TW201314834A - Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing - Google Patents

Abstract

A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.

Description

Method and apparatus for providing an electrostatic chuck that reduces plasma penetration and arcing

Embodiments of the present invention generally relate to apparatus for fabricating semiconductor components, and more particularly to an electrostatic chuck for supporting a semiconductor wafer during processing.

Electrostatic chucks are widely used to provide support to substrates (or semiconductor wafers or wafers) in semiconductor processing equipment (eg, plasma processing chambers). The electrostatic chuck typically holds the substrate in a rest position during substrate processing (ie, during material deposition or etching). Electrostatic chucks utilize capacitive or Johnson-Rahbeck suction to hold the substrate in position.

One type of electrostatic chuck includes a body and a fluid distribution element covered with a layer of dielectric material ( thereby forming a support surface). The body is generally conductive such that the body forms the electrode of the electrostatic chuck. The substrate is placed on the support surface. The fluid distribution element includes a plenum having a plurality of fluid passages formed in the electrostatic chuck support surface for distributing a heat transfer fluid (eg, a gas) between the support surface of the suction cup and the back side of the substrate. In general, the gas fills the void region between the electrostatic chuck and the substrate, thereby increasing the heat transfer rate and heat transfer uniformity between the electrostatic chuck and the substrate.

In a plasma processing chamber, the electrostatic chuck is subjected to a high power radio frequency (RF) electric field and high density plasma around the substrate. In this plasma processing chamber, It can cause the gas to disintegrate due to the high electric field generated in the gas passage. The operation and life cycle of the electrostatic chuck are adversely affected by the formation of plasma in the gas passage. This plasma can damage the substrate, the electrostatic chuck, or both. In addition, the formation of plasma in the gas passage can cause arcing, which forms particulate contaminants in the chamber.

A variety of techniques have been developed to reduce plasma formation in gas passages. One technique involves inserting a porous dielectric plug into the channel of the surface of the chuck. The porosity of the plug is chosen to ensure that the size of the pores inhibits plasma formation but allows the heat transfer fluid to reach the substrate support surface. While porous materials provide protection from plasma formation, the manufacture of such electrostatic chucks is quite difficult, time consuming, and costly.

Therefore, there is a need for an improved electrostatic chuck to reduce plasma formation and arcing.

SUMMARY OF THE INVENTION The present invention generally provides a method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing in a heat transfer fluid passage. An embodiment includes a flat panel and a dielectric component, wherein the dielectric component is interposed in the flat panel. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. The porous dielectric layer formed on the dielectric member provides at least another portion of the fluid passage coupled to the plenum. In other embodiments, the fluid distribution element includes various rows of components A column that defines a fluid passage but does not provide a line-of-sight path from the substrate support surface to the plenum.

1 illustrates a plasma substrate processing system 36 that includes an electrostatic chuck 68 as in various embodiments of the present invention. The plasma processing system 36 is used to control the temperature of substrates (e.g., germanium wafers, GaAs wafers, etc.) while generating and maintaining a plasma environment for processing the substrates therein. The plasma is generated near the substrate to process the substrate, and the temperature of the substrate is controlled using various techniques, for example, by supplying a heat transfer fluid to the back surface of the substrate. Although plasma processing is described by a high density plasma-chemical vapor deposition (HDP-CVD) system (for example, 300 mm HDP-CVD Ultima X system of Applied Materials, Inc., Santa Clara, Calif.) One embodiment of the chamber, however, can be used in other processing chambers that use plasma, including physical vapor deposition chambers, chemical vapor deposition chambers, etching chambers, and other applications where substrate temperature needs to be controlled.

Figure 1 illustrates an embodiment of an HDP-CVD system 36 that uses an electrostatic chuck 68 to secure a substrate during substrate processing. In accordance with an embodiment of the invention, electrostatic chuck 68 is designed to reduce plasma penetration and arcing near suction cup 68.

System 36 includes a process chamber 38, a vacuum system 40, a source plasma system 42, a bias plasma system 44, a gas delivery system 46, and a remote plasma cleaning system 48.

The upper portion of the processing chamber 38 includes a dome 50 made of a dielectric material such as alumina or aluminum nitride. The dome 50 defines the upper boundary of the plasma processing zone 52. The bottom of the plasma processing zone 52 is defined by the upper surface of the substrate 54 and the substrate support 56.

The heating plate 58 and the cooling plate 60 are located above and thermally coupled to the dome 50. The heating plate 58 and the cooling plate 60 allow the dome temperature to be controlled within a difference of ± 10 ° C in the range of about 100 to 200 ° C. This allows the dome temperature to be optimized for a variety of treatments. For example, it is desirable to maintain the dome at a higher temperature than the deposition process during the cleaning or etching process. Precise control of the dome temperature also reduces the number of flakes or particles in the processing chamber and increases the bonding force between the deposited layer and the substrate.

Below the processing chamber 38 includes a body member 62 that connects the processing chamber to the vacuum system. The base 64 of the substrate support 56 is secured to the body member 62 and forms a continuous inner surface therewith. The substrate is transferred into and out of the processing chamber 38 by automatically controlling the vanes (not shown) to transfer the substrate through the insertion/removal opening 95 on one side of the processing chamber 38. A pneumatic actuator (not shown) raises and lowers the lift pin (not shown), which raises and lowers the lift pin (not shown) to raise and lower the wafer. Upon transfer into the processing chamber 38, the substrate is loaded onto the raised lift pins and then lowered to the substrate receiving portion 66 of the substrate support 56. The substrate receiving portion 66 includes an electrostatic chuck 68 that secures the substrate to the substrate support 56 during substrate processing.

The vacuum system 40 includes an adjustment body 70 that covers the multi-blade adjustment valve 72 and is coupled to the gate valve 74 and the turbo pump 76. It should be noted that the adjustment body 70 provides minimal airflow obstruction and symmetric suction, as also pending, U.S. Patent Application Serial No. SYMMETRIC CHAMBER, which was originally filed on Dec. 12, 1995 (Application No. 08/574,839), and filed on September 11, 1996 The day is again requested (application number is No. 08/712, 724). The gate valve 74 can isolate the pump 76 from the regulator 70 and can control the chamber pressure by limiting the drain capacity of the regulator valve 72 when fully open. The configuration of the regulating valve 72, the gate valve 74, and the turbo pump 76 can accurately and stably control the process chamber pressure at about 1 to 100 milliTorr.

The source plasma system 42 includes a top coil 78 and a side coil 80 mounted on a dome 50, and a symmetrical ground shield (not shown) reduces electrical coupling between the coils. The top coil 78 is activated by a top radio frequency (RF) source generator 82, and the side coils 80 are activated by a side radio frequency (RF) source generator 84, allowing each coil to have independent power levels and operating frequencies. This dual coil system controls the density of the radiation ions in the processing chamber 38 to enhance plasma uniformity. Side coil 80 and top coil 78 inductively couple energy into chamber 38. In a particular embodiment, the top RF source generator 82 provides up to 8000 W of RF power at a 2 MHz nominal frequency, while the side RF source generator 84 provides up to 8000 W of RF power at a 2 MHz nominal frequency. The operating frequencies of the top and side RF generators are offset from the nominal operating frequency (such as: 1.7 to 1.9 MHz and 1.9 to 2.1 MHz, respectively) to increase plasma generation efficiency.

RF generators 82 and 84 include a digitally controlled synthesizer and operate in a frequency range of from about 1.7 to about 2.1 MHz. Each generator includes one An RF control circuit (not shown) that measures the reflected power from the process chamber and the coil pair generator and adjusts the operating frequency to obtain the lowest reflected power, as will be appreciated by those skilled in the art. RF generators are typically designed to operate with loads having a characteristic impedance of 50 ohms. The RF power is reflected from a load that is different from the characteristic impedance of the generator. This reduces the power delivered to the load. In addition, the power reflected back from the load back to the generator can overload and destroy the generator. Since the impedance of the plasma is in the range of less than 5 ohms to over 900 ohms depending on a number of factors such as plasma ion density, and depending on the frequency of the reflected power system, the generator frequency can be increased from the RF according to the reflected power. The generator delivers power to the plasma and protects the generator. Another way to reduce reflected power and increase efficiency is to operate with a matching network.

Matching networks 89 and 90 match the output impedances of generators 82 and 84 to coils 78 and 80, respectively. The RF control circuit changes the capacitance value in the matching network to adjust the two matching networks to match the generator to the load as the load changes. The RF control circuit will adjust a matching network when the power reflected from the load back to the generator exceeds a certain limit. One way to provide a fixed match and effectively disable the RF control circuit from adjusting the match circuit is to set the reflected power limit to any desired value above the reflected power. This helps stabilize the plasma under certain conditions by keeping the matching network fixed in most of its conditions.

The bias plasma system 44 includes an RF bias generator 86 and a bias matching network 88. The bias plasma system 44 capacitively couples the substrate receiving portion 66 to the body member 62 (which acts as a compensation electrode). Biased plasma system 44 is used The plasma material generated by the source plasma system 42 is enhanced to be transferred to the surface of the substrate. In a particular embodiment, RF bias generator 86 provides up to 10,000 W of RF power at 13.56 MHz.

Other ways also help stabilize the plasma. For example, RF control circuitry can be used to determine the power delivered to the load (plasma) and increase or decrease the generator output power such that the delivered power remains substantially fixed during deposition of the film.

Gas delivery system 46 includes a plurality of gas sources 100a, 100b, 100c, 100d, and 100e. In one embodiment, the foregoing gas sources include silane, oxygen molecules, helium and argon, respectively. The gas delivery system 46 provides gas from a plurality of sources to the processing chamber to process the substrate via a gas delivery line 92 (only a portion of which is shown). The gas is introduced into the processing chamber 38 via the gas ring 94, the upper nozzle 96, and the exhaust port 98. In particular, gas sources 100a and 100d provide gas to upper nozzle 96 via flow controllers 120a and 120c and gas delivery line 92, respectively. A gas system from gas source 102b is provided to vent 98 via flow controller 120b. The upper nozzle 96 and the top exhaust port 98 independently control the gas flow at the top and side, which enhances film uniformity and fine-tunes film deposition and doping parameters. The top vent 98 is along a toroidal opening around the upper nozzle 96 through which gas can flow from the gas delivery system into the processing chamber.

Gas is supplied to the gas ring 94 from each of the foregoing gas sources via flow controllers 102a, 102b, 102c, 102d and 102e and a gas transfer line 92. The gas ring 94 has a plurality of gas nozzles 106 and 108 (only two of which are shown) that provide a uniform gas flow over the substrate. Nozzle length and nozzle angle The degree can be varied by changing the gas ring 94. This allows adjustment of uniformity characteristics and gas utilization efficiency for specific processing within individual processing chambers. In a particular embodiment, the gas ring 94 has a total of 36 gas nozzles, namely 24 first gas nozzles 108 and 12 second gas nozzles 106. In general, gas nozzle 108 (only one of which is shown) is coplanar and shorter than second gas nozzle 106.

In some embodiments, flammable, toxic, corrosive gases can be used. In these examples, it is desirable to eliminate the gases remaining in the gas transmission line after deposition. This can be accomplished by using a three-way valve (e.g., valve 112) to isolate process chamber 38 from transfer line 92a and evacuate transfer line 92a to, for example, vacuum lead line 114. As shown in Fig. 1, other similar valves, such as valves 112a and 112b, may be combined with other gas transmission lines. In practice, such a three-way valve can be placed adjacent to the processing chamber 38 to minimize the volume of the un-emptied gas delivery line (between the three-way valve and the processing chamber). Additionally, a two-way (open and close) valve (not shown) can be placed between the mass flow controller (MFC) and the process chamber, or between the gas source and the MFC.

System 36 further includes a remote cleaning RF plasma source (not shown) to provide cleaning gas to top nozzle 96 of chamber 38. In other embodiments, the cleaning gas (if used) enters the chamber 38 at other locations.

System controller 132 regulates the operation of system 36 and includes a processor 134 that is electrically coupled thereto to regulate its operation. In general, processor 134 is part of a single motherboard computer (SBC) that includes analog and digital inputs. / Output board, interface board and stepper motor controller board. The various components of CVD system 36 conform to the VME standard, which defines the motherboard, card slot, and connector type and size. The VME standard also defines a busbar structure with a 16-bit data bus and a 24-bit data bus. The processor 134 executes system control software, which is stored in a computer program in the memory 136 that is electrically coupled to the processor 134. Any form of memory can be used, such as a hard disk drive, a floppy disk drive, a memory card, or a combination thereof. The software controlled by the system includes combinations of commands such as timing, mixed gas, process chamber pressure, process chamber temperature, microwave power level, pedestal position, and other parameters for a particular process.

The uniformity of the temperature of the substrate 104 and the substrate temperature is an important processing parameter for processing the substrate 104. To produce uniform temperature characteristics, a heat transfer fluid is applied between the chuck 68 and the back surface of the substrate 104. For example, one embodiment of the invention uses helium as a heat transfer fluid. In general, electrostatic chuck 68 is circular, but electrostatic chuck 68 includes various regular and irregular geometries to accommodate non-circular substrates (e.g., square, rectangular substrates as planar panels).

In operation, the substrate 104 is placed on the electrostatic chuck 68 and a plurality of gaseous components are supplied from the gas panel 46 to the processing region 52 of the plasma processing chamber 38 to form a gaseous mixture. To ignite the plasma, RF power is applied to one or more of the electrodes, top coil 78 or side coils 80 in the substrate support 56. To maintain temperature uniformity of the substrate during processing, a heat transfer fluid (e.g., helium) is supplied via at least one fluid distribution element (as shown below) in an embodiment of the invention.

2 is a top plan view of an electrostatic chuck 68 having a fluid distribution element 222 in accordance with an embodiment of the present invention. Fig. 2A is a partial cross-sectional view of the electrostatic chuck 68 of Fig. 2. Figure 3 is a cross-sectional view of the chuck 68 shown in Figure 2 along line 3-3. The following description can be understood by referring to FIGS. 2 and 3 simultaneously. The electrostatic chuck 68 includes a body 220, a fluid distribution element 222 and a dielectric layer 224. In one embodiment of the electrostatic chuck 68, the body 220 is made of a conductive material (eg, aluminum) and the dielectric layer 224 A ceramic material (such as aluminum nitride, aluminum oxide, etc.). The fluid distribution element 222 is placed adjacent to the vicinity of the electrostatic chuck 68. The fluid distribution element 222 includes a plurality of holes 230 (or other forms of channels) that pass through the dielectric layer 224 to distribute a fluid (eg, helium) from the electrostatic chuck to the back surface of the substrate. For an electrostatic chuck 102 used in conjunction with a 12 inch (300 mm) diameter semiconductor wafer, there are 60 to 360 holes near the periphery of the electrostatic chuck 102. Each of the multiple holes 230 has a diameter generally between about 0.15 mm. These sizes are adjusted depending on the type of fluid distribution element used, the pressure within the processing chamber, and the amount of gas flow through the fluid distribution element 222.

The fluid distribution element 222 has an annular structure. In alternative embodiments, however, the fluid distribution element 222 has various geometric designs, depending on the user's needs, including multiple rings, radial arms, combinations of radiation and toroids, and the like. Embodiments of the invention do not limit the geometry of the fluid distribution elements.

Dielectric layer 224 covers at least a portion of the top surface of body 220 and at least a portion of fluid distribution element 222 to form a support surface 228. Support surface 228 supports substrate 104 disposed thereon. Dielectric layer 224 is interspersed on the top surface of the body and ground to a desired thickness.

The body 220 includes a top surface 332 and a channel 334 formed in the top surface 332 of the body 220. Generally, the channel 334 has a rectangular cross-sectional shape. However, in an alternate embodiment, the channels 334 have various geometric cross-sectional shapes. Fluid distribution element 222 is coupled to body 220 such that channel 334 and fluid distribution element 222 form a plenum 336, i.e., element 222 is positioned within channel 334 and secured therein. In addition, body 220 includes a conduit 338 that is coupled to passage 334 to provide fluid to plenum 336. According to one embodiment of the invention, the cooling gas system is supplied via conduit 338 and the fluid distribution element 222 is disposed by the gas chamber. The gas flows out through one or more multiple holes 230 (or other forms of channels) to provide a heat transfer fluid to the back surface of a substrate.

4 through 10 illustrate cross-sectional views of a dashed portion 230 of an electrostatic chuck (e.g., electrostatic chuck 102) having a fluid distribution component 222, a dielectric layer 228, and a body 220. In the description, the size of the electrostatic chuck has been enlarged to clearly describe the cross section of the fluid distribution element and the body.

In particular, Figure 4 illustrates a portion of an electrostatic chuck 402 in accordance with an embodiment of the present invention. The body 220 includes a dual damascene channel 404 having a lower channel 404A and an upper channel 404B, wherein the lower channel 404A is narrower than the upper channel. 404B. The electrostatic chuck 402 includes a fluid distribution element 422 having a flat plate 440 and a dielectric tube 442. The plate 440 is conformable to the upper channel 404B (eg, the plate has a circular planar shape to match the channel 404) such that the base 406 of the upper channel 404B forms a stop (stop). The height of the plate 440 is substantially the same as the height of the upper channel 404B, such that the top 408 of the plate 440 is substantially coplanar with the top 332 of the body 220. The plate 440 is made of a conductive material (e.g., aluminum) and is welded in the upper channel 404B. The plate 440 further includes a channel 410 formed in the bottom surface of the plate 440. In one embodiment of the invention, the width of the channel 410 is substantially similar to the width of the lower channel 404A; however, in other embodiments, the channel 410 is narrower than the lower channel 404A. Lower channel 404A is combined with channel 410 to define a plenum 336.

The dielectric tube 442 (electrical insulator) includes a first end 446, a second end 448 and an axial through hole 450. For example, dielectric tube 442 is made of alumina and has a diameter that substantially matches the diameter of opening 444 in plate 440. The diameter of the opening 444 is generally, but not limited to, about 0.008 吋 (about 0.2 mm) or more. In an alternate embodiment, the opening 444 has various geometric shapes, such as circular, triangular, square, and the like. Further, the shape and size of the opening substantially match the shape and size of the outer diameter of the dielectric tube 442. Dielectric tube 442 is positioned (eg, pressed) into opening 444. The opening 444 includes a flange 412 upon which the tubular member 442 rests (i.e., the flange forms a stop). In the illustrated embodiment, the first end 446 of the tubular member 442 extends above the surface 332 of the body 220. In other embodiments, the first end 446 of the tubular member 442 is coplanar with the surface 332.

At least a portion of the body 220 and at least a portion of the fluid distribution element 422 are covered by a dielectric layer 224 to form a support surface 428. Dielectric layer 224 is sprayed onto the top surface of the body and ground to a desired thickness. In an embodiment, the dielectric layer 224 includes thermal spray oxidation. Aluminum or sprayed alumina/titanium oxide. The application process of this thermal sprayed dielectric layer is well known in the art. The thermal spray treatment can be selected from a number of different methods, such as plasma spray, explosion gun spray, high velocity oxygen fuel (HVOF) spray, and flame spray.

In one embodiment, dielectric layer 224 is ground to a thickness represented by line 414 such that surface 428 of layer 224 is coplanar with first end 446 of tube 442. Alternatively, dielectric layer 224 is a porous ceramic such that film layer 224 is ground to a particular flatness, but film layer 224 covers at least first end 446 of tube 442. Gas from the plenum flows through the tube 442 and the dielectric layer 224 due to the porosity of the ceramic. For example, the dielectric layer 224 is formed adjacent to the first end 446 of the tube 442 in whole or in part from alumina having a porosity of 10% to 60% by volume, which produces a pore diameter of from about 1 to 100 microns. . In some embodiments, as will be described below with reference to Figure 8, the dielectric layer is porous adjacent the end 446 of the tubular member 442 and less porous elsewhere. According to the described, the channel 445 has the advantage of lacking a direct line of sight path from the support surface 428 to the plenum 436, thereby limiting the likelihood of plasma formation in the channel 445. In another embodiment, the dielectric layer 224 is ground to a particular flatness, wherein the film layer 224 covers the first end 446 of the tube 442. Holes 416 may be drilled or otherwise formed (e.g., laser drilled) through dielectric layer 224 to one of channels 445. The drilling process only drills through the dielectric material, ie the conductive material of the body is not splashed by the drilling process.

As is known in the art, the support surface 428 is further processed to provide A dielectric pattern 224 is formed on a trench pattern (not shown). The grooves are formed on the support surface 428 by mechanism or otherwise so that they are interlaced with the channels 445. Cooling gas may be directed from the passage 445 into the groove to evenly distribute the cooling gas over the entire support surface 428 of the electrostatic chuck 402.

By using an electrical insulator (dielectric tube and/or dielectric layer) to define the passage between the plenum and the substrate surface, the possibility of forming a plasma from the heat conducting gas or causing an arc from the plasma can be reduced. By reducing or eliminating plasma formation and arcing, the life of the electrostatic chuck can be significantly increased. The use of an insulator reduces the electric field in the channel, thus reducing the chance of plasma formation. Moreover, certain embodiments of the present invention use a fluid distribution element structure to further reduce the electric field in the channel by eliminating the line of sight path between the substrate support surface (where the high electric field is present) and the plenum conduction surface. When this line of sight path occurs, the volume of fluid in the channel is sufficient to ignite into a plasma. The use of a non-line of sight reduces the electric field built up by a large number of fluids (which may result in plasma formation), thus reducing or eliminating plasma formation or associated arcing.

Figure 5 illustrates a cross section of a portion of an electrostatic chuck 502 in accordance with another embodiment of the present invention. Similar to the embodiment of FIG. 4, the dielectric tube 542 is positioned through the plate 440. In an alternate embodiment, tube 542 extends to the bottom of channel 534, while second end 548 of tube 542 sits on a support element (eg, step 556) formed in the bottom of channel 534. As shown in the previous embodiment, the dielectric tube 542 and/or a portion of the dielectric layer 224 form an electrical insulator that defines a channel 545 for fluid to flow from the plenum 536 to the surface 528.

Figure 6 illustrates a cross section of a portion of an electrostatic chuck 602 of another embodiment of the present invention. Similar to the embodiments of Figures 4 and 5, the dielectric tube 642 is positioned through the plate 440. In an alternate embodiment, the dielectric tube 642 includes at least one notch 656 formed in the second end 604. In an alternate embodiment, the tube 642 includes a hole to facilitate fluid flow from the plenum 636 into the channel 645 of the tube 642. In the previous embodiment, the dielectric layer 224 is porous and covers a first end 606 of the tubular member 642. The membrane layer 224 is ground to expose the first end 606 of the tubular member 642, or a hole is formed in the membrane layer. The middle is connected to the channel 645. The dielectric tube 642 and the portion of the dielectric layer 224 form a channel 645 for fluid to flow out of the plenum. According to this, when the dielectric layer 224 is porous and covers the tubular member 642, the channel 645 has the advantage of lacking a direct line of sight path from the support surface 628 to the plenum 636, thereby limiting the formation of plasma in the channel 645.

Figure 7 illustrates a partial cross section of an electrostatic chuck 702 in accordance with yet another embodiment of the present invention. The electrostatic chuck 702 includes a body 720 and a fluid distribution element 722. Fluid distribution element 722 includes a flat plate 740 and a dielectric tube 742 that are assembled in the same manner as the prior embodiments. In this embodiment, body 720 includes a channel 734 that includes a dielectric end cap 760. Dielectric end cap 760 is positioned at the bottom of channel 734. The dielectric end cap 760 includes an opening 762 such that the cover 760 assumes a cup shape. The dielectric tube 742 includes a first end 746, a second end 748, and an axial through hole 750 connecting the first end 746 and the second end 748. In one embodiment of the invention, the dielectric layer 724 covers the first end 746 of the tube 742, and in the second embodiment, the dielectric layer 724 is ground to the line. 414 to expose the first end 746 of the tubular member 742. Dielectric cover 742 is placed in channel 734 such that second end 748 of tube 742 extends into opening 762 but is spaced apart therefrom to form a gap. Tube 742 and end cap 760 form a tortuous path with the flow system flowing therebetween. The use of such a passage ensures that there is no line of sight path from the conductive chamber wall to the surface of the suction cup.

Figure 8 illustrates a cross section of a portion of an electrostatic chuck 802 in accordance with another embodiment of the present invention. Electrostatic chuck 802 includes a fluid distribution element 822. The fluid distribution element 822 includes a plate 840 having an opening 844. The plate 840 is coupled to a body 820 such that the channel 834 forms a plenum 836 with the plate 840. Dielectric layer 824 covers at least a portion of body 820 and at least a portion of fluid distribution element 822. Dielectric layer 824 includes a porous dielectric segment 870 such that at least a portion of porous dielectric segment 870 overlaps opening 844. The porous dielectric segment 870 is a porous ceramic, such as alumina having a porosity between about 10% and 60% by volume, having a continuous channel formed through the porous dielectric segment 870. Interconnecting openings. The opening 844 forms a channel 845 with at least a portion of the porous dielectric section 870 for fluid to flow from the plenum 836 to the support surface 828 of the electrostatic chuck 802. According to the described, the channel 845 has the advantage of lacking a direct line of sight path from the support surface 828 to the conductive plenum 836, thereby inhibiting the formation of plasma in the channel 845.

Figure 9 illustrates a cross section of a portion of an electrostatic chuck 902 in accordance with another embodiment of the present invention. Electrostatic chuck 902 includes a fluid distribution element 922. Fluid distribution element 922 includes an opening 944 and a dielectric plug 980 tablet 940. The plate 940 is coupled to a body 920 such that the channel 934 forms a plenum 936 with the plate 940. The plate 940 and the body 920 are assembled in a manner as described above for other embodiments of the present invention. The diameter of the dielectric plug 980 is substantially matched to the diameter of the opening 944, which is located in the opening 1044 and is generally press-fitted therein. Dielectric layer 224 covers at least a portion of body 920 and at least a portion of fluid distribution element 922, thereby defining a support surface 928. Dielectric layer 224 is sprayed onto the top surface of body 920 and fluid distribution element 922 and ground to a desired thickness. Hole 982 forms a penetrating dielectric layer 924 and passes through dielectric plug 980. The holes 982 allow fluid to flow from the plenum 936 to the support surface 928 of the electrostatic chuck 902. Hole 982 is formed using a variety of techniques, such as mechanical drilling, laser drilling, and the like. The holes 982 are formed to penetrate only the dielectric material. Therefore, any metal residue generated by the drilling process is not formed in the axial through hole 982. Because of the absence of these metal residues, the possibility of plasma formation or arcing in the holes 982 can be limited.

Figure 10 illustrates a cross section of a portion of an electrostatic chuck 1002 in accordance with another embodiment of the present invention. Electrostatic chuck 1002 includes a fluid distribution element 1022. The fluid distribution element 1022 includes a flat plate 1040 and a dielectric cover 1042. The plate 1040 includes two rings 1040A and 1040B. The diameter of the ring 1040A is smaller than the diameter of the ring 1040B. Each of the rings 1040A and 1040B is seated on a ledge 406 formed at the bottom of the upper channel 404B. The plate 1040 is fused to the body 1020 to retain the plate in the upper channel 404B. A dielectric cover 1042 (annular to form a plenum 1036) is inserted into the upper channel 404B and sits on the plate 1040.

In another embodiment, the plate includes an inverted U-shaped cross section having a plurality of inverted recessed holes (e.g., flat plate 440 shown in FIG. 4). A circular (doughnut shaped) dielectric element having a cross-sectional shape similar to element 1042 is interposed in such a counter-recessed hole. Fluid distribution element 1022 is coupled to body 1020 such that fluid distribution element 1022 forms a plenum 1036 with channel 1034. Dielectric layer 224 covers at least a portion of body 1020 and at least a portion of fluid distribution element 1022, thereby forming a support surface 1028. Dielectric layer 224 is sprayed onto the top surface of body 1020 and fluid distribution element 1022 and ground to a desired thickness. A hole 1082 forms a penetrating dielectric layer 224 and a dielectric cover 1090. The hole 1082 is formed by various techniques, such as mechanical drilling, laser drilling, etc., as described in the embodiment of Fig. 9, the hole 1082 is formed to penetrate only the dielectric material, and therefore, there is no hole 1082. Any metal residue.

In each of the foregoing embodiments, there may be a rare case where the electrostatic chuck using the fluid distributing member of the present invention may be damaged by plasma formation or arcing, but the chuck may be easily repaired (or refreshed) by various methods. In general, destructive plasma formation or arcing occurs within or adjacent to dielectric components (tubes, porous inserts, etc.). Thus the dielectric layer can be removed locally (above the dielectric component) or removed as a whole (the entire chuck) to expose the dielectric component. The extraction tool can then be used to drill or pull the part to remove the part. Once removed, new dielectric components can be inserted and the dielectric layer replaced partially or entirely as needed. In some embodiments, the dielectric component extends to the support surface of the chuck (as described above) and does not require removal of the dielectric layer prior to pumping. In these situations The damaged dielectric component is removed and a new dielectric component is placed (typically pressed) into the opening in the panel. When an arc or plasma is formed near or in the heat transfer fluid passage, the electrostatic chuck can be repaired in a substantially economical manner compared to replacing an entire electrostatic chuck.

The foregoing description is directed to the embodiments of the present invention, and other embodiments of the invention may be derived without departing from the basic scope of the invention.

36‧‧‧Substrate processing system

38‧‧‧Processing room

40‧‧‧vacuum system

42‧‧‧Source plasma system

44‧‧‧Pressure plasma system

46‧‧‧ gas delivery system

48‧‧‧Remote plasma cleaning system

50‧‧‧ round cover

52‧‧‧ Plasma processing area

54‧‧‧Substrate

56‧‧‧Substrate support

58‧‧‧heating plate

60‧‧‧cooling plate

62‧‧‧ body parts

64‧‧‧ base

68‧‧‧Electrostatic suction cup

70‧‧‧Mediation

72‧‧‧Multi-blade regulating valve

74‧‧‧ gate valve

76‧‧‧ Turbo pump

78‧‧‧Top coil

80‧‧‧ side coil

82‧‧‧Top RF (RF) Source Generator

84‧‧‧ side radio frequency (RF) source generator

86‧‧‧RF (RF) bias generator

88~90‧‧‧match network

92‧‧‧ gas transmission line

92a‧‧‧Exhaust line

94‧‧‧ gas ring

95‧‧‧Insert/Remove openings

96‧‧‧Upper nozzle

98‧‧‧Exhaust port

100a~100e‧‧‧ gas source

102‧‧‧Electrostatic suction cup

104‧‧‧Substrate

106, 108‧‧‧ gas nozzle

112, 112a, 112b‧‧‧ valves

114‧‧‧vacuum lead line

120a~120b‧‧‧Flow Controller

132‧‧‧System Controller

134‧‧‧ processor

136‧‧‧ memory

220‧‧‧ Subject

222‧‧‧ Fluid distribution components

224‧‧‧ dielectric layer

228‧‧‧Support surface

230‧‧‧Multiple holes

332‧‧‧ top

334‧‧‧ channel

336‧‧‧ air chamber

338‧‧‧ catheter

402‧‧‧Electrostatic suction cup

404A‧‧‧ lower channel

404B‧‧‧Upper channel

406‧‧‧ ledge

408‧‧‧ top

410‧‧‧ channel

412‧‧‧Flange

414‧‧‧ lines

416‧‧‧ dielectric layer

422‧‧‧ Fluid distribution components

428‧‧‧Support surface

436‧‧ ‧ air chamber

440‧‧‧ tablet

442‧‧‧Electrical fittings

444‧‧‧ openings

446‧‧‧ first end

448‧‧‧ second end

450‧‧‧ holes

502‧‧‧Electrostatic suction cup

528‧‧‧ surface

534‧‧‧ channel

536‧‧‧ air chamber

542‧‧‧ dielectric tube

545‧‧‧ channel

548‧‧‧ second end

556‧‧‧

602‧‧‧Electrostatic suction cup

604‧‧‧ second end

606‧‧‧ first end

628‧‧‧Support surface

636‧‧‧ air chamber

642‧‧‧ dielectric tube

645‧‧‧ channel

656‧‧‧ notch

702‧‧‧Electrostatic suction cup

720‧‧‧ Subject

722‧‧‧ Fluid distribution components

724‧‧‧ dielectric layer

734‧‧‧ channel

740‧‧‧ tablet

742‧‧‧ dielectric tube

746‧‧‧ first end

748‧‧‧ second end

750‧‧‧ holes

760‧‧‧ dielectric end cap

762‧‧‧ openings

802‧‧‧Electrostatic suction cup

820‧‧‧ Subject

822‧‧‧ Fluid distribution components

824‧‧‧ fluid layer

828‧‧‧Support surface

834‧‧‧ channel

836‧‧ ‧ air chamber

840‧‧‧ tablet

844‧‧‧ openings

845‧‧‧ channel

870‧‧‧Porous dielectric section

902‧‧‧Electrostatic suction cup

920‧‧‧ Subject

922‧‧‧ Fluid distribution components

928‧‧‧Support surface

936‧‧‧ air chamber

940‧‧‧ tablet

944‧‧‧ openings

980‧‧‧ dielectric plug

982‧‧‧ hole

1002‧‧‧Electrostatic suction cup

1020‧‧‧ Subject

1022‧‧‧ Fluid distribution components

1028‧‧‧Support surface

1034‧‧‧ channel

1036‧‧‧ air chamber

1040‧‧‧ tablet

1040A, 1040B‧‧" ring

1042‧‧‧Dielectric cover

1044‧‧‧ openings

1082‧‧‧ Hole

1090‧‧‧Care pieces

The foregoing features of the present invention are disclosed in detail by reference to the embodiments of the invention and It is to be understood that the appended drawings are merely illustrative of the exemplary embodiments of the invention

1 is a view showing a plasma substrate processing system including an electrostatic chuck having one of fluid distribution elements according to various embodiments of the present invention; and FIG. 2 is a plan view of the electrostatic chuck shown in FIG. 1; The figure is a partial cross-sectional perspective view illustrating a portion of the electrostatic chuck shown in FIG. 2; and FIG. 3 is a cross-sectional view of the electrostatic chuck shown in FIG. 2 taken along line 3-3; Figure 4 is a cross-sectional view showing an embodiment of the electrostatic chuck fluid distribution member of the present invention; and Figure 5 is a cross-sectional view showing another embodiment of the electrostatic chuck fluid distribution member of the present invention; 6 is a cross-sectional view illustrating another embodiment of the electrostatic chuck fluid distribution member of the present invention; and FIG. 7 is a cross-sectional view illustrating still another embodiment of the electrostatic chuck fluid distribution member of the present invention; 8 is a cross-sectional view illustrating different embodiments of the electrostatic chuck fluid distribution component of the present invention; and FIG. 9 is a cross-sectional view illustrating different embodiments of the electrostatic chuck fluid distribution component of the present invention; and 10th The figure is a cross-sectional view illustrating various embodiments of the electrostatic chuck fluid distribution elements of the present invention.

Those skilled in the art should understand that the above-described embodiments and illustrations are used to describe the invention, but the invention is not limited to the drawings and the illustrated embodiments. The detailed description of the drawings and the detailed description of the drawings are not intended to limit the scope of the invention. Examples, equivalents and alternatives. The headings used herein are used for organizational purposes only and are not intended to limit the scope of the description or the scope of the patent application. The term "may" used throughout this document means the meaning of permission (ie, the possibility of performing an action). Rather than mean mandatory (ie, necessary). Similarly, the terms "including" and "including" are meant to include (but not Limited to). In addition, the term "one" means "at least one" unless otherwise specified.

36‧‧‧Substrate processing system

38‧‧‧Processing room

40‧‧‧vacuum system

42‧‧‧Source plasma system

44‧‧‧Pressure plasma system

46‧‧‧ gas delivery system

48‧‧‧Remote plasma cleaning system

50‧‧‧ round cover

52‧‧‧ Plasma processing area

54‧‧‧Substrate

56‧‧‧Substrate support

58‧‧‧heating plate

60‧‧‧cooling plate

62‧‧‧ body parts

64‧‧‧ base

68‧‧‧Electrostatic suction cup

70‧‧‧Mediation

72‧‧‧Multi-blade regulating valve

74‧‧‧ gate valve

76‧‧‧ Turbo pump

78‧‧‧Top coil

80‧‧‧ side coil

82‧‧‧Top RF (RF) Source Generator

84‧‧‧ side radio frequency (RF) source generator

86‧‧‧RF (RF) bias generator

88~90‧‧‧match network

92‧‧‧ gas transmission line

92a‧‧‧Exhaust line

94‧‧‧ gas ring

95‧‧‧Insert/Remove openings

96‧‧‧Upper nozzle

98‧‧‧Exhaust port

100a~100e‧‧‧ gas source

102‧‧‧Electrostatic suction cup

104‧‧‧Substrate

106, 108‧‧‧ gas nozzle

112, 112a, 112b‧‧‧ valves

114‧‧‧vacuum lead line

120a~120b‧‧‧Flow Controller

132‧‧‧System Controller

134‧‧‧ processor

136‧‧‧ memory

Claims (13)

A method for refreshing at least a portion of an electrostatic chuck having a flat plate and a first dielectric member, wherein the first dielectric member includes a tubular member, the tubular member is inserted into the flat plate, and the flat plate is Suitably disposed in a channel to define a plenum, wherein the first dielectric component provides at least a portion of a fluid channel coupled to the plenum, the method comprising: the slab from the electrostatic chuck Removing the first dielectric component, wherein the first dielectric component is configured to provide a fluid to a back surface of the substrate, the back surface of the substrate when the substrate is placed on the electrostatic chuck The electrostatic chuck; and the second dielectric member is replaced by a second dielectric member. The method of claim 1, wherein the second dielectric member is press-fitted into an opening of the plate. The method of claim 1, wherein at least a portion of a dielectric layer is removed to access the first dielectric component prior to removing the first dielectric component; and the second dielectric is used After the electrical component replaces the first dielectric component, at least a portion of the removed dielectric layer is replaced. The method of claim 1, wherein at least one of the first dielectric member or the second dielectric member comprises a ceramic. The method of claim 4, wherein the ceramic comprises alumina. The method of claim 3, further comprising grinding the substituted dielectric layer. The method of claim 1, wherein the removing step comprises drilling the first dielectric component. A method for refreshing at least a portion of an electrostatic chuck having a flat plate and a first dielectric member, wherein the first dielectric member includes a tubular member, the tubular member is inserted into the flat plate, and the flat plate is Suitably disposed in a channel to define a plenum, wherein the first dielectric component provides at least a portion of a fluid channel coupled to the plenum, the method comprising: removing a dielectric layer At least a portion to expose the first dielectric component, wherein the first dielectric component is configured to provide a fluid to a back surface of the substrate, the back of the substrate when the substrate is placed on the electrostatic chuck Facing the electrostatic chuck; removing the first dielectric member from the flat plate; replacing the first dielectric member with a second dielectric member; and replacing the dielectric with a new at least one portion of the dielectric layer At least a portion of the layer that has been removed. The method of claim 8, wherein the second dielectric member is press-fitted into an opening of the plate. The method of claim 8, wherein at least one of the first dielectric member or the second dielectric member comprises a ceramic. The method of claim 10, wherein the ceramic comprises alumina. The method of claim 8, further comprising grinding the substituted dielectric layer. The method of claim 8, wherein the removing step comprises drilling the first dielectric component.