TWI391705B - 折反射投射物鏡 - Google Patents
折反射投射物鏡 Download PDFInfo
- Publication number
- TWI391705B TWI391705B TW099128672A TW99128672A TWI391705B TW I391705 B TWI391705 B TW I391705B TW 099128672 A TW099128672 A TW 099128672A TW 99128672 A TW99128672 A TW 99128672A TW I391705 B TWI391705 B TW I391705B
- Authority
- TW
- Taiwan
- Prior art keywords
- illumination
- concave mirror
- lens
- entrance pupil
- optical axis
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 claims abstract description 28
- 238000005286 illumination Methods 0.000 claims description 249
- 210000001747 pupil Anatomy 0.000 claims description 189
- 230000003287 optical effect Effects 0.000 claims description 102
- 230000005855 radiation Effects 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000010453 quartz Substances 0.000 claims description 12
- 238000001459 lithography Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 238000001393 microlithography Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 11
- 238000007654 immersion Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 6
- 238000011144 upstream manufacturing Methods 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005405 multipole Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 238000005056 compaction Methods 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 206010027646 Miosis Diseases 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0804—Catadioptric systems using two curved mirrors
- G02B17/0812—Catadioptric systems using two curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B13/00—Viewfinders; Focusing aids for cameras; Means for focusing for cameras; Autofocus systems for cameras
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B17/00—Details of cameras or camera bodies; Accessories therefor
- G03B17/02—Bodies
- G03B17/08—Waterproof bodies or housings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009045217A DE102009045217B3 (de) | 2009-09-30 | 2009-09-30 | Katadioptrisches Projektionsobjektiv |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201142349A TW201142349A (en) | 2011-12-01 |
| TWI391705B true TWI391705B (zh) | 2013-04-01 |
Family
ID=43705894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099128672A TWI391705B (zh) | 2009-09-30 | 2010-08-26 | 折反射投射物鏡 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8300211B2 (enExample) |
| JP (1) | JP4921580B2 (enExample) |
| KR (1) | KR101083942B1 (enExample) |
| CN (1) | CN102033299B (enExample) |
| DE (1) | DE102009045217B3 (enExample) |
| TW (1) | TWI391705B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9274311B2 (en) * | 2014-01-13 | 2016-03-01 | Genius Electronic Optical Co., Ltd. | Compact narrow field of view lenses for mobile devices |
| CN105652606B (zh) * | 2016-04-05 | 2017-10-10 | 北京理工大学 | 一种折反式深紫外光刻物镜设计方法 |
| KR102798253B1 (ko) * | 2020-02-25 | 2025-04-18 | 가부시키가이샤 니콘 | 광학 지연 시스템 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW559674B (en) * | 1999-11-05 | 2003-11-01 | Zeiss Stiftung | Catadioptric objective comprising two intermediate images |
| TW200528749A (en) * | 2004-01-14 | 2005-09-01 | Zeiss Carl Smt Ag | Catadioptric projection objective |
| US20090059358A1 (en) * | 2007-09-05 | 2009-03-05 | Carl Zeiss Smt Ag | Chromatically corrected catadioptric objective and projection exposure apparatus including the same |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7301605B2 (en) | 2000-03-03 | 2007-11-27 | Nikon Corporation | Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices |
| WO2004019128A2 (en) | 2002-08-23 | 2004-03-04 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
| EP3226073A3 (en) | 2003-04-09 | 2017-10-11 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device |
| US7348575B2 (en) | 2003-05-06 | 2008-03-25 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
| JP2005039211A (ja) | 2003-06-30 | 2005-02-10 | Canon Inc | 投影光学系、露光装置及びデバイスの製造方法 |
| EP1480065A3 (en) * | 2003-05-23 | 2006-05-10 | Canon Kabushiki Kaisha | Projection optical system, exposure apparatus, and device manufacturing method |
| DE10343333A1 (de) * | 2003-09-12 | 2005-04-14 | Carl Zeiss Smt Ag | Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage |
| JP4717813B2 (ja) | 2003-09-12 | 2011-07-06 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光設備のための照明系 |
| EP1714192A1 (en) | 2004-02-13 | 2006-10-25 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
| US7551261B2 (en) * | 2004-02-26 | 2009-06-23 | Carl Zeiss Smt Ag | Illumination system for a microlithography projection exposure installation |
| US7046339B2 (en) * | 2004-03-05 | 2006-05-16 | Micron Technology, Inc. | Optimized optical lithography illumination source for use during the manufacture of a semiconductor device |
| KR20170028451A (ko) | 2004-05-17 | 2017-03-13 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
| US7283205B2 (en) * | 2005-01-19 | 2007-10-16 | Micron Technology, Inc. | Optimized optical lithography illumination source for use during the manufacture of a semiconductor device |
| DE102006027787A1 (de) | 2005-07-05 | 2007-01-18 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage und Betriebsmethode dieser |
| KR101415411B1 (ko) * | 2006-02-16 | 2014-07-04 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치, 노광 방법, 디스플레이의 제조방법, 마스크 및 마스크의 제조 방법 |
| DE102006022958A1 (de) | 2006-05-11 | 2007-11-22 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage, Projektionsbelichtungsverfahren und Verwendung eines Projektionsobjektivs |
| TWI297767B (en) * | 2006-05-30 | 2008-06-11 | Nat Univ Tsing Hua | Measuring apparatus and method using surface plasmon resonance |
| US7557997B2 (en) | 2006-09-28 | 2009-07-07 | Nikon Corporation | Immersion objective optical system, exposure apparatus, device fabrication method, and boundary optical element |
| WO2008086827A1 (en) | 2007-01-16 | 2008-07-24 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system therefor |
| US7929115B2 (en) * | 2007-06-01 | 2011-04-19 | Carl Zeiss Smt Gmbh | Projection objective and projection exposure apparatus for microlithography |
| EP2238513B1 (en) | 2007-12-21 | 2011-11-02 | Carl Zeiss SMT GmbH | Illumination method |
-
2009
- 2009-09-30 DE DE102009045217A patent/DE102009045217B3/de not_active Expired - Fee Related
-
2010
- 2010-03-29 US US12/748,862 patent/US8300211B2/en not_active Expired - Fee Related
- 2010-08-26 TW TW099128672A patent/TWI391705B/zh not_active IP Right Cessation
- 2010-09-29 KR KR1020100094322A patent/KR101083942B1/ko not_active Expired - Fee Related
- 2010-09-29 CN CN201010299110.4A patent/CN102033299B/zh not_active Expired - Fee Related
- 2010-09-30 JP JP2010234941A patent/JP4921580B2/ja not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW559674B (en) * | 1999-11-05 | 2003-11-01 | Zeiss Stiftung | Catadioptric objective comprising two intermediate images |
| TW200528749A (en) * | 2004-01-14 | 2005-09-01 | Zeiss Carl Smt Ag | Catadioptric projection objective |
| US20090059358A1 (en) * | 2007-09-05 | 2009-03-05 | Carl Zeiss Smt Ag | Chromatically corrected catadioptric objective and projection exposure apparatus including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US8300211B2 (en) | 2012-10-30 |
| US20110075121A1 (en) | 2011-03-31 |
| CN102033299B (zh) | 2015-03-11 |
| KR20110035964A (ko) | 2011-04-06 |
| TW201142349A (en) | 2011-12-01 |
| CN102033299A (zh) | 2011-04-27 |
| DE102009045217B3 (de) | 2011-04-07 |
| KR101083942B1 (ko) | 2011-11-15 |
| JP2011076094A (ja) | 2011-04-14 |
| JP4921580B2 (ja) | 2012-04-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |