JP5535089B2 - 動的な(移動する基板の)プラズマ処理のための線状のプラズマ源 - Google Patents
動的な(移動する基板の)プラズマ処理のための線状のプラズマ源 Download PDFInfo
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- JP5535089B2 JP5535089B2 JP2010550720A JP2010550720A JP5535089B2 JP 5535089 B2 JP5535089 B2 JP 5535089B2 JP 2010550720 A JP2010550720 A JP 2010550720A JP 2010550720 A JP2010550720 A JP 2010550720A JP 5535089 B2 JP5535089 B2 JP 5535089B2
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- Prior art keywords
- plasma
- substrate
- processing chamber
- chamber
- coupled
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (8)
- 複数の壁を有する基板処理チャンバと、
前記チャンバ内に配置された1つまたは複数の回転可能なプロセスドラムと、
前記基板処理チャンバ内に配置され、基板が前記基板処理チャンバを通過する際に基板がその間を通過できるように隔置された複数の充填材ブロックと、
前記処理チャンバと結合された1つまたは複数のプラズマ源と、
を含む装置であって、前記プラズマ源が、
前記複数のチャンバ壁のうちの1つまたは複数に結合されたプラズマ管であって、中心本体から延びる2つのアーム部分をさらに含み、各アームの端部が前記チャンバ壁と結合された、プラズマ管と、
誘導結合されたプラズマを生じさせる手段とを含み、前記管の内部で誘導結合されたプラズマを生じさせる手段が、
前記プラズマ管を実質上取り囲む複数のフェライトブロックと、
前記複数のフェライトブロックの全てを実質上取り囲むコイルとを含む、装置。 - 前記処理チャンバを通過する基板と前記複数の充填材ブロックとの間の距離がプラズマ暗部より短い、請求項1に記載の装置。
- 前記複数の充填材ブロックと前記1つまたは複数の回転可能なプロセスドラムが、合わせて、前記処理チャンバ体積の約90%を含む、請求項2に記載の装置。
- 前記1つまたは複数の回転可能なプロセスドラムと前記1つまたは複数のプラズマ源の間の見通し経路内には、充填材ブロックが配置されない、請求項3に記載の装置。
- 基板処理チャンバと、
前記処理チャンバと結合され、実質上線状のプラズマを発生させることが可能な1つまたは複数のプラズマ源と、
を含むウェブ処理装置であって、前記プラズマ源が、
前記処理チャンバに結合されたプラズマ管であって、中心本体から延びる2つのアーム部分をさらに含み、各アームの端部が前記処理チャンバと結合された、プラズマ管と、
前記プラズマ管を実質上取り囲む複数のフェライトブロックと、
前記複数のフェライトブロックの全てを実質上取り囲むコイルとを含む、ウェブ処理装置。 - 前記コイルと結合された高周波電源をさらに含む、請求項5に記載の装置。
- 前記コイルが多重巻きコイルを含む、請求項6に記載の装置。
- ロールツーロール基板移送システムをさらに含む、請求項5に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3603108P | 2008-03-12 | 2008-03-12 | |
US61/036,031 | 2008-03-12 | ||
PCT/US2009/034262 WO2009114241A1 (en) | 2008-03-12 | 2009-02-17 | Linear plasma source for dynamic (moving substrate) plasma processing |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011520029A JP2011520029A (ja) | 2011-07-14 |
JP2011520029A5 JP2011520029A5 (ja) | 2013-08-08 |
JP5535089B2 true JP5535089B2 (ja) | 2014-07-02 |
Family
ID=41063481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010550720A Expired - Fee Related JP5535089B2 (ja) | 2008-03-12 | 2009-02-17 | 動的な(移動する基板の)プラズマ処理のための線状のプラズマ源 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8377209B2 (ja) |
JP (1) | JP5535089B2 (ja) |
KR (1) | KR101333226B1 (ja) |
CN (1) | CN101971700B (ja) |
TW (1) | TWI407614B (ja) |
WO (1) | WO2009114241A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100252047A1 (en) * | 2009-04-03 | 2010-10-07 | Kirk Seth M | Remote fluorination of fibrous filter webs |
JP5740203B2 (ja) * | 2010-05-26 | 2015-06-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びその処理ガス供給構造 |
TWI486996B (zh) | 2013-12-04 | 2015-06-01 | Ind Tech Res Inst | 電漿裝置及電漿裝置的操作方法 |
CN103993297A (zh) * | 2014-06-09 | 2014-08-20 | 中国科学院宁波材料技术与工程研究所 | 一种连续快速生长石墨烯的气相沉积装置 |
WO2019108855A1 (en) | 2017-11-30 | 2019-06-06 | Corning Incorporated | Atmospheric pressure linear rf plasma source for surface modification and treatment |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100212125B1 (ko) * | 1996-03-19 | 1999-08-02 | 윤종용 | 고밀도 플라즈마 소스의 이온화 증진 구조 |
KR100296692B1 (ko) * | 1996-09-10 | 2001-10-24 | 사토 도리 | 플라즈마cvd장치 |
JPH10219459A (ja) * | 1997-02-12 | 1998-08-18 | Fuji Photo Film Co Ltd | プラズマcvd装置およびこれを用いた磁気記録媒体の製造方法 |
US5998933A (en) * | 1998-04-06 | 1999-12-07 | Shun'ko; Evgeny V. | RF plasma inductor with closed ferrite core |
KR100320197B1 (ko) * | 1999-08-21 | 2002-01-10 | 구자홍 | 직류전원 플라즈마중합 연속처리장치 |
US6410449B1 (en) * | 2000-08-11 | 2002-06-25 | Applied Materials, Inc. | Method of processing a workpiece using an externally excited torroidal plasma source |
JP3509758B2 (ja) * | 2001-01-31 | 2004-03-22 | シャープ株式会社 | プラズマ処理装置およびプラズマ処理機、並びにプラズマ処理方法 |
EP1351321B1 (en) * | 2002-04-01 | 2013-12-25 | Konica Corporation | Support and organic electroluminescence element comprising the support |
US20050181535A1 (en) * | 2004-02-17 | 2005-08-18 | Yun Sun J. | Method of fabricating passivation layer for organic devices |
US20060027329A1 (en) * | 2004-08-09 | 2006-02-09 | Sinha Ashok K | Multi-frequency plasma enhanced process chamber having a torroidal plasma source |
US7422636B2 (en) * | 2005-03-25 | 2008-09-09 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system having reduced contamination |
US7109098B1 (en) * | 2005-05-17 | 2006-09-19 | Applied Materials, Inc. | Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
KR100897176B1 (ko) * | 2005-07-20 | 2009-05-14 | 삼성모바일디스플레이주식회사 | 유도 결합형 플라즈마 처리 장치 |
KR20070094412A (ko) | 2006-03-17 | 2007-09-20 | 코스텍시스템(주) | 이 중 열 차단 보호벽을 갖는 플라즈마 화학 증착 챔버 |
EA030379B1 (ru) * | 2008-08-04 | 2018-07-31 | Эй-Джи-Си Флет Гласс Норт Эмерике, Инк. | Способ нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы (варианты) |
-
2009
- 2009-02-12 US US12/370,389 patent/US8377209B2/en not_active Expired - Fee Related
- 2009-02-17 JP JP2010550720A patent/JP5535089B2/ja not_active Expired - Fee Related
- 2009-02-17 CN CN200980109312.3A patent/CN101971700B/zh not_active Expired - Fee Related
- 2009-02-17 KR KR1020107022785A patent/KR101333226B1/ko active IP Right Grant
- 2009-02-17 WO PCT/US2009/034262 patent/WO2009114241A1/en active Application Filing
- 2009-03-11 TW TW098107930A patent/TWI407614B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20090233387A1 (en) | 2009-09-17 |
JP2011520029A (ja) | 2011-07-14 |
WO2009114241A1 (en) | 2009-09-17 |
CN101971700B (zh) | 2013-09-18 |
TWI407614B (zh) | 2013-09-01 |
KR20100127270A (ko) | 2010-12-03 |
TW200947786A (en) | 2009-11-16 |
US8377209B2 (en) | 2013-02-19 |
CN101971700A (zh) | 2011-02-09 |
KR101333226B1 (ko) | 2013-11-26 |
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