TWI394012B - 微影裝置及元件製造方法 - Google Patents

微影裝置及元件製造方法 Download PDF

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Publication number
TWI394012B
TWI394012B TW097135652A TW97135652A TWI394012B TW I394012 B TWI394012 B TW I394012B TW 097135652 A TW097135652 A TW 097135652A TW 97135652 A TW97135652 A TW 97135652A TW I394012 B TWI394012 B TW I394012B
Authority
TW
Taiwan
Prior art keywords
radiation
wall
source
lithography apparatus
flow
Prior art date
Application number
TW097135652A
Other languages
English (en)
Chinese (zh)
Other versions
TW200921292A (en
Inventor
De Vijver Yuri Johannes Gabriel Van
Empel Tjarko Adriaan Rudolf Van
Schoot Jan Bernard Plechelmus Van
Gerardus Swinkels
Hendrikus Schimmel
Dzmitry Labetski
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW200921292A publication Critical patent/TW200921292A/zh
Application granted granted Critical
Publication of TWI394012B publication Critical patent/TWI394012B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0092—Housing of the apparatus for producing X-rays; Environment inside the housing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
TW097135652A 2007-09-17 2008-09-17 微影裝置及元件製造方法 TWI394012B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/898,933 US8115900B2 (en) 2007-09-17 2007-09-17 Lithographic apparatus and device manufacturing method

Publications (2)

Publication Number Publication Date
TW200921292A TW200921292A (en) 2009-05-16
TWI394012B true TWI394012B (zh) 2013-04-21

Family

ID=39925005

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097135652A TWI394012B (zh) 2007-09-17 2008-09-17 微影裝置及元件製造方法

Country Status (7)

Country Link
US (2) US8115900B2 (enExample)
JP (1) JP5393685B2 (enExample)
KR (1) KR101497595B1 (enExample)
CN (1) CN101802716B (enExample)
NL (1) NL1035943A1 (enExample)
TW (1) TWI394012B (enExample)
WO (1) WO2009038460A1 (enExample)

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US8115900B2 (en) * 2007-09-17 2012-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL2004085A (en) * 2009-03-11 2010-09-14 Asml Netherlands Bv Radiation source, lithographic apparatus, and device manufacturing method.
US8587768B2 (en) 2010-04-05 2013-11-19 Media Lario S.R.L. EUV collector system with enhanced EUV radiation collection
KR20130040883A (ko) * 2010-04-08 2013-04-24 에이에스엠엘 네델란즈 비.브이. Ｅｕⅴ 방사선 소스 및 ｅｕⅴ 방사선 생성 방법
US8344339B2 (en) * 2010-08-30 2013-01-01 Media Lario S.R.L. Source-collector module with GIC mirror and tin rod EUV LPP target system
US8258485B2 (en) * 2010-08-30 2012-09-04 Media Lario Srl Source-collector module with GIC mirror and xenon liquid EUV LPP target system
US9516730B2 (en) * 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
NL2010777A (en) * 2012-05-21 2013-11-25 Asml Netherlands Bv Lithographic apparatus.
US9148941B2 (en) * 2013-01-22 2015-09-29 Asml Netherlands B.V. Thermal monitor for an extreme ultraviolet light source
US10101664B2 (en) * 2014-11-01 2018-10-16 Kla-Tencor Corporation Apparatus and methods for optics protection from debris in plasma-based light source
US11397385B2 (en) 2016-06-17 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and a method of forming a particle shield
US10955749B2 (en) 2017-01-06 2021-03-23 Asml Netherlands B.V. Guiding device and associated system
JP7193459B2 (ja) * 2017-01-06 2022-12-20 エーエスエムエル ネザーランズ ビー．ブイ． 極端紫外線源（ｅｕｖ源）
NL2020238A (en) * 2017-01-06 2018-07-23 Asml Netherlands Bv Guiding device and associated system
DE102018208710A1 (de) 2018-06-04 2019-12-05 Carl Zeiss Smt Gmbh Blende zur Anordnung in einer Engstelle eines EUV-Beleuchtungsbündels
EP3798730A1 (en) 2019-09-30 2021-03-31 ASML Netherlands B.V. Radiation conduit
EP3919978A1 (en) * 2020-06-05 2021-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and a method of forming a particle shield
US11662668B2 (en) * 2021-08-30 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography contamination control
WO2024251485A1 (en) * 2023-06-09 2024-12-12 Asml Netherlands B.V. Lithographic apparatus, and method of expelling a contaminant in a lithographic apparatus

Citations (2)

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WO2002084406A1 (en) * 2001-04-17 2002-10-24 Koninklijke Philips Electronics N.V. Euv-transparent interface structure
US20070080307A1 (en) * 2005-10-07 2007-04-12 Xtreme Technologies Gmbh Arrangement for the suppression of unwanted spectral components in a plasma-based euv radiation source

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US6933513B2 (en) * 1999-11-05 2005-08-23 Asml Netherlands B.V. Gas flushing system for use in lithographic apparatus
US7026629B2 (en) * 2001-12-28 2006-04-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US6770895B2 (en) * 2002-11-21 2004-08-03 Asml Holding N.V. Method and apparatus for isolating light source gas from main chamber gas in a lithography tool
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Patent Citations (2)

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WO2002084406A1 (en) * 2001-04-17 2002-10-24 Koninklijke Philips Electronics N.V. Euv-transparent interface structure
US20070080307A1 (en) * 2005-10-07 2007-04-12 Xtreme Technologies Gmbh Arrangement for the suppression of unwanted spectral components in a plasma-based euv radiation source

Also Published As

Publication number Publication date
CN101802716B (zh) 2012-10-24
US20120147348A1 (en) 2012-06-14
CN101802716A (zh) 2010-08-11
KR101497595B1 (ko) 2015-03-04
US20090073396A1 (en) 2009-03-19
JP2010539700A (ja) 2010-12-16
WO2009038460A1 (en) 2009-03-26
NL1035943A1 (nl) 2009-03-18
US8749756B2 (en) 2014-06-10
TW200921292A (en) 2009-05-16
JP5393685B2 (ja) 2014-01-22
KR20100085045A (ko) 2010-07-28
US8115900B2 (en) 2012-02-14

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