SG149791A1 - Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing - Google Patents

Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing

Info

Publication number
SG149791A1
SG149791A1 SG200805596-4A SG2008055964A SG149791A1 SG 149791 A1 SG149791 A1 SG 149791A1 SG 2008055964 A SG2008055964 A SG 2008055964A SG 149791 A1 SG149791 A1 SG 149791A1
Authority
SG
Singapore
Prior art keywords
arcing
providing
plenum
electrostatic chuck
dielectric component
Prior art date
Application number
SG200805596-4A
Inventor
Dmitry Lubomirsky
Xinglong Chen
Sudhir Gondhalekar
Kadthala Ramaya Narendranath
Muhammad Rasheed
Tony Kaushal
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/888,327 external-priority patent/US8108981B2/en
Priority claimed from US11/888,341 external-priority patent/US9202736B2/en
Priority claimed from US11/888,311 external-priority patent/US7848076B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG149791A1 publication Critical patent/SG149791A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

METHOD AND APPARATUS FOR PROVIDING AN ELECTROSTATIC CHUCK WITH REDUCED PLASMA PENETRATION AND ARCING A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.
SG200805596-4A 2007-07-31 2008-07-28 Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing SG149791A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/888,327 US8108981B2 (en) 2007-07-31 2007-07-31 Method of making an electrostatic chuck with reduced plasma penetration and arcing
US11/888,341 US9202736B2 (en) 2007-07-31 2007-07-31 Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing
US11/888,311 US7848076B2 (en) 2007-07-31 2007-07-31 Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing

Publications (1)

Publication Number Publication Date
SG149791A1 true SG149791A1 (en) 2009-02-27

Family

ID=40380622

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200805596-4A SG149791A1 (en) 2007-07-31 2008-07-28 Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing

Country Status (4)

Country Link
JP (1) JP5140516B2 (en)
KR (1) KR101125885B1 (en)
SG (1) SG149791A1 (en)
TW (2) TWI399824B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8336891B2 (en) * 2008-03-11 2012-12-25 Ngk Insulators, Ltd. Electrostatic chuck
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
JP5984504B2 (en) * 2012-05-21 2016-09-06 新光電気工業株式会社 Electrostatic chuck and method for manufacturing electrostatic chuck
US10784139B2 (en) * 2016-12-16 2020-09-22 Applied Materials, Inc. Rotatable electrostatic chuck having backside gas supply
US11456161B2 (en) * 2018-06-04 2022-09-27 Applied Materials, Inc. Substrate support pedestal
JP7269759B2 (en) * 2019-03-12 2023-05-09 新光電気工業株式会社 Substrate fixing device
CN112908919A (en) * 2019-12-04 2021-06-04 中微半导体设备(上海)股份有限公司 Electrostatic chuck device and plasma processing device comprising same
JP7356620B1 (en) * 2022-08-12 2023-10-04 日本碍子株式会社 Components for semiconductor manufacturing equipment

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2106325A (en) * 1981-09-14 1983-04-07 Philips Electronic Associated Electrostatic chuck
US5792562A (en) * 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
US5644467A (en) * 1995-09-28 1997-07-01 Applied Materials, Inc. Method and structure for improving gas breakdown resistance and reducing the potential of arcing in a electrostatic chuck
US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
EP0803900A3 (en) * 1996-04-26 1999-12-29 Applied Materials, Inc. Surface preparation to enhance the adhesion of a dielectric layer
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US6263829B1 (en) * 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
US6500299B1 (en) * 1999-07-22 2002-12-31 Applied Materials Inc. Chamber having improved gas feed-through and method
JP3482949B2 (en) * 2000-08-04 2004-01-06 松下電器産業株式会社 Plasma processing method and apparatus
US6581275B2 (en) * 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
TW502368B (en) * 2001-11-06 2002-09-11 Duratek Inc Electrostatic chuck and method for manufacturing the same
JP2004158751A (en) * 2002-11-08 2004-06-03 Matsushita Electric Ind Co Ltd Plasma processing apparatus
JP4421874B2 (en) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP4364667B2 (en) * 2004-02-13 2009-11-18 東京エレクトロン株式会社 Thermal spray member, electrode, and plasma processing apparatus

Also Published As

Publication number Publication date
JP2009065133A (en) 2009-03-26
TW200921838A (en) 2009-05-16
KR101125885B1 (en) 2012-03-22
JP5140516B2 (en) 2013-02-06
KR20090013052A (en) 2009-02-04
TWI479597B (en) 2015-04-01
TWI399824B (en) 2013-06-21
TW201314834A (en) 2013-04-01

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