JP4795745B2 - マイクロリソグラフィ用投影露光装置のための照明システム - Google Patents

マイクロリソグラフィ用投影露光装置のための照明システム Download PDF

Info

Publication number
JP4795745B2
JP4795745B2 JP2005221109A JP2005221109A JP4795745B2 JP 4795745 B2 JP4795745 B2 JP 4795745B2 JP 2005221109 A JP2005221109 A JP 2005221109A JP 2005221109 A JP2005221109 A JP 2005221109A JP 4795745 B2 JP4795745 B2 JP 4795745B2
Authority
JP
Japan
Prior art keywords
polarization
manipulator
polarization manipulator
light
illumination system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005221109A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006041540A (ja
JP2006041540A5 (https=
Inventor
ダミアン・フィオルカ
ラルフ・リンドナー
ラルフ・シャーンウェバー
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by カール・ツァイス・エスエムティー・ゲーエムベーハー filed Critical カール・ツァイス・エスエムティー・ゲーエムベーハー
Publication of JP2006041540A publication Critical patent/JP2006041540A/ja
Publication of JP2006041540A5 publication Critical patent/JP2006041540A5/ja
Application granted granted Critical
Publication of JP4795745B2 publication Critical patent/JP4795745B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polarising Elements (AREA)
  • Microscoopes, Condenser (AREA)
JP2005221109A 2004-07-29 2005-07-29 マイクロリソグラフィ用投影露光装置のための照明システム Expired - Fee Related JP4795745B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US59198504P 2004-07-29 2004-07-29
US60/591,985 2004-07-29
US63156404P 2004-11-29 2004-11-29
US60/631,564 2004-11-29

Publications (3)

Publication Number Publication Date
JP2006041540A JP2006041540A (ja) 2006-02-09
JP2006041540A5 JP2006041540A5 (https=) 2008-09-04
JP4795745B2 true JP4795745B2 (ja) 2011-10-19

Family

ID=35241233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005221109A Expired - Fee Related JP4795745B2 (ja) 2004-07-29 2005-07-29 マイクロリソグラフィ用投影露光装置のための照明システム

Country Status (5)

Country Link
US (1) US20060055909A1 (https=)
EP (1) EP1621930A3 (https=)
JP (1) JP4795745B2 (https=)
KR (1) KR101212921B1 (https=)
TW (1) TWI413853B (https=)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2157480B1 (en) 2003-04-09 2015-05-27 Nikon Corporation Exposure method and apparatus, and device manufacturing method
JP4323903B2 (ja) * 2003-09-12 2009-09-02 キヤノン株式会社 照明光学系及びそれを用いた露光装置
TWI360158B (en) 2003-10-28 2012-03-11 Nikon Corp Projection exposure device,exposure method and dev
TWI385414B (zh) * 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
TWI609410B (zh) * 2004-02-06 2017-12-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
US20060204204A1 (en) * 2004-12-20 2006-09-14 Markus Zenzinger Method for improving the optical polarization properties of a microlithographic projection exposure apparatus
TW200923418A (en) * 2005-01-21 2009-06-01 Nikon Corp Exposure device, exposure method, fabricating method of device, exposure system, information collecting device, and measuring device
WO2006084479A1 (en) * 2005-02-12 2006-08-17 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
DE102006031807A1 (de) * 2005-07-12 2007-01-18 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage, sowie Depolarisator
KR100835495B1 (ko) 2006-05-12 2008-06-04 주식회사 하이닉스반도체 반도체 소자의 노광 장비 및 노광 방법
TWI439815B (zh) 2006-07-03 2014-06-01 Zeiss Carl Smt Gmbh 校正／修復微影投影曝光裝置中之投影物鏡的方法與此投影物鏡
DE102006038643B4 (de) * 2006-08-17 2009-06-10 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102007042047A1 (de) * 2006-09-06 2008-03-27 Carl Zeiss Smt Ag Teilsystem einer Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
DE102006050653A1 (de) * 2006-10-24 2008-04-30 Carl Zeiss Smt Ag Verfahren und Vorrichtung zum stoffschlüssigen Verbinden eines optischen Elementes mit einer Fassung
CN101548240B (zh) 2006-12-01 2014-09-17 卡尔蔡司Smt有限责任公司 具有用于减小像差的可替换、可操纵的校正布置的光学系统
DE102007009867A1 (de) * 2007-02-28 2008-09-11 Carl Zeiss Smt Ag Abbildungsvorrichtung mit auswechselbaren Blenden sowie Verfahren hierzu
DE102007031691A1 (de) 2007-07-06 2009-01-08 Carl Zeiss Smt Ag Verfahren zum Betreiben einer Mikrolithographischen Projektionsbelichtunganlagen
US8077388B2 (en) * 2007-09-13 2011-12-13 University Of Utah Research Foundation Light polarization converter for converting linearly polarized light into radially polarized light and related methods
DE102007055567A1 (de) * 2007-11-20 2009-05-28 Carl Zeiss Smt Ag Optisches System
DE102008009601A1 (de) * 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
EP2202580B1 (en) * 2008-12-23 2011-06-22 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
US20110037962A1 (en) * 2009-08-17 2011-02-17 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
JP5531518B2 (ja) * 2009-09-08 2014-06-25 株式会社ニコン 偏光変換ユニット、照明光学系、露光装置、およびデバイス製造方法
NL2005738A (en) * 2009-12-15 2011-06-16 Asml Holding Nv Improved polarization designs for lithographic apparatus.
DE102009055184B4 (de) 2009-12-22 2011-11-10 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
US20110205519A1 (en) * 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
US9389519B2 (en) * 2010-02-25 2016-07-12 Nikon Corporation Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method
NL2006196A (en) * 2010-03-12 2011-09-13 Asml Netherlands Bv Lithographic apparatus and method.
WO2012041339A1 (en) * 2010-09-28 2012-04-05 Carl Zeiss Smt Gmbh Optical system of a microlithographic projection exposure apparatus and method of reducing image placement errors
US8654332B2 (en) * 2011-06-22 2014-02-18 Teledyne Scientific & Imaging, Llc Chip-scale optics module for optical interrogators
DE102012206151A1 (de) 2012-04-16 2013-05-02 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012206150B9 (de) 2012-04-16 2014-06-12 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012206287A1 (de) 2012-04-17 2013-10-17 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012212864A1 (de) 2012-07-23 2013-08-22 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012223230A1 (de) 2012-12-14 2014-02-13 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102023210859A1 (de) * 2023-11-02 2025-05-08 Carl Zeiss Smt Gmbh Projektionssystem mit minimierten thermisch induzierten oszillierenden Aberrationen

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2569711B2 (ja) * 1988-04-07 1997-01-08 株式会社ニコン 露光制御装置及び該装置による露光方法
US5233460A (en) 1992-01-31 1993-08-03 Regents Of The University Of California Method and means for reducing speckle in coherent laser pulses
US5442184A (en) 1993-12-10 1995-08-15 Texas Instruments Incorporated System and method for semiconductor processing using polarized radiant energy
US6285443B1 (en) 1993-12-13 2001-09-04 Carl-Zeiss-Stiftung Illuminating arrangement for a projection microlithographic apparatus
EP0658811B1 (de) * 1993-12-13 1998-06-17 Carl Zeiss Beleuchtungseinrichtung für eine Projektions-Mikrolithographie-Belichtungsanlage
DE19520563A1 (de) * 1995-06-06 1996-12-12 Zeiss Carl Fa Beleuchtungseinrichtung für ein Projektions-Mikrolithographie-Gerät
US5815247A (en) * 1995-09-21 1998-09-29 Siemens Aktiengesellschaft Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures
DE19535392A1 (de) * 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
DE19921795A1 (de) 1999-05-11 2000-11-23 Zeiss Carl Fa Projektions-Belichtungsanlage und Belichtungsverfahren der Mikrolithographie
US6392890B1 (en) 2000-12-20 2002-05-21 Nortel Networks Limited Method and device for heat dissipation in an electronics system
TW200412617A (en) * 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
KR101119723B1 (ko) * 2003-09-26 2012-03-23 칼 짜이스 에스엠티 게엠베하 마이크로 리소그래피 투영 노광
US6970233B2 (en) * 2003-12-03 2005-11-29 Texas Instruments Incorporated System and method for custom-polarized photolithography illumination
JP4497968B2 (ja) * 2004-03-18 2010-07-07 キヤノン株式会社 照明装置、露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
JP2006041540A (ja) 2006-02-09
TWI413853B (zh) 2013-11-01
US20060055909A1 (en) 2006-03-16
EP1621930A2 (en) 2006-02-01
EP1621930A3 (en) 2011-07-06
KR20060048810A (ko) 2006-05-18
KR101212921B1 (ko) 2012-12-14
TW200611063A (en) 2006-04-01

Similar Documents

Publication Publication Date Title
JP4795745B2 (ja) マイクロリソグラフィ用投影露光装置のための照明システム
KR100812741B1 (ko) 리소그래피 장치 내의 편광된 방사선 및 디바이스 제조방법
KR101491229B1 (ko) 마이크로리소그래픽 투영 노광 장치의 광학 시스템
JP5991600B2 (ja) 光学システム、特にマイクロリソグラフィ投影露光装置の照明システム又は投影対物器械
TW452677B (en) Projection exposure system and an exposure method in microlithography
US8035803B2 (en) Subsystem of an illumination system of a microlithographic projection exposure apparatus
TW201432789A (zh) 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
KR101074995B1 (ko) 마이크로리소그래피 투영 노광 장치의 광학계
KR20140069152A (ko) 조명 광학 장치, 광학계 유닛, 조명 방법, 및 노광 방법 및 장치
JP5319766B2 (ja) マイクロリソグラフィ投影露光装置の光学系及びマイクロリソグラフィ露光方法
WO2005010963A1 (ja) 照明光学装置、露光装置および露光方法
US8437058B2 (en) Computer generated hologram and exposure apparatus to suppress an illumination variation and loss in light
JP5566501B2 (ja) 特にマイクロリソグラフィ投影露光装置の光学系
JP2009027162A (ja) マイクロリソグラフィック投影露光装置
JP2016186642A (ja) 特にマイクロリソグラフィ投影露光装置における偏光影響光学配置
JP5846471B2 (ja) 偏光影響光学装置及びマイクロリソグラフィ投影露光装置の光学系
JP4896919B2 (ja) リソグラフィ装置およびデバイス製造方法
JP5928653B2 (ja) マイクロリソグラフィ投影露光装置の光学系
JP5369319B2 (ja) マイクロリソグラフィ投影露光装置の照明システム
WO2013042679A1 (ja) 照明光学装置、光学系ユニット、照明方法、並びに露光方法及び装置
US9588433B2 (en) Optical system, in particular of a microlithographic projection exposure apparatus
KR20150092285A (ko) 마이크로리소그래픽 투영 노광 장치의 광학 시스템

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20080709

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20080709

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20080716

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20080716

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080723

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080723

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110221

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110523

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110526

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110621

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110719

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110728

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140805

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees