TWI389187B - 具有接地構件完整性指示器之電漿處理室及其使用方法 - Google Patents

具有接地構件完整性指示器之電漿處理室及其使用方法 Download PDF

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Publication number
TWI389187B
TWI389187B TW096140121A TW96140121A TWI389187B TW I389187 B TWI389187 B TW I389187B TW 096140121 A TW096140121 A TW 096140121A TW 96140121 A TW96140121 A TW 96140121A TW I389187 B TWI389187 B TW I389187B
Authority
TW
Taiwan
Prior art keywords
ground
chamber
processing
substrate support
grounding
Prior art date
Application number
TW096140121A
Other languages
English (en)
Chinese (zh)
Other versions
TW200832530A (en
Inventor
懷特約翰Ｍ
索倫森卡爾
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW200832530A publication Critical patent/TW200832530A/zh
Application granted granted Critical
Publication of TWI389187B publication Critical patent/TWI389187B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/20—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
TW096140121A 2006-11-20 2007-10-25 具有接地構件完整性指示器之電漿處理室及其使用方法 TWI389187B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/561,463 US8004293B2 (en) 2006-11-20 2006-11-20 Plasma processing chamber with ground member integrity indicator and method for using the same

Publications (2)

Publication Number Publication Date
TW200832530A TW200832530A (en) 2008-08-01
TWI389187B true TWI389187B (zh) 2013-03-11

Family

ID=39416283

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096140121A TWI389187B (zh) 2006-11-20 2007-10-25 具有接地構件完整性指示器之電漿處理室及其使用方法

Country Status (5)

Country Link
US (1) US8004293B2 (cg-RX-API-DMAC10.html)
JP (1) JP5291848B2 (cg-RX-API-DMAC10.html)
KR (1) KR100923594B1 (cg-RX-API-DMAC10.html)
CN (1) CN101187013B (cg-RX-API-DMAC10.html)
TW (1) TWI389187B (cg-RX-API-DMAC10.html)

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TWI697657B (zh) * 2015-06-11 2020-07-01 日商東京威力科創股份有限公司 用以檢查聚焦環之系統、以及檢查聚焦環之方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI697657B (zh) * 2015-06-11 2020-07-01 日商東京威力科創股份有限公司 用以檢查聚焦環之系統、以及檢查聚焦環之方法

Also Published As

Publication number Publication date
KR20080045610A (ko) 2008-05-23
KR100923594B1 (ko) 2009-10-23
JP2008156747A (ja) 2008-07-10
US20080116876A1 (en) 2008-05-22
US8004293B2 (en) 2011-08-23
CN101187013B (zh) 2010-12-15
CN101187013A (zh) 2008-05-28
JP5291848B2 (ja) 2013-09-18
TW200832530A (en) 2008-08-01

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