JP2006310697A - Vacuum chuck - Google Patents

Vacuum chuck Download PDF

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JP2006310697A
JP2006310697A JP2005134305A JP2005134305A JP2006310697A JP 2006310697 A JP2006310697 A JP 2006310697A JP 2005134305 A JP2005134305 A JP 2005134305A JP 2005134305 A JP2005134305 A JP 2005134305A JP 2006310697 A JP2006310697 A JP 2006310697A
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region
substrate
suction
area
mounting surface
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Akihiko Morita
彰彦 森田
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Dainippon Screen Manufacturing Co Ltd
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Dainippon Screen Manufacturing Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum chuck capable of preventing deformation of a substrate during vacuum holding without increasing a contact area with the substrate. <P>SOLUTION: In the vacuum chuck 10, a supporting unit 32 in a projected shape for fitting to a lower face of a substrate is formed on a mounting face 31. A region on the mounting face 31 other than the supporting unit 32 is divided by the supporting unit 32 into an air released region 33 and a pressure reduction region 34. The air released region 33 is four sectorial regions surrounded by the supporting unit 32, and a joining through-hole 35 joined mutually to the atmosphere around the chuck is drilled at each air released region 33. The pressure reduced region 34 includes an annular region 34a which is formed annularly around the circumferential part of the mounting face 31, and a joining through region 34b which extends continuously from the center of the mounting face 31 to the annular region 34a. At the central part, a sucking hole 36 is provided for performing vacuum suction. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

この発明は、半導体基板、液晶表示装置用ガラス基板、フォトマスク用ガラス基板、光ディスク用基板等(以下、単に「基板」と称する)を載置し、その下面を真空吸引することによって該基板を吸着保持する吸着チャックに関する。   In the present invention, a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk or the like (hereinafter simply referred to as “substrate”) is placed, and the lower surface is vacuum-sucked to place the substrate. The present invention relates to a suction chuck for suction holding.

基板を回転させつつレジスト塗布処理を行う回転式塗布処理装置(スピンコータ)においては、高速回転される基板の上面にフォトレジスト液を吐出し、基板の回転に伴う遠心力によってフォトレジスト液を基板上面に均一に拡げて塗布している。このときに、基板の下面側中央部近傍が吸着チャックによって真空吸着されることにより、モータの回転駆動力が基板に伝達されるとともに、高速回転によっても基板が飛ばないようにされている。   In a rotary coating processing apparatus (spin coater) that performs a resist coating process while rotating a substrate, a photoresist solution is discharged onto the upper surface of a substrate that is rotated at a high speed, and the photoresist solution is removed by a centrifugal force accompanying the rotation of the substrate. It is spread and applied evenly. At this time, the vicinity of the central portion on the lower surface side of the substrate is vacuum-sucked by the suction chuck, whereby the rotational driving force of the motor is transmitted to the substrate and the substrate is prevented from flying even by high-speed rotation.

このような真空吸着によって基板を保持するタイプの吸着チャックとしては、従来より特許文献1,2に開示されているようなものが利用されていた。すなわち、吸着チャックの載置面に同心円状に複数のリング状支持部を設けるとともに、隣接するリング状支持部の間の溝を真空吸引口と連通させ、リング状支持部に基板下面を接触させた状態にてリング状支持部間の溝を減圧状態とすることによって基板を吸着保持するタイプの吸着チャックが一般的に広く利用されていた。また、基板裏面を真空吸着するタイプの吸着チャックは、回転式塗布処理装置だけでなく現像装置、洗浄装置の他に研削装置等にも利用されている(特許文献3参照)。   As a suction chuck of the type that holds the substrate by such vacuum suction, those disclosed in Patent Documents 1 and 2 have been used. That is, a plurality of ring-shaped support portions are provided concentrically on the mounting surface of the suction chuck, and a groove between adjacent ring-shaped support portions is communicated with the vacuum suction port so that the lower surface of the substrate is brought into contact with the ring-shaped support portion. In general, a suction chuck of a type that sucks and holds a substrate by reducing the groove between the ring-shaped support portions in a reduced pressure state has been widely used. A suction chuck of the type that vacuum-sucks the back surface of the substrate is used not only for a rotary coating processing apparatus but also for a developing apparatus and a cleaning apparatus, as well as a grinding apparatus (see Patent Document 3).

ところが、このような吸着チャックを使用すると、基板裏面に汚染(吸着痕)が生じやすいという問題があった。これは、吸着チャックの載置面のうちのかなりの面積を支持部が占めており、吸着保持の際にはそれらが一斉に基板下面に当接して押圧されるため、その接触部分においてスクラッチやパーティクル転写が生じ易いことに起因している。   However, when such a suction chuck is used, there is a problem that contamination (suction marks) tends to occur on the back surface of the substrate. This is because the support portion occupies a considerable area of the placement surface of the suction chuck, and when sucking and holding, they are all brought into contact with and pressed against the lower surface of the substrate. This is because particle transfer is likely to occur.

一方、近年、基板のサイズが大型化しており、半導体ウェハーではφ200mmからφ300mmに移行しつつある。基板のサイズが大きくなると、確実な基板保持および駆動力伝達のために吸着チャックの載置面も大きくせざるを得ない。そうすると、支持部の面積(つまり接触面積)もさらに大きくなり、基板裏面への汚染が益々増加するという問題が生じる。   On the other hand, in recent years, the size of substrates has increased, and semiconductor wafers are shifting from φ200 mm to φ300 mm. When the size of the substrate increases, the mounting surface of the suction chuck must be increased for reliable substrate holding and driving force transmission. If it does so, the area (namely, contact area) of a support part will also become larger, and the problem that the contamination to the back surface of a board | substrate increases will arise.

このため、載置面に散点状に支持部を配設することにより接触面積を低減した吸着チャックも提案されている(例えば特許文献4参照)。これによれば、基板の大型化に伴って吸着チャックの載置面を大きくしたとしても、接触面積の増大を抑制することができるため、基板下面への汚染増大も防止することが可能となる。   For this reason, a suction chuck in which a contact area is reduced by disposing support portions in a dotted shape on the mounting surface has also been proposed (see, for example, Patent Document 4). According to this, even if the mounting surface of the suction chuck is increased with an increase in the size of the substrate, an increase in the contact area can be suppressed, so that an increase in contamination on the lower surface of the substrate can be prevented. .

特開昭64−75072号公報JP-A 64-75072 特開平10−112495号公報JP-A-10-112495 特開2004−114184号公報JP 2004-114184 A 特開平7−211678号公報Japanese Patent Laid-Open No. 7-21678

しかしながら、接触面積を低減させることは、真空吸着時に減圧状態となる減圧領域が増大することを意味する。図6は、このような低接触面積タイプの吸着チャックにて基板を吸着保持したときの状態を模式的に示す図である。吸着チャック101の上面(載置面)には散点状に基板支持部102が配置されており、載置面のうち基板支持部102以外の領域が減圧領域となる。減圧領域においては、吸着保持時に外気圧との差圧が基板Wに作用する。基板支持部102の接触面積が低下して減圧領域が増大すると、図6に示すように、外気圧との差圧によって基板支持部102の間において基板Wが大きく撓むこととなる。   However, reducing the contact area means increasing the reduced pressure region that is in a reduced pressure state during vacuum adsorption. FIG. 6 is a diagram schematically showing a state when the substrate is sucked and held by such a low contact area type suction chuck. Substrate support portions 102 are arranged in a dotted pattern on the upper surface (mounting surface) of the suction chuck 101, and a region other than the substrate support portion 102 on the mounting surface is a reduced pressure region. In the reduced pressure region, a differential pressure with respect to the external pressure acts on the substrate W during adsorption holding. When the contact area of the substrate support portion 102 decreases and the reduced pressure region increases, the substrate W is greatly bent between the substrate support portions 102 due to a differential pressure from the external air pressure, as shown in FIG.

図6に示す如く大きく撓んだ基板Wを回転させつつレジスト塗布処理を行うと、基板Wの上面に均一にフォトレジスト液を塗布することができない、いわゆる塗布ムラを生じるという問題があった。   When the resist coating process is performed while rotating the substrate W that is greatly bent as shown in FIG. 6, there is a problem that a so-called coating unevenness is caused in which the photoresist solution cannot be uniformly applied to the upper surface of the substrate W.

本発明は、上記課題に鑑みてなされたものであり、基板との接触面積を増加させることなく、しかも吸着保持時の基板変形を抑制することができる吸着チャックを提供することを目的とする。   The present invention has been made in view of the above problems, and an object of the present invention is to provide a suction chuck that can suppress deformation of the substrate during suction holding without increasing the contact area with the substrate.

上記課題を解決するため、請求項1の発明は、載置した基板の下面を真空吸引することによって該基板を吸着保持する吸着チャックにおいて、基板を載置するための載置面と、前記載置面に凸状に設けられ、前記載置面上に載置した基板の下面に当接して該基板を支持する支持部と、を備え、前記載置面を前記支持部によって減圧領域と大気開放領域とに仕切り、前記減圧領域および前記大気開放領域を前記支持部によって囲まれた閉じた領域とし、前記減圧領域に外部の真空吸引手段と連通する吸引口を穿設し、前記大気開放領域にチャック周辺の雰囲気と連通する連通穴を穿設し、前記減圧領域に、前記載置面の周縁部に沿って環状に周設された環状領域および前記載置面の中心部から前記環状領域に向けて連続して設けられた連通領域を有する。   In order to solve the above-mentioned problem, the invention of claim 1 is a suction chuck for sucking and holding a substrate by vacuum suction of the lower surface of the substrate, and a mounting surface for mounting the substrate; And a support portion that is provided in a convex shape on the mounting surface and supports the substrate by contacting the lower surface of the substrate placed on the mounting surface. Partitioning into an open area, the decompression area and the atmosphere release area are closed areas surrounded by the support, and a suction port communicating with an external vacuum suction means is formed in the decompression area, and the atmosphere release area A communication hole that communicates with the atmosphere around the chuck, and an annular region that is annularly provided along the peripheral edge of the placement surface and the annular region from the center of the placement surface. Continuous communication area A.

また、請求項2の発明は、請求項1の発明に係る吸着チャックにおいて、前記連通領域を前記載置面の中心部から前記環状領域に向けて直線状に配設する。   According to a second aspect of the present invention, in the suction chuck according to the first aspect of the invention, the communication area is linearly arranged from the center of the mounting surface toward the annular area.

また、請求項3の発明は、請求項1または請求項2の発明に係る吸着チャックにおいて、前記連通領域を前記載置面の中心部から前記環状領域に向けて放射状に配設する。   According to a third aspect of the present invention, in the suction chuck according to the first or second aspect of the present invention, the communication area is arranged radially from the center of the mounting surface toward the annular area.

また、請求項4の発明は、請求項1から請求項3のいずれかの発明に係る吸着チャックにおいて、前記吸引口を前記載置面の中心部に穿設する。   According to a fourth aspect of the present invention, in the suction chuck according to any one of the first to third aspects, the suction port is formed in a central portion of the mounting surface.

請求項1の発明によれば、基板の吸着保持に直接には寄与しない大気開放領域を吸着チャックの載置面上に形成し、基板との接触面積を増加させることなく、減圧領域の面積増加をも抑制して吸着保持時の基板変形を抑制することができる。   According to the first aspect of the present invention, the air release region that does not directly contribute to the suction holding of the substrate is formed on the mounting surface of the suction chuck, and the area of the decompression region is increased without increasing the contact area with the substrate. It is also possible to suppress substrate deformation during adsorption holding.

また、請求項2の発明によれば、連通領域を載置面の中心部から環状領域に向けて直線状に配設しているため、減圧領域全体を迅速に減圧状態にすることができる。   According to the invention of claim 2, since the communication area is linearly arranged from the center portion of the mounting surface toward the annular area, the entire decompression area can be quickly brought into a decompressed state.

また、請求項3の発明によれば、連通領域を載置面の中心部から環状領域に向けて放射状に配設しているため、減圧領域全体を迅速に減圧状態にすることができる。   According to the invention of claim 3, since the communication area is arranged radially from the center portion of the mounting surface toward the annular area, the entire decompression area can be quickly brought into a decompressed state.

また、請求項4の発明によれば、吸引口を載置面の中心部に穿設しているため、反った基板であっても中心部から周縁部に向けて連通領域に沿って順次吸着チャックに平坦な状態に矯正されて吸着保持されることとなる。   According to the invention of claim 4, since the suction port is formed in the center portion of the mounting surface, even the warped substrate is sequentially sucked along the communication region from the center portion toward the peripheral portion. The chuck is corrected to a flat state and is sucked and held.

以下、図面を参照しつつ本発明の実施の形態について詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図1は、本発明に係る吸着チャックが組み込まれた基板処理装置の一例を示す要部断面図である。この基板処理装置1は、略円形の半導体ウェハである基板Wを回転させつつレジスト塗布処理を行う回転式塗布処理装置である。   FIG. 1 is a cross-sectional view of an essential part showing an example of a substrate processing apparatus in which a suction chuck according to the present invention is incorporated. The substrate processing apparatus 1 is a rotary coating processing apparatus that performs a resist coating process while rotating a substrate W that is a substantially circular semiconductor wafer.

基板処理装置1は、載置した基板Wの下面を真空吸引することによって該基板Wを水平姿勢にて真空吸着保持する吸着チャック10を備える。吸着チャック10は、図示を省略する電動モータの駆動によって鉛直方向に沿った軸心まわりで回転する回転軸2の上端に一体回転可能に取り付けられている。また、吸着チャック10は、中空の回転軸2を介して例えば真空ポンプ等の真空吸引手段と連通されている。   The substrate processing apparatus 1 includes a suction chuck 10 that vacuum-sucks and holds the substrate W in a horizontal posture by vacuum suction of the lower surface of the placed substrate W. The suction chuck 10 is attached to an upper end of a rotating shaft 2 that rotates about an axis along the vertical direction by driving of an electric motor (not shown) so as to be integrally rotatable. Further, the suction chuck 10 is communicated with a vacuum suction means such as a vacuum pump through a hollow rotating shaft 2.

また、基板処理装置1は、カップ5およびレジスト吐出ノズル9を備える。カップ5は、吸着チャック10によって吸着保持された基板Wの周囲を囲むように囲繞する。カップ5は、回転する基板Wから飛散した処理液(ここではフォトレジスト液)を回収して下部の排液口5aへと導く。また、レジスト吐出ノズル9は、図外のレジスト送給部と連通接続されており、該レジスト送給部から送給されたレジストを回転する基板Wの上面中心部近傍に吐出する。   Further, the substrate processing apparatus 1 includes a cup 5 and a resist discharge nozzle 9. The cup 5 surrounds the periphery of the substrate W sucked and held by the suction chuck 10. The cup 5 collects the processing liquid (here, photoresist liquid) scattered from the rotating substrate W and guides it to the lower drainage port 5a. The resist discharge nozzle 9 is connected in communication with a resist feed unit (not shown), and discharges the resist fed from the resist feed unit to the vicinity of the center of the upper surface of the rotating substrate W.

この基板処理装置1にてレジスト塗布処理を行う際には、まず吸着チャック10の載置面上に基板Wを載置して真空吸着保持する。その後、回転軸2および吸着チャック10を介して基板Wを鉛直軸まわりで回転させつつ、その回転する基板Wの上面中心部にレジスト吐出ノズル9からフォトレジスト液を吐出する。滴下されたフォトレジスト液は、基板Wの回転に伴う遠心力によって基板Wの上面に均一に拡がりレジスト膜を形成する。なお、基板Wから飛散したフォトレジスト液はカップ5によって受け止められて排液口5aから排出される。   When the resist coating process is performed by the substrate processing apparatus 1, first, the substrate W is placed on the placement surface of the suction chuck 10 and held by vacuum suction. Thereafter, the photoresist solution is discharged from the resist discharge nozzle 9 to the center of the upper surface of the rotating substrate W while rotating the substrate W around the vertical axis via the rotating shaft 2 and the suction chuck 10. The dropped photoresist solution spreads uniformly on the upper surface of the substrate W by a centrifugal force accompanying the rotation of the substrate W to form a resist film. Note that the photoresist liquid scattered from the substrate W is received by the cup 5 and discharged from the liquid discharge port 5a.

次に、吸着チャック10についてさらに詳細に説明する。図2は、吸着チャック10の外観斜視図である。また、図3は吸着チャック10を上面から見た平面図であり、図4は吸着チャック10を図3のV−V線に沿って見た側断面図である。   Next, the suction chuck 10 will be described in more detail. FIG. 2 is an external perspective view of the suction chuck 10. 3 is a plan view of the suction chuck 10 as viewed from above, and FIG. 4 is a side sectional view of the suction chuck 10 as viewed along the line V-V in FIG.

吸着チャック10は、基板載置部30および接続軸20によって構成されている。基板載置部30および接続軸20は、例えば高分子化合物であるピーク材(ポリエーテルエーテルケトン:PEEK)によって一体成形される。なお、吸着チャック10の材質はピーク材に限定されるものではない。また、吸着チャック10の絶縁性を下げて静電気の帯電を防止するために、カーボン等の導電性微粉をピーク材に混合するようにしてもよい。   The suction chuck 10 is composed of a substrate mounting portion 30 and a connection shaft 20. The substrate mounting portion 30 and the connecting shaft 20 are integrally formed of, for example, a peak material (polyether ether ketone: PEEK) that is a polymer compound. The material of the suction chuck 10 is not limited to the peak material. Further, in order to lower the insulating property of the suction chuck 10 and prevent static charge, conductive fine powder such as carbon may be mixed with the peak material.

基板載置部30は、基板Wの径よりも小さな径を有する円盤状部材である。基板載置部30の下面中央部に円筒状の接続軸20が垂設されている。接続軸20の外径は基板載置部30の径よりも小さい。接続軸20の下端には回転軸2の外径と略同じ内径を有する嵌入穴21が形成されており、ここに回転軸2の上端部が挿入される。嵌入穴21の内側には、ここに挿入された回転軸2と吸着チャック10とが一体回転するようにするために、回転軸2の上部外周に形成されている突起が係合する図示省略の切欠部が刻設されている。なお、嵌入穴21の内側に切欠部を設けるのに代えて、別体の接続ピンによって接続軸20を回転軸2の上端に取り付けることにより、回転軸2と吸着チャック10とが一体回転するようにしても良い。   The substrate platform 30 is a disk-shaped member having a diameter smaller than the diameter of the substrate W. A cylindrical connection shaft 20 is provided vertically at the center of the lower surface of the substrate platform 30. The outer diameter of the connection shaft 20 is smaller than the diameter of the substrate platform 30. A fitting hole 21 having an inner diameter substantially the same as the outer diameter of the rotating shaft 2 is formed at the lower end of the connecting shaft 20, and the upper end portion of the rotating shaft 2 is inserted therein. A projection formed on the outer periphery of the upper portion of the rotating shaft 2 engages with the inside of the insertion hole 21 so that the rotating shaft 2 and the suction chuck 10 inserted here rotate integrally. Notch is engraved. Instead of providing the notch inside the insertion hole 21, the connecting shaft 20 is attached to the upper end of the rotating shaft 2 with a separate connecting pin so that the rotating shaft 2 and the suction chuck 10 rotate integrally. Anyway.

基板載置部30の上面は基板Wを載置するための載置面31とされている。載置面31上には支持部32が凸状に設けられている。本実施形態において支持部32は、載置面31の周端部に沿って円環状に凸設されるとともに、その円環状支持部32の内側にも4つの中心角90°の扇形を形成するように凸設されている。すなわち、載置面31の周端部に沿って凸設された円環状の支持部32の内側に4つの中心角90°の扇形が形成され、それら扇形の形状を規定する周部(扇形の弧と半径)も載置面31上に凸設された支持部32によって構成されているのである。これら4つの扇形は、吸着チャック10の回転軸Xのまわりに90°おきに形成される。また、円環状の支持部32と扇形状の支持部32の高さは等しい。従って、載置面31上に基板Wを載置したときには、円環状の支持部32および扇形状の支持部32の全てが基板Wの下面に当接して該基板Wを支持することとなる。   The upper surface of the substrate platform 30 is a placement surface 31 on which the substrate W is placed. On the mounting surface 31, a support portion 32 is provided in a convex shape. In the present embodiment, the support portion 32 is formed in an annular shape along the peripheral end portion of the mounting surface 31, and also forms a sector shape with four central angles of 90 ° inside the annular support portion 32. As shown in FIG. That is, four fan-shaped parts with a central angle of 90 ° are formed inside an annular support part 32 protruding along the peripheral end of the mounting surface 31, and the peripheral parts (fan-shaped The arc and the radius are also constituted by the support portion 32 protruding on the mounting surface 31. These four sectors are formed around the rotation axis X of the suction chuck 10 every 90 °. Further, the annular support portion 32 and the fan-shaped support portion 32 have the same height. Therefore, when the substrate W is placed on the placement surface 31, all of the annular support portion 32 and the fan-shaped support portion 32 come into contact with the lower surface of the substrate W to support the substrate W.

載置面31のうち支持部32以外の領域は、支持部32によって2つの領域に仕切られることとなる。まず、扇形状の支持部32によって囲まれた領域は大気開放領域33とされる。大気開放領域33は、中心角90°の扇形領域であって載置面31上に4つ設けられることとなる。次に、大気開放領域33を除く領域は減圧領域34とされる。図2,3に示すように、大気開放領域33および減圧領域34は支持部32によって囲まれた閉じた領域である。また、載置面31上に基板Wを載置したときに、大気開放領域33および減圧領域34はともに基板Wの下面と接触しない。   A region of the placement surface 31 other than the support portion 32 is partitioned into two regions by the support portion 32. First, an area surrounded by the fan-shaped support portion 32 is an air release area 33. The air release area 33 is a fan-shaped area having a central angle of 90 °, and four are provided on the placement surface 31. Next, the area excluding the atmosphere release area 33 is a decompression area 34. As shown in FIGS. 2 and 3, the atmosphere release region 33 and the decompression region 34 are closed regions surrounded by the support portion 32. Further, when the substrate W is placed on the placement surface 31, neither the atmosphere release region 33 nor the decompression region 34 is in contact with the lower surface of the substrate W.

さらに、減圧領域34は、環状領域34aおよび連通領域34bを有する。環状領域34aは、円環状の支持部32と扇形状の支持部32の弧との間に形成された円環溝状領域である。つまり、環状領域34aは、円環状の支持部32に内接しており、載置面31の周縁部に沿って環状に周設される。一方、連通領域34bは、扇形状の支持部32相互間に位置する直線溝状領域である。連通領域34bは、載置面31の中心部から環状領域34aに向けて直線状に連続して形成されおり、本実施形態では十字形状に配設される。   Further, the decompression region 34 has an annular region 34a and a communication region 34b. The annular region 34 a is an annular groove-shaped region formed between the annular support portion 32 and the arc of the fan-shaped support portion 32. That is, the annular region 34 a is inscribed in the annular support portion 32 and is annularly provided along the peripheral edge portion of the placement surface 31. On the other hand, the communication area 34b is a linear groove area located between the fan-shaped support portions 32. The communication region 34b is continuously formed linearly from the center of the placement surface 31 toward the annular region 34a, and is arranged in a cross shape in this embodiment.

4つの大気開放領域33のそれぞれには連通穴35が一つずつ設けられている。連通穴35は、基板載置部30の上面(載置面31)から下面に貫通して穿設されている。よって、大気開放領域33においては、基板載置部30の上面側雰囲気と下面側雰囲気とが連通穴35を介して連通されることとなる。   One communication hole 35 is provided in each of the four atmospheric open areas 33. The communication hole 35 is drilled from the upper surface (mounting surface 31) of the substrate platform 30 to the lower surface. Therefore, in the atmosphere release region 33, the upper surface side atmosphere and the lower surface side atmosphere of the substrate platform 30 are communicated through the communication hole 35.

また、減圧領域34には吸引口36が穿設されている。吸引口36は、載置面31の回転中心部、すなわち減圧領域34の十字形状の中心部に一ヶ所穿設されている。吸引口36の上端部は載置面31側に開口しており、下端部は接続軸20の嵌入穴21と連通されている。嵌入穴21に挿入される回転軸2は中空円筒形状であり、その中空部分は例えば真空ポンプ等の真空吸引手段と連通されている。従って、吸引口36はチャック外部の真空吸引手段と連通されることとなり、該真空吸引手段を作動させると、回転軸2の中空部分および嵌入穴21を介して吸引口36に負圧を作用させることができる。   A suction port 36 is formed in the decompression area 34. The suction port 36 is formed in one place at the center of rotation of the mounting surface 31, that is, at the center of the cross shape of the decompression region 34. The upper end portion of the suction port 36 opens to the placement surface 31 side, and the lower end portion communicates with the insertion hole 21 of the connection shaft 20. The rotary shaft 2 inserted into the insertion hole 21 has a hollow cylindrical shape, and the hollow portion communicates with a vacuum suction means such as a vacuum pump. Accordingly, the suction port 36 communicates with the vacuum suction means outside the chuck, and when the vacuum suction means is operated, a negative pressure is applied to the suction port 36 through the hollow portion of the rotating shaft 2 and the fitting hole 21. be able to.

上記のような構成を有する吸着チャック10の載置面31に基板Wを載置すると、支持部32が基板Wの下面と接触する。このときに、大気開放領域33および減圧領域34はともに基板Wの下面と接触しない。この状態にて上記真空吸引手段を作動させると、吸引口36から減圧領域34の雰囲気が吸引される。本実施形態では連通領域34bの十字形状の中心に吸引口36が形設されており、まず連通領域34bの中心から順に雰囲気吸引がなされた後に環状領域34aの雰囲気が吸引されることとなる。その結果、減圧領域34と基板Wの下面とで形成される空間が減圧状態となり、吸着チャック10周辺雰囲気(大気圧)との差圧によって基板Wが支持部32に押圧される。このようにして基板Wが吸着チャック10に吸着保持されることとなる。   When the substrate W is placed on the placement surface 31 of the suction chuck 10 having the above configuration, the support portion 32 comes into contact with the lower surface of the substrate W. At this time, neither the atmosphere release region 33 nor the decompression region 34 is in contact with the lower surface of the substrate W. When the vacuum suction means is operated in this state, the atmosphere in the decompression region 34 is sucked from the suction port 36. In the present embodiment, the suction port 36 is formed at the center of the cross shape of the communication region 34b. First, the atmosphere in the annular region 34a is sucked after the atmosphere is sucked in order from the center of the communication region 34b. As a result, the space formed by the reduced pressure region 34 and the lower surface of the substrate W is in a reduced pressure state, and the substrate W is pressed against the support portion 32 by the differential pressure with respect to the atmosphere around the suction chuck 10 (atmospheric pressure). In this way, the substrate W is sucked and held by the suction chuck 10.

このときに、大気開放領域33においては、載置面31側の雰囲気と下面側雰囲気とが連通穴35を介して連通されている。従って、大気開放領域33と基板Wの下面とで形成される空間の気圧と吸着チャック10周辺雰囲気の気圧とは等しくなり、大気開放領域33においては差圧が生じないこととなる。これらの結果として、吸着チャック10に吸着保持される基板Wの側から見ると、載置面31の減圧領域34に対向するエリアでは周辺雰囲気からの圧力を受けて支持部32に押圧される一方、大気開放領域33に対向するエリアでは何らの圧力も作用せずストレスフリーの状態となっている。すなわち、大気開放領域33は、基板Wに接触する領域でもなく、基板Wに吸着圧力を作用させる領域でもなく、基板Wの吸着保持に直接には寄与しない領域となっている。   At this time, in the atmosphere release region 33, the atmosphere on the placement surface 31 side and the lower surface side atmosphere are communicated through the communication hole 35. Accordingly, the atmospheric pressure in the space formed by the atmosphere release region 33 and the lower surface of the substrate W is equal to the atmospheric pressure around the suction chuck 10, and no differential pressure is generated in the atmosphere release region 33. As a result, when viewed from the side of the substrate W sucked and held by the suction chuck 10, the area facing the decompression region 34 of the placement surface 31 receives pressure from the surrounding atmosphere and is pressed against the support portion 32. In the area facing the air release area 33, no pressure is applied and the area is stress free. In other words, the atmosphere release region 33 is not a region in contact with the substrate W, a region in which an adsorption pressure is applied to the substrate W, and a region that does not directly contribute to the adsorption holding of the substrate W.

従来の、吸着チャックにおいては、載置面が減圧領域および支持部のみによって構成されていたため、支持部の面積を小さくすると減圧領域の面積が大きくなり、逆に減圧領域の面積を小さくすると支持部の面積が大きくなっていた。既述したように、減圧領域の面積が大きくなると基板Wが大きく変形して塗布ムラ等が生じることとなり、支持部の面積が大きくなると接触面積の増大に起因した汚染等の問題が生じる。   In the conventional suction chuck, the mounting surface is composed only of the decompression region and the support portion. Therefore, if the area of the support portion is reduced, the area of the decompression region is increased, and conversely, if the area of the decompression region is reduced, the support portion. The area of was larger. As described above, when the area of the reduced pressure region is increased, the substrate W is greatly deformed to cause coating unevenness, and when the area of the support portion is increased, problems such as contamination due to an increase in the contact area occur.

そこで本実施形態においては、基板Wの吸着保持に直接には寄与しない大気開放領域33を敢えて吸着チャック10の載置面31上に形成し、基板Wとの接触面積を増加させることなく、減圧領域34の面積増加をも抑制しているのである。大気開放領域33を形成することによって吸着チャック10と基板Wとの接触面積増加を抑制できるため、基板Wの下面が支持部32から受けるダメージ(スクラッチ)および汚染転写を最小限にとどめることが可能となる。   Therefore, in the present embodiment, the atmosphere release region 33 that does not directly contribute to the suction holding of the substrate W is formed on the placement surface 31 of the suction chuck 10 to reduce the pressure without increasing the contact area with the substrate W. An increase in the area of the region 34 is also suppressed. Since the increase in the contact area between the suction chuck 10 and the substrate W can be suppressed by forming the air release region 33, damage (scratch) and contamination transfer that the lower surface of the substrate W receives from the support portion 32 can be minimized. It becomes.

また、大気開放領域33を形成することによって減圧領域34の面積増加も抑制できるため、吸着時に基板Wが変形応力を受けるエリアも低減することができ、その結果吸着保持時の基板Wの変形を抑制することができ、レジスト塗布処理時における塗布ムラの問題を改善することが可能となる。さらに、基板Wが変形応力を受けるエリアを低減することは、吸着保持時に基板Wの上面に形成されたデバイスにダメージを与えて破壊するリスクを低減することにも繋がる。   Further, since the increase in the area of the decompression region 34 can be suppressed by forming the atmosphere release region 33, the area where the substrate W is subjected to deformation stress at the time of suction can be reduced, and as a result, deformation of the substrate W at the time of suction holding can be reduced. Therefore, it is possible to improve the problem of coating unevenness during the resist coating process. Furthermore, reducing the area where the substrate W is subjected to deformation stress also leads to a reduction in the risk of damaging and destroying a device formed on the upper surface of the substrate W during suction holding.

ところで、本実施形態においては、減圧領域34を載置面31の周縁部に沿って環状に周設された環状領域34aと載置面31の中心部から環状領域34aに向けて連続して直線状に伸びる連通領域34bとで構成している。このようにしているのは以下のような理由による。まず、吸着保持時に、実際に吸着力が生じるのは減圧領域34を取り囲む支持部32と基板Wとの接触部分である。そして、回転軸2のトルクを確実に基板Wに伝達するためには、吸着力を生じる部分を可能な限り径の大きな円環状にする必要がある。つまり、本実施形態の如く載置面31の周縁部に沿って円環状に環状領域34aを設けることにより、回転軸2のトルクを確実に基板Wに伝達することができ、回転始動時や停止時に基板Wが吸着チャック10から外れたり滑ったりすることを防止できるのである。   By the way, in the present embodiment, the decompression region 34 is formed in an annular shape around the periphery of the mounting surface 31 in an annular manner, and the center of the mounting surface 31 is continuously linearly directed toward the annular region 34a. The communication area 34b extends in a shape. The reason for this is as follows. First, at the time of suction and holding, the suction force is actually generated at the contact portion between the support portion 32 surrounding the decompression region 34 and the substrate W. In order to reliably transmit the torque of the rotating shaft 2 to the substrate W, it is necessary to make the portion that generates the suction force an annular shape having a diameter as large as possible. That is, by providing the annular region 34a in an annular shape along the peripheral edge of the mounting surface 31 as in the present embodiment, the torque of the rotating shaft 2 can be reliably transmitted to the substrate W, and at the time of starting or stopping the rotation. At this time, it is possible to prevent the substrate W from coming off or slipping from the suction chuck 10.

また、実際の基板W、特に既に何層かの膜形成がなされた基板Wは、それ自体の性質として上側または下側に反ろうとしていることが多い。このような基板Wであってもレジスト塗布処理時には塗布ムラ等の欠陥を防止するために、水平方向に沿って平坦な状態で保持しなければならない。本実施形態の吸着チャック10によれば、載置面31の中心に設けられた吸引口36から吸引が行われるため、非定常状態では吸引口36近傍が最も吸引力が強く、反った基板Wであっても最初にその中心近傍が載置面31の中心に吸着されることとなる。そして、吸着力を生じさせる連通領域34bが載置面31の中心部から環状領域34aに向けて連続して伸びているため、基板Wは中心部から周縁部に向けて順次吸着されていくこととなる。従って、上下に撓んだ部分を生じさせることなく、基板Wを確実に平坦な状態に矯正して載置面31に吸着することができる。   In addition, the actual substrate W, particularly the substrate W on which several layers have already been formed, tends to warp upward or downward as a property of itself. Even such a substrate W must be held flat in the horizontal direction in order to prevent defects such as coating unevenness during the resist coating process. According to the suction chuck 10 of the present embodiment, since suction is performed from the suction port 36 provided at the center of the mounting surface 31, in the unsteady state, the suction force in the vicinity of the suction port 36 is the strongest and the warped substrate W is warped. Even so, the vicinity of the center is first attracted to the center of the mounting surface 31. Since the communication region 34b that generates the suction force continuously extends from the center portion of the placement surface 31 toward the annular region 34a, the substrate W is sequentially sucked from the center portion toward the peripheral portion. It becomes. Therefore, the substrate W can be surely corrected to a flat state and adsorbed to the mounting surface 31 without causing a vertically bent portion.

また、連通領域34bは載置面31の中心部から環状領域34aに向けて直線状に十字に伸びているため、環状領域34aの雰囲気をも円滑に吸引口36から排気することが可能となる。その結果、基板処理装置1の真空吸引手段が作動を開始してから短時間のうちに環状領域34aをも連通領域34bと同程度の定常減圧状態とすることができる。基板処理装置1においては、吸着チャック10が基板Wを確実に吸着したか否かをチェックするために吸着圧をモニタしているのであるが、そのセンサは回転軸2よりも真空吸引手段に近い側に設置されている。従って、真空吸引手段が作動を開始してから環状領域34aが減圧状態となるまでの時間が長いと、実際には吸着チャック10が基板Wを未だ吸着していないにも関わらず、基板処理装置1は吸着したものと判断して回転動作を開始するというようなトラブルが生じるおそれがある。本実施形態のようにすれば、連通領域34bは載置面31の中心部から環状領域34aに向けて直線状に十字に伸びており、環状領域34aをも迅速に定常的減圧状態とすることができるため、そのような問題は解消される。   Further, since the communication region 34b extends in a straight line from the center of the mounting surface 31 toward the annular region 34a, the atmosphere of the annular region 34a can be smoothly exhausted from the suction port 36. . As a result, the annular region 34a can be brought into a steady decompression state similar to that of the communication region 34b within a short time after the operation of the vacuum suction means of the substrate processing apparatus 1. In the substrate processing apparatus 1, the suction pressure is monitored in order to check whether or not the suction chuck 10 has reliably sucked the substrate W, but the sensor is closer to the vacuum suction means than the rotary shaft 2. It is installed on the side. Therefore, if the time from when the vacuum suction means starts operating until the annular region 34a is in the reduced pressure state is long, the substrate processing apparatus is actually not sucked by the suction chuck 10 yet. There is a possibility that a trouble such as 1 is judged to have attracted and starts rotating. According to the present embodiment, the communication area 34b extends in a cross shape linearly from the center of the mounting surface 31 toward the annular area 34a, and the annular area 34a is rapidly brought into a steady decompression state. Such a problem is solved.

以上、本発明の実施の形態について説明したが、この発明は上記の例に限定されるものではない。例えば、上記実施形態においては、載置面31を回転軸Xのまわりに4分割して中心角90°の扇形の大気開放領域33を4つ設けるようにしていたが、図5に示すように8分割して中心角45°の扇形の大気開放領域33を8つ設けるようにしても良い。図5に示す例においては、大気開放領域33が8つ設けられていることに対応して連通領域34bが載置面31の中心部から環状領域34aに向けて米字形状に配設される。また、吸引口36が載置面31の中心部ではなく、連通領域34bの通路途中に設けられている。吸引口36は嵌入穴21と連通接続されている。そして、8つの大気開放領域33のそれぞれにはチャック周辺雰囲気と連通する連通穴35が設けられている。このような構成であっても、上記実施形態と同様効果を得ることができる。   While the embodiments of the present invention have been described above, the present invention is not limited to the above examples. For example, in the above embodiment, the mounting surface 31 is divided into four around the rotation axis X so as to provide four fan-shaped atmospheric open areas 33 having a central angle of 90 °. However, as shown in FIG. Eight fan-shaped atmospheric open areas 33 having a central angle of 45 ° may be provided by dividing into eight. In the example illustrated in FIG. 5, the communication area 34 b is disposed in a US shape from the center of the placement surface 31 toward the annular area 34 a in correspondence with the eight open air areas 33. . Further, the suction port 36 is provided not in the center of the placement surface 31 but in the middle of the passage of the communication region 34b. The suction port 36 is connected in communication with the insertion hole 21. Each of the eight air release regions 33 is provided with a communication hole 35 communicating with the chuck peripheral atmosphere. Even if it is such a structure, the effect similar to the said embodiment can be acquired.

また、載置面31を回転軸Xのまわりに6分割して中心角60°の扇形の大気開放領域33を6つ設けるようにしても良い。要するに、基板Wの吸着保持に直接には寄与しない大気開放領域33を載置面31上に形成するとともに、吸着保持に直接関与する減圧領域34として載置面31の周縁部に沿って環状に周設した環状領域34aおよび載置面31の中心部から環状領域34aに向けて連続して伸びる連通領域34bを設けるようにすれば、上記実施形態と同様効果を得ることができる。そして、大気開放領域33の形成態様に応じて連通領域34bを載置面31の中心部から環状領域34aに向けて放射状に配設することとなる。   Alternatively, the mounting surface 31 may be divided into six around the rotation axis X to provide six fan-shaped atmospheric open areas 33 having a central angle of 60 °. In short, the atmosphere release region 33 that does not directly contribute to the adsorption holding of the substrate W is formed on the mounting surface 31 and is annularly formed along the peripheral portion of the mounting surface 31 as the decompression region 34 that directly participates in the adsorption holding. If the annular region 34a provided around and the communication region 34b continuously extending from the center of the mounting surface 31 toward the annular region 34a are provided, the same effect as in the above embodiment can be obtained. And according to the formation aspect of the air release area | region 33, the communication area | region 34b will be arrange | positioned radially from the center part of the mounting surface 31 toward the cyclic | annular area | region 34a.

なお、接触面積増加の抑制および吸着保持時の基板Wの変形防止の双方の効果を両立するためには、大気開放領域33を載置面31の全体面積の半分以上形成することが好ましい。但し、吸着に寄与しない大気開放領域33の面積比率をあまりに大きくしすぎると必要な吸着保持力が得られなくなるため、大気開放領域33の面積は載置面31の全体面積の90%以下である事が好ましい。また、必要な吸着保持力を確保しつつも基板Wの変形を抑制するためには、減圧領域34の溝幅を0.5mm〜5.0mmとすることが好ましい。   In order to achieve both the effects of suppressing the increase in the contact area and preventing the deformation of the substrate W at the time of suction and holding, it is preferable to form the atmosphere release region 33 at least half of the entire area of the placement surface 31. However, if the area ratio of the atmospheric open area 33 that does not contribute to the adsorption is too large, the necessary adsorption holding force cannot be obtained, so the area of the atmospheric open area 33 is 90% or less of the entire area of the mounting surface 31. Things are preferable. In order to suppress the deformation of the substrate W while ensuring the necessary suction holding force, the groove width of the decompression region 34 is preferably set to 0.5 mm to 5.0 mm.

また、上記実施形態において吸引口36を図5の如く連通領域34bの通路途中に設けるようにしても良いし、図5の例において吸引口36を載置面31の中心に設けるようにしても良い。   In the above embodiment, the suction port 36 may be provided in the middle of the passage of the communication region 34b as shown in FIG. 5, or the suction port 36 may be provided at the center of the placement surface 31 in the example of FIG. good.

また、上記実施形態においては基板処理装置1をレジスト塗布処理を行うものとしていたが、本発明に係る吸着チャックは基板を真空吸着保持して回転させる装置、例えば洗浄処理装置や現像処理装置に適用するにしても良い。   In the above-described embodiment, the substrate processing apparatus 1 performs the resist coating process. However, the suction chuck according to the present invention is applied to a device that vacuum-holds and rotates the substrate, for example, a cleaning processing device or a development processing device. You may do it.

さらに、本発明に係る吸着チャックによって保持対象となる基板Wは半導体ウェハに限定されるものではなく、液晶表示装置用ガラス基板であっても良い。   Furthermore, the substrate W to be held by the suction chuck according to the present invention is not limited to a semiconductor wafer, and may be a glass substrate for a liquid crystal display device.

本発明に係る吸着チャックが組み込まれた基板処理装置の一例を示す要部断面図である。It is principal part sectional drawing which shows an example of the substrate processing apparatus with which the suction chuck concerning this invention was incorporated. 吸着チャックの外観斜視図である。It is an external appearance perspective view of a suction chuck. 吸着チャックを上面から見た平面図である。It is the top view which looked at the adsorption chuck from the upper surface. 吸着チャックを図3のV−V線に沿って見た側断面図である。It is the sectional side view which looked at the adsorption chuck along the VV line of FIG. 吸着チャックの他の例を示す平面図である。It is a top view which shows the other example of a suction chuck. 低接触面積タイプの吸着チャックにて基板を吸着保持したときの状態を模式的に示す図である。It is a figure which shows typically a state when a board | substrate is adsorbed and hold | maintained with the low contact area type adsorption chuck.

符号の説明Explanation of symbols

1 基板処理装置
2 回転軸
5 カップ
9 レジスト吐出ノズル
10 吸着チャック
20 接続軸
30 基板載置部
31 載置面
32 支持面
33 大気開放領域
34 減圧領域
34a 環状領域
34b 連通領域
35 連通穴
36 吸引口
W 基板
DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Rotating shaft 5 Cup 9 Resist discharge nozzle 10 Adsorption chuck 20 Connection shaft 30 Substrate placement part 31 Placement surface 32 Support surface 33 Atmospheric release region 34 Decompression region 34a Annular region 34b Communication region 35 Communication hole 36 Suction port W substrate

Claims (4)

載置した基板の下面を真空吸引することによって該基板を吸着保持する吸着チャックであって、
基板を載置するための載置面と、
前記載置面に凸状に設けられ、前記載置面上に載置した基板の下面に当接して該基板を支持する支持部と、
を備え、
前記載置面は、前記支持部によって減圧領域と大気開放領域とに仕切られ、
前記減圧領域および前記大気開放領域は、前記支持部によって囲まれた閉じた領域であり、
前記減圧領域には、外部の真空吸引手段と連通する吸引口が穿設され、
前記大気開放領域には、チャック周辺の雰囲気と連通する連通穴が穿設され、
前記減圧領域は、前記載置面の周縁部に沿って環状に周設された環状領域および前記載置面の中心部から前記環状領域に向けて連続して設けられた連通領域を有することを特徴とする吸着チャック。
A suction chuck that sucks and holds the substrate by vacuum suction of the lower surface of the placed substrate,
A mounting surface for mounting the substrate;
A support portion that is provided in a convex shape on the mounting surface and supports the substrate by contacting the lower surface of the substrate placed on the mounting surface;
With
The mounting surface is partitioned into a decompression region and an air release region by the support part,
The decompression region and the atmosphere release region are closed regions surrounded by the support part,
In the reduced pressure area, a suction port communicating with an external vacuum suction means is formed,
In the air release region, a communication hole communicating with the atmosphere around the chuck is formed,
The decompression region has an annular region that is annularly provided along a peripheral portion of the placement surface and a communication region that is continuously provided from the center of the placement surface toward the annular region. Features a suction chuck.
請求項1記載の吸着チャックにおいて、
前記連通領域は前記載置面の中心部から前記環状領域に向けて直線状に配設されることを特徴とする吸着チャック。
The suction chuck according to claim 1,
The suction chuck according to claim 1, wherein the communication region is linearly arranged from the center of the mounting surface toward the annular region.
請求項1または請求項2記載の吸着チャックにおいて、
前記連通領域は前記載置面の中心部から前記環状領域に向けて放射状に配設されることを特徴とする吸着チャック。
The suction chuck according to claim 1 or 2,
The suction chuck according to claim 1, wherein the communication area is arranged radially from the center of the mounting surface toward the annular area.
請求項1から請求項3のいずれかに記載の吸着チャックにおいて、
前記吸引口は、前記載置面の中心部に穿設されることを特徴とする吸着チャック。
The suction chuck according to any one of claims 1 to 3,
The suction chuck according to claim 1, wherein the suction port is formed in a central portion of the mounting surface.
JP2005134305A 2005-05-02 2005-05-02 Vacuum chuck Pending JP2006310697A (en)

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