TWI394281B - 薄膜電晶體、薄膜電晶體面板及其製造方法 - Google Patents

薄膜電晶體、薄膜電晶體面板及其製造方法 Download PDF

Info

Publication number
TWI394281B
TWI394281B TW095108386A TW95108386A TWI394281B TW I394281 B TWI394281 B TW I394281B TW 095108386 A TW095108386 A TW 095108386A TW 95108386 A TW95108386 A TW 95108386A TW I394281 B TWI394281 B TW I394281B
Authority
TW
Taiwan
Prior art keywords
semiconductor
electrode
layer
film transistor
thin film
Prior art date
Application number
TW095108386A
Other languages
English (en)
Chinese (zh)
Other versions
TW200642088A (en
Inventor
崔埈厚
高俊哲
崔凡洛
Original Assignee
三星顯示器公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三星顯示器公司 filed Critical 三星顯示器公司
Publication of TW200642088A publication Critical patent/TW200642088A/zh
Application granted granted Critical
Publication of TWI394281B publication Critical patent/TWI394281B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW095108386A 2005-03-14 2006-03-13 薄膜電晶體、薄膜電晶體面板及其製造方法 TWI394281B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050021014A KR101133764B1 (ko) 2005-03-14 2005-03-14 박막 트랜지스터, 박막 트랜지스터 표시판 및 그 제조 방법

Publications (2)

Publication Number Publication Date
TW200642088A TW200642088A (en) 2006-12-01
TWI394281B true TWI394281B (zh) 2013-04-21

Family

ID=36969890

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095108386A TWI394281B (zh) 2005-03-14 2006-03-13 薄膜電晶體、薄膜電晶體面板及其製造方法

Country Status (5)

Country Link
US (1) US7935578B2 (https=)
JP (1) JP5214111B2 (https=)
KR (1) KR101133764B1 (https=)
CN (1) CN1841779B (https=)
TW (1) TWI394281B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101240651B1 (ko) * 2006-04-12 2013-03-08 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
JP5413549B2 (ja) * 2006-11-28 2014-02-12 カシオ計算機株式会社 薄膜トランジスタパネルおよびその製造方法
US20080157081A1 (en) * 2006-12-28 2008-07-03 Samsung Electronics Co., Ltd. Organic light emitting device and method for manufacturing the same
KR101293566B1 (ko) 2007-01-11 2013-08-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101406889B1 (ko) * 2007-12-24 2014-06-13 삼성디스플레이 주식회사 박막트랜지스터 및 그의 제조 방법
JP5308760B2 (ja) * 2008-09-30 2013-10-09 株式会社日立製作所 表示装置
DE102009007947B4 (de) * 2009-02-06 2014-08-14 Universität Stuttgart Verfahren zur Herstellung eines Aktiv-Matrix-OLED-Displays
CN107863355B (zh) * 2017-10-26 2022-01-25 上海中航光电子有限公司 一种显示基板、显示装置和显示基板的制造方法
CN109411531B (zh) * 2018-10-18 2022-04-19 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板、显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289300A (en) * 1991-02-04 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing electro-optical devices wherein the electrode is patterned on the modulation layer
US20020006689A1 (en) * 1995-12-14 2002-01-17 Mitsutoshi Miyasaka Thin film semiconductor device and method for producing the same
TW494378B (en) * 1999-12-28 2002-07-11 Seiko Epson Corp Electro-optical device, driving circuit and driving method of electro-optical device, and electronic apparatus
US20030109086A1 (en) * 2001-10-31 2003-06-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for field-effect transistor

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0473988A1 (en) * 1990-08-29 1992-03-11 International Business Machines Corporation Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region
JPH0562917A (ja) * 1991-09-04 1993-03-12 Canon Inc アモルフアスシリコン薄膜の製造法
JP3705733B2 (ja) * 1992-04-30 2005-10-12 株式会社東芝 半導体装置の製造方法
JP3281431B2 (ja) * 1992-12-14 2002-05-13 株式会社日立製作所 薄膜トランジスタ
JPH07268622A (ja) * 1994-03-01 1995-10-17 Applied Sci & Technol Inc マイクロ波プラズマ付着源
KR100218500B1 (ko) 1995-05-17 1999-09-01 윤종용 실리콘막 및 그 제조 방법과 이를 포함하는 박막트랜지스터 및 그 제조방법
JPH09139504A (ja) * 1995-11-14 1997-05-27 Sharp Corp コプラナ型薄膜トランジスタおよびその製造方法と、それを用いた液晶表示装置
KR100234892B1 (ko) * 1996-08-26 1999-12-15 구본준 액정표시장치의 구조 및 그 제조방법
WO1998047044A1 (en) * 1997-04-11 1998-10-22 Hitachi, Ltd. Liquid crystal display device
JP4300435B2 (ja) 1998-08-18 2009-07-22 ソニー株式会社 電気光学装置の製造方法、及び電気光学装置用の駆動基板の製造方法
US6096626A (en) * 1998-09-03 2000-08-01 Micron Technology, Inc. Semiconductor structures and semiconductor processing methods of forming silicon layers
JP2000111952A (ja) 1998-10-07 2000-04-21 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP2000124456A (ja) * 1998-10-12 2000-04-28 Shoka Kagi Kofun Yugenkoshi 高エネルギーギャップオフセット層構造を有するｔｆｔ素子
JP2000214484A (ja) 1999-01-27 2000-08-04 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
KR100317622B1 (ko) 1999-03-24 2001-12-22 구본준, 론 위라하디락사 박막트랜지스터 및 그의 제조방법
JP2001077372A (ja) * 1999-09-08 2001-03-23 Canon Inc 薄膜トランジスタ
KR100577410B1 (ko) * 1999-11-30 2006-05-08 엘지.필립스 엘시디 주식회사 엑스레이 영상 감지소자 및 그 제조방법
US6906346B2 (en) * 2000-07-24 2005-06-14 Matsushita Electric Industrial Co., Ltd. Semiconductor device, liquid crystal display device, EL display device, method for fabricating semiconductor thin film, and method for manufacturing the semiconductor device
SG136795A1 (en) * 2000-09-14 2007-11-29 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP2002294451A (ja) 2001-03-30 2002-10-09 Sony Corp 多結晶性半導体薄膜の形成方法、半導体装置の製造方法、並びにこれらの方法の実施に使用する装置
JP4644964B2 (ja) 2001-04-04 2011-03-09 ソニー株式会社 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法
JP2003309268A (ja) 2002-02-15 2003-10-31 Konica Minolta Holdings Inc 有機トランジスタ素子及びその製造方法
JP4182673B2 (ja) 2002-04-10 2008-11-19 セイコーエプソン株式会社 電気光学装置用基板の製造方法、及び電気光学装置の製造方法
KR100579182B1 (ko) 2002-10-30 2006-05-11 삼성에스디아이 주식회사 유기 전계 발광 표시 장치의 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289300A (en) * 1991-02-04 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing electro-optical devices wherein the electrode is patterned on the modulation layer
US20020006689A1 (en) * 1995-12-14 2002-01-17 Mitsutoshi Miyasaka Thin film semiconductor device and method for producing the same
TW494378B (en) * 1999-12-28 2002-07-11 Seiko Epson Corp Electro-optical device, driving circuit and driving method of electro-optical device, and electronic apparatus
US20030109086A1 (en) * 2001-10-31 2003-06-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for field-effect transistor

Also Published As

Publication number Publication date
KR20060099658A (ko) 2006-09-20
JP5214111B2 (ja) 2013-06-19
TW200642088A (en) 2006-12-01
KR101133764B1 (ko) 2012-04-09
CN1841779A (zh) 2006-10-04
US7935578B2 (en) 2011-05-03
JP2006261672A (ja) 2006-09-28
US20060202204A1 (en) 2006-09-14
CN1841779B (zh) 2012-01-04

Similar Documents

Publication Publication Date Title
US11482624B2 (en) Semiconductor device
US8405161B2 (en) Driving device for unit pixel of organic light emitting display and method of manufacturing the same
US20100155721A1 (en) Thin film transistor array substrate and method of fabricating the same
US7812895B2 (en) Thin film transistor (TFT) array panel with TFTs having varying leakage currents
US20090261712A1 (en) Organic light emitting diode display and method for manufacturing the same
US10825840B2 (en) Thin-film transistor panel
US7471350B2 (en) Array substrate for liquid crystal display and fabrication method thereof
TWI394281B (zh) 薄膜電晶體、薄膜電晶體面板及其製造方法
US20060157711A1 (en) Thin film transistor array panel
EP1970957A2 (en) Thin film transistor, an organic light emitting device including the same, and a manufacturing method thereof
US7612377B2 (en) Thin film transistor array panel with enhanced storage capacitors
US7911568B2 (en) Multi-layered thin films, thin film transistor array panel including the same, and method of manufacturing the panel
US8426863B2 (en) Thin film transistor; method of manufacturing same; and organic light emitting device including the thin film transistor
US20080179596A1 (en) Thin film transistor, organic light emitting device including thin film transistor, and manufacturing method thereof
US20060065894A1 (en) Thin film transistor array panel and manufacturing method thereof
US9252158B2 (en) Thin film transistor array panel and method of manufacturing the same
CN101221976B (zh) 有机发光装置及其制造方法
WO2025032953A1 (ja) 半導体装置の製造方法、表示装置の製造方法、及び半導体装置
KR20080054927A (ko) 유기 발광 표시 장치의 제조 방법

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees