KR101028050B1 - 스퍼터링 방법 및 스퍼터링 장치 - Google Patents

스퍼터링 방법 및 스퍼터링 장치 Download PDF

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KR101028050B1
KR101028050B1 KR1020087016805A KR20087016805A KR101028050B1 KR 101028050 B1 KR101028050 B1 KR 101028050B1 KR 1020087016805 A KR1020087016805 A KR 1020087016805A KR 20087016805 A KR20087016805 A KR 20087016805A KR 101028050 B1 KR101028050 B1 KR 101028050B1
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waveform
voltage
absolute value
output
circuit
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Korean (ko)
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KR20080078053A (ko
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모토시 코바야시
하지메 나카무라
요시쿠니 호리시따
아쯔시 오노
시게미쯔 사토우
토시오 나카지마
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가부시키가이샤 알박
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
KR1020087016805A 2006-01-11 2007-01-11 스퍼터링 방법 및 스퍼터링 장치 Active KR101028050B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00003444 2006-01-11
JP2006003444A JP4963023B2 (ja) 2006-01-11 2006-01-11 スパッタリング方法及びスパッタリング装置

Publications (2)

Publication Number Publication Date
KR20080078053A KR20080078053A (ko) 2008-08-26
KR101028050B1 true KR101028050B1 (ko) 2011-04-08

Family

ID=38256310

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087016805A Active KR101028050B1 (ko) 2006-01-11 2007-01-11 스퍼터링 방법 및 스퍼터링 장치

Country Status (5)

Country Link
JP (1) JP4963023B2 (enrdf_load_stackoverflow)
KR (1) KR101028050B1 (enrdf_load_stackoverflow)
CN (1) CN101370959B (enrdf_load_stackoverflow)
TW (1) TWI392755B (enrdf_load_stackoverflow)
WO (1) WO2007080905A1 (enrdf_load_stackoverflow)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5016819B2 (ja) * 2006-01-11 2012-09-05 株式会社アルバック スパッタリング方法及びスパッタリング装置
CN101784694B (zh) * 2007-08-20 2012-08-29 株式会社爱发科 溅射方法
JP5429771B2 (ja) * 2008-05-26 2014-02-26 株式会社アルバック スパッタリング方法
US9613784B2 (en) 2008-07-17 2017-04-04 Mks Instruments, Inc. Sputtering system and method including an arc detection
JP5363166B2 (ja) * 2009-03-31 2013-12-11 株式会社アルバック スパッタリング方法
DE102010031568B4 (de) 2010-07-20 2014-12-11 TRUMPF Hüttinger GmbH + Co. KG Arclöschanordnung und Verfahren zum Löschen von Arcs
CN103348038B (zh) * 2011-02-08 2015-05-20 夏普株式会社 磁控溅射装置、磁控溅射装置的控制方法和成膜方法
DE102013110883B3 (de) * 2013-10-01 2015-01-15 TRUMPF Hüttinger GmbH + Co. KG Vorrichtung und Verfahren zur Überwachung einer Entladung in einem Plasmaprozess
EP2905801B1 (en) 2014-02-07 2019-05-22 TRUMPF Huettinger Sp. Z o. o. Method of monitoring the discharge in a plasma process and monitoring device for monitoring the discharge in a plasma
TWI617687B (zh) * 2014-12-04 2018-03-11 財團法人金屬工業研究發展中心 用於濺鍍設備之監測方法及監測系統
KR101757818B1 (ko) 2015-10-12 2017-07-26 세메스 주식회사 펄스화된 고주파 전력 모니터링 장치 및 그를 포함하는 기판 처리 장치
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
JP2019189913A (ja) * 2018-04-26 2019-10-31 京浜ラムテック株式会社 スパッタリングカソード、スパッタリングカソード集合体およびスパッタリング装置
JP7195504B2 (ja) * 2020-07-31 2022-12-26 国立研究開発法人日本原子力研究開発機構 真空部品、これを用いた真空排気方法
DE202021103238U1 (de) * 2021-06-16 2021-06-22 TRUMPF Hüttinger GmbH + Co. KG Signalverarbeitungssystem und Leistungsversorgungseinrichtung mit einem Signalverarbeitungssystem
CN118984519A (zh) * 2024-08-05 2024-11-19 上海硬石科技有限公司 一种用于辅助等离子体激发电路装置
CN118890759A (zh) * 2024-08-09 2024-11-01 上海硬石科技有限公司 一种应用于交流等离子体激发电源中的电弧管理系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08225935A (ja) * 1994-11-19 1996-09-03 Leybold Ag 陰極スパッタリング装置のフラッシュオ−バ抑圧装置
JPH09170079A (ja) * 1995-12-18 1997-06-30 Asahi Glass Co Ltd スパッタリング方法および装置
JP2001003166A (ja) 1999-04-23 2001-01-09 Nippon Sheet Glass Co Ltd 基体表面に被膜を被覆する方法およびその方法による基体
JP2002012969A (ja) 2000-07-03 2002-01-15 Sanyo Shinku Kogyo Kk スパッタリング装置の制御方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998048444A1 (en) * 1997-04-21 1998-10-29 Tokyo Electron Arizona, Inc. Method and apparatus for ionized sputtering of materials
JPH11200036A (ja) * 1998-01-16 1999-07-27 Toshiba Corp 薄膜の製造方法、及びこのためのスパッタリング装置
JP4780972B2 (ja) * 2004-03-11 2011-09-28 株式会社アルバック スパッタリング装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08225935A (ja) * 1994-11-19 1996-09-03 Leybold Ag 陰極スパッタリング装置のフラッシュオ−バ抑圧装置
JPH09170079A (ja) * 1995-12-18 1997-06-30 Asahi Glass Co Ltd スパッタリング方法および装置
JP2001003166A (ja) 1999-04-23 2001-01-09 Nippon Sheet Glass Co Ltd 基体表面に被膜を被覆する方法およびその方法による基体
JP2002012969A (ja) 2000-07-03 2002-01-15 Sanyo Shinku Kogyo Kk スパッタリング装置の制御方法

Also Published As

Publication number Publication date
WO2007080905A1 (ja) 2007-07-19
KR20080078053A (ko) 2008-08-26
CN101370959B (zh) 2011-01-12
TW200732488A (en) 2007-09-01
JP4963023B2 (ja) 2012-06-27
TWI392755B (zh) 2013-04-11
CN101370959A (zh) 2009-02-18
JP2007186725A (ja) 2007-07-26

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