KR101212921B1 - 마이크로리소그래픽 투영 노광 장치용 조명 시스템 - Google Patents

마이크로리소그래픽 투영 노광 장치용 조명 시스템 Download PDF

Info

Publication number
KR101212921B1
KR101212921B1 KR1020050068360A KR20050068360A KR101212921B1 KR 101212921 B1 KR101212921 B1 KR 101212921B1 KR 1020050068360 A KR1020050068360 A KR 1020050068360A KR 20050068360 A KR20050068360 A KR 20050068360A KR 101212921 B1 KR101212921 B1 KR 101212921B1
Authority
KR
South Korea
Prior art keywords
polarization
illumination system
exposure apparatus
delete delete
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020050068360A
Other languages
English (en)
Korean (ko)
Other versions
KR20060048810A (ko
Inventor
다미안 피올카
랄프 린트너
랄프 샤른베버
Original Assignee
칼 짜이스 에스엠티 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 짜이스 에스엠티 게엠베하 filed Critical 칼 짜이스 에스엠티 게엠베하
Publication of KR20060048810A publication Critical patent/KR20060048810A/ko
Application granted granted Critical
Publication of KR101212921B1 publication Critical patent/KR101212921B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polarising Elements (AREA)
  • Microscoopes, Condenser (AREA)
KR1020050068360A 2004-07-29 2005-07-27 마이크로리소그래픽 투영 노광 장치용 조명 시스템 Expired - Fee Related KR101212921B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US59198504P 2004-07-29 2004-07-29
US60/591,985 2004-07-29
US63156404P 2004-11-29 2004-11-29
US60/631,564 2004-11-29

Publications (2)

Publication Number Publication Date
KR20060048810A KR20060048810A (ko) 2006-05-18
KR101212921B1 true KR101212921B1 (ko) 2012-12-14

Family

ID=35241233

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050068360A Expired - Fee Related KR101212921B1 (ko) 2004-07-29 2005-07-27 마이크로리소그래픽 투영 노광 장치용 조명 시스템

Country Status (5)

Country Link
US (1) US20060055909A1 (https=)
EP (1) EP1621930A3 (https=)
JP (1) JP4795745B2 (https=)
KR (1) KR101212921B1 (https=)
TW (1) TWI413853B (https=)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2157480B1 (en) 2003-04-09 2015-05-27 Nikon Corporation Exposure method and apparatus, and device manufacturing method
JP4323903B2 (ja) * 2003-09-12 2009-09-02 キヤノン株式会社 照明光学系及びそれを用いた露光装置
TWI360158B (en) 2003-10-28 2012-03-11 Nikon Corp Projection exposure device,exposure method and dev
TWI385414B (zh) * 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
TWI609410B (zh) * 2004-02-06 2017-12-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
US20060204204A1 (en) * 2004-12-20 2006-09-14 Markus Zenzinger Method for improving the optical polarization properties of a microlithographic projection exposure apparatus
TW200923418A (en) * 2005-01-21 2009-06-01 Nikon Corp Exposure device, exposure method, fabricating method of device, exposure system, information collecting device, and measuring device
WO2006084479A1 (en) * 2005-02-12 2006-08-17 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
DE102006031807A1 (de) * 2005-07-12 2007-01-18 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage, sowie Depolarisator
KR100835495B1 (ko) 2006-05-12 2008-06-04 주식회사 하이닉스반도체 반도체 소자의 노광 장비 및 노광 방법
TWI439815B (zh) 2006-07-03 2014-06-01 Zeiss Carl Smt Gmbh 校正／修復微影投影曝光裝置中之投影物鏡的方法與此投影物鏡
DE102006038643B4 (de) * 2006-08-17 2009-06-10 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102007042047A1 (de) * 2006-09-06 2008-03-27 Carl Zeiss Smt Ag Teilsystem einer Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
DE102006050653A1 (de) * 2006-10-24 2008-04-30 Carl Zeiss Smt Ag Verfahren und Vorrichtung zum stoffschlüssigen Verbinden eines optischen Elementes mit einer Fassung
CN101548240B (zh) 2006-12-01 2014-09-17 卡尔蔡司Smt有限责任公司 具有用于减小像差的可替换、可操纵的校正布置的光学系统
DE102007009867A1 (de) * 2007-02-28 2008-09-11 Carl Zeiss Smt Ag Abbildungsvorrichtung mit auswechselbaren Blenden sowie Verfahren hierzu
DE102007031691A1 (de) 2007-07-06 2009-01-08 Carl Zeiss Smt Ag Verfahren zum Betreiben einer Mikrolithographischen Projektionsbelichtunganlagen
US8077388B2 (en) * 2007-09-13 2011-12-13 University Of Utah Research Foundation Light polarization converter for converting linearly polarized light into radially polarized light and related methods
DE102007055567A1 (de) * 2007-11-20 2009-05-28 Carl Zeiss Smt Ag Optisches System
DE102008009601A1 (de) * 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
EP2202580B1 (en) * 2008-12-23 2011-06-22 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
US20110037962A1 (en) * 2009-08-17 2011-02-17 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
JP5531518B2 (ja) * 2009-09-08 2014-06-25 株式会社ニコン 偏光変換ユニット、照明光学系、露光装置、およびデバイス製造方法
NL2005738A (en) * 2009-12-15 2011-06-16 Asml Holding Nv Improved polarization designs for lithographic apparatus.
DE102009055184B4 (de) 2009-12-22 2011-11-10 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
US20110205519A1 (en) * 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
US9389519B2 (en) * 2010-02-25 2016-07-12 Nikon Corporation Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method
NL2006196A (en) * 2010-03-12 2011-09-13 Asml Netherlands Bv Lithographic apparatus and method.
WO2012041339A1 (en) * 2010-09-28 2012-04-05 Carl Zeiss Smt Gmbh Optical system of a microlithographic projection exposure apparatus and method of reducing image placement errors
US8654332B2 (en) * 2011-06-22 2014-02-18 Teledyne Scientific & Imaging, Llc Chip-scale optics module for optical interrogators
DE102012206151A1 (de) 2012-04-16 2013-05-02 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012206150B9 (de) 2012-04-16 2014-06-12 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012206287A1 (de) 2012-04-17 2013-10-17 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012212864A1 (de) 2012-07-23 2013-08-22 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012223230A1 (de) 2012-12-14 2014-02-13 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102023210859A1 (de) * 2023-11-02 2025-05-08 Carl Zeiss Smt Gmbh Projektionssystem mit minimierten thermisch induzierten oszillierenden Aberrationen

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000323403A (ja) 1999-05-11 2000-11-24 Carl Zeiss Stiftung Trading As Carl Zeiss マイクロリソグラフにおける投影露光装置および露光方法
US6191880B1 (en) 1995-09-23 2001-02-20 Carl-Zeiss-Stiftung Radial polarization-rotating optical arrangement and microlithographic projection exposure system incorporating said arrangement

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2569711B2 (ja) * 1988-04-07 1997-01-08 株式会社ニコン 露光制御装置及び該装置による露光方法
US5233460A (en) 1992-01-31 1993-08-03 Regents Of The University Of California Method and means for reducing speckle in coherent laser pulses
US5442184A (en) 1993-12-10 1995-08-15 Texas Instruments Incorporated System and method for semiconductor processing using polarized radiant energy
US6285443B1 (en) 1993-12-13 2001-09-04 Carl-Zeiss-Stiftung Illuminating arrangement for a projection microlithographic apparatus
EP0658811B1 (de) * 1993-12-13 1998-06-17 Carl Zeiss Beleuchtungseinrichtung für eine Projektions-Mikrolithographie-Belichtungsanlage
DE19520563A1 (de) * 1995-06-06 1996-12-12 Zeiss Carl Fa Beleuchtungseinrichtung für ein Projektions-Mikrolithographie-Gerät
US5815247A (en) * 1995-09-21 1998-09-29 Siemens Aktiengesellschaft Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures
US6392890B1 (en) 2000-12-20 2002-05-21 Nortel Networks Limited Method and device for heat dissipation in an electronics system
TW200412617A (en) * 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
KR101119723B1 (ko) * 2003-09-26 2012-03-23 칼 짜이스 에스엠티 게엠베하 마이크로 리소그래피 투영 노광
US6970233B2 (en) * 2003-12-03 2005-11-29 Texas Instruments Incorporated System and method for custom-polarized photolithography illumination
JP4497968B2 (ja) * 2004-03-18 2010-07-07 キヤノン株式会社 照明装置、露光装置及びデバイス製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6191880B1 (en) 1995-09-23 2001-02-20 Carl-Zeiss-Stiftung Radial polarization-rotating optical arrangement and microlithographic projection exposure system incorporating said arrangement
JP2000323403A (ja) 1999-05-11 2000-11-24 Carl Zeiss Stiftung Trading As Carl Zeiss マイクロリソグラフにおける投影露光装置および露光方法
US6483573B1 (en) 1999-05-11 2002-11-19 Carl-Zeiss-Stiftung Projection exposure system and an exposure method in microlithography

Also Published As

Publication number Publication date
JP2006041540A (ja) 2006-02-09
TWI413853B (zh) 2013-11-01
US20060055909A1 (en) 2006-03-16
EP1621930A2 (en) 2006-02-01
EP1621930A3 (en) 2011-07-06
KR20060048810A (ko) 2006-05-18
JP4795745B2 (ja) 2011-10-19
TW200611063A (en) 2006-04-01

Similar Documents

Publication Publication Date Title
KR101212921B1 (ko) 마이크로리소그래픽 투영 노광 장치용 조명 시스템
US8081295B2 (en) Projection exposure method and projection exposure system therefor
KR101491229B1 (ko) 마이크로리소그래픽 투영 노광 장치의 광학 시스템
US20110063597A1 (en) Optical system for a microlithographic projection exposure apparatus and microlithographic exposure method
TW452677B (en) Projection exposure system and an exposure method in microlithography
US7940375B2 (en) Transmission filter apparatus
KR101074995B1 (ko) 마이크로리소그래피 투영 노광 장치의 광학계
US8035803B2 (en) Subsystem of an illumination system of a microlithographic projection exposure apparatus
WO2008019936A2 (en) Microlithographic projection exposure apparatus and microlithographic exposure method
KR20140069152A (ko) 조명 광학 장치, 광학계 유닛, 조명 방법, 및 노광 방법 및 장치
JP5319766B2 (ja) マイクロリソグラフィ投影露光装置の光学系及びマイクロリソグラフィ露光方法
JP4920041B2 (ja) 光学系とりわけマイクロリソグラフィック投影露光機における偏光分布に影響を与えるための装置及び方法
JP4699908B2 (ja) 電気光学調整器を使用するシステム及び方法
JP5846471B2 (ja) 偏光影響光学装置及びマイクロリソグラフィ投影露光装置の光学系
JP4896919B2 (ja) リソグラフィ装置およびデバイス製造方法
JP5928653B2 (ja) マイクロリソグラフィ投影露光装置の光学系
WO2006040184A2 (en) Illumination system for a microlithographic projection exposure apparatus
JP2009544146A (ja) マイクロリソグラフィ投影露光装置の照明システム
WO2013042679A1 (ja) 照明光学装置、光学系ユニット、照明方法、並びに露光方法及び装置
US9588433B2 (en) Optical system, in particular of a microlithographic projection exposure apparatus
KR20150092285A (ko) 마이크로리소그래픽 투영 노광 장치의 광학 시스템

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20151126

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20161201

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20171211

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20171211