TWI385489B - A workpiece table and an exposure apparatus using the work table - Google Patents
A workpiece table and an exposure apparatus using the work table Download PDFInfo
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- TWI385489B TWI385489B TW098141001A TW98141001A TWI385489B TW I385489 B TWI385489 B TW I385489B TW 098141001 A TW098141001 A TW 098141001A TW 98141001 A TW98141001 A TW 98141001A TW I385489 B TWI385489 B TW I385489B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Description
本發明係關於保持被施予曝光等加工處理之基板的工件台，尤其係關於可吸附保持產生翹曲之晶圓等基板(工件)的工件台、及使用該工件台的曝光裝置。The present invention relates to a workpiece stage that holds a substrate subjected to processing such as exposure, and more particularly to a workpiece stage that can adsorb and hold a substrate (workpiece) such as a warped wafer, and an exposure apparatus using the workpiece stage.
以往，在製造半導體、印刷基板、液晶基板等(以下亦稱為工件)之工程中，在進行曝光等加工處理時，以使工件不會發生位置偏移的方式而使用將工件作吸附保持的工件台。Conventionally, in the process of manufacturing a semiconductor, a printed circuit board, a liquid crystal substrate, or the like (hereinafter also referred to as a workpiece), when performing processing such as exposure, the workpiece is adsorbed and held so that the workpiece does not shift in position. Workpiece table.
第8圖係顯示習知技術之具備有將工件作吸附保持之工件台之曝光裝置之一例示圖。Fig. 8 is a view showing an example of an exposure apparatus having a workpiece stage for holding and holding a workpiece by a conventional technique.
如該圖所示，該曝光裝置100係由：出射紫外線的光照射部101、形成有圖案的遮罩102、保持遮罩102的遮罩台103、保持塗佈有阻劑的晶圓或印刷基板等工件104的工件台105、及將遮罩102的圖案像投影在被保持在工件台105上的工件104上的投影透鏡106等所構成。其中，在曝光裝置100中亦有未具備有投影透鏡106者。此外，光照射部101係具備有：放射包含紫外線之光的燈1011、及將來自燈1011的光作反射的反射鏡1012。此外，在工件台105的表面形成有真空吸附溝(或複數真空吸附孔)1051。在工件台105連接有配管1052，透過配管1052，對真空吸附孔(真空吸附溝)1051，當在保持工件104時係被供給真空，另外當在將工件104由工件台105卸除時則係被供給空氣。As shown in the figure, the exposure apparatus 100 is composed of a light irradiation unit 101 that emits ultraviolet rays, a mask 102 on which a pattern is formed, a mask stage 103 that holds the mask 102, a wafer that is coated with a resist, or a printing. A workpiece stage 105 of a workpiece 104 such as a substrate, and a projection lens 106 that projects a pattern image of the mask 102 onto the workpiece 104 held on the workpiece stage 105 are formed. However, in the exposure apparatus 100, there is also a case where the projection lens 106 is not provided. Further, the light irradiation unit 101 includes a lamp 1011 that emits light including ultraviolet rays, and a mirror 1012 that reflects light from the lamp 1011. Further, a vacuum suction groove (or a plurality of vacuum suction holes) 1051 is formed on the surface of the workpiece stage 105. A pipe 1052 is connected to the workpiece stage 105, and the vacuum suction hole (vacuum adsorption groove) 1051 is supplied through the pipe 1052. When the workpiece 104 is held, vacuum is supplied, and when the workpiece 104 is removed from the workpiece stage 105, Air is supplied.
以下簡單說明該曝光裝置的動作。藉由未圖示的搬送手段，在曝光裝置100的工件台105上置放印刷基板等工件104。在工件104的表面(形成圖案之側)塗佈有阻劑。對工件台105的真空吸附孔(真空吸附溝)1051供給真空，工件104係被吸附保持在工件台105上。對於工件台105之真空的供給係在曝光處理中，以工件104不會移動的方式持續進行。若曝光處理結束，藉由控制部108來切換電磁閥107，中止對於真空吸附孔(真空吸附溝)1051之真空的供給而解除工件104的吸附保持，對真空吸附孔(真空吸附溝)1051供給空氣，使空氣由真空吸附孔(真空吸附溝)1051吹出。藉此，工件104係由工件台105脫離，藉由未圖示的搬送手段而被搬送至曝光裝置100外。The operation of the exposure apparatus will be briefly described below. A workpiece 104 such as a printed board is placed on the workpiece stage 105 of the exposure apparatus 100 by a transport means (not shown). A resist is applied to the surface (the side on which the pattern is formed) of the workpiece 104. A vacuum is applied to the vacuum suction hole (vacuum adsorption groove) 1051 of the workpiece stage 105, and the workpiece 104 is adsorbed and held on the workpiece stage 105. The supply of vacuum to the workpiece stage 105 is continued in the exposure process so that the workpiece 104 does not move. When the exposure process is completed, the control unit 108 switches the solenoid valve 107, stops the supply of vacuum to the vacuum suction hole (vacuum adsorption groove) 1051, and releases the suction and holding of the workpiece 104, and supplies the vacuum adsorption hole (vacuum adsorption groove) 1051. The air is blown out by the vacuum suction hole (vacuum adsorption groove) 1051. Thereby, the workpiece 104 is detached from the workpiece stage 105, and is conveyed to the outside of the exposure apparatus 100 by the conveyance means not shown.
[專利文獻][Patent Literature]
[專利文獻1]日本特開2002-134597號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-134597
[專利文獻2]日本特開2007-238290號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2007-238290
一般而言，進行曝光等處理的工件係具有：晶圓或玻璃基板、稍厚的印刷基板、薄且軟的薄膜狀基板等各種種類。此外，亦有例如在反覆進行CVD工程或蝕刻工程中產生翹曲或變形者。最近依用途的不同，亦逐漸使用在玻璃基板上黏貼矽晶圓，或在藍寶石基板上黏貼氮化鎵的特殊基板。如上所示，貼合材質不同的2枚基板的工件由於各材質的熱膨張係數不同，故容易發生翹曲。工件台係為了將如上所述之各種材質或已變形的工件作吸附保持，真空吸附溝(孔)的形狀或真空吸附方法已有各種被提出。以下就其一例加以說明。Generally, the workpiece to be subjected to exposure or the like has various types such as a wafer, a glass substrate, a slightly thick printed substrate, and a thin and flexible film substrate. In addition, there are also those who generate warpage or deformation, for example, in a repeated CVD process or etching process. Recently, depending on the application, a special substrate on which a silicon wafer is pasted on a glass substrate or a gallium nitride substrate is adhered to a sapphire substrate is gradually used. As described above, since the workpieces of the two substrates having different bonding materials have different thermal expansion coefficients of the respective materials, warpage is likely to occur. In order to adsorb and hold various materials or deformed workpieces as described above, various shapes of vacuum adsorption grooves (holes) or vacuum adsorption methods have been proposed. The following is an example of this.
專利文獻1所記載的工作台裝置係具備有：供給真空的孔、及由該孔朝放射狀延伸的複數真空吸附溝，藉由構成為如上所示，可將薄且軟的可撓性基板在不會發生空氣積存的情形作吸附保持。The table device described in Patent Document 1 includes a hole for supplying a vacuum and a plurality of vacuum suction grooves radially extending from the hole, and the thin and flexible flexible substrate can be formed as described above. Adsorption is maintained in the case where air accumulation does not occur.
此外，專利文獻2所記載的工件平台係將吸附保持工件的多孔質板料區分為：與周緣部空氣室相連通的周緣部區域、及與中央部空氣室相連通的中央部區域，例如由周緣部區域朝中央部區域依序供給真空，藉此可吸附保持已產生翹曲之較薄的工件。Further, the workpiece platform described in Patent Document 2 divides the porous sheet material that adsorbs and holds the workpiece into a peripheral portion region that communicates with the peripheral portion air chamber, and a central portion region that communicates with the central portion air chamber, for example, The peripheral portion region sequentially supplies a vacuum toward the central portion region, whereby the thinner workpiece having warpage can be adsorbed and held.
本件發明人等針對將已產生翹曲的晶圓矯正翹曲且可以全面作吸附保持的工件台精心研究。已產生翹曲的晶圓係例如第9圖(a)所示，在翹曲成碗形為Φ 120mm的晶圓201中，周邊部2011係相對於中央部2012翹曲1mm或翹曲1mm以上。此外，依晶圓，如第9圖(b)所示，亦有周邊部2021呈波狀變形者。為了吸附保持產生如上所示之翹曲的晶圓202，使用例如專利文獻1或專利文獻2所記載之工件台來進行實驗，但是並無法將全面作吸附保持。其中，在該等圖中，為了易於理解起見，工件翹曲量係被誇張顯示。以下針對難以全面吸附的理由加以說明。The inventors of the present invention have intensively studied a workpiece stage which corrects warpage of a wafer which has been warped and which can be fully adsorbed and held. In the wafer 201 in which warpage has occurred, for example, as shown in Fig. 9(a), in the wafer 201 which is warped into a bowl shape of Φ 120 mm, the peripheral portion 2011 is warped by 1 mm or warped by 1 mm or more with respect to the central portion 2012. . Further, according to the wafer, as shown in Fig. 9(b), the peripheral portion 2021 is also corrugated. In order to adsorb and hold the wafer 202 which is warped as described above, an experiment is performed using, for example, a workpiece stage described in Patent Document 1 or Patent Document 2, but it is not possible to fully perform adsorption. Among them, in these figures, the amount of warpage of the workpiece is exaggerated for the sake of easy understanding. The following is a description of the reasons why it is difficult to fully absorb.
如習知技術之第10圖(a)之工件台301的剖面圖所示，當使用具備有朝放射狀延伸的複數真空吸附溝3011的工件台301時，即使對真空吸附溝3011供給真空，空氣亦由晶圓302之翹曲的周邊部3021朝向真空吸附溝3011流入，真空吸附溝3011的真空吸附壓會降低，而無法吸附晶圓302。As shown in the cross-sectional view of the workpiece stage 301 in Fig. 10(a) of the prior art, when the workpiece stage 301 having the plurality of vacuum suction grooves 3011 extending radially is used, even if the vacuum suction groove 3011 is supplied with vacuum, The air also flows in from the peripheral portion 3021 of the warp of the wafer 302 toward the vacuum adsorption groove 3011, and the vacuum adsorption pressure of the vacuum adsorption groove 3011 is lowered to prevent the wafer 302 from being adsorbed.
此外，如習知技術之第10圖(b)之工件台303的剖面圖所示，當使用在表面具備有多數真空吸附孔3031的工件台303時，晶圓304的中央部3041係被吸附在所相接的工件台303的中央部的真空吸附孔3031，但是空氣仍然會由晶圓304之翹曲的周邊部3042流入真空吸附孔3031，因此若再持續該情形，真空吸附壓會降低，而無法吸附保持晶圓304全面。Further, as shown in the cross-sectional view of the workpiece stage 303 in Fig. 10(b) of the prior art, when the workpiece stage 303 having the plurality of vacuum suction holes 3031 on the surface is used, the central portion 3041 of the wafer 304 is adsorbed. The vacuum suction hole 3031 in the central portion of the workpiece table 303 that is in contact with each other, but the air still flows into the vacuum adsorption hole 3031 from the warped peripheral portion 3042 of the wafer 304. Therefore, if this condition is continued, the vacuum adsorption pressure is lowered. It is impossible to adsorb and keep the wafer 304 comprehensive.
此外，如習知技術之第11圖(a)、(b)之工件台的剖面圖及平面圖所示，將環狀的真空吸附溝，由工件台401的中央部形成複數的第1真空吸附溝4011、第2真空吸附溝4012、第3真空吸附溝4013…，由內側的真空吸附溝依序將真空供給至第1真空吸附溝4011、第2真空吸附溝4012、第3真空吸附溝4013…。但是，如該圖所示，雖然會有晶圓402接近工件台401的部分4021被吸附且自此朝向外側被吸附的傾向，但是所被吸附的部分的相反側相反地會離開工件台401，自此洩漏而使真空吸附壓降低，仍然無法吸附保持晶圓402全面。Further, as shown in the cross-sectional view and the plan view of the workpiece stage in the eleventh (a) and (b) of the prior art, a plurality of first vacuum adsorptions are formed in the annular vacuum adsorption groove from the central portion of the workpiece stage 401. The groove 4011, the second vacuum adsorption groove 4012, the third vacuum adsorption groove 4013, and the vacuum are sequentially supplied to the first vacuum adsorption groove 4011, the second vacuum adsorption groove 4012, and the third vacuum adsorption groove 4013 by the inner vacuum adsorption groove. .... However, as shown in the figure, although the portion 4021 of the wafer 402 approaching the workpiece stage 401 is adsorbed and tends to be adsorbed toward the outside, the opposite side of the adsorbed portion may be opposite to the workpiece stage 401. Since the leakage causes the vacuum adsorption pressure to decrease, it is still impossible to adsorb and maintain the wafer 402 in a comprehensive manner.
本發明之目的係鑑於上述習知技術的問題點而提供一種在藉由真空吸附來吸附保持基板(工件)的工件台中，即使為已產生碗形翹曲的基板(工件)，亦可矯正該翹曲而吸附保持基板(工件)全面的工件台及使用該工件台的曝光裝置。The object of the present invention is to provide a substrate for adsorbing and holding a substrate (workpiece) by vacuum adsorption in view of the problems of the above-mentioned prior art, and it is possible to correct the substrate (workpiece) even if a bowl-shaped warpage has been generated. A workpiece table that is warped to hold the entire substrate (workpiece) and an exposure device that uses the workpiece stage.
本發明係為了解決上述課題，而採用以下所示之手段。In order to solve the above problems, the present invention employs the means described below.
第1手段係一種工件台，係藉由真空吸附來吸附保持工件的工件台，其特徵為具備有：在將工件作吸附保持的工件台表面，以放射狀配置有複數列由與第1配管相連接之複數真空吸附孔所成之真空吸附孔列的第1真空吸附孔群；形成在被上述第1真空吸附孔群所包夾的區域，與第2配管相連接的第2真空吸附孔群；及在將上述工件吸附保持時，由上述第1配管對上述第1真空吸附孔群供給真空，接著，由上述第2配管對上述第2真空吸附孔群供給真空的控制部。The first means is a workpiece stage which is a workpiece stage that adsorbs and holds a workpiece by vacuum suction, and is characterized in that: a surface of the workpiece table on which the workpiece is adsorbed and held is arranged in a radial arrangement with a plurality of rows and a first pipe a first vacuum adsorption hole group of the vacuum adsorption hole array formed by the plurality of vacuum adsorption holes connected to each other; a second vacuum adsorption hole formed in a region sandwiched by the first vacuum adsorption hole group and connected to the second pipe When the workpiece is adsorbed and held, vacuum is supplied to the first vacuum adsorption hole group by the first pipe, and then a vacuum control unit is supplied to the second vacuum adsorption hole group by the second pipe.
第2手段係一種曝光裝置，係具備有：將光出射的光出射部；保持形成有圖案之遮罩的遮罩台；及保持被轉印形成在上述遮罩之圖案之工件的工件台的曝光裝置，其特徵為：上述工件台係上述第1手段所記載之工件台。The second means is an exposure apparatus including: a light emitting portion that emits light; a mask table that holds a mask in which a pattern is formed; and a workpiece stage that holds a workpiece formed on the pattern of the mask An exposure apparatus characterized in that the workpiece stage is a workpiece stage described in the first means.
藉由本發明之工件台，即使為產生碗形翹曲的工件或呈波浪起伏的工件，亦可一面矯正翹曲，一面將工件確實地吸附保持在工件台全面。With the workpiece stage of the present invention, even if a bowl-shaped warped workpiece or a undulating workpiece is produced, the warpage can be corrected while the workpiece is surely adsorbed and held on the workpiece table.
此外，藉由本發明之曝光裝置，可提供可將產生碗形翹曲的工件或呈波浪起伏的工件確實地吸附保持工件台全面的曝光裝置。Further, with the exposure apparatus of the present invention, it is possible to provide an exposure apparatus which can positively adsorb and hold the workpiece-formed workpiece or the undulating workpiece.
使用第1圖至第6圖，說明本發明之一實施形態。An embodiment of the present invention will be described using Figs. 1 to 6 .
第1圖係顯示具備有本實施形態之發明之工件台的曝光裝置的概略構成剖面圖。其中，以下就曝光裝置所用之工件台為例加以說明，但是即使為曝光裝置以外，若為將工件(基板)作吸附保持而進行處理的裝置，即可適用本發明之工件台。Fig. 1 is a schematic cross-sectional view showing an exposure apparatus including a workpiece stage of the invention of the present embodiment. In the following, the workpiece stage used in the exposure apparatus will be described as an example. However, the workpiece stage of the present invention can be applied to a device that performs processing for adsorbing and holding a workpiece (substrate) in addition to the exposure apparatus.
如該圖所示，該曝光裝置1係由：將紫外線出射的光照射部2、形成有圖案的遮罩3、保持遮罩3的遮罩台4、保持塗佈有阻劑的晶圓或印刷基板等工件5的工件台6、在被保持在工件台6上的工件5上投影遮罩3之圖案像的投影透鏡7等所構成。其中，在曝光裝置1中亦有未具備有投影透鏡7者。光照射部2係具備有：放射包含紫外線之光的燈21、及將來自燈21的光作反射的反射鏡22。此外，在工件台6的表面形成有真空吸附孔群61、62。As shown in the figure, the exposure apparatus 1 is composed of a light irradiation unit 2 that emits ultraviolet light, a mask 3 on which a pattern is formed, a mask stage 4 that holds the mask 3, and a wafer on which a resist is applied or The workpiece stage 6 of the workpiece 5 such as a printed board is formed of a projection lens 7 that projects a pattern image of the mask 3 on the workpiece 5 held on the workpiece stage 6. Among them, in the exposure apparatus 1, there is also a case where the projection lens 7 is not provided. The light irradiation unit 2 includes a lamp 21 that emits light including ultraviolet rays, and a mirror 22 that reflects light from the lamp 21. Further, vacuum suction hole groups 61 and 62 are formed on the surface of the workpiece stage 6.
在工件台6連接有第1真空配管71及第2真空配管72，由控制部9控制第1電磁閥81及第2電磁閥82，藉此透過第1真空配管71及第2真空配管72，對真空吸附孔，當在保持工件5時係被供給真空，另外當在將工件5由工件台6卸除時則係被供給空氣。若針對對於工件台6之真空供給機構加以詳述，在第1真空配管71係被安裝有第1電磁閥81，在第2真空配管72則係被安裝有第2電磁閥82。第1電磁閥81與第2電磁閥82係分別與控制部9相連接，藉由來自控制部9的動作訊號進行動作。構成為在第1真空配管71與第2真空配管72係獨立被供給真空，若第1電磁閥81進行動作，係對第1真空配管71供給真空，若第2電磁閥82進行動作，則係對第2真空配管72供給真空。The first vacuum pipe 71 and the second vacuum pipe 72 are connected to the workpiece stage 6, and the first electromagnetic valve 81 and the second electromagnetic valve 82 are controlled by the control unit 9, and the first vacuum pipe 71 and the second vacuum pipe 72 are transmitted through the first vacuum pipe 71 and the second vacuum pipe 72. For the vacuum suction holes, the vacuum is supplied while the workpiece 5 is held, and the air is supplied when the workpiece 5 is removed from the workpiece table 6. When the vacuum supply mechanism for the workpiece stage 6 is described in detail, the first electromagnetic valve 81 is attached to the first vacuum piping 71, and the second electromagnetic valve 82 is attached to the second vacuum piping 72. The first electromagnetic valve 81 and the second electromagnetic valve 82 are connected to the control unit 9, respectively, and are operated by an operation signal from the control unit 9. When the first vacuum valve 81 is operated, vacuum is supplied to the first vacuum pipe 71, and when the first electromagnetic valve 81 is operated, when the second electromagnetic valve 82 is operated, the vacuum is supplied. Vacuum is supplied to the second vacuum piping 72.
第2圖係第1圖所示之工件台6的放大平面圖，第3圖(a)係第2圖之A-A部分的剖面圖，第3圖(b)係第2圖之B-B部分的剖面圖。2 is an enlarged plan view of the workpiece stage 6 shown in FIG. 1, FIG. 3(a) is a cross-sectional view taken along line AA of FIG. 2, and FIG. 3(b) is a cross-sectional view of a portion BB of FIG. .
如第2圖所示，在工件台6具備有：第1真空吸附孔群61與第2真空吸附孔群62。第1真空吸附孔群6係將複數真空吸附孔X將由工件台6的中央部朝向周邊部(外側)作排列的真空吸附孔列以放射狀配置複數列而形成(圖中以X表示)。其中，在該圖中，第1真空吸附孔群61係排列成直線狀，但是若為在某一範圍內，亦可配置成蛇行(彎曲)或千鳥格狀(Z字形)。此外，第2真空吸附孔群62係形成在被第1真空吸附孔群61所包夾的區域(圖中以Y表示)。在本實施形態中，各真空吸附孔的直徑為Φ 1mm，其個數係第1真空吸附孔群61的真空吸附孔X為10個，第2真空吸附孔群62的真空吸附孔Y為19個。第1真空吸附孔群61的真空吸附孔X係全部與第1真空配管71相連接，此外，第2真空吸附孔群62的真空吸附孔Y係全部與第2真空配管72相連接。對於第1真空配管71與第2真空配管72係獨立供給有工件吸附用的真空。As shown in FIG. 2, the workpiece stage 6 is provided with a first vacuum adsorption hole group 61 and a second vacuum adsorption hole group 62. The first vacuum adsorption hole group 6 is formed by arranging a plurality of vacuum adsorption holes X arranged in a central portion from the center portion of the workpiece stage 6 toward the peripheral portion (outer side) in a plurality of rows (indicated by X in the drawing). In the figure, the first vacuum adsorption hole groups 61 are arranged in a straight line, but if they are within a certain range, they may be arranged in a meandering (bending) or a thousand bird shape (zigzag shape). Further, the second vacuum adsorption hole group 62 is formed in a region sandwiched by the first vacuum adsorption hole group 61 (indicated by Y in the drawing). In the present embodiment, the diameter of each vacuum adsorption hole is Φ 1 mm, and the number of vacuum adsorption holes X of the first vacuum adsorption hole group 61 is 10, and the vacuum adsorption hole Y of the second vacuum adsorption hole group 62 is 19 One. The vacuum adsorption holes X of the first vacuum adsorption hole group 61 are all connected to the first vacuum pipe 71, and the vacuum adsorption holes Y of the second vacuum adsorption hole group 62 are all connected to the second vacuum pipe 72. The first vacuum pipe 71 and the second vacuum pipe 72 are independently supplied with a vacuum for workpiece suction.
使用第4圖、第5圖、及第6圖，針對本發明之工件台的動作加以說明。第4圖(a)～第4圖(c)係相當於第3圖(a)的情形，第5圖(a)～第5圖(c)係相當於第3圖(b)的情形。其中，在該等圖中，為了易於理解起見，工件翹曲量係被誇張顯示。此外，第6圖係由上方觀看工件台6的圖，以模式顯示工件5被吸附的態樣。The operation of the workpiece stage of the present invention will be described using Figs. 4, 5, and 6. 4(a) to 4(c) correspond to the case of Fig. 3(a), and Figs. 5(a) to 5(c) correspond to the case of Fig. 3(b). Among them, in these figures, the amount of warpage of the workpiece is exaggerated for the sake of easy understanding. Further, Fig. 6 is a view of the workpiece stage 6 viewed from above, showing the state in which the workpiece 5 is adsorbed in a mode.
首先，如第4圖(a)所示，已發生翹曲的工件(晶圓等)5被未圖示的搬送機構所搬送且被載置在工件台6。第1圖所示之控制部9使第1電磁閥81作動作，對第1真空配管71供給工件吸附用的真空。對第1真空吸附孔群71的真空吸附孔X供給真空。工件5係翹曲成碗形，在其中央部或其周邊與工件台6相接。因此，工件5係藉由設在工件台6中央的第1真空吸附孔群61的真空吸附孔X所吸附。First, as shown in FIG. 4( a ), the workpiece (wafer or the like) 5 that has warped is transported by a transport mechanism (not shown) and placed on the workpiece stage 6 . The control unit 9 shown in Fig. 1 operates the first electromagnetic valve 81, and supplies the first vacuum pipe 71 with a vacuum for suction of the workpiece. Vacuum is supplied to the vacuum adsorption holes X of the first vacuum adsorption hole group 71. The workpiece 5 is warped into a bowl shape, and is in contact with the workpiece stage 6 at a central portion or its periphery. Therefore, the workpiece 5 is adsorbed by the vacuum suction hole X of the first vacuum adsorption hole group 61 provided in the center of the workpiece stage 6.
接著，如第4圖(b)所示，第1真空吸附孔群61係以放射狀形成3列，因此已翹曲的工件5係被拉至該3列中以工件5與工件台6的間隔為最窄之列之工件台6的中央部(內側)的真空吸附孔X而被吸附。如此一來，這次係位於該列之外側的真空吸附孔X與工件5的間隔變窄，被拉至該真空吸附孔X而被吸附(與第6圖的箭號(1)相對應)。其他列的真空吸附孔X在該階段並無法吸附工件5而產生洩漏。但是，形成在工件台6的真空吸附孔X(Y)的直徑小為Φ 1mm，而且真空吸附孔X(Y)的個數亦少，因此供給至第1真空配管71的真空壓力會上升(接近於大氣壓)之程度的大量空氣並不會流入。Next, as shown in FIG. 4(b), the first vacuum adsorption hole group 61 is formed in three rows in a radial shape, so that the warped workpiece 5 is pulled into the three columns to the workpiece 5 and the workpiece stage 6. The vacuum adsorption holes X in the central portion (inner side) of the workpiece stage 6 having the narrowest interval are adsorbed. As a result, the interval between the vacuum suction hole X and the workpiece 5 on the outer side of the column is narrowed, and is pulled to the vacuum suction hole X to be adsorbed (corresponding to the arrow (1) of Fig. 6). The vacuum adsorption holes X of the other columns are unable to adsorb the workpiece 5 at this stage to cause leakage. However, since the diameter of the vacuum suction hole X (Y) formed in the workpiece stage 6 is as small as Φ 1 mm and the number of vacuum suction holes X (Y) is small, the vacuum pressure supplied to the first vacuum pipe 71 rises ( A large amount of air close to atmospheric pressure does not flow in.
不久，如第4圖(c)所示，翹曲的工件5係被第1真空吸附孔群71的1列所吸附(與第6圖的箭號(1)相對應)。若以第2圖的B-B剖面圖觀看該狀態，則如第5圖(a)所示。As a result, as shown in Fig. 4(c), the warped workpiece 5 is adsorbed by one row of the first vacuum adsorption hole group 71 (corresponding to the arrow (1) of Fig. 6). If this state is viewed in the B-B cross-sectional view of Fig. 2, it is as shown in Fig. 5(a).
接著，在第5圖(a)所示狀態下，控制部9係使第2電磁閥82進行動作，當對第2真空配管72供給工件吸附用的真空時，係對第2真空吸附孔群62供給真空。對第2真空配管72供給真空的時序係在對第1真空配管71供給真空之後再對第2真空配管72供給真空為止的時間(數秒至數十秒)，可利用計時器予以設定，亦可當工件5被第1真空吸附孔群61的1列所吸附時，供給至第1真空配管71的真空壓力會產生變動(壓力稍微下降)，因此藉由真空感測器來檢測該變動，而供給至第2真空配管72。Then, in the state shown in Fig. 5 (a), the control unit 9 operates the second electromagnetic valve 82, and when the second vacuum pipe 72 is supplied with the vacuum for the workpiece suction, the second vacuum suction hole group is applied. 62 is supplied with vacuum. The timing of supplying the vacuum to the second vacuum piping 72 is a time (a few seconds to several tens of seconds) until the vacuum is supplied to the first vacuum piping 71 and then the vacuum is supplied to the second vacuum piping 72, and can be set by a timer. When the workpiece 5 is adsorbed by one row of the first vacuum adsorption hole group 61, the vacuum pressure supplied to the first vacuum pipe 71 fluctuates (the pressure is slightly lowered), so the fluctuation is detected by the vacuum sensor. It is supplied to the second vacuum piping 72.
接著，如第5圖(b)所示，工件5係被第1真空吸附孔群61的1列所吸附，因此位於正在吸附工件5之真空吸附孔X之列相鄰的第2真空吸附孔群62的真空吸附孔Y與工件5的間隔會變窄。因此，工件5係被拉至該第2真空吸附孔群62的真空吸附孔Y而被吸附(與第6圖的箭號(2)相對應)。若工件5被吸附在位於第1真空吸附孔群61相鄰的第2真空吸附孔群62的真空吸附孔Y時，在第2真空吸附孔群62中，工件5係被吸附在另外在其圓周方向相鄰的真空吸附孔Y或直徑方向(外側)相鄰的真空吸附孔Y(與第6圖的箭號(3)相對應)。Next, as shown in FIG. 5(b), the workpiece 5 is adsorbed by one row of the first vacuum adsorption hole group 61, and therefore the second vacuum adsorption hole adjacent to the vacuum adsorption hole X that is adsorbing the workpiece 5 is adjacent. The interval between the vacuum suction holes Y of the group 62 and the workpiece 5 is narrowed. Therefore, the workpiece 5 is drawn to the vacuum suction hole Y of the second vacuum adsorption hole group 62 and adsorbed (corresponding to the arrow (2) of Fig. 6). When the workpiece 5 is adsorbed to the vacuum suction hole Y of the second vacuum adsorption hole group 62 adjacent to the first vacuum adsorption hole group 61, the workpiece 5 is adsorbed in the second vacuum adsorption hole group 62. The vacuum adsorption holes Y adjacent in the circumferential direction or the vacuum adsorption holes Y adjacent to the diameter direction (outer side) (corresponding to the arrow (3) of Fig. 6).
如第5圖(c)所示，工件5係一面矯正翹曲一面依序朝圓周方向被吸附，到達最初未吸附工件5之第1真空吸附孔群61的真空吸附孔列。如此一來，在現階段，工件5係被第2真空吸附孔群62所吸附，因此工件5與第1真空吸附孔群61的真空吸附孔列的間隔會變窄，工件5係被第1真空吸附孔群61的真空吸附孔列所吸附(與第6圖的箭號(4)相對應)。若工件5被吸附至第1真空吸附孔群61的真空吸附孔列X時，工件5係被另外位於其相鄰的第2真空吸附孔群62的真空吸附孔Y，以工件台6的圓周方向與直徑方向依序被吸附(與第6圖的箭號(5)相對應)。接著，最後工件5被矯正翹曲且在工件台6全面被吸附保持(與第6圖的箭號(7)相對應)。As shown in Fig. 5(c), the workpiece 5 is sequentially adsorbed toward the circumferential direction while being warped, and reaches the vacuum suction hole array of the first vacuum adsorption hole group 61 where the workpiece 5 is not initially adsorbed. As a result, at this stage, since the workpiece 5 is adsorbed by the second vacuum adsorption hole group 62, the interval between the workpiece 5 and the vacuum suction hole array of the first vacuum adsorption hole group 61 is narrowed, and the workpiece 5 is first. The vacuum adsorption hole group of the vacuum adsorption hole group 61 is adsorbed (corresponding to the arrow (4) of Fig. 6). When the workpiece 5 is adsorbed to the vacuum adsorption hole array X of the first vacuum adsorption hole group 61, the workpiece 5 is additionally positioned in the vacuum adsorption hole Y of the adjacent second vacuum adsorption hole group 62, to the circumference of the workpiece stage 6. The direction and the diameter direction are sequentially adsorbed (corresponding to the arrow (5) of Fig. 6). Next, finally, the workpiece 5 is corrected to warp and is completely adsorbed and held at the workpiece stage 6 (corresponding to the arrow (7) of Fig. 6).
本案發明人等係使用本實施形態之發明之工件台，實際上使用周邊部相對於中央部翹曲1mm左右並且周邊部呈波狀變形的10枚Φ 120mm晶圓來作為工件，結果確認出10枚晶圓全部均可藉由工件台而以全面作吸附保持。In the case of the inventor of the present invention, the workpiece stage of the invention of the present invention is used, and ten Φ 120 mm wafers having a peripheral portion that is warped by about 1 mm with respect to the center portion and having a corrugated deformation in the peripheral portion are actually used as the workpiece. All of the wafers can be held in a comprehensive manner by the workpiece stage.
第7圖係顯示第2實施形態之發明之工件台之構成的平面圖。Fig. 7 is a plan view showing the configuration of a workpiece stage of the invention of the second embodiment.
相對於在第1實施形態的工件台6中以放射狀形成3列第1真空吸附孔群61，如該圖所示，該工件台6係以放射狀形成4列，在這方面有所不同。在本實施形態之工件台6中，亦可具有與第1實施形態之工件台6相同的功能。In the workpiece stage 6 of the first embodiment, three rows of the first vacuum adsorption holes 61 are radially formed. As shown in the figure, the workpiece stage 6 is formed in four rows in a radial manner, which is different in this respect. . The workpiece stage 6 of the present embodiment may have the same function as the workpiece stage 6 of the first embodiment.
將上述各實施形態之發明之工件台要點彙整如下。第1，形成在工件台6表面的真空吸附手段61、62係形成為孔而非溝。藉此，可防止因洩漏所造成之真空吸附壓力的降低。第2，以放射狀形成的第1真空吸附孔群61的真空吸附孔X的圓周方向相鄰形成的真空吸附孔係設為第2真空吸附孔群62的真空吸附孔Y。其中，在第2真空吸附孔群62的真空吸附孔Y的圓周方向相鄰可具有第2真空吸附孔群62的真空吸附孔Y。藉此，將翹曲成碗形之工件5先朝1個部位(或1列)以直徑方向吸附，接著朝圓周方向吸附。因此，工件5係慢慢被矯正翹曲，而被吸附在工件台6全面。The points of the workpiece stage of the invention of each of the above embodiments are summarized as follows. First, the vacuum suction means 61, 62 formed on the surface of the workpiece stage 6 are formed as holes instead of grooves. Thereby, the decrease in the vacuum adsorption pressure due to the leakage can be prevented. Second, the vacuum adsorption holes formed adjacent to each other in the circumferential direction of the vacuum suction holes X of the first vacuum adsorption holes 61 formed in the radial direction are the vacuum adsorption holes Y of the second vacuum adsorption holes 62. In the vacuum suction hole Y of the second vacuum adsorption hole group 62, the vacuum adsorption hole Y of the second vacuum adsorption hole group 62 may be adjacent to each other in the circumferential direction. Thereby, the workpiece 5 which is warped into a bowl shape is first adsorbed in one direction (or one row) in the diametric direction, and then adsorbed in the circumferential direction. Therefore, the workpiece 5 is slowly corrected to warp and is adsorbed on the workpiece table 6 in an all-round manner.
1．．．曝光裝置1. . . Exposure device
2．．．光照射部2. . . Light irradiation department
3．．．遮罩3. . . Mask
4．．．遮罩台4. . . Masking station
5．．．工件5. . . Workpiece
6．．．工件台6. . . Workpiece table
7．．．投影透鏡7. . . Projection lens
21．．．燈twenty one. . . light
22．．．反射鏡twenty two. . . Reflector
61．．．第1真空吸附孔群61. . . First vacuum adsorption hole group
62．．．第2真空吸附孔群62. . . Second vacuum adsorption hole group
63．．．第1真空配管63. . . First vacuum piping
64．．．第2真空配管64. . . Second vacuum piping
65．．．第1電磁閥65. . . 1st solenoid valve
66．．．第2電磁閥66. . . 2nd solenoid valve
67．．．控制部67. . . Control department
71．．．第1真空配管71. . . First vacuum piping
72．．．第2真空配管72. . . Second vacuum piping
81．．．第1電磁閥81. . . 1st solenoid valve
82．．．第2電磁閥82. . . 2nd solenoid valve
100．．．曝光裝置100. . . Exposure device
101．．．光照射部101. . . Light irradiation department
102．．．遮罩102. . . Mask
103．．．遮罩台103. . . Masking station
104．．．工件104. . . Workpiece
105．．．工件台105. . . Workpiece table
106．．．投影透鏡106. . . Projection lens
1011．．．燈1011. . . light
1012．．．反射鏡1012. . . Reflector
1051．．．真空吸附溝(或複數真空吸附孔)1051. . . Vacuum adsorption groove (or multiple vacuum adsorption holes)
1052．．．配管1052. . . Piping
107．．．電磁閥107. . . The electromagnetic valve
108．．．控制部108. . . Control department
201．．．晶圓201. . . Wafer
2011．．．周邊部2011. . . Peripheral part
2012．．．中央部2012. . . Central department
202．．．晶圓202. . . Wafer
2021．．．周邊部2021. . . Peripheral part
301．．．工件台301. . . Workpiece table
3011．．．真空吸附溝3011. . . Vacuum adsorption ditch
302．．．晶圓302. . . Wafer
3021．．．周邊部3021. . . Peripheral part
303．．．工件台303. . . Workpiece table
3031．．．真空吸附孔3031. . . Vacuum adsorption hole
304．．．晶圓304. . . Wafer
3041．．．中央部3041. . . Central department
3042．．．周邊部3042. . . Peripheral part
401．．．工件台401. . . Workpiece table
4011．．．第1真空吸附溝4011. . . First vacuum adsorption groove
4012．．．第2真空吸附溝4012. . . Second vacuum adsorption groove
4013．．．第3真空吸附溝4013. . . Third vacuum adsorption ditch
402．．．晶圓402. . . Wafer
4021．．．晶圓402接近工件台401的部分4021. . . The wafer 402 is adjacent to the portion of the workpiece table 401
X．．．第1真空吸附孔群61的真空吸附孔X. . . Vacuum adsorption hole of the first vacuum adsorption hole group 61
Y．．．第2真空吸附孔群62的真空吸附孔Y. . . Vacuum adsorption hole of the second vacuum adsorption hole group 62
第1圖係顯示具備有第1實施形態之發明之工件台之曝光裝置之構成的剖面圖。Fig. 1 is a cross-sectional view showing the configuration of an exposure apparatus including a workpiece stage according to the first embodiment.
第2圖係第1圖所示之工件台6的放大平面圖。Fig. 2 is an enlarged plan view of the workpiece stage 6 shown in Fig. 1.
第3圖係由第2圖之A-A剖面及B-B剖面所觀看的工件台6的放大剖面圖。Fig. 3 is an enlarged cross-sectional view of the workpiece stage 6 as viewed from the A-A section and the B-B section of Fig. 2.
第4圖係顯示由第2圖之A-A剖面所觀看之工件被吸附保持在工件台全面之過程的示意圖。Fig. 4 is a view showing a process in which the workpiece viewed from the A-A section of Fig. 2 is adsorbed and held in the entire stage of the workpiece stage.
第5圖係顯示由第2圖之B-B剖面所觀看之工件被吸附保持在工件台全面之過程的示意圖。Fig. 5 is a view showing a process in which the workpiece viewed from the section B-B of Fig. 2 is adsorbed and held in the entire stage of the workpiece stage.
第6圖係顯示由工件台的表面所觀看之工件被吸附保持在工件台全面之過程的示意圖。Figure 6 is a schematic view showing the process in which the workpiece viewed from the surface of the workpiece stage is adsorbed and held in the entire stage of the workpiece stage.
第7圖係第2實施形態之發明之工件台的放大平面圖。Fig. 7 is an enlarged plan view showing a workpiece stage of the invention of the second embodiment.
第8圖係顯示習知技術之具備有將工件作吸附保持之工件台的曝光裝置的構成剖面圖。Fig. 8 is a cross-sectional view showing the configuration of an exposure apparatus having a workpiece stage for holding and holding a workpiece by a conventional technique.
第9圖係顯示翹曲成碗形之晶圓及周邊部呈波狀變形之晶圓的正面圖。Fig. 9 is a front view showing a wafer which is warped into a bowl shape and a wafer whose peripheral portion is corrugated.
第10圖係顯示習知技術之工件台無法吸附翹曲成碗形之晶圓之態樣的剖面圖。Fig. 10 is a cross-sectional view showing a state in which a workpiece stage of the prior art cannot adsorb a wafer that is warped into a bowl shape.
第11圖係顯示其他習知技術之工件台無法吸附翹曲成碗形之晶圓之態樣的剖面圖。Fig. 11 is a cross-sectional view showing a state in which a workpiece stage of another conventional technique cannot adsorb a wafer which is warped into a bowl shape.
6．．．工件台6. . . Workpiece table
61．．．第1真空吸附孔群61. . . First vacuum adsorption hole group
62．．．第2真空吸附孔群62. . . Second vacuum adsorption hole group
71．．．第1真空配管7171. . . First vacuum piping 71
72．．．第2真空配管7272. . . Second vacuum piping 72
X．．．第1真空吸附孔群61的真空吸附孔X. . . Vacuum adsorption hole of the first vacuum adsorption hole group 61
Y．．．第2真空吸附孔群62的真空吸附孔Y. . . Vacuum adsorption hole of the second vacuum adsorption hole group 62
Claims (2)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009021150A JP5126091B2 (en) | 2009-02-02 | 2009-02-02 | Work stage and exposure apparatus using the work stage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201030476A TW201030476A (en) | 2010-08-16 |
| TWI385489B true TWI385489B (en) | 2013-02-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW098141001A TWI385489B (en) | 2009-02-02 | 2009-12-01 | A workpiece table and an exposure apparatus using the work table |
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| Country | Link |
|---|---|
| JP (1) | JP5126091B2 (en) |
| KR (1) | KR101203356B1 (en) |
| CN (1) | CN101794726B (en) |
| TW (1) | TWI385489B (en) |
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| JP5810517B2 (en) | 2010-12-02 | 2015-11-11 | 富士電機株式会社 | Adsorption device and adsorption method |
| JP2012251763A (en) * | 2011-05-12 | 2012-12-20 | Sharp Corp | Apparatus and method for drying electrode |
| TWI505400B (en) * | 2011-08-26 | 2015-10-21 | Lg Siltron Inc | Susceptor |
| CN103219259B (en) * | 2012-01-19 | 2017-09-12 | 昆山思拓机器有限公司 | A kind of wafer processing jig |
| KR101334085B1 (en) * | 2012-05-11 | 2013-12-02 | 쿠어스텍아시아 유한회사 | Wafer supporting unit |
| JP2015220286A (en) * | 2014-05-15 | 2015-12-07 | 住友電気工業株式会社 | On-resistance measuring method for semiconductor element and on-resistance measuring device for semiconductor element |
| JP6727069B2 (en) * | 2016-08-09 | 2020-07-22 | 東京エレクトロン株式会社 | Joining device and joining system |
| CN106154769A (en) * | 2016-08-25 | 2016-11-23 | 中国电子科技集团公司第十研究所 | Thin film circuit ceramics with holes photoetching vacuum fixture |
| JP6949521B2 (en) * | 2017-03-26 | 2021-10-13 | 株式会社アドテックエンジニアリング | Exposure equipment, operation method of exposure equipment, and substrate sticking prevention film |
| JP6952515B2 (en) * | 2017-06-30 | 2021-10-20 | Ｔｏｗａ株式会社 | Work transfer device, electronic component manufacturing device, workpiece transfer method, and electronic component manufacturing method |
| CN108735586B (en) | 2017-06-30 | 2021-05-28 | 上海微电子装备（集团）股份有限公司 | Vacuumizing device and vacuumizing method |
| SG11202004896TA (en) * | 2017-09-28 | 2020-06-29 | Shinkawa Kk | Suction stage |
| JP6986317B2 (en) * | 2017-12-05 | 2021-12-22 | 株式会社アドテックエンジニアリング | Mask unit and exposure equipment |
| CN108364904A (en) * | 2018-02-11 | 2018-08-03 | 武汉华星光电半导体显示技术有限公司 | Vacuum discrete absorption platform |
| CN110320758B (en) * | 2018-03-30 | 2021-06-29 | 上海微电子装备（集团）股份有限公司 | Substrate edge protection device, photoetching equipment and protection method |
| KR102204884B1 (en) * | 2018-09-27 | 2021-01-19 | 세메스 주식회사 | Transfer robot and Apparatus for treating substrate with the robot |
| CN109856827A (en) * | 2019-03-26 | 2019-06-07 | 深圳市华星光电技术有限公司 | Absorption type microscope carrier |
| JP2021019082A (en) * | 2019-07-19 | 2021-02-15 | 株式会社ジャパンディスプレイ | Substrate for transcribing |
| CN110703473B (en) * | 2019-10-29 | 2022-05-31 | 武汉华星光电技术有限公司 | Equipment for binding vacuum adsorption base and display panel |
| JP6861872B2 (en) * | 2020-05-01 | 2021-04-21 | 東京エレクトロン株式会社 | Joining equipment and joining system |
| CN112847015B (en) * | 2021-01-11 | 2022-07-19 | 中国科学院西安光学精密机械研究所 | Device and method for processing optical element by cooperation of multiple robots |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101794726B (en) | 2013-07-03 |
| JP5126091B2 (en) | 2013-01-23 |
| TW201030476A (en) | 2010-08-16 |
| KR101203356B1 (en) | 2012-11-20 |
| JP2010177607A (en) | 2010-08-12 |
| CN101794726A (en) | 2010-08-04 |
| KR20100089016A (en) | 2010-08-11 |
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