KR101326025B1 - Apparatus for transferring a wafer - Google Patents

Apparatus for transferring a wafer Download PDF

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Publication number
KR101326025B1
KR101326025B1 KR1020120050305A KR20120050305A KR101326025B1 KR 101326025 B1 KR101326025 B1 KR 101326025B1 KR 1020120050305 A KR1020120050305 A KR 1020120050305A KR 20120050305 A KR20120050305 A KR 20120050305A KR 101326025 B1 KR101326025 B1 KR 101326025B1
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KR
South Korea
Prior art keywords
vacuum
support unit
wafer
wafer support
suction
Prior art date
Application number
KR1020120050305A
Other languages
Korean (ko)
Inventor
정동준
채승수
이상민
Original Assignee
쿠어스텍아시아 유한회사
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Priority to KR1020120050305A priority Critical patent/KR101326025B1/en
Application granted granted Critical
Publication of KR101326025B1 publication Critical patent/KR101326025B1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00—Gripping heads and other end effectors
    • B25J15/06—Gripping heads and other end effectors with vacuum or magnetic holding means
    • B25J15/0616—Gripping heads and other end effectors with vacuum or magnetic holding means with vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00—Gripping heads and other end effectors
    • B25J15/06—Gripping heads and other end effectors with vacuum or magnetic holding means
    • B25J15/0616—Gripping heads and other end effectors with vacuum or magnetic holding means with vacuum
    • B25J15/0683—Details of suction cup structure, e.g. grooves or ridges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

Abstract

The present invention relates to a wafer supporting unit fixing a wafer in a semiconductor manufacturing process. The present invention includes at least two vacuum regions on which a plurality of vacuum holes are formed on the top surface at a predetermined depth; at least two independent flow passages which are connected to the vacuum holes formed on one of the vacuum regions and which forms independent flow passages which are not connected to each other; and the underside on which a suction hole which is connected to the vacuum flow passages respectively and which supplies vacuum pressure supplied by a vacuum providing unit to the vacuum flow passages.

Description

Wafer transfer device {APPARATUS FOR TRANSFERRING A WAFER}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer transfer apparatus for transferring wafers in a semiconductor manufacturing process, and more particularly, to a wafer transfer apparatus including a wafer support unit for fixing a wafer using vacuum pressure.

Semiconductors are manufactured by processing silicon substrates called wafers. Wafers are processed into semiconductors by sequentially going through the various steps set in the semiconductor production cost. The wafer transfer device supports the wafer and moves the wafer along each process.

1 is a plan view of one embodiment of a wafer support unit of a wafer transfer device according to the prior art, and FIG. 2 is a vertical cross-sectional view of the wafer support unit of FIG. 1. 1 and 2, a wafer support unit according to the prior art includes a frame 10 and a suction plate 20.

The frame 10 has a circular plate shape, and a suction hole 7 for supplying a vacuum pressure is formed on a lower surface of the frame 10, and a plurality of vacuums communicating with the suction hole 7 on the upper surface of the frame 10. A flow path 8 and a pipe-shaped side wall 14 of a predetermined height are provided.

The vacuum passage 8 is disposed radially about the suction hole 7 so as to communicate with the suction hole 7. The vacuum passage 8 evenly distributes the vacuum pressure applied through the suction hole 7 over the entire area of the suction plate 20.

The suction plate 20 has a circular plate shape and is inserted into and fixed to a space inside the side wall 14 of the frame 10. The suction plate 20 is a sintered high-density ceramic (ceramic), such as silicon carbide (SiC), silicon nitride (Si 3 N 4 ) at a high temperature, a number of pores are formed on the surface and inside.

In the wafer support unit having the above configuration, a vacuum pressure supply member is connected to the lower side of the suction hole 7, and the vacuum pressure generated in the vacuum pressure supply member is widened at the lower portion of the suction plate 20 by the vacuum flow path 8. The vacuum pressure dispersed by the vacuum flow path 8 is transmitted to the pores of the suction plate 20 so that the vacuum pressure is applied to the entire surface of the suction plate 20. The semiconductor wafer 16 is sucked and fixed to the surface side of the suction plate 20 by the vacuum pressure acting on the surface of the suction plate 20.

However, in the conventional wafer support unit, some problems are caused because the suction plate 20 is made of ceramic.

First, the positional accuracy of the wafer support unit is inferior because the weight of the suction plate 20 is heavy. In addition to supporting the wafer in a stationary state, the wafer support unit must move the wafer for the next process at the end of either process. The wafer support unit undergoes acceleration and deceleration in the process of moving the wafer. When the wafer support unit is heavy, the inertial force is large. Therefore, a large amount of power is required to accelerate and decelerate the wafer support unit. it's difficult. Therefore, in order to increase the positional accuracy of the wafer support unit, the lighter the weight of the wafer support unit is, the better. Therefore, reducing the weight of the wafer support unit as much as the wafer support unit firmly holds the wafer is also an important design challenge of the wafer support unit.

In addition, since the suction plate 20 is made of ceramic, when the wafer is repeatedly seated and detached from the wafer support unit, dust separated from the surface of the suction plate 20 is generated, and dust generated from the suction plate 20 is generated. This causes defects in the wafer. When the suction plate 20 is made of ceramic, the generation of dust is an inevitable result.

In addition, since the size and arrangement of the pores formed in the suction plate 20 is irregular, it cannot provide a uniform suction force over the entire area of the suction plate 20.

In addition, since the vacuum pressure leaks between the suction plate 20 and the frame 10, it is difficult to adjust the magnitude of the vacuum pressure for fixing the wafer.

Moreover, since the ceramic used as the material of the suction plate 20 is expensive, the manufacturing cost of a wafer support unit is high.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and an object thereof is to provide a wafer transport apparatus including a wafer support unit capable of reducing the total weight of the wafer support unit as compared with the prior art.

Another object of the present invention is to provide a wafer transfer apparatus in which dust does not occur even when the wafer support unit is used for a long time.

It is also an object of the present invention to provide a wafer transfer apparatus capable of forming a uniform vacuum pressure over the entire surface of the wafer support unit.

It is also an object of the present invention to provide a wafer transfer apparatus that can easily adjust the magnitude of the vacuum pressure formed on the surface of the wafer support unit.

In addition, an object of the present invention is to provide a wafer transfer apparatus capable of lowering the manufacturing cost of a wafer support unit as compared with the prior art.

In order to solve the above problems, the present invention, the at least two vacuum area is partitioned, the vacuum area in the plurality of vacuum holes are respectively formed to a predetermined depth; At least two vacuum passages communicating with the vacuum holes formed in any one of the vacuum regions and forming independent passages not communicating with each other; And a body including a lower surface communicating with each of the vacuum flow paths and having a suction hole for supplying a vacuum pressure provided by a vacuum providing unit to the vacuum flow paths, wherein the body is made of aluminum. A wafer support unit; And a transfer unit configured to transfer the wafer support unit.

The wafer support unit may further include a plurality of suction pipes, one end of which is in communication with the vacuum providing part and the other end of which is in communication with any one of the suction holes. In addition, the wafer support unit may further include a distributor for distributing the vacuum pressure generated by the vacuum providing unit to supply the suction pipe.

The body includes an upper body and a lower body, the vacuum holes are formed in the upper body, the suction holes are formed in the lower body, a flow path groove is formed on the lower surface of the upper body, The vacuum body may be formed by coupling the lower body to a lower surface.

The vacuum holes are formed in a predetermined pattern, the pattern includes: a radial portion extending radially straight from the center of the body; And it may include a plurality of circumferential portion of the concentric arc shape centering on the center of the body and having a different diameter.

Preferably, the upper surface of the body is anodized surface treatment.

The transfer unit, a drive member for generating a driving force; And a transfer arm supporting the body of the wafer support unit and driven by the driving member to transfer the wafer support unit.

In addition, according to one embodiment of the present invention, there is an effect that the total weight of the wafer support unit is reduced compared to the prior art.

In addition, according to one embodiment of the present invention, since the wafer support unit is made of aluminum instead of porous ceramic, there is an effect that dust does not occur even in repeated use.

In addition, according to one embodiment of the present invention, there is an effect that the vacuum pressure is uniformly formed over the entire surface of the wafer support unit.

In addition, according to one embodiment of the present invention, since the vacuum pressure does not leak through other portions than the surface of the wafer support unit, there is an effect of easily adjusting the magnitude of the vacuum pressure formed on the upper surface of the wafer support unit.

In addition, according to one embodiment of the present invention, the manufacturing cost of the wafer support unit is reduced by being made of aluminum instead of a relatively expensive ceramic.

1 is a plan view of one embodiment of a wafer support unit of a wafer transfer apparatus according to the prior art.
FIG. 2 is a vertical sectional view of the wafer support unit of FIG. 1.
3 is an exploded perspective view of a body of a wafer support unit according to an embodiment of the present invention viewed from the bottom.
4 is a plan view of the upper body of the wafer support unit according to one embodiment of the invention.
5 is a bottom view of the upper body of the wafer support unit according to one embodiment of the invention.
6 is a bottom view of the lower body of the wafer support unit according to one embodiment of the invention.
7 is a perspective view of an embodiment of a transfer unit of the wafer transfer apparatus according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to designate the same or similar components throughout the drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

3 is an exploded perspective view of a body of a wafer support unit according to an embodiment of the present invention viewed from the bottom. 4 is a plan view illustrating a top surface of an upper body of a wafer support unit according to an embodiment of the present invention, and FIG. 5 is a bottom view illustrating a bottom surface of an upper body of a wafer support unit according to an embodiment of the present invention. . 6 is a bottom view of a lower body of a wafer support unit according to an embodiment of the present invention, and FIG. 7 is a perspective view of an embodiment of a transfer unit of the wafer transfer device according to an embodiment of the present invention. In the following description, the side where the wafer is located will be referred to as 'upper' and the opposite side will be described as 'lower'.

According to an embodiment of the present invention includes a wafer support unit for supporting a wafer and a transfer unit 500 for transferring a wafer support unit. The wafer support unit is configured to support and fix the wafer using suction force by vacuum pressure, and the transfer unit 500 is configured to transfer the wafer support unit, so that the wafer is formed by a wafer transfer device according to an embodiment of the present invention. It is moved from one process to another.

First, referring to the configuration of the wafer support unit, the wafer support unit includes a body 100, a suction pipe 420, and a distributor 410. The wafer support unit according to the embodiment of the present invention supplies the vacuum pressure generated by the vacuum providing unit 400 to the body 100 through the distributor 410 and the suction pipe 420, and finally the vacuum pressure is It is configured to be formed in the vacuum hole 230 formed on the upper surface of the body (100). Meanwhile, the term 'vacuum' described in the present invention includes not only a complete vacuum state but also a pressure state enough to act on the vacuum hole 230 at a pressure lower than atmospheric pressure to fix the wafer to the upper surface of the wafer support unit. Concept.

The body 100 has at least two vacuum regions 220 defined therein, and a plurality of vacuum holes 230 are formed in the vacuum regions 220 to a predetermined depth, respectively, and the upper surface is formed flat so that the wafer can be placed. And at least two vacuum flow paths 240 and the vacuum flow paths 240 that communicate with the vacuum holes 230 formed in any one of the vacuum regions 220 and form independent flow paths that do not communicate with each other. The lower surface of the suction hole 250 is formed to communicate with the vacuum passage 240 to supply the vacuum pressure provided by the vacuum providing unit 400.

In one embodiment, the body 100 includes an upper body 110 and a lower body 120. The lower body 120 may be coupled to a lower surface of the upper body 110 by a coupling member such as a bolt 300. In this case, a bolt coupling hole 260 may be formed in the lower body 120. A wafer is supported on the upper surface of the body 100, and a transfer arm for moving the wafer support unit inside the semiconductor production facility is located on the lower surface of the lower body 120.

The plurality of vacuum regions 220 are partitioned and formed in a predetermined shape on the upper surface of the body 100. The plurality of vacuum regions 220 do not overlap each other, and a plurality of vacuum holes 230 are formed inside the respective vacuum regions 220. The vacuum holes 230 are provided to provide a vacuum in the space between the lower surface of the wafer and the upper surface of the body 100 seated on the upper surface of the body 100. The vacuum holes 230 are formed to a predetermined depth from the upper surface of the upper body 110. The diameters of the vacuum holes 230 formed in the upper body 110 are all the same, or, if necessary, the vacuum holes 230 having different diameters may be mixed. The vacuum holes 230 formed in the different vacuum regions 220 form a vacuum pressure independently of each other. That is, the vacuum holes 230 included in one vacuum region form a vacuum pressure without being affected by the vacuum holes 230 included in the other vacuum region, and, if necessary, the vacuum pressure for each vacuum region. Whether or not provided, and the magnitude of the vacuum pressure may be provided. Of course, it is generally preferred that all vacuum regions be provided with the same vacuum pressure. The principle of forming a vacuum pressure in the vacuum hole 230 formed in the vacuum region 220 will be described later.

The vacuum holes 230 may be uniformly formed over the entire area of the vacuum region 220 or may be formed to form a predetermined pattern. When the vacuum holes 230 are formed to form a predetermined pattern, as shown in FIG. 4, the vacuum holes 230 may have a radius portion 234 and a body extending radially straight from the center of the body 100. It may be made of a combination of a plurality of circumferential portion 232 of the plurality of concentric circular arc shape having a center and the diameter of the center 100. The vacuum hole 230 may be formed in a pattern of various shapes in addition to the illustrated embodiment.

The vacuum flow path 240 is formed between the upper surface and the lower surface of the body 100, the suction hole 250 provided on the lower surface of the body 100 and the plurality of vacuum holes 230 provided on the upper surface of the body 100. Configured to communicate. The vacuum passage 240 serves to diffuse the vacuum pressure applied to the suction hole 250. As an embodiment for forming the vacuum flow path 240, as shown in the present embodiment, the body 100 is composed of the upper body 110 and the lower body 120 is coupled, the upper body 110 May form a channel groove 242 for forming the vacuum channel 240. When the flow path groove 242 is formed on the bottom surface of the upper body 110, when the lower body 120 having the suction hole 250 is coupled to the bottom surface of the upper body 110, the flow path groove 242 is connected to the bottom body ( A vacuum flow path 240 that is sealed by the 120 and communicates the plurality of vacuum holes 230 and the suction holes 250 is formed.

The wafer support unit according to the embodiment of the present invention may be provided with a plurality of vacuum flow paths 240 having independent flow paths to form an even vacuum pressure over the entire area of the upper surface of the body 100.

The vacuum flow path 240 is formed to include at least the area in which the vacuum hole 230 is formed. Preferably, the vacuum passage 240 is preferably formed in a shape corresponding to the pattern shape of the vacuum hole 230. That is, as shown in FIG. 4, when the vacuum hole 230 formed in any one of the vacuum regions 220 is formed of a combination of a radius portion and a circumference portion, the vacuum flow path 240 also has the same pattern shape. It is preferable.

The vacuum flow path 240 is formed only in a part of the entire area of the body 100, and the portion 245 in which the vacuum flow path 240 is not formed in the body 100 forms a pillar. The pillar portion 245 in which the vacuum flow path 240 is not formed functions as a reinforcing rib to prevent the body 100 from bending. Since the flatness of the wafer greatly affects the precision of the semiconductor circuit, the top surface of the body 100 on which the wafer is seated also requires a high degree of flatness. Therefore, when the flow path groove 242 for forming the vacuum flow path 240 is formed in the upper body 110, since the reinforcing rib is inevitably formed in the upper body 110, the vacuum flow path 240 is formed in the lower body 120. It is more advantageous to improve the flatness of the upper surface of the body 100 is formed on the upper body 110 rather than).

If necessary, as in the present embodiment, a flow path groove 242 for forming the vacuum hole 230 and the vacuum flow path 240 is formed in the upper body 110 and the suction hole 250 in the lower body 120. In this case, only the vacuum hole 230 is formed in the upper body 110 and the flow path groove 242 and the suction hole 250 for forming the vacuum flow path 240 are formed in the lower body 120. It may be. Of course, in this case, the upper body 110 is not provided with a structure that functions as a reinforcing rib, but increasing the thickness of the upper body 110 may increase the bending strength of the upper body 110, but accordingly There is a disadvantage that the weight of 100 is increased.

The vacuum applied to the suction hole 250 is provided by a vacuum providing unit 400 such as a vacuum pump. When the vacuum providing unit 400 operates to apply the vacuum pressure to the suction hole 250, the air inside the vacuum hole 230 is discharged to the outside of the body 100 through the vacuum flow path 240.

The dispenser 410 serves to dispense provided by the vacuum provider 400. The distributor 410 is provided with an input port and a plurality of output ports. An input port of the distributor 410 communicates with the vacuum providing unit 400, and a suction pipe 420 is connected to each output port of the distributor 410. The other end of the suction pipe 420, one end of which is connected to the output port of the distributor 410, communicates with the suction hole 250. When the vacuum pressure is generated by the vacuum providing unit 400, the vacuum pressure is distributed by the distributor 410 and then applied to each suction hole 250 through each suction pipe 420. The vacuum pressure applied to each suction hole 250 moves along the vacuum flow path 240 and is provided to the plurality of vacuum holes 230 communicating with the vacuum flow path 240. Accordingly, the vacuum pressure is applied to the vacuum holes 230 located in the vacuum region 220. As such, by adjusting the magnitude of the vacuum pressure supplied to each suction hole 250, the vacuum pressure may be formed to be the same for each vacuum region 220 or may have a different size.

The body 100 of the wafer support unit according to one embodiment of the invention is made of aluminum. It is preferable that both the upper body 110 and the lower body 120 are made of aluminum, or at least the upper body 110 is made of aluminum. The body 100 can be made of lightweight aluminum to reduce the total weight of the wafer support unit. Accordingly, the wafer support unit according to the present invention can accelerate and decelerate the wafer support unit during the movement of the wafer support unit, compared to the conventional wafer support unit using the porous ceramic due to the heavy weight. The moving speed of the support unit is increased and the positional accuracy of the wafer support unit is improved. In addition, since the wafer support unit is made of inexpensive aluminum instead of expensive ceramic, the manufacturing cost of the wafer support unit can be lowered.

In addition, when the body 100 is made of aluminum, even when repeated use of the wafer support unit does not generate fine particles such as dust, defects in the semiconductor are prevented. This is a great advantage compared to the prior art that provides a vacuum pressure using a porous ceramic.

In addition, since the vacuum hole 230 can be formed in a desired pattern by the designer and can be regularly formed on the upper surface of the body 100, a uniform vacuum pressure can be provided on the upper surface of the body 100 as compared with the conventional art. . In addition, since the vacuum pressure provided by the vacuum providing unit 400 does not leak through portions other than the vacuum hole 230, it is possible to easily adjust the magnitude of the vacuum pressure provided on the upper surface of the body 100.

Meanwhile, the body 100, in particular the body 100 of the wafer support unit according to an embodiment of the present invention, in order to enhance surface strength, enhance durability, and prevent generation of fine particles that may act as impurities in a semiconductor manufacturing process. The upper surface of is preferably anodizing (Anodizing) surface treatment.

Next, referring to the configuration of the transfer unit 500, the transfer unit 500 moves the wafer support unit inside the semiconductor production facility. The transfer part 500 may move the wafer support unit in various ways. For example, the transfer unit 500 may be implemented in the form of a articulated robot arm. The transfer part 500 may include a drive member 530 that generates a driving force, and a transfer arm 510 that supports the body 100 of the wafer support unit and is driven by the drive member 530 to transfer the wafer support unit. have. In order to couple the body 100 of the wafer support unit to the transfer arm 510, a transfer arm coupling hole 270 is formed in the lower surface of the body 100, and the transfer arm 510 is formed in the body 100. A fixing protrusion 520 inserted into the arm coupling hole 270 may be formed. As the wafer support unit is moved along the inside of the semiconductor production facility by the transfer unit 500, the wafer is moved between the processes provided in the semiconductor production facility.

It will be apparent to those skilled in the art that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. . Therefore, the embodiments disclosed in the present invention are not intended to limit the scope of the present invention but to limit the scope of the technical idea of the present invention. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

100: body 110: upper body
120: lower body 220: vacuum area
230: vacuum hole 240: vacuum flow path
250: suction hole 400: vacuum providing unit
410: dispenser 420: suction line
500: transfer unit 510: transfer arm
530: drive member

Claims (7)

At least two vacuum regions are defined, each vacuum region having a plurality of vacuum holes formed to a predetermined depth; At least two vacuum passages communicating with the vacuum holes formed in any one of the vacuum regions and forming independent passages not communicating with each other; And a body including a lower surface communicating with each of the vacuum flow paths and having a suction hole for supplying a vacuum pressure provided by a vacuum providing unit to the vacuum flow paths, wherein the body is made of aluminum. A wafer support unit; And
It includes a transfer unit for transferring the wafer support unit
Wafer transfer device. The method of claim 1,
The wafer support unit,
One end is in communication with the vacuum providing portion, the other end further comprises a plurality of suction pipes in communication with any one of the suction holes
Wafer transfer device. 3. The method of claim 2,
The wafer support unit,
And a distributor configured to distribute the vacuum pressure generated by the vacuum providing unit and supply the vacuum pressure to the suction pipe.
Wafer transfer device. The method of claim 1,
The body includes an upper body and a lower body,
The vacuum holes are formed in the upper body,
The suction holes are formed in the lower body,
A flow path groove is formed on a lower surface of the upper body, and the vacuum body is formed by coupling the lower body to a lower surface of the upper body.
Wafer transfer device. The method of claim 1,
The vacuum holes are formed in a predetermined pattern,
The pattern may be,
A radial portion extending radially straight from the center of the body; And
It characterized by including a plurality of circumferential portion of the concentric arc-shaped centered on the center of the body and having a different diameter
Wafer transfer device. The method of claim 1,
The upper surface of the body is characterized in that the anodizing surface treatment
Wafer transfer device. The method of claim 1,
The transfer unit
A driving member for generating a driving force; And
And a transfer arm supporting the body of the wafer support unit and driven by the drive member to transfer the wafer support unit.
Wafer transfer device.
KR1020120050305A 2012-05-11 2012-05-11 Apparatus for transferring a wafer KR101326025B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI565569B (en) * 2016-02-05 2017-01-11 南京瀚宇彩欣科技有限責任公司 Absorbing apparatus, absorbing system and application thereof
JP2017113868A (en) * 2015-12-25 2017-06-29 リコーエレメックス株式会社 Component holding nozzle

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970063657A (en) * 1996-02-29 1997-09-12 김광호 A vacuum chuck for transferring semiconductor wafers
JP2006310697A (en) * 2005-05-02 2006-11-09 Dainippon Screen Mfg Co Ltd Vacuum chuck
KR100835977B1 (en) * 2007-02-28 2008-06-09 주식회사 고려반도체시스템 A chuck table for wafer sawing device
KR20090065843A (en) * 2007-12-18 2009-06-23 세크론 주식회사 Unit for fixing a board and apparatus for bonding dies including the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970063657A (en) * 1996-02-29 1997-09-12 김광호 A vacuum chuck for transferring semiconductor wafers
JP2006310697A (en) * 2005-05-02 2006-11-09 Dainippon Screen Mfg Co Ltd Vacuum chuck
KR100835977B1 (en) * 2007-02-28 2008-06-09 주식회사 고려반도체시스템 A chuck table for wafer sawing device
KR20090065843A (en) * 2007-12-18 2009-06-23 세크론 주식회사 Unit for fixing a board and apparatus for bonding dies including the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017113868A (en) * 2015-12-25 2017-06-29 リコーエレメックス株式会社 Component holding nozzle
TWI565569B (en) * 2016-02-05 2017-01-11 南京瀚宇彩欣科技有限責任公司 Absorbing apparatus, absorbing system and application thereof

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