CN101370959B - 溅射方法及溅射装置 - Google Patents

溅射方法及溅射装置 Download PDF

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Publication number
CN101370959B
CN101370959B CN2007800022189A CN200780002218A CN101370959B CN 101370959 B CN101370959 B CN 101370959B CN 2007800022189 A CN2007800022189 A CN 2007800022189A CN 200780002218 A CN200780002218 A CN 200780002218A CN 101370959 B CN101370959 B CN 101370959B
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China
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absolute value
output
output voltage
target
circuit
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CN2007800022189A
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Chinese (zh)
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CN101370959A (zh
Inventor
小林大士
中村肇
堀下芳邦
小野敦
佐藤重光
中岛利夫
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Ulvac Inc
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Ulvac Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
CN2007800022189A 2006-01-11 2007-01-11 溅射方法及溅射装置 Active CN101370959B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006003444A JP4963023B2 (ja) 2006-01-11 2006-01-11 スパッタリング方法及びスパッタリング装置
JP003444/2006 2006-01-11
PCT/JP2007/050200 WO2007080905A1 (ja) 2006-01-11 2007-01-11 スパッタリング方法及びスパッタリング装置

Publications (2)

Publication Number Publication Date
CN101370959A CN101370959A (zh) 2009-02-18
CN101370959B true CN101370959B (zh) 2011-01-12

Family

ID=38256310

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800022189A Active CN101370959B (zh) 2006-01-11 2007-01-11 溅射方法及溅射装置

Country Status (5)

Country Link
JP (1) JP4963023B2 (cg-RX-API-DMAC10.html)
KR (1) KR101028050B1 (cg-RX-API-DMAC10.html)
CN (1) CN101370959B (cg-RX-API-DMAC10.html)
TW (1) TWI392755B (cg-RX-API-DMAC10.html)
WO (1) WO2007080905A1 (cg-RX-API-DMAC10.html)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5016819B2 (ja) * 2006-01-11 2012-09-05 株式会社アルバック スパッタリング方法及びスパッタリング装置
JP5322235B2 (ja) * 2007-08-20 2013-10-23 株式会社アルバック スパッタリング方法
JP5429771B2 (ja) * 2008-05-26 2014-02-26 株式会社アルバック スパッタリング方法
US9613784B2 (en) * 2008-07-17 2017-04-04 Mks Instruments, Inc. Sputtering system and method including an arc detection
JP5363166B2 (ja) * 2009-03-31 2013-12-11 株式会社アルバック スパッタリング方法
DE102010031568B4 (de) 2010-07-20 2014-12-11 TRUMPF Hüttinger GmbH + Co. KG Arclöschanordnung und Verfahren zum Löschen von Arcs
WO2012108150A1 (ja) * 2011-02-08 2012-08-16 シャープ株式会社 マグネトロンスパッタリング装置、マグネトロンスパッタリング装置の制御方法、及び成膜方法
DE102013110883B3 (de) * 2013-10-01 2015-01-15 TRUMPF Hüttinger GmbH + Co. KG Vorrichtung und Verfahren zur Überwachung einer Entladung in einem Plasmaprozess
EP2905801B1 (en) 2014-02-07 2019-05-22 TRUMPF Huettinger Sp. Z o. o. Method of monitoring the discharge in a plasma process and monitoring device for monitoring the discharge in a plasma
TWI617687B (zh) * 2014-12-04 2018-03-11 財團法人金屬工業研究發展中心 用於濺鍍設備之監測方法及監測系統
KR101757818B1 (ko) 2015-10-12 2017-07-26 세메스 주식회사 펄스화된 고주파 전력 모니터링 장치 및 그를 포함하는 기판 처리 장치
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
JP2019189913A (ja) * 2018-04-26 2019-10-31 京浜ラムテック株式会社 スパッタリングカソード、スパッタリングカソード集合体およびスパッタリング装置
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
JP7285377B2 (ja) * 2019-12-24 2023-06-01 イーグル ハーバー テクノロジーズ，インク． プラズマシステム用ナノ秒パルサｒｆ絶縁
JP7383533B2 (ja) * 2020-03-16 2023-11-20 株式会社京三製作所 高周波電源装置及びその出力制御方法
JP7439302B2 (ja) 2020-05-12 2024-02-27 イーグル ハーバー テクノロジーズ，インク． 高周波ｒｆ発生器及びｄｃパルシング
EP3945210B1 (en) * 2020-07-31 2023-09-06 Japan Atomic Energy Agency Vacuum component and evacuation method using the same
DE202021103238U1 (de) * 2021-06-16 2021-06-22 TRUMPF Hüttinger GmbH + Co. KG Signalverarbeitungssystem und Leistungsversorgungseinrichtung mit einem Signalverarbeitungssystem
CN120738603B (zh) * 2024-07-17 2026-07-10 荣耀终端股份有限公司 结构件的制备方法、结构件和电子设备
CN118984519A (zh) * 2024-08-05 2024-11-19 上海硬石科技有限公司 一种用于辅助等离子体激发电路装置
CN118890759A (zh) * 2024-08-09 2024-11-01 上海硬石科技有限公司 一种应用于交流等离子体激发电源中的电弧管理系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5611899A (en) * 1994-11-19 1997-03-18 Leybold Aktiengesellschaft Device for suppressing flashovers in cathode sputtering installations
US6585871B1 (en) * 1999-04-23 2003-07-01 Nippon Sheet Glass Co., Ltd. Method of film deposition on substrate surface and substrate produced by the method
CN1667155A (zh) * 2004-03-11 2005-09-14 株式会社爱发科 溅射装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09170079A (ja) * 1995-12-18 1997-06-30 Asahi Glass Co Ltd スパッタリング方法および装置
KR100322330B1 (ko) * 1997-04-21 2002-03-18 히가시 데츠로 재료의 이온 스퍼터링 방법 및 장치
JPH11200036A (ja) * 1998-01-16 1999-07-27 Toshiba Corp 薄膜の製造方法、及びこのためのスパッタリング装置
JP2002012969A (ja) * 2000-07-03 2002-01-15 Sanyo Shinku Kogyo Kk スパッタリング装置の制御方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5611899A (en) * 1994-11-19 1997-03-18 Leybold Aktiengesellschaft Device for suppressing flashovers in cathode sputtering installations
US6585871B1 (en) * 1999-04-23 2003-07-01 Nippon Sheet Glass Co., Ltd. Method of film deposition on substrate surface and substrate produced by the method
CN1667155A (zh) * 2004-03-11 2005-09-14 株式会社爱发科 溅射装置

Also Published As

Publication number Publication date
JP2007186725A (ja) 2007-07-26
JP4963023B2 (ja) 2012-06-27
TWI392755B (zh) 2013-04-11
KR101028050B1 (ko) 2011-04-08
TW200732488A (en) 2007-09-01
WO2007080905A1 (ja) 2007-07-19
CN101370959A (zh) 2009-02-18
KR20080078053A (ko) 2008-08-26

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