TWI411893B - 配線基板之殘渣去除用組成物及洗淨方法 - Google Patents
配線基板之殘渣去除用組成物及洗淨方法 Download PDFInfo
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- TWI411893B TWI411893B TW095147558A TW95147558A TWI411893B TW I411893 B TWI411893 B TW I411893B TW 095147558 A TW095147558 A TW 095147558A TW 95147558 A TW95147558 A TW 95147558A TW I411893 B TWI411893 B TW I411893B
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- IQQDNMHUOLMLNJ-UHFFFAOYSA-N quinolin-3-ol Chemical compound C1=CC=CC2=CC(O)=CN=C21 IQQDNMHUOLMLNJ-UHFFFAOYSA-N 0.000 description 1
- XMIAFAKRAAMSGX-UHFFFAOYSA-N quinolin-5-amine Chemical compound C1=CC=C2C(N)=CC=CC2=N1 XMIAFAKRAAMSGX-UHFFFAOYSA-N 0.000 description 1
- GYESAYHWISMZOK-UHFFFAOYSA-N quinolin-5-ol Chemical compound C1=CC=C2C(O)=CC=CC2=N1 GYESAYHWISMZOK-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002426 superphosphate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
- H05K2203/0796—Oxidant in aqueous solution, e.g. permanganate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax or thiol
- H05K2203/124—Heterocyclic organic compounds, e.g. azole, furan
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0041—Etching of the substrate by chemical or physical means by plasma etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
本發明係關於一種可應用於半導體積體電路、液晶面板、有機電致發光元件(以下，簡稱為EL。)面板、印刷基板等配線基板製造之殘渣去除用組成物及洗淨方法，詳言之，關於一種含有鈦或鈦合金之配線基板的殘渣去除用組成物及洗淨方法。
於半導體積體電路、液晶面板、有機EL面板、印刷基板等配線基板之製程中，於基板表面形成電路之際，將光阻塗布於基板表面、光罩曝光、進行光阻之顯像後，藉由乾蝕刻步驟而形成配線。於乾蝕刻步驟後之圖案側部與底面部，由於附著來自光阻之殘渣或來自積體電路所用的構件之殘渣，此殘渣之去除成為必要的。
為了去除此乾蝕刻步驟後附著於基板之殘渣的方法，濕式製程已被探討，例如，有人曾提案：使用由羥基胺、醇胺與沒食子化合物所構成之剝除用組成物的方法(專利文獻1)；使用由氟化物與有機溶劑所構成之光阻剝除用組成物的方法(專利文獻2)；使用由過氧化氫、第四級銨鹽與防蝕劑所構成之光阻剝除用組成物的方法(專利文獻3)；使用由過氧化氫、硫酸銨、氟化物與螯合劑所構成之光阻剝除用組成物(專利文獻4)的方法等。
針對於利用此等濕式製程所進行的殘渣去除步驟所用之光阻剝除用組成物，尋求對於銅、鋁、鈦及此等合金等配線材料、絕緣膜材料及擴散防止膜材料之腐蝕性為低者，尤其隨著近年來半導體積體電路等之微細化，所容許之腐蝕性標準極為嚴格。
然而，根據該濕式製程之方法，對於鈦或鈦合金之腐蝕性為大的，適用於採用鈦或鈦合金之配線基板製造的殘渣去除步驟為困難的。
專利文獻1：日本專利特開平9-296200號公報
專利文獻2：日本專利特開平11-67632號公報
專利文獻3：日本專利特開2002-202617號公報
專利文獻4：日本專利特開2004-325918號公報
本發明之目的在於提供一種殘渣去除用組成物及洗淨方法，其係在配線基板之製造中不會腐蝕高腐蝕性之鈦或鈦合金，並能夠有效去除殘存於乾蝕刻後之光阻或來自金屬之殘渣。
本發明人等針對該課題而鑽研之結果，發現：含有氧化劑與唑類化合物，其pH為1~7之組成物，不會腐蝕鈦或鈦合金，能夠有效去除乾蝕刻後之光阻殘渣或來自配線材料之銅、鋁、鈦等金屬的殘渣，於是完成了本發明。
亦即，本發明提供下列配線基板之殘渣去除用組成物及洗淨方法：
1.一種配線基板之殘渣去除用組成物，其特徵在於：含有氧化劑與唑類化合物、且pH為1~7。
2.如第1項之配線基板之殘渣去除用組成物，其中氧化劑為由過氧化氫、臭氧、過錳酸鉀、過碳酸與其鹽、過磷酸與其鹽、過硫酸與其鹽、碘酸與其鹽、溴酸與其鹽、過氯酸與其鹽、氯酸與其鹽、次氯酸與其鹽所選出之至少一種。
3.如第2項之配線基板之殘渣去除用組成物，其中氧化劑為過氧化氫。
4.如第1至3項中任一項之配線基板之殘渣去除用組成物，其中唑類化合物為三唑類化合物及/或四唑類化合物。
5.如第1至4項中任一項之配線基板之殘渣去除用組成物，其中唑類化合物為0.0001~5質量%。
6.如第3至5項中任一項之配線基板之殘渣去除用組成物，其中過氧化氫為0.01~20質量%。
7.一種配線基板之洗淨方法，其特徵係使用如第1至6項中任一項之配線基板之殘渣去除用組成物，去除乾蝕刻後之配線基板的殘渣。
8.如第7項之配線基板之洗淨方法，其中配線基板含有鈦及/或鈦合金。
藉由使用本發明之配線基板殘渣去除用組成物，不會腐蝕鈦或鈦合金，能夠有效去除於半導體積體電路、液晶面板、有機EL面板、印刷基板等配線基板上之光阻，尤其含有鈦之配線基板上乾蝕刻後所殘存之光阻、來自銅或鋁、鈦等金屬之殘渣物，並能夠有效製造使用此等基板之半導體裝置。
以下，針對本發明詳加說明。
用於本發明配線基板之殘渣去除用組成物(也簡稱為殘渣去除用組成物)的氧化劑，可列舉：過氧化氫、臭氧、過錳酸鉀、過碳酸與其鹽、過磷酸與其鹽、過硫酸與其鹽、碘酸與其鹽、溴酸與其鹽、過氯酸與其鹽、氯酸與其鹽、次氯酸與其鹽等，能夠單獨使用或混合後使用，尤以過氧化氫特別理想。
將過氧化氫作為氧化劑使用之情形，洗淨液中的過氧化氫之濃度較宜為0.01質量%~20質量%，更佳為0.05質量%~5質量%，尤以0.1質量%~3質量%特別理想。藉由使過氧化氫之濃度成為0.01質量%以上，殘渣去除性將提高；藉由使其成為20質量%以下，避免鈦之溶解性變大。
用於本發明之殘渣去除用組成物的唑類化合物，可列舉：咪唑、吡唑、噻唑、異噁唑、苯并三唑、1H－1,2,3－三唑、1H－1,2,4－三唑、1H－四唑、1－甲基咪唑、苯并咪唑、3－甲基吡唑、4－甲基吡唑、3,5－二甲基吡唑、3－胺基吡唑、3－胺基－5－甲基吡唑、4－甲基噻唑、5－甲基異噁唑、3－胺基－5－甲基異噁唑、2－胺基噻唑、1,2,3－三唑－4,5－二羧酸、3,5－二胺基－1,2,4－三唑、3－胺基－1,2,4－三唑、1H－4/5－甲基苯并三唑、2－(3,5－二－t－丁基－2－羥基苯基)苯并三唑、5－胺基－1H－四唑等。尤其，三唑類化合物或四唑類化合物適合，更佳為5－胺基－1H－四唑、苯并三唑、1H－1,2,4－三唑、3,5－二胺基－1,2,4－三唑。此等四唑類化合物成為鈦或鈦合金用之防蝕劑，可以單獨使用或混合後使用。
還有，除了前述唑類化合物之防蝕劑，於本發明之殘渣去除用組成物中，也可以合併使用吡咯類、吡啶類、喹啉類、嗎啉類等。
吡咯類可列舉：吡咯、2H-吡咯、1-甲基吡咯、2-乙基吡咯、2,4-二甲基吡咯、2,5-二甲基吡咯、1,5,5-三甲基吡咯等。吡啶類可列舉：吡啶、2-甲基吡啶、3-甲基吡啶、4-甲基吡啶、2-乙基吡啶、3-乙基吡啶、4-乙基吡啶、2,3-二甲基吡啶、2,4-二甲基吡啶、3,5-二甲基吡啶、4-t
-丁基吡啶、2-胺基吡啶、3-胺基吡啶、4-胺基吡啶等。喹啉類可列舉：喹啉、異喹啉、2-甲基喹啉、3-甲基喹啉、2-羥基喹啉、3-羥基喹啉、5-羥基喹啉、3-胺基喹啉、5-胺基喹啉、8-胺基喹啉、5-硝基喹啉、6-硝基喹啉、8-硝基喹啉、8-甲基-5-硝基喹啉、8-羥基-5-硝基喹啉等。嗎啉類可列舉：嗎啉、1-甲基嗎啉、1-乙基嗎啉、羥乙基嗎啉、羥丙基嗎啉、胺乙基嗎啉、胺丙基嗎啉等。
用於本發明之殘渣去除用組成物的唑類化合物之濃度較宜為0.0001質量%~5質量%，更佳為0.01質量%~3質量%，尤以0.1質量%~1質量%特別理想。藉由設定唑類化合物濃度為0.0001質量%以上，可以得到對於鈦或鈦合金之防蝕效果，基於經濟性或實用性之觀點，較宜設定唑類化合物之濃度為5質量%以下。
由於過氧化氫對金屬為不安定的，本發明之殘渣去除用組成物較宜含有過氧化氫之安定劑。能夠使用習知之過氧化氫安定劑，具體而言，例如，可列舉：胺基三(亞甲基膦酸)、1-羥亞乙基-1,1-二膦酸、伸乙基二胺四(亞甲基膦酸)、二伸乙基三胺五(亞甲基膦酸)、伸乙基二胺等之螯合性安定劑。於本發明中，此等安定劑並無特別之限制而能夠加以使用。安定劑之濃度較宜為0.0001質量%~0.1質量%。藉由設定安定劑之濃度為0.0001質量%以上，可以得到將過氧化氫予以安定化之效果，基於經濟性或實用性之觀點，較宜為0.1質量%以下。
本發明之殘渣去除用組成物的pH為1~7，更佳為2~6。藉由設定pH為1以上，殘渣去除性將提高，藉由設定pH為7以下，鈦或鈦合金之溶解將被抑制。使用於pH調整之物質並無特別之限制，能夠使用硫酸、磷酸、鹽酸等無機酸，或蟻酸、醋酸等有機酸等之一般酸。
本發明之殘渣去除用組成物係於半導體製造裝置乾蝕刻後之殘渣去除步驟單獨使用，能夠有效去除來自經歷乾蝕刻步驟之半導體積體電路、液晶面板、有機EL面板、印刷基板等配線基板上之光阻的殘渣，及來自配線材料之銅、鋁、鈦等之金屬的殘渣。
於利用本發明之殘渣去除用組成物處理配線基板之前後，利用其他光阻剝除用組成物處理配線基板上並無問題。此時之光阻剝除用組成物能夠使用習知者，尤以有機鹼系之組成物特別理想。
作為本發明之洗淨方法所用之配線基板，可列舉：矽、非晶性矽、聚矽、氧化矽、氮化矽、銅、鈦、氮化鈦、鈦－鎢、鎢、鉭、鉭合金、鈷、鈷合金、鉻、鉻氧化物、鉻合金等之半導體配線材料；或鉀－砷、鉀－磷、銦－磷等之化合物半導體所用之半導體基板；聚醯亞胺樹脂等之印刷基板、LCD等所用之玻璃基板等。利用本發明之殘渣去除用組成物不會腐蝕此等配線基板。
接著，藉由實施例與比較例，進一步具體說明本發明。本發明係根據此等實施例，但是並未予以任何限制。
還有，於以下之實施例與比較例中，殘渣去除用組成物之測定評估方法係如下所示：1.測試片A之製作於層壓銅與鈦而成的配線層與摻雜碳之氧化矽而成的絕緣層之矽晶圓基板上形成光阻圖案，藉由將該光阻圖案作為光罩，再藉由乾蝕刻而形成由銅、鈦、摻雜碳之氧化矽而成的圖案，得到測試片A。將測試片A之剖面示意圖顯示於第1圖。
2.鈦溶解速度之測定(TiE/R)將殘渣去除組成物溫熱至40℃，將表面上已製作厚度1000鈦膜之矽晶圓浸漬既定時間之後，進行超純水輕洗，利用螢光X線裝置以測定處理前後之鈦膜厚度差。晶圓之浸漬時間係調節至鈦膜不消失之程度。由所得到的膜厚度差而算出每分鐘之鈦溶解速度(TiE/R)。
3.配線層腐蝕性、殘渣去除性之評估於40℃，將測試片A，於殘渣去除組成物中進行3分鐘浸漬處理後，進行超純水輕洗，利用氮氣流動予以乾燥，並利用掃描型電子顯微鏡(SEM)觀察以確認配線層有無腐蝕及有無殘渣。
配線層腐蝕性與殘渣去除性之評估係進行如下方式：(配線層腐蝕性)○：完全未觀察到配線層之腐蝕△：一部分觀察到配線層之腐蝕
×：整面觀察到配線層之腐蝕。
○：完全未觀察到殘渣之殘存
△：一部分觀察到殘渣之殘存
×：整面觀察到殘渣之殘存。
製作顯示於表1之殘渣去除用組成物，進行測試片A之鈦溶解速度的測定，與配線層腐蝕性、殘渣去除性的評估。
還有，於表1與表2之表中的DTPP表示二伸乙基三胺五(亞甲基膦酸)。另外，表中組成所示之濃度(%)全部為質量%，未達到100質量%之殘留部分全部為水。
於此等實施例中，不發生配線層之腐蝕，能夠去除殘渣，也能夠抑制鈦之溶解。
製作顯示於表2之組成的殘渣去除性用組成物，評估測試片A之配線腐蝕性、殘渣去除性，另外，測定鈦溶解速度(TiE/R)。
於比較例1~7中，觀察到鈦溶解速度為大的，配線之腐蝕。另外，於比較例8、9中，雖然鈦溶解速度為小的，但是觀察到配線之腐蝕。
藉由使用本發明之殘渣去除用組成物，於配線基板之製造上，不會腐蝕高腐蝕性之鈦或鈦合金，能夠有效去除殘存於乾蝕刻後之光阻或來自金屬之殘渣，尤其能夠有效製造使用含有鈦或鈦合金之配線基板的半導體裝置。
1．．．矽基板
2．．．碳摻雜劑氧化矽
3．．．光阻
4．．．銅
5．．．鈦
6．．．乾蝕刻殘渣物
第1圖係於實施例與比較例中所用之歷經蝕刻處理所製得之接觸洞構造及通道構造的矽晶圓基板剖面圖。於圖中，雖然於銅配線上正確製作接觸洞與通道，實際上，接觸洞與通道可能偏離，此情形下，鈦部分將露出。
Claims (6)
- 一種配線基板之殘渣去除用組成物，其特徵在於：含有氧化劑與唑類化合物、且pH為1~7，氧化劑為過氧化氫，並包含過氧化氫安定劑，且該安定劑之含量為0.0001~0.1質量%。
- 如申請專利範圍第1項之配線基板之殘渣去除用組成物，其中唑類化合物為三唑類化合物及/或四唑類化合物。
- 如申請專利範圍第2項之配線基板之殘渣去除用組成物，其中唑類化合物為0.0001~5質量%。
- 如申請專利範圍第1項之配線基板之殘渣去除用組成物，其中過氧化氫為0.01~20質量%。
- 一種配線基板之洗淨方法，其特徵係使用如申請專利範圍第1至4項中任一項之配線基板之殘渣去除用組成物，去除乾蝕刻後之配線基板的殘渣。
- 如申請專利範圍第5項之配線基板之洗淨方法，其中配線基板含有鈦及/或鈦合金。
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| JP5676908B2 (ja) * | 2010-04-21 | 2015-02-25 | 上村工業株式会社 | プリント配線基板の表面処理方法及び表面処理剤 |
| CN102673116B (zh) * | 2012-05-24 | 2014-09-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | 消除印刷器件卫星点的方法 |
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| CN105045051B (zh) * | 2015-08-24 | 2016-06-01 | 北京中科紫鑫科技有限责任公司 | 光刻胶的去除方法 |
| KR102412268B1 (ko) * | 2016-01-26 | 2022-06-23 | 동우 화인켐 주식회사 | 표시장치용 어레이 기판의 제조방법 |
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| WO2019044463A1 (ja) * | 2017-08-31 | 2019-03-07 | 富士フイルム株式会社 | 処理液、キット、基板の洗浄方法 |
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| TW200732864A (en) | 2007-09-01 |
| CN101331811A (zh) | 2008-12-24 |
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| JP5292811B2 (ja) | 2013-09-18 |
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