TWI392755B - Sputtering method and sputtering device - Google Patents

Sputtering method and sputtering device Download PDF

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Publication number
TWI392755B
TWI392755B TW096101141A TW96101141A TWI392755B TW I392755 B TWI392755 B TW I392755B TW 096101141 A TW096101141 A TW 096101141A TW 96101141 A TW96101141 A TW 96101141A TW I392755 B TWI392755 B TW I392755B
Authority
TW
Taiwan
Prior art keywords
waveform
voltage
output
circuit
absolute value
Prior art date
Application number
TW096101141A
Other languages
English (en)
Chinese (zh)
Other versions
TW200732488A (en
Inventor
Motoshi Kobayashi
Hajime Nakamura
Yoshikuni Horishita
Atsushi Ono
Shigemitsu Satou
Toshio Nakajima
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200732488A publication Critical patent/TW200732488A/zh
Application granted granted Critical
Publication of TWI392755B publication Critical patent/TWI392755B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
TW096101141A 2006-01-11 2007-01-11 Sputtering method and sputtering device TWI392755B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006003444A JP4963023B2 (ja) 2006-01-11 2006-01-11 スパッタリング方法及びスパッタリング装置

Publications (2)

Publication Number Publication Date
TW200732488A TW200732488A (en) 2007-09-01
TWI392755B true TWI392755B (zh) 2013-04-11

Family

ID=38256310

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096101141A TWI392755B (zh) 2006-01-11 2007-01-11 Sputtering method and sputtering device

Country Status (5)

Country Link
JP (1) JP4963023B2 (cg-RX-API-DMAC10.html)
KR (1) KR101028050B1 (cg-RX-API-DMAC10.html)
CN (1) CN101370959B (cg-RX-API-DMAC10.html)
TW (1) TWI392755B (cg-RX-API-DMAC10.html)
WO (1) WO2007080905A1 (cg-RX-API-DMAC10.html)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5016819B2 (ja) * 2006-01-11 2012-09-05 株式会社アルバック スパッタリング方法及びスパッタリング装置
JP5322235B2 (ja) * 2007-08-20 2013-10-23 株式会社アルバック スパッタリング方法
JP5429771B2 (ja) * 2008-05-26 2014-02-26 株式会社アルバック スパッタリング方法
US9613784B2 (en) * 2008-07-17 2017-04-04 Mks Instruments, Inc. Sputtering system and method including an arc detection
JP5363166B2 (ja) * 2009-03-31 2013-12-11 株式会社アルバック スパッタリング方法
DE102010031568B4 (de) 2010-07-20 2014-12-11 TRUMPF Hüttinger GmbH + Co. KG Arclöschanordnung und Verfahren zum Löschen von Arcs
WO2012108150A1 (ja) * 2011-02-08 2012-08-16 シャープ株式会社 マグネトロンスパッタリング装置、マグネトロンスパッタリング装置の制御方法、及び成膜方法
DE102013110883B3 (de) * 2013-10-01 2015-01-15 TRUMPF Hüttinger GmbH + Co. KG Vorrichtung und Verfahren zur Überwachung einer Entladung in einem Plasmaprozess
EP2905801B1 (en) 2014-02-07 2019-05-22 TRUMPF Huettinger Sp. Z o. o. Method of monitoring the discharge in a plasma process and monitoring device for monitoring the discharge in a plasma
TWI617687B (zh) * 2014-12-04 2018-03-11 財團法人金屬工業研究發展中心 用於濺鍍設備之監測方法及監測系統
KR101757818B1 (ko) 2015-10-12 2017-07-26 세메스 주식회사 펄스화된 고주파 전력 모니터링 장치 및 그를 포함하는 기판 처리 장치
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
JP2019189913A (ja) * 2018-04-26 2019-10-31 京浜ラムテック株式会社 スパッタリングカソード、スパッタリングカソード集合体およびスパッタリング装置
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
JP7285377B2 (ja) * 2019-12-24 2023-06-01 イーグル ハーバー テクノロジーズ，インク． プラズマシステム用ナノ秒パルサｒｆ絶縁
JP7383533B2 (ja) * 2020-03-16 2023-11-20 株式会社京三製作所 高周波電源装置及びその出力制御方法
JP7439302B2 (ja) 2020-05-12 2024-02-27 イーグル ハーバー テクノロジーズ，インク． 高周波ｒｆ発生器及びｄｃパルシング
EP3945210B1 (en) * 2020-07-31 2023-09-06 Japan Atomic Energy Agency Vacuum component and evacuation method using the same
DE202021103238U1 (de) * 2021-06-16 2021-06-22 TRUMPF Hüttinger GmbH + Co. KG Signalverarbeitungssystem und Leistungsversorgungseinrichtung mit einem Signalverarbeitungssystem
CN120738603B (zh) * 2024-07-17 2026-07-10 荣耀终端股份有限公司 结构件的制备方法、结构件和电子设备
CN118984519A (zh) * 2024-08-05 2024-11-19 上海硬石科技有限公司 一种用于辅助等离子体激发电路装置
CN118890759A (zh) * 2024-08-09 2024-11-01 上海硬石科技有限公司 一种应用于交流等离子体激发电源中的电弧管理系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11200036A (ja) * 1998-01-16 1999-07-27 Toshiba Corp 薄膜の製造方法、及びこのためのスパッタリング装置
TW460602B (en) * 1997-04-21 2001-10-21 Tokyo Electron Ltd Method and apparatus for ionized sputtering of materials

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4441206C2 (de) * 1994-11-19 1996-09-26 Leybold Ag Einrichtung für die Unterdrückung von Überschlägen in Kathoden-Zerstäubungseinrichtungen
JPH09170079A (ja) * 1995-12-18 1997-06-30 Asahi Glass Co Ltd スパッタリング方法および装置
JP2001003166A (ja) * 1999-04-23 2001-01-09 Nippon Sheet Glass Co Ltd 基体表面に被膜を被覆する方法およびその方法による基体
JP2002012969A (ja) * 2000-07-03 2002-01-15 Sanyo Shinku Kogyo Kk スパッタリング装置の制御方法
JP4780972B2 (ja) * 2004-03-11 2011-09-28 株式会社アルバック スパッタリング装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW460602B (en) * 1997-04-21 2001-10-21 Tokyo Electron Ltd Method and apparatus for ionized sputtering of materials
JPH11200036A (ja) * 1998-01-16 1999-07-27 Toshiba Corp 薄膜の製造方法、及びこのためのスパッタリング装置

Also Published As

Publication number Publication date
CN101370959B (zh) 2011-01-12
JP2007186725A (ja) 2007-07-26
JP4963023B2 (ja) 2012-06-27
KR101028050B1 (ko) 2011-04-08
TW200732488A (en) 2007-09-01
WO2007080905A1 (ja) 2007-07-19
CN101370959A (zh) 2009-02-18
KR20080078053A (ko) 2008-08-26

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