE102007031691A1 (de) | 2007-07-06 | 2009-01-08 | Carl Zeiss Smt Ag | Verfahren zum Betreiben einer Mikrolithographischen Projektionsbelichtunganlagen |
| US8077388B2 (en) * | 2007-09-13 | 2011-12-13 | University Of Utah Research Foundation | Light polarization converter for converting linearly polarized light into radially polarized light and related methods |
| DE102007055567A1 (de) * | 2007-11-20 | 2009-05-28 | Carl Zeiss Smt Ag | Optisches System |
| DE102008009601A1 (de) * | 2008-02-15 | 2009-08-20 | Carl Zeiss Smt Ag | Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren |
| EP2202580B1 (en) * | 2008-12-23 | 2011-06-22 | Carl Zeiss SMT GmbH | Illumination system of a microlithographic projection exposure apparatus |
| US20110037962A1 (en) * | 2009-08-17 | 2011-02-17 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
| JP5531518B2 (ja) * | 2009-09-08 | 2014-06-25 | 株式会社ニコン | 偏光変換ユニット、照明光学系、露光装置、およびデバイス製造方法 |
| NL2005738A (en) * | 2009-12-15 | 2011-06-16 | Asml Holding Nv | Improved polarization designs for lithographic apparatus. |
| DE102009055184B4 (de) | 2009-12-22 | 2011-11-10 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage |
| US20110205519A1 (en) * | 2010-02-25 | 2011-08-25 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
| US9389519B2 (en) * | 2010-02-25 | 2016-07-12 | Nikon Corporation | Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method |
| NL2006196A (en) * | 2010-03-12 | 2011-09-13 | Asml Netherlands Bv | Lithographic apparatus and method. |
| WO2012041339A1 (en) * | 2010-09-28 | 2012-04-05 | Carl Zeiss Smt Gmbh | Optical system of a microlithographic projection exposure apparatus and method of reducing image placement errors |
| US8654332B2 (en) * | 2011-06-22 | 2014-02-18 | Teledyne Scientific & Imaging, Llc | Chip-scale optics module for optical interrogators |
| DE102012206151A1 (de) | 2012-04-16 | 2013-05-02 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage |
| DE102012206150B9 (de) | 2012-04-16 | 2014-06-12 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage |
| DE102012206287A1 (de) | 2012-04-17 | 2013-10-17 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage |
| DE102012212864A1 (de) | 2012-07-23 | 2013-08-22 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage |
| DE102012223230A1 (de) | 2012-12-14 | 2014-02-13 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage |
| DE102023210859A1 (de) * | 2023-11-02 | 2025-05-08 | Carl Zeiss Smt Gmbh | Projektionssystem mit minimierten thermisch induzierten oszillierenden Aberrationen |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6285443B1 (en) * | 1993-12-13 | 2001-09-04 | Carl-Zeiss-Stiftung | Illuminating arrangement for a projection microlithographic apparatus |
| US6483573B1 (en) * | 1999-05-11 | 2002-11-19 | Carl-Zeiss-Stiftung | Projection exposure system and an exposure method in microlithography |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2569711B2 (ja) * | 1988-04-07 | 1997-01-08 | 株式会社ニコン | 露光制御装置及び該装置による露光方法 |
| US5233460A (en) | 1992-01-31 | 1993-08-03 | Regents Of The University Of California | Method and means for reducing speckle in coherent laser pulses |
| US5442184A (en) | 1993-12-10 | 1995-08-15 | Texas Instruments Incorporated | System and method for semiconductor processing using polarized radiant energy |
| EP0658811B1 (de) * | 1993-12-13 | 1998-06-17 | Carl Zeiss | Beleuchtungseinrichtung für eine Projektions-Mikrolithographie-Belichtungsanlage |
| DE19520563A1 (de) * | 1995-06-06 | 1996-12-12 | Zeiss Carl Fa | Beleuchtungseinrichtung für ein Projektions-Mikrolithographie-Gerät |
| US5815247A (en) * | 1995-09-21 | 1998-09-29 | Siemens Aktiengesellschaft | Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures |
| DE19535392A1 (de) * | 1995-09-23 | 1997-03-27 | Zeiss Carl Fa | Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit |
| US6392890B1 (en) | 2000-12-20 | 2002-05-21 | Nortel Networks Limited | Method and device for heat dissipation in an electronics system |
| TW200412617A (en) * | 2002-12-03 | 2004-07-16 | Nikon Corp | Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method |
| KR101119723B1 (ko) * | 2003-09-26 | 2012-03-23 | 칼 짜이스 에스엠티 게엠베하 | 마이크로 리소그래피 투영 노광 |
| US6970233B2 (en) * | 2003-12-03 | 2005-11-29 | Texas Instruments Incorporated | System and method for custom-polarized photolithography illumination |
| JP4497968B2 (ja) * | 2004-03-18 | 2010-07-07 | キヤノン株式会社 | 照明装置、露光装置及びデバイス製造方法 |
-
2005
- 2005-06-29 EP EP05014065A patent/EP1621930A3/en not_active Withdrawn
- 2005-07-12 TW TW094123614A patent/TWI413853B/zh not_active IP Right Cessation
- 2005-07-27 KR KR1020050068360A patent/KR101212921B1/ko not_active Expired - Fee Related
- 2005-07-29 US US11/191,925 patent/US20060055909A1/en not_active Abandoned
- 2005-07-29 JP JP2005221109A patent/JP4795745B2/ja not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6285443B1 (en) * | 1993-12-13 | 2001-09-04 | Carl-Zeiss-Stiftung | Illuminating arrangement for a projection microlithographic apparatus |
| US6483573B1 (en) * | 1999-05-11 | 2002-11-19 | Carl-Zeiss-Stiftung | Projection exposure system and an exposure method in microlithography |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006041540A (ja) | 2006-02-09 |
| US20060055909A1 (en) | 2006-03-16 |
| EP1621930A2 (en) | 2006-02-01 |
| EP1621930A3 (en) | 2011-07-06 |
| KR20060048810A (ko) | 2006-05-18 |
| JP4795745B2 (ja) | 2011-10-19 |
| KR101212921B1 (ko) | 2012-12-14 |
| TW200611063A (en) | 2006-04-01 |
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Legal Events
| Date | Code | Title | Description |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |