JP5717761B2 - Euv放射源およびリソグラフィ装置 - Google Patents
Euv放射源およびリソグラフィ装置 Download PDFInfo
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- JP5717761B2 JP5717761B2 JP2012547467A JP2012547467A JP5717761B2 JP 5717761 B2 JP5717761 B2 JP 5717761B2 JP 2012547467 A JP2012547467 A JP 2012547467A JP 2012547467 A JP2012547467 A JP 2012547467A JP 5717761 B2 JP5717761 B2 JP 5717761B2
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- tube
- fuel
- euv radiation
- droplets
- radiation source
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- 230000005855 radiation Effects 0.000 title claims description 100
- 239000000446 fuel Substances 0.000 claims description 107
- 239000000758 substrate Substances 0.000 claims description 35
- 238000000059 patterning Methods 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- 238000007599 discharging Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 40
- 230000003287 optical effect Effects 0.000 description 20
- 238000005286 illumination Methods 0.000 description 8
- 230000035939 shock Effects 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 210000001747 pupil Anatomy 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/006—X-ray radiation generated from plasma being produced from a liquid or gas details of the ejection system, e.g. constructional details of the nozzle
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
本出願は、2010年1月7日に出願された米国仮出願(61/293143)の優先権の利益を享受する。その仮出願は参照によりその全体が本明細書に組み入れられる。
Claims (11)
- 燃料をプラズマ形成箇所に供給するよう構成された燃料サプライを備えるEUV放射源であって、
前記燃料サプライは、
燃料の液滴を放出するよう構成されたノズルと、
前記燃料の液滴を加速するよう構成された液滴加速器と、を含み、
本EUV放射源はさらに、
前記プラズマ形成箇所において、前記燃料サプライによって供給された前記燃料を照射するよう構成されたレーザ放射源を備え、
前記液滴加速器はチューブを含み、
前記チューブは、前記チューブを通じて流れるべきガスであって前記燃料の液滴を加速するべきガスを受けるよう構成され、
前記チューブにひとつ以上の開口が設けられており、前記ひとつ以上の開口は、前記チューブを通じて流れるべきガスであって前記燃料の液滴を加速するべきガスを導入するよう構成される、EUV放射源。 - 前記チューブは実質的に一定の断面を有する、請求項1に記載のEUV放射源。
- 前記チューブは、前記ノズルから離れるほど狭まるテーパ形状のチューブである、請求項1に記載のEUV放射源。
- 前記チューブは、前記ノズルに隣接する前記チューブの端で前記ガスを受けるよう構成される、請求項3に記載のEUV放射源。
- 前記チューブは、前記チューブを加熱するよう構成されたひとつ以上のヒータを備える、請求項1から4のいずれかに記載のEUV放射源。
- EUV放射を生成する方法であって、
リザーバからノズルを介して燃料の液滴を放出することと、
液滴加速器によって前記燃料の液滴を加速することと、
前記燃料の液滴が気化してEUV放射を生成するように、前記燃料の液滴にレーザビームを導くことと、を含み、
前記液滴加速器はチューブを含み、前記チューブを通じてガスが流れ、前記燃料の液滴を加速し、
前記チューブのひとつ以上の開口は、前記ガスを前記チューブに導入するために使用される、方法。 - 前記チューブは実質的に一定の断面を有する、請求項6に記載の方法。
- 前記チューブは、前記ノズルから離れるほど狭まるテーパ形状のチューブである、請求項6に記載の方法。
- 前記テーパ形状のチューブは、前記ノズルに隣接する前記テーパ形状のチューブの端で前記ガスを受ける、請求項8に記載の方法。
- 前記チューブはひとつ以上のヒータによって加熱される、請求項6から9のいずれかに記載の方法。
- 請求項1から5のいずれかに記載のEUV放射源と、
EUV放射にパターンを付与し、パターン付与された放射ビームを生成するよう構成されたパターニングデバイスを支持するよう構成されたサポートと、
前記パターン付与された放射ビームを基板に投影するよう構成された投影システムと、を備えるリソグラフィ装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29314310P | 2010-01-07 | 2010-01-07 | |
US61/293,143 | 2010-01-07 | ||
PCT/EP2010/068421 WO2011082891A1 (en) | 2010-01-07 | 2010-11-29 | Euv radiation source comprising a droplet accelerator and lithographic apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013516773A JP2013516773A (ja) | 2013-05-13 |
JP5717761B2 true JP5717761B2 (ja) | 2015-05-13 |
Family
ID=43576450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012547467A Active JP5717761B2 (ja) | 2010-01-07 | 2010-11-29 | Euv放射源およびリソグラフィ装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8598551B2 (ja) |
JP (1) | JP5717761B2 (ja) |
KR (1) | KR101710433B1 (ja) |
CN (1) | CN102696283B (ja) |
TW (1) | TWI510864B (ja) |
WO (1) | WO2011082891A1 (ja) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8598551B2 (en) * | 2010-01-07 | 2013-12-03 | Asml Netherlands B.V. | EUV radiation source comprising a droplet accelerator and lithographic apparatus |
US8686381B2 (en) | 2010-06-28 | 2014-04-01 | Media Lario S.R.L. | Source-collector module with GIC mirror and tin vapor LPP target system |
NL2009117A (en) * | 2011-08-05 | 2013-02-06 | Asml Netherlands Bv | Radiation source and method for lithographic apparatus and device manufacturing method. |
WO2013029897A1 (en) * | 2011-09-02 | 2013-03-07 | Asml Netherlands B.V. | Radiation source and lithographic apparatus |
WO2013124101A2 (en) * | 2012-02-22 | 2013-08-29 | Asml Netherlands B.V. | Fuel stream generator, source collector apparatus and lithographic apparatus |
KR102072064B1 (ko) | 2012-05-21 | 2020-01-31 | 에이에스엠엘 네델란즈 비.브이. | 방사선 소스 |
KR20140036538A (ko) * | 2012-09-17 | 2014-03-26 | 삼성전자주식회사 | 극자외선 생성 장치, 이를 포함하는 노광 장치 및 이러한 노광 장치를 사용해서 제조된 전자 디바이스 |
NL2011533A (en) * | 2012-10-31 | 2014-05-06 | Asml Netherlands Bv | Method and apparatus for generating radiation. |
CN103079327B (zh) * | 2013-01-05 | 2015-09-09 | 中国科学院微电子研究所 | 一种靶源预整形增强的极紫外光发生装置 |
WO2014120985A1 (en) * | 2013-01-30 | 2014-08-07 | Kla-Tencor Corporation | Euv light source using cryogenic droplet targets in mask inspection |
KR102115543B1 (ko) * | 2013-04-26 | 2020-05-26 | 삼성전자주식회사 | 극자외선 광원 장치 |
US9585236B2 (en) | 2013-05-03 | 2017-02-28 | Media Lario Srl | Sn vapor EUV LLP source system for EUV lithography |
WO2015097820A1 (ja) | 2013-12-26 | 2015-07-02 | ギガフォトン株式会社 | ターゲット生成装置 |
WO2016131601A1 (en) | 2015-02-19 | 2016-08-25 | Asml Netherlands B.V. | Radiation source |
US9832854B2 (en) * | 2015-08-12 | 2017-11-28 | Asml Netherlands B.V. | Systems and methods for stabilization of droplet-plasma interaction via laser energy modulation |
JP6751163B2 (ja) * | 2017-01-30 | 2020-09-02 | ギガフォトン株式会社 | 極端紫外光生成装置 |
JP7078706B2 (ja) | 2017-07-06 | 2022-05-31 | インテグリス・インコーポレーテッド | 炭化ケイ素フィルター膜および使用方法 |
US11013097B2 (en) * | 2017-11-15 | 2021-05-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for generating extreme ultraviolet radiation |
US10631392B2 (en) * | 2018-04-30 | 2020-04-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV collector contamination prevention |
US11550233B2 (en) * | 2018-08-14 | 2023-01-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography system and operation method thereof |
US11109474B2 (en) | 2019-09-24 | 2021-08-31 | Samsung Electronics Co., Ltd. | Extreme ultraviolet generation apparatus |
TW202209933A (zh) | 2020-06-29 | 2022-03-01 | 荷蘭商Asml荷蘭公司 | 在euv源之液滴產生器中加速液滴之方法及其設備 |
JP2022059264A (ja) | 2020-10-01 | 2022-04-13 | ギガフォトン株式会社 | 極端紫外光生成装置及び電子デバイスの製造方法 |
KR20220077739A (ko) | 2020-12-02 | 2022-06-09 | 삼성전자주식회사 | 액적 가속 조립체 및 이를 포함하는 EUV(Extreme Ultra-Violet) 리소그래피 장치 |
IL308073A (en) | 2021-06-25 | 2023-12-01 | Asml Netherlands Bv | Apparatus and method for producing drops of target material in an EUV source |
WO2024120835A1 (en) | 2022-12-09 | 2024-06-13 | Asml Netherlands B.V. | Controlled droplet generator nozzle environment to improve reliability |
Family Cites Families (12)
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US6304630B1 (en) * | 1999-12-24 | 2001-10-16 | U.S. Philips Corporation | Method of generating EUV radiation, method of manufacturing a device by means of said radiation, EUV radiation source unit, and lithographic projection apparatus provided with such a radiation source unit |
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TW589924B (en) * | 2001-04-06 | 2004-06-01 | Fraunhofer Ges Forschung | Process and device for producing extreme ultraviolet ray/weak x-ray |
US6738452B2 (en) * | 2002-05-28 | 2004-05-18 | Northrop Grumman Corporation | Gasdynamically-controlled droplets as the target in a laser-plasma extreme ultraviolet light source |
SE523503C2 (sv) * | 2002-07-23 | 2004-04-27 | Jettec Ab | Kapillärrör |
SG129259A1 (en) * | 2002-10-03 | 2007-02-26 | Asml Netherlands Bv | Radiation source lithographic apparatus, and device manufacturing method |
JP4408704B2 (ja) * | 2004-01-07 | 2010-02-03 | 株式会社小松製作所 | ジェットノズル及びそれを用いた光源装置 |
US7208746B2 (en) * | 2004-07-14 | 2007-04-24 | Asml Netherlands B.V. | Radiation generating device, lithographic apparatus, device manufacturing method and device manufactured thereby |
JP4628122B2 (ja) * | 2005-02-04 | 2011-02-09 | 株式会社小松製作所 | 極端紫外光源装置用ノズル |
US7462851B2 (en) * | 2005-09-23 | 2008-12-09 | Asml Netherlands B.V. | Electromagnetic radiation source, lithographic apparatus, device manufacturing method and device manufactured thereby |
NL1035846A1 (nl) * | 2007-08-23 | 2009-02-24 | Asml Netherlands Bv | Radiation source. |
US8598551B2 (en) * | 2010-01-07 | 2013-12-03 | Asml Netherlands B.V. | EUV radiation source comprising a droplet accelerator and lithographic apparatus |
-
2010
- 2010-11-29 US US13/520,993 patent/US8598551B2/en active Active
- 2010-11-29 JP JP2012547467A patent/JP5717761B2/ja active Active
- 2010-11-29 WO PCT/EP2010/068421 patent/WO2011082891A1/en active Application Filing
- 2010-11-29 CN CN201080059731.3A patent/CN102696283B/zh active Active
- 2010-11-29 KR KR1020127017646A patent/KR101710433B1/ko active IP Right Grant
- 2010-12-15 TW TW099144076A patent/TWI510864B/zh active
Also Published As
Publication number | Publication date |
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KR101710433B1 (ko) | 2017-02-27 |
US20120280149A1 (en) | 2012-11-08 |
US8598551B2 (en) | 2013-12-03 |
JP2013516773A (ja) | 2013-05-13 |
WO2011082891A1 (en) | 2011-07-14 |
TW201131316A (en) | 2011-09-16 |
CN102696283B (zh) | 2015-07-08 |
KR20120112521A (ko) | 2012-10-11 |
TWI510864B (zh) | 2015-12-01 |
CN102696283A (zh) | 2012-09-26 |
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