KR101333226B1 - 동적(이동 기판) 플라즈마 프로세싱을 위한 선형 플라즈마 소스 - Google Patents

동적(이동 기판) 플라즈마 프로세싱을 위한 선형 플라즈마 소스 Download PDF

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Publication number
KR101333226B1
KR101333226B1 KR1020107022785A KR20107022785A KR101333226B1 KR 101333226 B1 KR101333226 B1 KR 101333226B1 KR 1020107022785 A KR1020107022785 A KR 1020107022785A KR 20107022785 A KR20107022785 A KR 20107022785A KR 101333226 B1 KR101333226 B1 KR 101333226B1
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South Korea
Prior art keywords
substrate
plasma
processing chamber
chamber
substrate processing
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Expired - Fee Related
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KR1020107022785A
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English (en)
Korean (ko)
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KR20100127270A (ko
Inventor
존 엠. 화이트
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
KR1020107022785A 2008-03-12 2009-02-17 동적(이동 기판) 플라즈마 프로세싱을 위한 선형 플라즈마 소스 Expired - Fee Related KR101333226B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3603108P 2008-03-12 2008-03-12
US61/036,031 2008-03-12
PCT/US2009/034262 WO2009114241A1 (en) 2008-03-12 2009-02-17 Linear plasma source for dynamic (moving substrate) plasma processing

Publications (2)

Publication Number Publication Date
KR20100127270A KR20100127270A (ko) 2010-12-03
KR101333226B1 true KR101333226B1 (ko) 2013-11-26

Family

ID=41063481

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107022785A Expired - Fee Related KR101333226B1 (ko) 2008-03-12 2009-02-17 동적(이동 기판) 플라즈마 프로세싱을 위한 선형 플라즈마 소스

Country Status (6)

Country Link
US (1) US8377209B2 (enExample)
JP (1) JP5535089B2 (enExample)
KR (1) KR101333226B1 (enExample)
CN (1) CN101971700B (enExample)
TW (1) TWI407614B (enExample)
WO (1) WO2009114241A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100252047A1 (en) * 2009-04-03 2010-10-07 Kirk Seth M Remote fluorination of fibrous filter webs
JP5740203B2 (ja) * 2010-05-26 2015-06-24 東京エレクトロン株式会社 プラズマ処理装置及びその処理ガス供給構造
TWI486996B (zh) 2013-12-04 2015-06-01 Ind Tech Res Inst 電漿裝置及電漿裝置的操作方法
CN103993297A (zh) * 2014-06-09 2014-08-20 中国科学院宁波材料技术与工程研究所 一种连续快速生长石墨烯的气相沉积装置
US11533801B2 (en) 2017-11-30 2022-12-20 Corning Incorporated Atmospheric pressure linear rf plasma source for surface modification and treatment
CN115376974B (zh) * 2022-09-28 2025-04-15 西实显示高新材料(沈阳)有限公司 偏压装置及基片处理设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970067598A (ko) * 1996-03-19 1997-10-13 김광호 고밀도 플라즈마 소스의 이온화 증진 구조

Family Cites Families (14)

* Cited by examiner, † Cited by third party
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KR100296692B1 (ko) * 1996-09-10 2001-10-24 사토 도리 플라즈마cvd장치
JPH10219459A (ja) * 1997-02-12 1998-08-18 Fuji Photo Film Co Ltd プラズマｃｖｄ装置およびこれを用いた磁気記録媒体の製造方法
US5998933A (en) * 1998-04-06 1999-12-07 Shun'ko; Evgeny V. RF plasma inductor with closed ferrite core
KR100320197B1 (ko) * 1999-08-21 2002-01-10 구자홍 직류전원 플라즈마중합 연속처리장치
US6410449B1 (en) * 2000-08-11 2002-06-25 Applied Materials, Inc. Method of processing a workpiece using an externally excited torroidal plasma source
JP3509758B2 (ja) * 2001-01-31 2004-03-22 シャープ株式会社 プラズマ処理装置およびプラズマ処理機、並びにプラズマ処理方法
EP1351321B1 (en) * 2002-04-01 2013-12-25 Konica Corporation Support and organic electroluminescence element comprising the support
US20050181535A1 (en) * 2004-02-17 2005-08-18 Yun Sun J. Method of fabricating passivation layer for organic devices
US20060027329A1 (en) * 2004-08-09 2006-02-09 Sinha Ashok K Multi-frequency plasma enhanced process chamber having a torroidal plasma source
US7422636B2 (en) * 2005-03-25 2008-09-09 Tokyo Electron Limited Plasma enhanced atomic layer deposition system having reduced contamination
US7109098B1 (en) * 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
KR100897176B1 (ko) * 2005-07-20 2009-05-14 삼성모바일디스플레이주식회사 유도 결합형 플라즈마 처리 장치
KR20070094412A (ko) 2006-03-17 2007-09-20 코스텍시스템(주) 이 중 열 차단 보호벽을 갖는 플라즈마 화학 증착 챔버
EA020763B9 (ru) * 2008-08-04 2015-05-29 Эй-Джи-Си Флет Гласс Норт Эмерике, Инк. Источник плазмы и способы нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970067598A (ko) * 1996-03-19 1997-10-13 김광호 고밀도 플라즈마 소스의 이온화 증진 구조

Also Published As

Publication number Publication date
JP5535089B2 (ja) 2014-07-02
JP2011520029A (ja) 2011-07-14
KR20100127270A (ko) 2010-12-03
CN101971700A (zh) 2011-02-09
US8377209B2 (en) 2013-02-19
US20090233387A1 (en) 2009-09-17
WO2009114241A1 (en) 2009-09-17
CN101971700B (zh) 2013-09-18
TW200947786A (en) 2009-11-16
TWI407614B (zh) 2013-09-01

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