CN105047543A - Controllable temperature heating disc of spiral-type surface structure - Google Patents
Controllable temperature heating disc of spiral-type surface structure Download PDFInfo
- Publication number
- CN105047543A CN105047543A CN201510338793.2A CN201510338793A CN105047543A CN 105047543 A CN105047543 A CN 105047543A CN 201510338793 A CN201510338793 A CN 201510338793A CN 105047543 A CN105047543 A CN 105047543A
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- heating plate
- heating disc
- heat
- wafer
- gas
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 63
- 230000005855 radiation Effects 0.000 claims abstract description 3
- 238000011084 recovery Methods 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 11
- 238000001816 cooling Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009510 drug design Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A controllable temperature heating disc of a spiral-type surface structure is disclosed. An existing heating disc and an electrostatic chuck can not rapidly, uniformly and accurately control a wafer temperature. By using the heating disc of the invention, the above problem is mainly solved. The heating disc adopts a form in which a spiral type groove structure is designed on a surface of the heating disc. A middle portion is served as an entrance of gas introduction. A round space is used to release pressure brought by entering of a gas and a heat-conducting medium which enters intermediately is conveyed to an edge area of the heating disc through a plurality of spiral-type radiation grooves. Through an air inlet channel, a certain air gap is formed between a heating disc surface and a wafer and a heat conduction gas which has a good thermal conduction effect is put into and served as a heat-transfer medium. A temperature is rapidly transmitted to the wafer through the heating disc or the temperature of the wafer is rapidly transmitted to the heating disc and is led out. Through a reasonable disc surface structure design, the heat-conducting medium can rapidly and uniformly flow in the gap and heat exchange between the heating disc and the wafer is timely realized. The heating disc can be widely used in the semiconductor films deposition technology field.
Description
Technical field
The present invention relates to a kind of disk structure being applied to the controllable temperature heating plate of semiconductor deposition equipment.Use spiral type card distribution of gas form, with realize to wafer temperature quick, even, accurately control.Belong to semiconductive thin film deposition applications and manufacturing technology field.
Background technology
Semiconductor equipment often needs to make wafer and cavity space preheating or maintains required for deposition reaction temperature when carrying out deposition reaction, most of semiconductor deposition equipment all can use heating plate or electrostatic chuck to realize to the object of wafer preheating.But because mostly deposition reaction is to carry out under vacuum, vacuum environment is heat-conducting medium for want of, and heat-conductive characteristic is poor.Often cannot fast wafer be preheating to temperature required, or cannot uniformly by wafer preheating before deposition reaction.In the semiconductor coated film equipment participated in there being radio frequency, when the energy that radio frequency excites arrives crystal column surface, because the shortage of heat-conduction medium, the temperature of crystal column surface often can be made again to raise fast, make wafer surface temperature exceed deposition temperature required, and wafer is damaged.Along with the increase gradually of wafer size, the temperature homogeneity of wafer itself directly decides the good or bad of wafer quality, and temperature controls the raising of production efficiency and the raising of product yield fast, accurately, is uniformly all vital.
The temperature that the heating plate that existing semiconductor deposition equipment uses and electrostatic chuck mostly only have heating plate self regulates and temperature controlling function, and the temperature for wafer cannot reach and control fast, evenly, accurately.But deposition reaction be badly in need of most really to wafer temperature quick, even, accurately control.Only have in the temperature range that the temperature of wafer maintained fast, evenly, accurately needed for deposition reaction, the lifting to product yield and efficiency could be realized.
Summary of the invention
The present invention for the purpose of solving the problem, mainly solve existing for existing heating plate and electrostatic chuck cannot fast, evenly, accurately control the problem of wafer temperature.The present invention forms certain air gap by inlet channel between heating plate surface and wafer, and pass into the good heat-conducting gas of thermal conduction effect wherein as heat transfer medium, temperature through heating plate passes to wafer fast, or the temperature of wafer is reached rapidly on heating plate and derive.Designed by rational disk structure, heat-conducting medium can be flowed rapidly and uniformly in space, realize the heat exchange of heating plate and wafer in time.
For achieving the above object, the present invention adopts following technical proposals: a kind of controllable temperature heating plate of spiral type surface texture, this heating plate adopts in a kind of volute groove structure form of heating plate surface design, the middle entrance imported as gas, has a circular space to be used for discharging pressure when gas enters and it is transported to the fringe region of heating plate by the heat-conducting medium that centre enters by the groove of many spiral type radiation.Vorticose trench design make the flowing between heat-conducting medium and conducting more smooth and easy, strengthen because of each medium flow through the different and non-uniform temperature phenomenon that causes in space, accurately to control wafer temperature.Gas finally can be back to heat-conducting medium cooling device from heating plate inside in the aperture at heating plate edge, and realizes cooling wherein, to be taken away by unnecessary heat.Cooled gas can flow into from heating plate center, again to realize circulating of heat-conducting medium.Also the trench design of heating plate cylindrical can be become open, make heat-conducting medium directly diffuse to cavity space and trapping medium does not re-start circulation.Heat-conduction medium enters heating plate surface from the air feeding in center hole at heating plate center, and at center, a circular space is used for discharging pressure when gas enters.
Beneficial effect of the present invention and feature:
By the groove of spiral type surface texture, between heating plate and wafer, form certain inter-air space, and in this inter-air space, pass into the higher heat-conducting medium of the coefficient of heat conduction, in order to strengthen the heat conduction efficiency under vacuum environment.By the surface gas distributed architecture of rational Design on Plane, make heat-conducting medium can directly, fast, be evenly distributed between heating plate and wafer, and the pressure brought according to media flow and change in flow rule determination regional size or groove dimensions, regulate the heat that heat-conducting medium is taken away, to realize the quick and precisely control to wafer temperature.The rate of finished products of further raising wafer and the production efficiency of semiconductor deposition equipment.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
In figure, piece mark represents respectively:
1, air feeding in center hole; 2, gas flow groove; 3, gas recovery holes; 4, heating plate.
Below in conjunction with drawings and Examples, the present invention is further illustrated.
Embodiment
Embodiment
As shown in Figure 1, a kind of controllable temperature heating plate of spiral type surface texture, the center of described heating plate 4 is provided with air admission hole 1; The surface placement of described heating plate 4 is shaped with gas flow groove 2; The edge of described heating plate 4 is provided with gas recovery holes 3.
Above-mentioned air admission hole 1 can adopt the frame mode of a direct air inlet of air admission hole to realize, and also can adopt and give vent to anger from multiple air admission hole after a little plenum chamber, reach better intake uniformity.
Above-mentioned air admission hole 1 is used for discharging pressure when gas enters at Center circular space.
Above-mentioned gas flow channel 2 is designed to vortex-like line layout from center to edge distribution, to make the heat-conduction medium entered flow to the fringe region of heating plate 4, Scrawl trench design make the flowing between heat-conducting medium and conducting more smooth and easy, strengthen because each medium institute flows through space difference and the non-uniform temperature phenomenon that causes, accurately to control wafer temperature.
Above-mentioned gas flow channel 2 is provided with certain cavity volume and is used for storing and conveying heat-conducting medium, but cavity volume can not be excessive in order to avoid cannot flow fast because of the pressure loss in diffusion process at heat-conducting medium.
Described gas recovery holes 3, gas finally can be back to heat-conducting medium cooling device from heating plate inside in the gas recovery holes 3 at heating plate 4 edge, and realize cooling wherein, unnecessary heat is taken away, cooled gas can flow into from heating plate center, again to realize circulating of heat-conducting medium.
Trench design on described heating plate 4 becomes closed or open, and trench design becomes open makes heat-conducting medium directly diffuse to cavity space and trapping medium does not re-start circulation.
During work, heat-conducting medium enters heating plate 4 surface from the air admission hole 1 at heating plate 4 center, is used for discharging pressure when gas enters at circular space.Via the gas flow groove 2 of vortex-like line layout distribution from the center of heating plate 4 to edge flowing.Behind arrival heating plate 4 edge, be back to heat-conducting medium cooling device from the gas recovery holes 3 being arranged in heating plate 4 edge from heating plate inside, and realize cooling wherein, to be taken away by unnecessary heat.Cooled gas can flow into from heating plate 4 center again, to realize circulating of heat-conducting medium, and repeats the above-mentioned course of work.
Claims (5)
1. the controllable temperature heating plate of a spiral type surface texture, it is characterized in that: this heating plate adopts in a kind of volute groove structure form of heating plate surface design, the middle entrance imported as gas, has a circular space to be used for discharging pressure when gas enters and it is transported to the fringe region of heating plate by the heat-conducting medium that centre enters by the groove of many spiral type radiation.
2. the controllable temperature heating plate of spiral type surface texture as claimed in claim 1, is characterized in that: the center of described heating plate is provided with air admission hole; The surface placement of described heating plate is shaped with gas flow groove; The edge of described heating plate is provided with gas recovery holes.
3. the controllable temperature heating plate of spiral type surface texture as claimed in claim 2, it is characterized in that: described air admission hole adopts the version of a direct air inlet of air admission hole or adopts and gives vent to anger from multiple air admission hole after a little plenum chamber, above-mentioned air admission hole Center circular space be used for release gas enter time pressure.
4. the controllable temperature heating plate of spiral type surface texture as claimed in claim 2, is characterized in that: described gas flow trench design is from center to the version of edge distribution with vortex-like line layout.
5. the controllable temperature heating plate of spiral type surface texture as claimed in claim 1 or 2, is characterized in that: the trench design on described heating plate becomes closed or open.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510338793.2A CN105047543A (en) | 2015-06-17 | 2015-06-17 | Controllable temperature heating disc of spiral-type surface structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510338793.2A CN105047543A (en) | 2015-06-17 | 2015-06-17 | Controllable temperature heating disc of spiral-type surface structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105047543A true CN105047543A (en) | 2015-11-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510338793.2A Pending CN105047543A (en) | 2015-06-17 | 2015-06-17 | Controllable temperature heating disc of spiral-type surface structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022016962A1 (en) * | 2020-07-21 | 2022-01-27 | 长鑫存储技术有限公司 | Temperature regulating system and temperature regulating method |
| CN114318304A (en) * | 2021-12-27 | 2022-04-12 | 拓荆科技股份有限公司 | Heating plate structure |
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| CN200988127Y (en) * | 2006-12-26 | 2007-12-12 | 中国石油兰州石油化工公司 | Plate tube welding protective cover |
| CN201051492Y (en) * | 2007-01-08 | 2008-04-23 | 苏明宗 | Temperature-adjusting detection bearing device |
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| CN202415739U (en) * | 2011-11-21 | 2012-09-05 | 扬州乾照光电有限公司 | Light emitting diode (LED) epitaxial growth device |
| CN102656294A (en) * | 2009-10-16 | 2012-09-05 | 艾克斯特朗欧洲公司 | CVD reactor having a substrate holder resting on a gas cushion comprising a plurality of zones |
| US20130098477A1 (en) * | 2011-10-19 | 2013-04-25 | Joseph Yudovsky | Apparatus and Method for Providing Uniform Flow of Gas |
| CN203281280U (en) * | 2013-05-31 | 2013-11-13 | 重庆瀚威迪科技有限公司 | Wet type granulator |
| CN104099613A (en) * | 2013-04-03 | 2014-10-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and plasma processing equipment |
-
2015
- 2015-06-17 CN CN201510338793.2A patent/CN105047543A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1340370A (en) * | 2000-09-01 | 2002-03-20 | 王正光 | Bubbling-type multi-tube liquid film flushing cleaner |
| CN200988127Y (en) * | 2006-12-26 | 2007-12-12 | 中国石油兰州石油化工公司 | Plate tube welding protective cover |
| CN201051492Y (en) * | 2007-01-08 | 2008-04-23 | 苏明宗 | Temperature-adjusting detection bearing device |
| US20090242174A1 (en) * | 2008-03-31 | 2009-10-01 | Mccutchen Co. | Vapor vortex heat sink |
| CN102656294A (en) * | 2009-10-16 | 2012-09-05 | 艾克斯特朗欧洲公司 | CVD reactor having a substrate holder resting on a gas cushion comprising a plurality of zones |
| US20130098477A1 (en) * | 2011-10-19 | 2013-04-25 | Joseph Yudovsky | Apparatus and Method for Providing Uniform Flow of Gas |
| CN202415739U (en) * | 2011-11-21 | 2012-09-05 | 扬州乾照光电有限公司 | Light emitting diode (LED) epitaxial growth device |
| CN104099613A (en) * | 2013-04-03 | 2014-10-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and plasma processing equipment |
| CN203281280U (en) * | 2013-05-31 | 2013-11-13 | 重庆瀚威迪科技有限公司 | Wet type granulator |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022016962A1 (en) * | 2020-07-21 | 2022-01-27 | 长鑫存储技术有限公司 | Temperature regulating system and temperature regulating method |
| CN114318304A (en) * | 2021-12-27 | 2022-04-12 | 拓荆科技股份有限公司 | Heating plate structure |
| CN114318304B (en) * | 2021-12-27 | 2023-11-24 | 拓荆科技股份有限公司 | Heating plate structure |
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Application publication date: 20151111 |