TWI399824B - 提供減少電漿穿透與電弧之靜電吸盤的方法與設備 - Google Patents

提供減少電漿穿透與電弧之靜電吸盤的方法與設備 Download PDF

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Publication number
TWI399824B
TWI399824B TW097128899A TW97128899A TWI399824B TW I399824 B TWI399824 B TW I399824B TW 097128899 A TW097128899 A TW 097128899A TW 97128899 A TW97128899 A TW 97128899A TW I399824 B TWI399824 B TW I399824B
Authority
TW
Taiwan
Prior art keywords
dielectric
dielectric layer
tube
electrostatic chuck
plate
Prior art date
Application number
TW097128899A
Other languages
English (en)
Chinese (zh)
Other versions
TW200921838A (en
Inventor
露波默斯基德米翠
陳小龍
弓達勒卡蘇迪爾
拉倫德拉那卡他拉拉瑪亞
拉許德幕哈瑪德
考沙爾東尼
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/888,311 external-priority patent/US7848076B2/en
Priority claimed from US11/888,341 external-priority patent/US9202736B2/en
Priority claimed from US11/888,327 external-priority patent/US8108981B2/en
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW200921838A publication Critical patent/TW200921838A/zh
Application granted granted Critical
Publication of TWI399824B publication Critical patent/TWI399824B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Jigs For Machine Tools (AREA)
TW097128899A 2007-07-31 2008-07-30 提供減少電漿穿透與電弧之靜電吸盤的方法與設備 TWI399824B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/888,311 US7848076B2 (en) 2007-07-31 2007-07-31 Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
US11/888,341 US9202736B2 (en) 2007-07-31 2007-07-31 Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing
US11/888,327 US8108981B2 (en) 2007-07-31 2007-07-31 Method of making an electrostatic chuck with reduced plasma penetration and arcing

Publications (2)

Publication Number Publication Date
TW200921838A TW200921838A (en) 2009-05-16
TWI399824B true TWI399824B (zh) 2013-06-21

Family

ID=40380622

Family Applications (2)

Application Number Title Priority Date Filing Date
TW097128899A TWI399824B (zh) 2007-07-31 2008-07-30 提供減少電漿穿透與電弧之靜電吸盤的方法與設備
TW101139316A TWI479597B (zh) 2007-07-31 2008-07-30 提供減少電漿穿透與電弧之靜電吸盤的方法與設備

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW101139316A TWI479597B (zh) 2007-07-31 2008-07-30 提供減少電漿穿透與電弧之靜電吸盤的方法與設備

Country Status (4)

Country Link
JP (1) JP5140516B2 (https=)
KR (1) KR101125885B1 (https=)
SG (1) SG149791A1 (https=)
TW (2) TWI399824B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8336891B2 (en) * 2008-03-11 2012-12-25 Ngk Insulators, Ltd. Electrostatic chuck
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
JP5984504B2 (ja) * 2012-05-21 2016-09-06 新光電気工業株式会社 静電チャック、静電チャックの製造方法
US10784139B2 (en) * 2016-12-16 2020-09-22 Applied Materials, Inc. Rotatable electrostatic chuck having backside gas supply
US11456161B2 (en) * 2018-06-04 2022-09-27 Applied Materials, Inc. Substrate support pedestal
JP7269759B2 (ja) * 2019-03-12 2023-05-09 新光電気工業株式会社 基板固定装置
CN112908919B (zh) * 2019-12-04 2024-07-09 中微半导体设备(上海)股份有限公司 静电吸盘装置及包括该静电吸盘装置的等离子体处理装置
US12288672B2 (en) * 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
US11887811B2 (en) * 2020-09-08 2024-01-30 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US11699571B2 (en) 2020-09-08 2023-07-11 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US12557595B2 (en) * 2022-01-26 2026-02-17 Applied Materials, Inc. Methods for electrostatic chuck ceramic surfacing
JP7507812B2 (ja) * 2022-06-16 2024-06-28 日本特殊陶業株式会社 保持装置
JP7356620B1 (ja) * 2022-08-12 2023-10-04 日本碍子株式会社 半導体製造装置用部材

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5904776A (en) * 1996-04-26 1999-05-18 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
US20020135969A1 (en) * 1996-04-26 2002-09-26 Applied Materials, Inc. Electrostatic chuck having composite dielectric layer and method of manufacture
US20050211384A1 (en) * 2004-02-13 2005-09-29 Tokyo Electron Limited Thermally sprayed member, electrode and plasma processing apparatus using the electrode

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2106325A (en) * 1981-09-14 1983-04-07 Philips Electronic Associated Electrostatic chuck
US5792562A (en) * 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
US5644467A (en) * 1995-09-28 1997-07-01 Applied Materials, Inc. Method and structure for improving gas breakdown resistance and reducing the potential of arcing in a electrostatic chuck
EP0803900A3 (en) * 1996-04-26 1999-12-29 Applied Materials, Inc. Surface preparation to enhance the adhesion of a dielectric layer
US6263829B1 (en) * 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
US6500299B1 (en) * 1999-07-22 2002-12-31 Applied Materials Inc. Chamber having improved gas feed-through and method
JP3482949B2 (ja) * 2000-08-04 2004-01-06 松下電器産業株式会社 プラズマ処理方法及び装置
US6581275B2 (en) * 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
TW502368B (en) * 2001-11-06 2002-09-11 Duratek Inc Electrostatic chuck and method for manufacturing the same
JP2004158751A (ja) * 2002-11-08 2004-06-03 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP4421874B2 (ja) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5904776A (en) * 1996-04-26 1999-05-18 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
US20020135969A1 (en) * 1996-04-26 2002-09-26 Applied Materials, Inc. Electrostatic chuck having composite dielectric layer and method of manufacture
US6721162B2 (en) * 1996-04-26 2004-04-13 Applied Materials Inc. Electrostatic chuck having composite dielectric layer and method of manufacture
US20050211384A1 (en) * 2004-02-13 2005-09-29 Tokyo Electron Limited Thermally sprayed member, electrode and plasma processing apparatus using the electrode

Also Published As

Publication number Publication date
JP2009065133A (ja) 2009-03-26
SG149791A1 (en) 2009-02-27
JP5140516B2 (ja) 2013-02-06
TW201314834A (zh) 2013-04-01
TW200921838A (en) 2009-05-16
KR101125885B1 (ko) 2012-03-22
TWI479597B (zh) 2015-04-01
KR20090013052A (ko) 2009-02-04

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