TWI397100B - 電漿反應器及其使用方法 - Google Patents

電漿反應器及其使用方法 Download PDF

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Publication number
TWI397100B
TWI397100B TW095121069A TW95121069A TWI397100B TW I397100 B TWI397100 B TW I397100B TW 095121069 A TW095121069 A TW 095121069A TW 95121069 A TW95121069 A TW 95121069A TW I397100 B TWI397100 B TW I397100B
Authority
TW
Taiwan
Prior art keywords
electrode
plane
pair
chamber
plate
Prior art date
Application number
TW095121069A
Other languages
English (en)
Chinese (zh)
Other versions
TW200713389A (en
Inventor
Jisoo Kim
Dae-Han Choi
S M Reza Sadjadi
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200713389A publication Critical patent/TW200713389A/zh
Application granted granted Critical
Publication of TWI397100B publication Critical patent/TWI397100B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW095121069A 2005-06-13 2006-06-13 電漿反應器及其使用方法 TWI397100B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/152,016 US20060278339A1 (en) 2005-06-13 2005-06-13 Etch rate uniformity using the independent movement of electrode pieces

Publications (2)

Publication Number Publication Date
TW200713389A TW200713389A (en) 2007-04-01
TWI397100B true TWI397100B (zh) 2013-05-21

Family

ID=37067470

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095121069A TWI397100B (zh) 2005-06-13 2006-06-13 電漿反應器及其使用方法

Country Status (7)

Country Link
US (1) US20060278339A1 (ja)
JP (1) JP4970434B2 (ja)
KR (2) KR20130023390A (ja)
CN (1) CN101194340B (ja)
SG (1) SG162771A1 (ja)
TW (1) TWI397100B (ja)
WO (1) WO2006135924A1 (ja)

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* Cited by examiner, † Cited by third party
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US8012306B2 (en) 2006-02-15 2011-09-06 Lam Research Corporation Plasma processing reactor with multiple capacitive and inductive power sources
US20070221332A1 (en) * 2006-03-22 2007-09-27 Tokyo Electron Limited Plasma processing apparatus
KR100823302B1 (ko) * 2006-12-08 2008-04-17 주식회사 테스 플라즈마 처리 장치
US20080277064A1 (en) * 2006-12-08 2008-11-13 Tes Co., Ltd. Plasma processing apparatus
KR100978754B1 (ko) * 2008-04-03 2010-08-30 주식회사 테스 플라즈마 처리 장치
US20080156772A1 (en) * 2006-12-29 2008-07-03 Yunsang Kim Method and apparatus for wafer edge processing
US20170213734A9 (en) * 2007-03-30 2017-07-27 Alexei Marakhtanov Multifrequency capacitively coupled plasma etch chamber
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
US8382941B2 (en) * 2008-09-15 2013-02-26 Micron Technology, Inc. Plasma reactor with adjustable plasma electrodes and associated methods
US20130098390A1 (en) * 2011-10-25 2013-04-25 Infineon Technologies Ag Device for processing a carrier and a method for processing a carrier
US20140060739A1 (en) * 2012-08-31 2014-03-06 Rajinder Dhindsa Rf ground return in plasma processing systems and methods therefor
SG11201608771WA (en) * 2014-05-09 2016-11-29 Ev Group E Thallner Gmbh Method and device for plasma treatment of substrates
CN105789010B (zh) * 2014-12-24 2017-11-10 中微半导体设备(上海)有限公司 等离子体处理装置及等离子体分布的调节方法
CN110249416B (zh) 2017-04-07 2023-09-12 应用材料公司 在基板边缘上的等离子体密度控制

Citations (5)

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Publication number Priority date Publication date Assignee Title
JPS5723227A (en) * 1980-07-17 1982-02-06 Nippon Telegr & Teleph Corp <Ntt> Plasma etching device
JPH08321488A (ja) * 1995-05-26 1996-12-03 Sony Corp ドライエッチング方法及びマグネトロンｒｉｅ装置
JPH10289881A (ja) * 1997-04-15 1998-10-27 Kokusai Electric Co Ltd プラズマｃｖｄ装置
WO2002093616A1 (en) * 2001-05-16 2002-11-21 Lam Research Corporation Hollow anode plasma reactor and method
US20020170676A1 (en) * 2000-01-10 2002-11-21 Mitrovic Andrej S. Segmented electrode apparatus and method for plasma processing

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US5508881A (en) * 1994-02-01 1996-04-16 Quality Microcircuits Corporation Capacitors and interconnect lines for use with integrated circuits
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US5585012A (en) * 1994-12-15 1996-12-17 Applied Materials Inc. Self-cleaning polymer-free top electrode for parallel electrode etch operation
JP2953974B2 (ja) * 1995-02-03 1999-09-27 松下電子工業株式会社 半導体装置の製造方法
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JP2002359232A (ja) * 2001-05-31 2002-12-13 Tokyo Electron Ltd プラズマ処理装置
US6770166B1 (en) * 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
US6527911B1 (en) * 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
US6984288B2 (en) * 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
US6717193B2 (en) * 2001-10-09 2004-04-06 Koninklijke Philips Electronics N.V. Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same
US6841943B2 (en) * 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723227A (en) * 1980-07-17 1982-02-06 Nippon Telegr & Teleph Corp <Ntt> Plasma etching device
JPH08321488A (ja) * 1995-05-26 1996-12-03 Sony Corp ドライエッチング方法及びマグネトロンｒｉｅ装置
JPH10289881A (ja) * 1997-04-15 1998-10-27 Kokusai Electric Co Ltd プラズマｃｖｄ装置
US20020170676A1 (en) * 2000-01-10 2002-11-21 Mitrovic Andrej S. Segmented electrode apparatus and method for plasma processing
WO2002093616A1 (en) * 2001-05-16 2002-11-21 Lam Research Corporation Hollow anode plasma reactor and method

Also Published As

Publication number Publication date
TW200713389A (en) 2007-04-01
CN101194340B (zh) 2011-12-28
CN101194340A (zh) 2008-06-04
KR20080019225A (ko) 2008-03-03
KR20130023390A (ko) 2013-03-07
US20060278339A1 (en) 2006-12-14
SG162771A1 (en) 2010-07-29
JP4970434B2 (ja) 2012-07-04
WO2006135924A1 (en) 2006-12-21
WO2006135924A9 (en) 2007-02-22
KR101283830B1 (ko) 2013-07-08
JP2008544500A (ja) 2008-12-04

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