TWI392755B - Sputtering method and sputtering device - Google Patents
Sputtering method and sputtering device Download PDFInfo
- Publication number
- TWI392755B TWI392755B TW096101141A TW96101141A TWI392755B TW I392755 B TWI392755 B TW I392755B TW 096101141 A TW096101141 A TW 096101141A TW 96101141 A TW96101141 A TW 96101141A TW I392755 B TWI392755 B TW I392755B
- Authority
- TW
- Taiwan
- Prior art keywords
- waveform
- voltage
- output
- circuit
- absolute value
- Prior art date
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 48
- 238000010891 electric arc Methods 0.000 claims description 67
- 238000001514 detection method Methods 0.000 claims description 56
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 15
- 230000010355 oscillation Effects 0.000 description 12
- 239000010408 film Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006003444A JP4963023B2 (ja) | 2006-01-11 | 2006-01-11 | スパッタリング方法及びスパッタリング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200732488A TW200732488A (en) | 2007-09-01 |
| TWI392755B true TWI392755B (zh) | 2013-04-11 |
Family
ID=38256310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096101141A TWI392755B (zh) | 2006-01-11 | 2007-01-11 | Sputtering method and sputtering device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4963023B2 (enrdf_load_stackoverflow) |
| KR (1) | KR101028050B1 (enrdf_load_stackoverflow) |
| CN (1) | CN101370959B (enrdf_load_stackoverflow) |
| TW (1) | TWI392755B (enrdf_load_stackoverflow) |
| WO (1) | WO2007080905A1 (enrdf_load_stackoverflow) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5016819B2 (ja) * | 2006-01-11 | 2012-09-05 | 株式会社アルバック | スパッタリング方法及びスパッタリング装置 |
| CN101784694B (zh) * | 2007-08-20 | 2012-08-29 | 株式会社爱发科 | 溅射方法 |
| JP5429771B2 (ja) * | 2008-05-26 | 2014-02-26 | 株式会社アルバック | スパッタリング方法 |
| US9613784B2 (en) | 2008-07-17 | 2017-04-04 | Mks Instruments, Inc. | Sputtering system and method including an arc detection |
| JP5363166B2 (ja) * | 2009-03-31 | 2013-12-11 | 株式会社アルバック | スパッタリング方法 |
| DE102010031568B4 (de) | 2010-07-20 | 2014-12-11 | TRUMPF Hüttinger GmbH + Co. KG | Arclöschanordnung und Verfahren zum Löschen von Arcs |
| CN103348038B (zh) * | 2011-02-08 | 2015-05-20 | 夏普株式会社 | 磁控溅射装置、磁控溅射装置的控制方法和成膜方法 |
| DE102013110883B3 (de) * | 2013-10-01 | 2015-01-15 | TRUMPF Hüttinger GmbH + Co. KG | Vorrichtung und Verfahren zur Überwachung einer Entladung in einem Plasmaprozess |
| EP2905801B1 (en) | 2014-02-07 | 2019-05-22 | TRUMPF Huettinger Sp. Z o. o. | Method of monitoring the discharge in a plasma process and monitoring device for monitoring the discharge in a plasma |
| TWI617687B (zh) * | 2014-12-04 | 2018-03-11 | 財團法人金屬工業研究發展中心 | 用於濺鍍設備之監測方法及監測系統 |
| KR101757818B1 (ko) | 2015-10-12 | 2017-07-26 | 세메스 주식회사 | 펄스화된 고주파 전력 모니터링 장치 및 그를 포함하는 기판 처리 장치 |
| US11004660B2 (en) | 2018-11-30 | 2021-05-11 | Eagle Harbor Technologies, Inc. | Variable output impedance RF generator |
| JP2019189913A (ja) * | 2018-04-26 | 2019-10-31 | 京浜ラムテック株式会社 | スパッタリングカソード、スパッタリングカソード集合体およびスパッタリング装置 |
| JP7195504B2 (ja) * | 2020-07-31 | 2022-12-26 | 国立研究開発法人日本原子力研究開発機構 | 真空部品、これを用いた真空排気方法 |
| DE202021103238U1 (de) * | 2021-06-16 | 2021-06-22 | TRUMPF Hüttinger GmbH + Co. KG | Signalverarbeitungssystem und Leistungsversorgungseinrichtung mit einem Signalverarbeitungssystem |
| CN118984519A (zh) * | 2024-08-05 | 2024-11-19 | 上海硬石科技有限公司 | 一种用于辅助等离子体激发电路装置 |
| CN118890759A (zh) * | 2024-08-09 | 2024-11-01 | 上海硬石科技有限公司 | 一种应用于交流等离子体激发电源中的电弧管理系统 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11200036A (ja) * | 1998-01-16 | 1999-07-27 | Toshiba Corp | 薄膜の製造方法、及びこのためのスパッタリング装置 |
| TW460602B (en) * | 1997-04-21 | 2001-10-21 | Tokyo Electron Ltd | Method and apparatus for ionized sputtering of materials |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4441206C2 (de) * | 1994-11-19 | 1996-09-26 | Leybold Ag | Einrichtung für die Unterdrückung von Überschlägen in Kathoden-Zerstäubungseinrichtungen |
| JPH09170079A (ja) * | 1995-12-18 | 1997-06-30 | Asahi Glass Co Ltd | スパッタリング方法および装置 |
| JP2001003166A (ja) * | 1999-04-23 | 2001-01-09 | Nippon Sheet Glass Co Ltd | 基体表面に被膜を被覆する方法およびその方法による基体 |
| JP2002012969A (ja) * | 2000-07-03 | 2002-01-15 | Sanyo Shinku Kogyo Kk | スパッタリング装置の制御方法 |
| JP4780972B2 (ja) * | 2004-03-11 | 2011-09-28 | 株式会社アルバック | スパッタリング装置 |
-
2006
- 2006-01-11 JP JP2006003444A patent/JP4963023B2/ja active Active
-
2007
- 2007-01-11 KR KR1020087016805A patent/KR101028050B1/ko active Active
- 2007-01-11 CN CN2007800022189A patent/CN101370959B/zh active Active
- 2007-01-11 TW TW096101141A patent/TWI392755B/zh active
- 2007-01-11 WO PCT/JP2007/050200 patent/WO2007080905A1/ja active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW460602B (en) * | 1997-04-21 | 2001-10-21 | Tokyo Electron Ltd | Method and apparatus for ionized sputtering of materials |
| JPH11200036A (ja) * | 1998-01-16 | 1999-07-27 | Toshiba Corp | 薄膜の製造方法、及びこのためのスパッタリング装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007080905A1 (ja) | 2007-07-19 |
| KR20080078053A (ko) | 2008-08-26 |
| CN101370959B (zh) | 2011-01-12 |
| TW200732488A (en) | 2007-09-01 |
| JP4963023B2 (ja) | 2012-06-27 |
| KR101028050B1 (ko) | 2011-04-08 |
| CN101370959A (zh) | 2009-02-18 |
| JP2007186725A (ja) | 2007-07-26 |
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