JP5393685B2 - リソグラフィ装置および放射源 - Google Patents

リソグラフィ装置および放射源 Download PDF

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Publication number
JP5393685B2
JP5393685B2 JP2010524802A JP2010524802A JP5393685B2 JP 5393685 B2 JP5393685 B2 JP 5393685B2 JP 2010524802 A JP2010524802 A JP 2010524802A JP 2010524802 A JP2010524802 A JP 2010524802A JP 5393685 B2 JP5393685 B2 JP 5393685B2
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Japan
Prior art keywords
radiation
wall
radiation source
lithographic apparatus
flow
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JP2010524802A
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English (en)
Japanese (ja)
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JP2010539700A5 (enExample
JP2010539700A (ja
Inventor
デ ヴィホヴァー，ユリ，ヨハネス，ガブリエル ヴァン
エンペル，ジャーコ，アドリアーン，ルドルフ ヴァン
スホート，ジャン，ベルナルド，プレヘルムス ヴァン
スウィンケルズ，ゲラルドス，ヒューベルタス，ペトラス，マリア
シメール，ヘンドリカス，ジスバータス
ラベッツスキ，ドズミトリ
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エーエスエムエル ネザーランズ ビー．ブイ．
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0092—Housing of the apparatus for producing X-rays; Environment inside the housing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
JP2010524802A 2007-09-17 2008-09-17 リソグラフィ装置および放射源 Active JP5393685B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/898,933 2007-09-17
US11/898,933 US8115900B2 (en) 2007-09-17 2007-09-17 Lithographic apparatus and device manufacturing method
PCT/NL2008/050611 WO2009038460A1 (en) 2007-09-17 2008-09-17 Lithographic apparatus and device manufacturing method

Publications (3)

Publication Number Publication Date
JP2010539700A JP2010539700A (ja) 2010-12-16
JP2010539700A5 JP2010539700A5 (enExample) 2011-11-04
JP5393685B2 true JP5393685B2 (ja) 2014-01-22

Family

ID=39925005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010524802A Active JP5393685B2 (ja) 2007-09-17 2008-09-17 リソグラフィ装置および放射源

Country Status (7)

Country Link
US (2) US8115900B2 (enExample)
JP (1) JP5393685B2 (enExample)
KR (1) KR101497595B1 (enExample)
CN (1) CN101802716B (enExample)
NL (1) NL1035943A1 (enExample)
TW (1) TWI394012B (enExample)
WO (1) WO2009038460A1 (enExample)

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US8115900B2 (en) * 2007-09-17 2012-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL2004085A (en) * 2009-03-11 2010-09-14 Asml Netherlands Bv Radiation source, lithographic apparatus, and device manufacturing method.
US8587768B2 (en) 2010-04-05 2013-11-19 Media Lario S.R.L. EUV collector system with enhanced EUV radiation collection
KR20130040883A (ko) * 2010-04-08 2013-04-24 에이에스엠엘 네델란즈 비.브이. Ｅｕⅴ 방사선 소스 및 ｅｕⅴ 방사선 생성 방법
US8344339B2 (en) * 2010-08-30 2013-01-01 Media Lario S.R.L. Source-collector module with GIC mirror and tin rod EUV LPP target system
US8258485B2 (en) * 2010-08-30 2012-09-04 Media Lario Srl Source-collector module with GIC mirror and xenon liquid EUV LPP target system
US9516730B2 (en) * 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
NL2010777A (en) * 2012-05-21 2013-11-25 Asml Netherlands Bv Lithographic apparatus.
US9148941B2 (en) * 2013-01-22 2015-09-29 Asml Netherlands B.V. Thermal monitor for an extreme ultraviolet light source
US10101664B2 (en) * 2014-11-01 2018-10-16 Kla-Tencor Corporation Apparatus and methods for optics protection from debris in plasma-based light source
US11397385B2 (en) 2016-06-17 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and a method of forming a particle shield
US10955749B2 (en) 2017-01-06 2021-03-23 Asml Netherlands B.V. Guiding device and associated system
JP7193459B2 (ja) * 2017-01-06 2022-12-20 エーエスエムエル ネザーランズ ビー．ブイ． 極端紫外線源（ｅｕｖ源）
NL2020238A (en) * 2017-01-06 2018-07-23 Asml Netherlands Bv Guiding device and associated system
DE102018208710A1 (de) 2018-06-04 2019-12-05 Carl Zeiss Smt Gmbh Blende zur Anordnung in einer Engstelle eines EUV-Beleuchtungsbündels
EP3798730A1 (en) 2019-09-30 2021-03-31 ASML Netherlands B.V. Radiation conduit
EP3919978A1 (en) * 2020-06-05 2021-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and a method of forming a particle shield
US11662668B2 (en) * 2021-08-30 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography contamination control
WO2024251485A1 (en) * 2023-06-09 2024-12-12 Asml Netherlands B.V. Lithographic apparatus, and method of expelling a contaminant in a lithographic apparatus

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US6219368B1 (en) * 1999-02-12 2001-04-17 Lambda Physik Gmbh Beam delivery system for molecular fluorine (F2) laser
US6933513B2 (en) * 1999-11-05 2005-08-23 Asml Netherlands B.V. Gas flushing system for use in lithographic apparatus
JP2004519868A (ja) * 2001-04-17 2004-07-02 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ Ｅｕｖに透明な境界構造
US7026629B2 (en) * 2001-12-28 2006-04-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3703447B2 (ja) * 2002-09-06 2005-10-05 キヤノン株式会社 差動排気システム及び露光装置
US6809327B2 (en) * 2002-10-29 2004-10-26 Intel Corporation EUV source box
US6770895B2 (en) * 2002-11-21 2004-08-03 Asml Holding N.V. Method and apparatus for isolating light source gas from main chamber gas in a lithography tool
US6919573B2 (en) * 2003-03-20 2005-07-19 Asml Holding N.V Method and apparatus for recycling gases used in a lithography tool
JP2005317611A (ja) * 2004-04-27 2005-11-10 Canon Inc 露光方法及び装置
JP2006049815A (ja) * 2004-07-02 2006-02-16 Canon Inc 露光装置
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JP4578901B2 (ja) * 2004-09-09 2010-11-10 株式会社小松製作所 極端紫外光源装置
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Also Published As

Publication number Publication date
CN101802716B (zh) 2012-10-24
US20120147348A1 (en) 2012-06-14
TWI394012B (zh) 2013-04-21
CN101802716A (zh) 2010-08-11
KR101497595B1 (ko) 2015-03-04
US20090073396A1 (en) 2009-03-19
JP2010539700A (ja) 2010-12-16
WO2009038460A1 (en) 2009-03-26
NL1035943A1 (nl) 2009-03-18
US8749756B2 (en) 2014-06-10
TW200921292A (en) 2009-05-16
KR20100085045A (ko) 2010-07-28
US8115900B2 (en) 2012-02-14

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