KR101497595B1 - 리소그래피 장치 및 디바이스 제조 방법 - Google Patents

리소그래피 장치 및 디바이스 제조 방법 Download PDF

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KR101497595B1
KR101497595B1 KR1020107008430A KR20107008430A KR101497595B1 KR 101497595 B1 KR101497595 B1 KR 101497595B1 KR 1020107008430 A KR1020107008430 A KR 1020107008430A KR 20107008430 A KR20107008430 A KR 20107008430A KR 101497595 B1 KR101497595 B1 KR 101497595B1
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South Korea
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radiation
wall
radiation source
illumination system
source
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KR20100085045A (ko
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유리 요한네스 가브리엘 반 데 비베르
타르코 아드리안 루돌프 반 엠펠
얀 베르나르트 플레첼무스 반 슈트
게라르두스 후베르투스 페트루스 마리아 스빈켈스
헨드리쿠스 히스베르투스 쉼멜
드미트리 라베츠키
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에이에스엠엘 네델란즈 비.브이.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0092—Housing of the apparatus for producing X-rays; Environment inside the housing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
KR1020107008430A 2007-09-17 2008-09-17 리소그래피 장치 및 디바이스 제조 방법 Active KR101497595B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/898,933 2007-09-17
US11/898,933 US8115900B2 (en) 2007-09-17 2007-09-17 Lithographic apparatus and device manufacturing method
PCT/NL2008/050611 WO2009038460A1 (en) 2007-09-17 2008-09-17 Lithographic apparatus and device manufacturing method

Publications (2)

Publication Number Publication Date
KR20100085045A KR20100085045A (ko) 2010-07-28
KR101497595B1 true KR101497595B1 (ko) 2015-03-04

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KR1020107008430A Active KR101497595B1 (ko) 2007-09-17 2008-09-17 리소그래피 장치 및 디바이스 제조 방법

Country Status (7)

Country Link
US (2) US8115900B2 (enExample)
JP (1) JP5393685B2 (enExample)
KR (1) KR101497595B1 (enExample)
CN (1) CN101802716B (enExample)
NL (1) NL1035943A1 (enExample)
TW (1) TWI394012B (enExample)
WO (1) WO2009038460A1 (enExample)

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US8587768B2 (en) * 2010-04-05 2013-11-19 Media Lario S.R.L. EUV collector system with enhanced EUV radiation collection
KR20130040883A (ko) * 2010-04-08 2013-04-24 에이에스엠엘 네델란즈 비.브이. Ｅｕⅴ 방사선 소스 및 ｅｕⅴ 방사선 생성 방법
US8258485B2 (en) * 2010-08-30 2012-09-04 Media Lario Srl Source-collector module with GIC mirror and xenon liquid EUV LPP target system
US8344339B2 (en) * 2010-08-30 2013-01-01 Media Lario S.R.L. Source-collector module with GIC mirror and tin rod EUV LPP target system
US9516730B2 (en) * 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
JP6253641B2 (ja) * 2012-05-21 2017-12-27 エーエスエムエル ネザーランズ ビー．ブイ． リフレクタ、ペリクル、リソグラフィマスク、膜、スペクトル純度フィルタ、および、装置
US9148941B2 (en) * 2013-01-22 2015-09-29 Asml Netherlands B.V. Thermal monitor for an extreme ultraviolet light source
US10101664B2 (en) * 2014-11-01 2018-10-16 Kla-Tencor Corporation Apparatus and methods for optics protection from debris in plasma-based light source
US11397385B2 (en) 2016-06-17 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and a method of forming a particle shield
WO2018127565A2 (en) * 2017-01-06 2018-07-12 Asml Netherlands B.V. Guiding device and associated system
JP7193459B2 (ja) * 2017-01-06 2022-12-20 エーエスエムエル ネザーランズ ビー．ブイ． 極端紫外線源（ｅｕｖ源）
US10955749B2 (en) 2017-01-06 2021-03-23 Asml Netherlands B.V. Guiding device and associated system
DE102018208710A1 (de) 2018-06-04 2019-12-05 Carl Zeiss Smt Gmbh Blende zur Anordnung in einer Engstelle eines EUV-Beleuchtungsbündels
EP3798730A1 (en) * 2019-09-30 2021-03-31 ASML Netherlands B.V. Radiation conduit
EP3919978A1 (en) * 2020-06-05 2021-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and a method of forming a particle shield
US11662668B2 (en) 2021-08-30 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography contamination control
WO2024251485A1 (en) * 2023-06-09 2024-12-12 Asml Netherlands B.V. Lithographic apparatus, and method of expelling a contaminant in a lithographic apparatus

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Also Published As

Publication number Publication date
US20120147348A1 (en) 2012-06-14
JP5393685B2 (ja) 2014-01-22
TWI394012B (zh) 2013-04-21
US8749756B2 (en) 2014-06-10
JP2010539700A (ja) 2010-12-16
CN101802716B (zh) 2012-10-24
US20090073396A1 (en) 2009-03-19
WO2009038460A1 (en) 2009-03-26
US8115900B2 (en) 2012-02-14
KR20100085045A (ko) 2010-07-28
NL1035943A1 (nl) 2009-03-18
CN101802716A (zh) 2010-08-11
TW200921292A (en) 2009-05-16

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