CN104835765A - Temperature-controllable heating plate with boss surface structure arranged in polygon shape - Google Patents
Temperature-controllable heating plate with boss surface structure arranged in polygon shape Download PDFInfo
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- CN104835765A CN104835765A CN201510210085.0A CN201510210085A CN104835765A CN 104835765 A CN104835765 A CN 104835765A CN 201510210085 A CN201510210085 A CN 201510210085A CN 104835765 A CN104835765 A CN 104835765A
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- heating plate
- boss
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- temperature
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Abstract
A temperature-controllable heating plate with a boss surface structure arranged in a polygon shape comprises a heating plate provided with a central gas inlet hole. The outer circle of the heating plate is provided with gas recovery holes, and N bosses are arranged on the surface. The N bosses form the polygon structure. The polygon structure is a regular boss structure having five edges, six edges, eight edges or the like. According to the work principle, a heat-conducting medium enters the surface of the heating plate through the central gas inlet hole of the heating plate, flowing space of the heat-conducting medium is formed in gaps among the bosses, gas finally enters the gas recovery holes in the outer circle of the hearing plate and returns to a heat-conducting medium cooling device from the inner part of the heating plate, and cooling is realized in the heat-conducting medium cooling device. The cooled gas flows in from the center of the heating plate once again so as to realize cycling flowing of the heat-conducting medium. According to the invention, the gas distribution structure is reasonably designed, and the heat-conducting medium is enabled to be directly, rapidly and uniformly distributed between the heating plate and a wafer, so that rapid and accurate control over the temperature of the wafer is realized.
Description
Technical field
The present invention relates to a kind of disk structure being applied to the controllable temperature heating plate of semiconductor deposition equipment.Use polygon boss card distribution of gas form, to realize the accurate control to wafer temperature.Belong to semiconductive thin film deposition applications and manufacturing technology field.
Background technology
Semiconductor equipment often needs to make wafer and cavity space preheating or maintains required for deposition reaction temperature when deposition reaction, the object that most of semiconductor deposition equipment all can use heating plate or electrostatic chuck to realize wafer preheating, but because mostly deposition reaction is to carry out under vacuum, vacuum environment is heat-conducting medium for want of, and heat-conductive characteristic is poor.Often cannot fast wafer be preheating to temperature required, or cannot uniformly by wafer preheating before deposition reaction.In the semiconductor coated film equipment participated in there being radio frequency, when the energy that radio frequency excites arrives crystal column surface, because the shortage of heat-conduction medium, the temperature of crystal column surface often can be made again to raise fast, make wafer surface temperature exceed deposition temperature required, and wafer is damaged.Along with the increase gradually of wafer size, the temperature homogeneity of wafer itself directly decides the good or bad of wafer quality, and the raising of temperature control to the raising of production efficiency and product yield is fast and accurately all vital.
The temperature that existing semiconductor deposition equipment heating plate and electrostatic chuck mostly only have heating plate self regulates and temperature controlling function, and the temperature for wafer cannot reach and accurately control.But deposition reaction be badly in need of most really to wafer temperature quick, accurately control.Only have and the temperature of wafer is maintained in the temperature range needed for deposition reaction fast and accurately, the lifting to product yield and efficiency could be realized.
Summary of the invention
The present invention, for the purpose of solving the problem, mainly solves the problem that fast, accurately cannot control wafer temperature existing for existing heating plate and electrostatic chuck.The present invention forms certain air gap by heating plate surface polygon boss structure between heating plate surface and wafer, and pass into the good heat-conducting gas of thermal conduction effect wherein as heat transfer medium, the temperature of heating plate is reached wafer fast, or the temperature of wafer is reached on heating plate rapidly derives.Designed by rational disk structure, heat-conducting medium can be flowed rapidly and uniformly in space, realize the heat exchange of heating plate and wafer in time.
For achieving the above object, the present invention adopts following technical proposals: a kind of controllable temperature heating plate of boss surface structure of polygon distribution.Adopt the plateau form in a kind of polygon distribution of heating plate surface design, the middle entrance imported as gas, the boss that card has polygon rule to distribute, the flowing space of heat-conducting medium is formed in the gap of boss and boss, heat-conducting medium is transported to the fringe region of heating plate from centre by boss gap, because heat-conducting medium can make flow velocity reduce because of the pressure loss in flow process, therefore press pressure medium loss rule at the boss structure on heating plate surface, reduce gradually from centre to edge lug boss size, the middle medium flow space to edge is strengthened gradually, identical to realize the heat that centerand edge takes away, reach and accurately control wafer temperature.Gas finally can be back to heat-conducting medium cooling device from heating plate inside in the aperture of heating plate cylindrical, and realizes cooling wherein, to be taken away by unnecessary heat.Cooled gas can flow into from heating plate center, again to realize circulating of heat-conducting medium.
Beneficial effect of the present invention and feature:
By the surperficial boss structure that a kind of polygon distributes, between heating plate and wafer, form certain inter-air space, and in this inter-air space, pass into the higher heat-conducting medium of the coefficient of heat conduction, in order to strengthen the heat conduction efficiency under vacuum environment.By the surface gas distributed architecture of rational Design on Plane, make heat-conducting medium can directly, fast, be evenly distributed between heating plate and wafer, and the pressure brought according to media flow and change in flow rule determination regional size or boss size, regulate the heat that heat-conducting medium is taken away, to realize the quick and precisely control to wafer temperature.The rate of finished products of further raising wafer and the production efficiency of semiconductor deposition equipment.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
In figure, piece mark represents respectively:
1, air feeding in center hole; 2, boss; 3, gas recovery holes; 4, heating plate.
Below in conjunction with drawings and Examples, the present invention is further illustrated.
Embodiment
Embodiment
As shown in Figure 1, a kind of controllable temperature heating plate of boss surface structure of polygon distribution, comprises the heating plate 4 being provided with air feeding in center hole 1.The cylindrical of above-mentioned heating plate 4 is provided with gas recovery holes 3 and surface is provided with N number of boss 2, and N number of boss 2 forms polygonized structure.
Described polygonized structure, in pentagon or hexagon or octagon etc. rule boss structure;
Described boss 2 has gap with boss 2;
The size of the surperficial boss 2 of described heating plate 4 diminishes from centre gradually to edge.
Operation principle: heat-conduction medium enters heating plate surface from the air feeding in center hole 1 of heating plate 4, is used for discharging pressure when gas enters at center certain space.The boss 2 that heating plate 4 surface has polygon rule to distribute, the flowing space of heat-conducting medium is formed at boss 2 and the gap of boss 2, heat-conducting medium is transported to the fringe region of heating plate from centre by boss 2 gap, because heat-conducting medium can make flow velocity reduce because of the pressure loss in flow process, therefore press pressure medium loss rule at the boss 2 on heating plate 4 surface, reduce gradually from centre to the size of edge lug boss 2, the middle medium flow space to edge is strengthened gradually, identical to realize the heat that centerand edge takes away, reach and accurately control wafer temperature.Gas finally in the gas recovery holes 3 of heating plate cylindrical, can be back to heat-conducting medium cooling device from the inside of heating plate 4, and realizes cooling wherein, to be taken away by unnecessary heat.Cooled gas can flow into from heating plate center, again to realize circulating of heat-conducting medium.
Can the stagnant area of above-mentioned heating plate cylindrical be designed to open, make heat-conducting medium directly diffuse to cavity space and trapping medium does not re-start circulation.
Claims (4)
1. a controllable temperature heating plate for the boss surface structure of polygon distribution, it is characterized in that: it comprises the heating plate being provided with air feeding in center hole, the cylindrical of above-mentioned heating plate is provided with gas recovery holes and surface is provided with N number of boss, and N number of boss forms polygonized structure.
2. the controllable temperature heating plate of the boss surface structure of polygon distribution as claimed in claim 1, is characterized in that: boss forms polygonized structure, and this structure is the boss structure of pentagon or the rule such as hexagon or octagon.
3. the controllable temperature heating plate of the boss surface structure of polygon distribution as claimed in claim 1, is characterized in that: described boss and boss have gap.
4. the controllable temperature heating plate of the boss surface structure of polygon distribution as claimed in claim 1, is characterized in that: the size of described heating plate surface boss diminishes from centre gradually to edge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510210085.0A CN104835765A (en) | 2015-04-27 | 2015-04-27 | Temperature-controllable heating plate with boss surface structure arranged in polygon shape |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510210085.0A CN104835765A (en) | 2015-04-27 | 2015-04-27 | Temperature-controllable heating plate with boss surface structure arranged in polygon shape |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104835765A true CN104835765A (en) | 2015-08-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510210085.0A Pending CN104835765A (en) | 2015-04-27 | 2015-04-27 | Temperature-controllable heating plate with boss surface structure arranged in polygon shape |
Country Status (1)
| Country | Link |
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| CN (1) | CN104835765A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106353909A (en) * | 2016-11-28 | 2017-01-25 | 深圳市华星光电技术有限公司 | Heating plate and baking device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000317761A (en) * | 1999-03-01 | 2000-11-21 | Toto Ltd | Electrostatic chuck and attracting method |
| JP2002141332A (en) * | 2000-10-30 | 2002-05-17 | Hitachi Ltd | Semiconductor manufacturing equipment |
| US20040117977A1 (en) * | 2000-12-05 | 2004-06-24 | Yasuji Hiramatsu | Ceramic substrate for semiconductor manufacturing and inspecting devices, and method of manufacturing the ceramic substrate |
| US20090038548A1 (en) * | 2006-03-31 | 2009-02-12 | Tokyo Electron Limited | Substrate treating apparatus and treating gas emitting mechanism |
| CN102412176A (en) * | 2010-09-26 | 2012-04-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray and wafer processing equipment with same |
| US20140076515A1 (en) * | 2007-09-03 | 2014-03-20 | Tokyo Electron Limited | Substrate mounting table, substrate processing apparatus and temperature control method |
-
2015
- 2015-04-27 CN CN201510210085.0A patent/CN104835765A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000317761A (en) * | 1999-03-01 | 2000-11-21 | Toto Ltd | Electrostatic chuck and attracting method |
| JP2002141332A (en) * | 2000-10-30 | 2002-05-17 | Hitachi Ltd | Semiconductor manufacturing equipment |
| US20040117977A1 (en) * | 2000-12-05 | 2004-06-24 | Yasuji Hiramatsu | Ceramic substrate for semiconductor manufacturing and inspecting devices, and method of manufacturing the ceramic substrate |
| US20090038548A1 (en) * | 2006-03-31 | 2009-02-12 | Tokyo Electron Limited | Substrate treating apparatus and treating gas emitting mechanism |
| US20140076515A1 (en) * | 2007-09-03 | 2014-03-20 | Tokyo Electron Limited | Substrate mounting table, substrate processing apparatus and temperature control method |
| CN102412176A (en) * | 2010-09-26 | 2012-04-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray and wafer processing equipment with same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106353909A (en) * | 2016-11-28 | 2017-01-25 | 深圳市华星光电技术有限公司 | Heating plate and baking device |
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| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150812 |