CN102412176B - Pallet and wafer processing equipment possessing the same - Google Patents
Pallet and wafer processing equipment possessing the same Download PDFInfo
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- CN102412176B CN102412176B CN201010291676.2A CN201010291676A CN102412176B CN 102412176 B CN102412176 B CN 102412176B CN 201010291676 A CN201010291676 A CN 201010291676A CN 102412176 B CN102412176 B CN 102412176B
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Abstract
The invention discloses a pallet. The pallet comprises: a pallet body; at least one groove, which is formed on an upper surface of the pallet body so as to accommodate a wafer; a peripheral closed portion, which is formed on a periphery of a lower surface of the pallet body; a plurality of lug bosses, which is located on the lower surface of the pallet body and is located in the peripheral closed portion; channels, which are formed between the lug bosses. The channels are mutually connected. The invention further discloses a wafer processing equipment possessing the pallet. According to the pallet in embodiments of the invention, through setting a plurality of the lug bosses and the channels on the lower surface, a thermal conduction medium can flow smoothly between the pallet and a chuck and a temperature of the pallet is uniform. Through reducing the temperature of the pallet, the temperature of the wafer located on the pallet can be reduced.
Description
Technical field
The present invention relates to plasma process field, particularly a kind of improved pallet and there is its wafer processing apparatus.
Background technology
Plasma process technology, refers under certain condition and will pass into the gas ionization of reative cell, produces the plasma that comprises positive and negative charged particle and free atom group.Wherein, plasma and substrate generation physics and chemical reaction are to obtain needed semiconductor structure.
In LED process for making, particularly, in etching technics, in order to fix, to support and transmit wafer and realizing temperature and control, avoid in technical process, occurring mobile or inconsistent phenomenon, often need to use pallet.This class pallet apparatus has been widely used in semiconductor plasma etching reaction chamber.
Particularly, at the upper surface of pallet, be evenly provided with a plurality of grooves, for placing the wafer that need to carry out plasma treatment (as etching processing etc.).After plasma treatment, the temperature of wafer raises, and by helium is blowed to the lower surface of pallet from gas passage, can reach the object of effective cooling pallet.Pallet is again by the uniformity of the cooling wafer of heat exchange and assurance chip temperature.
But the lower surface of existing pallet is generally a plane, thereby, between pallet and the chuck below it, will there is tiny vacuum gap.Under vacuum environment, coolant circulates not smooth as helium in above-mentioned vacuum gap, thereby make the heat transfer property variation between pallet and chuck, cause excess Temperature and the uniformity of pallet poor, thereby cause excess Temperature and the poor temperature uniformity of wafer, and affect final wafer engraving effect.
Summary of the invention
The present invention is intended at least solve one of technical problem existing in prior art.For existing pallet, need to provide a kind of improved support holder structure especially, thereby promote that coolant can flow equably at pallet lower surface, thereby improve the uniformity of pallet temperature, enhanced etching effect.In addition, the present invention also needs to provide a kind of wafer processing apparatus with described pallet.
According to an aspect of the present invention, provide a kind of pallet, having comprised: tray body; At least one groove, described groove is formed on the upper surface of described tray body to hold wafer; Neighboring closure, described neighboring closure is formed on the periphery of the lower surface of described tray body; A plurality of lug bosses, described a plurality of boss are in the lower surface of described tray body and within being positioned at described neighboring closure; And being formed on the raceway groove between described a plurality of lug boss, described raceway groove communicates with each other.
According to the pallet of the embodiment of the present invention, by the lower surface at pallet, a plurality of lug bosses are set, and be formed on the raceway groove between above-mentioned a plurality of lug boss, can realize heat-conduction medium flows unobstructed between pallet and chuck, make the temperature of pallet more even, thereby by reducing equably the temperature of pallet, can reduce equably the temperature that is positioned at the wafer on pallet by conduction of heat, to obtain good wafer engraving effect.
According to one embodiment of present invention, described lug boss is arranged in concentric ring, and it is the center of circle that described concentric ring be take described pallet center.
According to one embodiment of present invention, described lug boss forms cylinder shape or arc.
According to one embodiment of present invention, described neighboring closure and described lug boss have identical height.
According to one embodiment of present invention, the area of described raceway groove be described pallet lower surface area 20～80%.
According to a further aspect of the invention, provide a kind of wafer processing apparatus, having comprised: reative cell; Pedestal, described pedestal is contained in described reative cell; Chuck, described chuck is arranged on described pedestal; Pallet as above, described pallet is arranged on described chuck removedly; And gas feed path, for providing gas tangentially to the lower surface place of described pallet.
The wafer processing apparatus of the embodiment of the present invention is by adopting pallet as above, promote heat-conduction medium flowing between pallet and chuck, effectively control the temperature of pallet, thereby the problem that has solved the excess Temperature and the lack of homogeneity that are positioned at the wafer on pallet, has improved the etching effect to wafer.
According to one embodiment of present invention, described reative cell is for carrying out plasma treatment to wafer.
According to one embodiment of present invention, the upper surface of described chuck is formed with a plurality of perforates, is supplied to the lower surface of described pallet for the gas that gas feed path is supplied with.
According to one embodiment of present invention, described gas feed path comprises: main channel part, and described main channel part is formed in described pedestal and chuck; And branched bottom part, described branched bottom part is communicated with described main channel part and described a plurality of perforate fluid respectively.
According to one embodiment of present invention, described wafer processing apparatus further comprises: gas source, described gas source is communicated with described gas feed path fluid.
According to one embodiment of present invention, described gas source is for being supplied to described gas feed path by heat-conduction medium.
According to one embodiment of present invention, described wafer processing apparatus further comprises: securing member, and described securing member is for being fixed on chuck by pallet, and with by described pallet and described chuck close contact, described securing member comprises: pressure ring; And compression ring elevating mechanism, described compression ring elevating mechanism is arranged on the below of described pressure ring for pressure ring described in lifting.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage accompanying drawing below combination obviously and is easily understood becoming the description of embodiment, wherein:
Fig. 1 is the structural representation of wafer processing apparatus according to an embodiment of the invention;
Fig. 2 is the main pseudosection of pallet according to an embodiment of the invention;
Fig. 3 is the vertical view of pallet in Fig. 2;
Fig. 4 is the upward view of pallet according to an embodiment of the invention;
Fig. 5 is the upward view of pallet in accordance with another embodiment of the present invention; And
Fig. 6 is the fabrication processing figure of pallet according to an embodiment of the invention.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Below by the embodiment being described with reference to the drawings, be exemplary, only for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, term " longitudinally ", " laterally ", " on ", orientation or the position relationship of the indication such as D score, 'fornt', 'back', " left side ", " right side ", " vertically ", " level ", " top ", " end " be based on orientation shown in the drawings or position relationship, be only the present invention for convenience of description rather than require the present invention with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.
For a better understanding of the present invention, first the wafer processing apparatus 100 according to the embodiment of the present invention is described with reference to the drawings, wherein Fig. 1 is the structural representation of wafer processing apparatus 100 according to an embodiment of the invention; Fig. 2-5 are the structural representation of pallet 4 according to an embodiment of the invention.
As Figure 1-5, according to the wafer processing apparatus 100 of the embodiment of the present invention, comprise reative cell 1, pedestal 2, chuck 3, pallet 4 and gas feed path 6.
As shown in fig. 1, pedestal 2 is contained in reative cell 1 inside, and wherein the upper surface at pedestal 2 is provided with chuck 3.Reative cell 1 can be for carrying out PROCESS FOR TREATMENT, such as plasma treatment etc. to wafer 6.Described wafer processing apparatus 100 also comprises pallet 4, and wherein, pallet 4 is arranged on chuck 3 removedly, and pending wafer 6 can further be placed on pallet 4, and wafer 6 can be fixed, supports and be transmitted to described pallet 4.By the fixation of pallet 4, thereby having avoided in technical process, there is phenomenon mobile or dislocation in wafer.
According to one embodiment of present invention, pallet 4 can be placed on chuck 3 by machinery or electrostatic attraction mode etc.
When 1 pair of wafer of reative cell 6 carries out plasma treatment, the pallet 4 that is placed with wafer 6 enters reative cell 1, and wafer 6 is transferred into reative cell 1 by pallet 4 and carries out PROCESS FOR TREATMENT.When carrying out PROCESS FOR TREATMENT, excess Temperature and poor temperature uniformity for fear of wafer 6, affect final process results, need between the lower surface of pallet 4 and chuck 3, pass into the heat-conduction medium of helium for example or argon gas.As shown in fig. 1, in the inside of pedestal 2 and chuck 3, form the gas feed path 5 that connects above-mentioned both inside, heat-conduction medium is supplied to the lower surface place of pallet 4 by gas feed path 5.
According to one embodiment of present invention, described gas feed path 5 can comprise main channel part and branched bottom part.Described main channel part can be formed in pedestal 2 and chuck 3, and described branched bottom part is communicated with above-mentioned main channel segment fluid flow.And, at the upper surface of chuck 3, being formed with a plurality of perforates, above-mentioned a plurality of perforates are further communicated with branched bottom segment fluid flow.Due to when the technique, the upper surface of chuck 3 is placed with pallet 4, therefore by gas feed path heat-conduction medium, is supplied to the lower surface of pallet 4.Described wafer processing apparatus 100 may further include gas source, and described gas source is supplied to gas feed path 5 by heat-conduction medium, and is partly communicated to described a plurality of perforate by branched bottom.This gas source can be supplied with heat-conduction medium to described gas feed path 5 in predetermined patterns, and described preassigned pattern can preset according to the cooling needs of wafer.
According to one embodiment of present invention, described heat-conduction medium can be helium.Certainly, it will be appreciated by persons skilled in the art that heat-conduction medium is not limited to helium, there are other gases of refrigerating function, all can be for heat-conduction medium of the present invention such as argon gas etc., within it also falls into protection scope of the present invention.
Due in technical process, heat-conduction medium is by gas feed path and be formed on the lower surface that a plurality of perforates on chuck 3 upper surfaces are supplied to pallet 4, in order to prevent heat-conduction medium, the gas of pallet 4 is answered back to, therefore, the wafer processing apparatus of one embodiment of the present of invention can further include securing member, for pallet 4 is fixed on to chuck 3, with by described pallet 4 and described chuck 3 close contacts.This securing member can be fixed on pallet 4 on chuck 3 when wafer is carried out to plasma etching process, avoids departing from chuck 3 due to the inhomogeneous pallet 4 that makes of gas pressure intensity.According to one embodiment of present invention, described securing member can comprise: pressure ring 7 and compression ring elevating mechanism 8, described compression ring elevating mechanism 8 is arranged on the below of described pressure ring 7, for pressure ring described in lifting 7, thereby can facilitate the fixing and dismounting of described pallet 4.
Through above-mentioned processing of wafers, the temperature of wafer 6 raises, but by pass into heat-conduction medium between chuck 3 and pallet 4, heat-conduction medium is blowed to the lower surface of pallet 4 from gas feed path 5, cooling pallet 4 effectively, pallet 4 is again by the cooling wafer 6 of heat exchange and guarantee the uniformity of wafer 6 temperature.
When 1 pair of wafer of reative cell 6 carries out plasma treatment while finishing, the pallet 4 that is placed with wafer 6 leaves reative cell 1.
In an embodiment of the present embodiment, can be in reative cell 1 wafer processing process to wafer 6, comprise wafer 6 carried out to plasma treatment, as etching technics etc.
The improvement structure of the pallet 4 of embodiments of the invention is described below with reference to accompanying drawing 2-5.
As shown in Figure 2-5, pallet 4 comprises tray body 41, groove 42, lug boss 43, raceway groove 44 and neighboring closure 45.
Specifically, the upper surface in tray body 41 is formed with at least one groove 42.Wafer 6 is placed in above-mentioned groove 42.The fixing also supporting wafers 6 of groove 42, and when technique, with pallet 4, enter reative cell 1 and carry out wafer processing process.Lower surface in tray body 41 is formed with a plurality of lug bosses 43 and is formed at the raceway groove 44 between above-mentioned a plurality of lug boss 43, and described raceway groove 44 communicates with each other.Thus, the gas that is supplied to the lower surface place of pallet 4 can form at the lower surface of pallet 4 effective gas circulation, thereby realizes to being contained in the well cooling of wafer in groove 42, with further enhanced etching effect.
According to one embodiment of present invention, the area of raceway groove 44 can be 20～80% of the area of the lower surface of pallet 4.
When wafer 6 is carried out to processing of wafers, heat-conduction medium enters above-mentioned raceway groove 44 by gas feed path 5.In order to limit heat-conduction medium gas, in raceway groove 44, flow, stop gas excessive, at the periphery of the lower surface of tray body 1, form neighboring closure 45.As shown in Fig. 4-5, within lug boss 43 is all positioned at neighboring closure 45 with raceway groove 44.And neighboring closure 45 and lug boss 43 have identical height, thereby can realize further the sealing function to gas circulation.Thus, in the space that heat-conduction medium only forms in pallet 4, chuck 3 and neighboring closure 45, flow, thereby the flowing of gas that has strengthened helium for example reduced or can not occur excessive.And, by the lower surface at pallet 4, lug boss 43 and raceway groove 44 are set, heat-conduction medium can fully contact with the lower surface of pallet 4, smooth and easy flowing in vacuum gap, thereby make the underlaying surface temperature of pallet 4 even, and then by heat, conduct that to make to be positioned at the temperature of the wafer 6 on pallet 4 even, improve the treatment effect of wafer.
As from the foregoing, the lower surface configuration of pallet 4 has larger impact to the temperature homogeneity of wafer 6 and processing of wafers effect.In one embodiment of the invention, lug boss 43 can be arranged in concentric ring.Wherein to take the center of pallet 4 be the center of circle to concentric ring.Certainly, the lower surface configuration that it will be understood by those skilled in the art that pallet 4 is not limited to said structure.When the lug boss 43 of pallet 4 lower surfaces and raceway groove 44 are not arranged with concentric ring form, within it also falls into the protection range of pallet of the present invention.
Fig. 4 and Fig. 5 show respectively two kinds of structures of the pallet 4 of the embodiment of the present invention.The optional structure of the lower surface of pallet 4 of the present invention will be described respectively in detail below with reference to Fig. 4, Fig. 5.
The first embodiment
Fig. 4 has shown according to the lower surface configuration of pallet 4 of the present invention embodiment.As shown in Figure 4, described lug boss 43 can form arcuate structure.Each lug boss 43 is arranged in take the concentric ring that the center of pallet 4 is the center of circle.Between lug boss 43, form the raceway groove 44 communicating with each other.Heat-conduction medium flows in above-mentioned raceway groove 44, thereby realizes well the object of the temperature that reduces pallet 4.Meanwhile, due to the existence of neighboring closure 45, heat-conduction medium can not occur excessive.
Certainly, it will be appreciated by those skilled in the art that, when lug boss 43 and raceway groove 44 are embodied as other shapes, the degree of depth and width, for example described lug boss 43 also can form the arcuate structure with different-thickness, and its distribution has other predetermined shapes, such as oval or square etc.It should be noted that, within above-mentioned lug boss 43 distributed architectures with different predetermined patterns also fall into protection scope of the present invention.
According to one embodiment of present invention, the area of described raceway groove 44 can account for pallet 4 area 20～80%.Preferably, the area of described raceway groove 44 account for described pallet 4 lower surface area 40%.
The second embodiment
Fig. 5 has shown another the optional embodiment according to the lower surface configuration of pallet 4 of the present invention.As shown in Figure 5, described lug boss 43 forms cylindrical.Each lug boss 43 is arranged in take the concentric ring that the center of pallet 4 is the center of circle.Between lug boss 43, form the raceway groove 44 communicate with each other, interior the flowing of raceway groove 44 that wherein heat-conduction medium can be between tubular lug boss 43, and due to the effect of neighboring closure 45, for example the heat-conduction medium of helium can be not excessive.Heat-conduction medium contacts with the lower surface of pallet 4 by raceway groove 44, thereby has reduced equably the temperature of pallet 4, and then reduces the temperature that is positioned at the wafer 6 on pallet 4, from strengthening the etching effect of wafer 6.
It should be noted that, described lug boss 43 can form other shape, for example prismatic or other polygon column structures.It should be noted that, above-mentioned have within difform lug boss 43 also falls into protection scope of the present invention.
Below with reference to Fig. 6, the manufacture method of described pallet 4 once is simply described.As shown in Figure 6, described method can comprise the steps:
S101: tray body is provided.Described pallet can have predetermined shape.
First, can form according to the actual needs groove 42 at the upper surface of tray body 41.This groove 42 can be for holding, fixing and supporting wafers 6.When carrying out processing of wafers, wafer 6 enters reative cell 1 with pallet 4 and carries out wafer processing process.
S102: the gas-guiding structure that forms pallet lower surface.
Described gas-guiding structure consists of neighboring closure 45, lug boss 43 and raceway groove 44.Below by the formation method of the described conductor structure of explanation.First, the periphery at the lower surface of tray body 41 forms neighboring closure 45.Then in the lower surface of tray body 41, form a plurality of lug bosses 43 and the raceway groove 44 between described lug boss 43, the forming requirements of raceway groove is that raceway groove 44 inside communicate with each other, with allow gas can be freely, motion glibly.Within a plurality of lug bosses 43 and raceway groove 44 are positioned at neighboring closure 45.According to one embodiment of present invention, the area of raceway groove 44 may be embodied as pallet 4 lower surface area 20～80%.
When wafer 6 is carried out to processing of wafers, heat-conduction medium enters above-mentioned raceway groove 44 by gas feed path 5 via the upper surface of chuck 3.Due to the sealing function of neighboring closure 45, in the space that heat-conduction medium only forms in pallet 4, chuck 3 and neighboring closure 45, flow, can not occur excessive.And, by the lower surface at pallet 4, lug boss 43 and raceway groove 44 are set, heat-conduction medium can fully contact with the lower surface of pallet 4, smooth and easy flowing in described space, thereby make the underlaying surface temperature of pallet 4 even, and then by heat, conduct that to make to be positioned at the temperature of the wafer 6 on pallet 4 even, improve the effect of the PROCESS FOR TREATMENT (for example etching) of wafer.
As from the foregoing, the lower surface of described pallet 4 according to an embodiment of the invention improvement structure has good effect to the temperature homogeneity of wafer 6 and processing of wafers effect.In pallet manufacture method according to an embodiment of the invention, described lug boss 43 can be formed to concentric ring, it is the center of circle that described concentric ring be take the center of pallet 4.Described concentric ring interval within a predetermined distance, and is formed with a plurality of breach on concentric ring described in each, to form described raceway groove 44.Certainly, the lower surface configuration that it will be understood by those skilled in the art that pallet 4 also can form other mode as above.
The pallet obtaining according to the manufacture method of the pallet of the embodiment of the present invention, can realize heat-conduction medium mobile unobstructed between pallet and chuck, makes the temperature of pallet more even.By reducing the temperature of pallet, and then reduce the temperature that is positioned at the wafer on pallet, to obtain the effect of good for example etching.
In the description of this specification, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, the schematic statement of above-mentioned term is not necessarily referred to identical embodiment or example.And the specific features of description, structure, material or feature can be with suitable mode combinations in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that: in the situation that not departing from principle of the present invention and aim, can carry out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is limited by claim and equivalent thereof.
Claims (11)
1. a wafer processing apparatus, is characterized in that, comprising:
Reative cell;
Pedestal, described pedestal is contained in described reative cell;
Chuck, described chuck is arranged on described pedestal;
Pallet, described pallet is arranged on described chuck removedly, and described pallet comprises:
Tray body;
At least one groove, described groove is formed on the upper surface of described tray body to hold wafer;
Neighboring closure, described neighboring closure is formed on the periphery of the lower surface of described tray body;
A plurality of lug bosses, described a plurality of boss are in the lower surface of described tray body and within being positioned at described neighboring closure; And
Be formed on the raceway groove between described a plurality of lug boss, described raceway groove communicates with each other; And
Gas feed path, for providing gas tangentially to the lower surface of described pallet.
2. wafer processing apparatus as claimed in claim 1, is characterized in that, the area of described raceway groove is 20～80% of described pallet lower surface area.
3. wafer processing apparatus as claimed in claim 2, is characterized in that, described lug boss is cylinder shape or arc.
4. wafer processing apparatus as claimed in claim 2 or claim 3, is characterized in that, described neighboring closure and described lug boss have identical height.
5. wafer processing apparatus as claimed in claim 1, is characterized in that, described lug boss is arranged in concentric ring, and it is the center of circle that described concentric ring be take described pallet center.
6. wafer processing apparatus as claimed in claim 1, is characterized in that, described reative cell is for carrying out plasma treatment to wafer.
7. wafer processing apparatus as claimed in claim 1, is characterized in that, the upper surface of described chuck is formed with a plurality of perforates, is supplied to the lower surface of described pallet for the gas that gas feed path is supplied with.
8. wafer processing apparatus as claimed in claim 7, is characterized in that, described gas feed path comprises:
Main channel part, described main channel part is formed in described pedestal and chuck; And
Branched bottom part, described branched bottom part is communicated with described main channel part and described a plurality of perforate fluid respectively.
9. wafer processing apparatus as claimed in claim 8, further comprises:
Gas source, described gas source is communicated with described gas feed path fluid.
10. wafer processing apparatus as claimed in claim 9, is characterized in that, described gas source is for being supplied to described gas feed path by heat-conduction medium.
11. wafer processing apparatus as claimed in claim 1, further comprise:
Securing member, described securing member is for being fixed on chuck by pallet, and with by described pallet and described chuck close contact, described securing member comprises:
Pressure ring; And
Compression ring elevating mechanism, described compression ring elevating mechanism is arranged on the below of described pressure ring, for pressure ring described in lifting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010291676.2A CN102412176B (en) | 2010-09-26 | 2010-09-26 | Pallet and wafer processing equipment possessing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010291676.2A CN102412176B (en) | 2010-09-26 | 2010-09-26 | Pallet and wafer processing equipment possessing the same |
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| Publication Number | Publication Date |
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| CN102412176A CN102412176A (en) | 2012-04-11 |
| CN102412176B true CN102412176B (en) | 2014-08-27 |
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| CN201010291676.2A Active CN102412176B (en) | 2010-09-26 | 2010-09-26 | Pallet and wafer processing equipment possessing the same |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103855057B (en) * | 2012-12-04 | 2016-04-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | The cooling means of pallet lift device, pre-heating device and high temperature pallet |
| CN104576484A (en) * | 2013-10-12 | 2015-04-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray structure in semiconductor equipment |
| CN105448776A (en) * | 2014-10-16 | 2016-03-30 | 东莞市中镓半导体科技有限公司 | Pallet system used for plasma dry etching |
| KR101504880B1 (en) * | 2014-11-14 | 2015-03-20 | 주식회사 기가레인 | Unit for supporting substrate |
| CN104835765A (en) * | 2015-04-27 | 2015-08-12 | 沈阳拓荆科技有限公司 | Temperature-controllable heating plate with boss surface structure arranged in polygon shape |
| CN106298417B (en) * | 2015-05-14 | 2018-08-24 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN108538768A (en) * | 2018-04-26 | 2018-09-14 | 徐州同鑫光电科技股份有限公司 | Graphical sapphire substrate pallet in a kind of dry etching |
| CN111180370A (en) * | 2020-02-21 | 2020-05-19 | 北京北方华创微电子装备有限公司 | Wafer bearing tray and semiconductor processing equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201142322Y (en) * | 2007-08-17 | 2008-10-29 | 力鼎精密股份有限公司 | Improved structure of carrier disk |
| CN101487138A (en) * | 2008-01-17 | 2009-07-22 | 矽延电子实业有限公司 | Silicon wafer bearing disk for epitaxial manufacture process |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4020938B2 (en) * | 2005-08-22 | 2007-12-12 | 東京エレクトロン株式会社 | Semiconductor wafer transfer tray and semiconductor wafer transfer system |
| US8582274B2 (en) * | 2009-02-18 | 2013-11-12 | Ulvac, Inc. | Tray for transporting wafers and method for fixing wafers onto the tray |
-
2010
- 2010-09-26 CN CN201010291676.2A patent/CN102412176B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201142322Y (en) * | 2007-08-17 | 2008-10-29 | 力鼎精密股份有限公司 | Improved structure of carrier disk |
| CN101487138A (en) * | 2008-01-17 | 2009-07-22 | 矽延电子实业有限公司 | Silicon wafer bearing disk for epitaxial manufacture process |
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| CN102412176A (en) | 2012-04-11 |
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Address after: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 100176 No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beijing North China microelectronics equipment Co Ltd |