TWI407614B - 用於動態移動基材之電漿處理之線性電漿源 - Google Patents
用於動態移動基材之電漿處理之線性電漿源 Download PDFInfo
- Publication number
- TWI407614B TWI407614B TW098107930A TW98107930A TWI407614B TW I407614 B TWI407614 B TW I407614B TW 098107930 A TW098107930 A TW 098107930A TW 98107930 A TW98107930 A TW 98107930A TW I407614 B TWI407614 B TW I407614B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- plasma
- processing chamber
- processing
- coupled
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 111
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- 229910000859 α-Fe Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 21
- 238000000151 deposition Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 11
- 230000008021 deposition Effects 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 47
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- 239000000945 filler Substances 0.000 description 9
- 230000005525 hole transport Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910001508 alkali metal halide Inorganic materials 0.000 description 2
- 150000008045 alkali metal halides Chemical class 0.000 description 2
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 150000004986 phenylenediamines Chemical group 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 101100192157 Mus musculus Psen2 gene Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- -1 naphthalene-substituted benzidine Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3603108P | 2008-03-12 | 2008-03-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200947786A TW200947786A (en) | 2009-11-16 |
| TWI407614B true TWI407614B (zh) | 2013-09-01 |
Family
ID=41063481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098107930A TWI407614B (zh) | 2008-03-12 | 2009-03-11 | 用於動態移動基材之電漿處理之線性電漿源 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8377209B2 (enExample) |
| JP (1) | JP5535089B2 (enExample) |
| KR (1) | KR101333226B1 (enExample) |
| CN (1) | CN101971700B (enExample) |
| TW (1) | TWI407614B (enExample) |
| WO (1) | WO2009114241A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100252047A1 (en) * | 2009-04-03 | 2010-10-07 | Kirk Seth M | Remote fluorination of fibrous filter webs |
| JP5740203B2 (ja) * | 2010-05-26 | 2015-06-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びその処理ガス供給構造 |
| TWI486996B (zh) | 2013-12-04 | 2015-06-01 | Ind Tech Res Inst | 電漿裝置及電漿裝置的操作方法 |
| CN103993297A (zh) * | 2014-06-09 | 2014-08-20 | 中国科学院宁波材料技术与工程研究所 | 一种连续快速生长石墨烯的气相沉积装置 |
| US11533801B2 (en) | 2017-11-30 | 2022-12-20 | Corning Incorporated | Atmospheric pressure linear rf plasma source for surface modification and treatment |
| CN115376974B (zh) * | 2022-09-28 | 2025-04-15 | 西实显示高新材料(沈阳)有限公司 | 偏压装置及基片处理设备 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5998933A (en) * | 1998-04-06 | 1999-12-07 | Shun'ko; Evgeny V. | RF plasma inductor with closed ferrite core |
| US6367411B2 (en) * | 1996-09-10 | 2002-04-09 | Hitachi Maxell, Ltd. | Plasma CVD apparatus |
| TW200644085A (en) * | 2005-03-25 | 2006-12-16 | Tokyo Electron Ltd | A plasma enhanced atomic layer deposition system having reduced contamination |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100212125B1 (ko) * | 1996-03-19 | 1999-08-02 | 윤종용 | 고밀도 플라즈마 소스의 이온화 증진 구조 |
| JPH10219459A (ja) * | 1997-02-12 | 1998-08-18 | Fuji Photo Film Co Ltd | プラズマｃｖｄ装置およびこれを用いた磁気記録媒体の製造方法 |
| KR100320197B1 (ko) * | 1999-08-21 | 2002-01-10 | 구자홍 | 직류전원 플라즈마중합 연속처리장치 |
| US6410449B1 (en) * | 2000-08-11 | 2002-06-25 | Applied Materials, Inc. | Method of processing a workpiece using an externally excited torroidal plasma source |
| JP3509758B2 (ja) * | 2001-01-31 | 2004-03-22 | シャープ株式会社 | プラズマ処理装置およびプラズマ処理機、並びにプラズマ処理方法 |
| EP1351321B1 (en) * | 2002-04-01 | 2013-12-25 | Konica Corporation | Support and organic electroluminescence element comprising the support |
| US20050181535A1 (en) * | 2004-02-17 | 2005-08-18 | Yun Sun J. | Method of fabricating passivation layer for organic devices |
| US20060027329A1 (en) * | 2004-08-09 | 2006-02-09 | Sinha Ashok K | Multi-frequency plasma enhanced process chamber having a torroidal plasma source |
| US7109098B1 (en) * | 2005-05-17 | 2006-09-19 | Applied Materials, Inc. | Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
| KR100897176B1 (ko) * | 2005-07-20 | 2009-05-14 | 삼성모바일디스플레이주식회사 | 유도 결합형 플라즈마 처리 장치 |
| KR20070094412A (ko) | 2006-03-17 | 2007-09-20 | 코스텍시스템(주) | 이 중 열 차단 보호벽을 갖는 플라즈마 화학 증착 챔버 |
| EA020763B9 (ru) * | 2008-08-04 | 2015-05-29 | Эй-Джи-Си Флет Гласс Норт Эмерике, Инк. | Источник плазмы и способы нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы |
-
2009
- 2009-02-12 US US12/370,389 patent/US8377209B2/en not_active Expired - Fee Related
- 2009-02-17 JP JP2010550720A patent/JP5535089B2/ja not_active Expired - Fee Related
- 2009-02-17 KR KR1020107022785A patent/KR101333226B1/ko not_active Expired - Fee Related
- 2009-02-17 WO PCT/US2009/034262 patent/WO2009114241A1/en not_active Ceased
- 2009-02-17 CN CN200980109312.3A patent/CN101971700B/zh not_active Expired - Fee Related
- 2009-03-11 TW TW098107930A patent/TWI407614B/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6367411B2 (en) * | 1996-09-10 | 2002-04-09 | Hitachi Maxell, Ltd. | Plasma CVD apparatus |
| US5998933A (en) * | 1998-04-06 | 1999-12-07 | Shun'ko; Evgeny V. | RF plasma inductor with closed ferrite core |
| TW200644085A (en) * | 2005-03-25 | 2006-12-16 | Tokyo Electron Ltd | A plasma enhanced atomic layer deposition system having reduced contamination |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5535089B2 (ja) | 2014-07-02 |
| JP2011520029A (ja) | 2011-07-14 |
| KR20100127270A (ko) | 2010-12-03 |
| CN101971700A (zh) | 2011-02-09 |
| US8377209B2 (en) | 2013-02-19 |
| KR101333226B1 (ko) | 2013-11-26 |
| US20090233387A1 (en) | 2009-09-17 |
| WO2009114241A1 (en) | 2009-09-17 |
| CN101971700B (zh) | 2013-09-18 |
| TW200947786A (en) | 2009-11-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |