CN104835766B - A kind of controllable temperature heating dish of snowflake shape surface texture - Google Patents
A kind of controllable temperature heating dish of snowflake shape surface texture Download PDFInfo
- Publication number
- CN104835766B CN104835766B CN201510210174.5A CN201510210174A CN104835766B CN 104835766 B CN104835766 B CN 104835766B CN 201510210174 A CN201510210174 A CN 201510210174A CN 104835766 B CN104835766 B CN 104835766B
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- Prior art keywords
- heating dish
- heat
- wafer
- snowflake shape
- heating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Abstract
A kind of controllable temperature heating dish of snowflake shape surface texture, mainly solve the problems, such as existing heating dish and present in electrostatic chuck can not quickly, accurately control wafer temperature.It includes being formed with the heating dish in air feeding in center hole, and the edge of the heating dish is equipped with gas recovery holes；The heating panel surface has gas flow channel along snowflake shape layout.The width dimensions of above-mentioned gas flow channel are small by center gradual change.By the groove of snowflake shape surface texture, certain inter-air space is formed between heating dish and wafer, and the higher heat-conducting medium of the coefficient of heat conduction is passed through in the inter-air space, to strengthen the heat conduction efficiency under vacuum environment.It is designed by rational disk structure so that heat-conducting medium can rapidly and uniformly flow in gap, realize the heat exchange of heating dish and wafer in time.It can be widely applied to semiconductive thin film deposition applications technical field.
Description
Technical field
The present invention relates to a kind of disk structures of the controllable temperature heating dish applied to semiconductor deposition equipment.Use snowflake shape
Disk gas distribution form, to realize the accurate control to wafer temperature.Belong to semiconductive thin film deposition applications and manufacturing technology
Field.
Background technology
Semiconductor equipment generally requires that wafer and cavity space is made to preheat or maintain deposition reaction institute in deposition reaction
The temperature needed, most of semiconductor deposition equipment all can realize the mesh preheated to wafer using heating dish or electrostatic chuck
's.But because deposition reaction is mostly to carry out under vacuum, for vacuum environment due to a lack of heat-conducting medium, heat-conductive characteristic is poor.
Often can not wafer be quickly preheating to required temperature or can not uniformly be preheated wafer before deposition reaction.It is penetrating
In the semiconductor coated film equipment that frequency participates in, when the energy that radio frequency is excited reaches crystal column surface, because heat-conduction medium lacks
It is weary, often the temperature of crystal column surface can be made quickly to increase again so that wafer surface temperature makes wafer beyond deposition required temperature
It is damaged.With the gradual increase of wafer size, the temperature uniformity of wafer in itself directly decide the good of wafer quality or
Bad, fast and accurately temperature control is all vital to the raising of production efficiency and the raising of product yield.
Existing semiconductor deposition equipment heating dish and electrostatic chuck mostly only the temperature with heating dish itself adjust and
Temperature controlling function is unable to reach the temperature of wafer and accurately controls.However deposition reaction be most badly in need of really to wafer
Temperature it is quick, accurately control.The temperature of wafer is only fast and accurately maintained to the temperature range needed for deposition reaction
It is interior, it could realize the promotion to product yield and efficiency.
Invention content
The present invention for the purpose of solving the above problems, mainly solve existing heating dish and present in electrostatic chuck can not
Quickly, the problem of accurately controlling wafer temperature.The present invention is formed centainly by inlet channel between heating panel surface and wafer
Air gap, and it is passed through the preferable heat-conducting gas of thermal conduction effect wherein as a heat transfer medium, the temperature of heated disk quickly passes
To wafer or the temperature of wafer is rapidly reached in heating dish and exported.It is designed by rational disk structure so that heat conduction
Medium can rapidly and uniformly flow in gap, realize the heat exchange of heating dish and wafer in time.
To achieve the above object, the present invention uses following technical proposals：A kind of controllable temperature heating of snowflake shape surface texture
Disk.A kind of channel away of snowflake shape is designed using in heating panel surface, the intermediate entrance imported as gas, there are one round
Space be used for discharge gas into fashionable pressure and by its by a plurality of radial groove by centre enter heat-conducting medium be transported to plus
The fringe region of hot plate, heat-conducting medium can reduce flow velocity due to the pressure loss, drop the thermal efficiency of conduction in flow process
It is low, pass through the gradual change of groove width size in structure so that the flowing between heat-conducting medium is more smooth with being connected, and strengthens because of stream
Amount loss and caused by non-uniform temperature phenomenon, accurately to control wafer temperature.Gas is eventually in the aperture of heating plate edge
In be back to heat-conducting medium cooling device inside heating dish, and realize cooling wherein, so that extra heat is taken away.It is cold
But the gas after can be flowed into from heating disk center again, to realize circulating for heat-conducting medium.
Beneficial effects of the present invention and feature：
By the groove of snowflake shape surface texture, certain inter-air space is formed between heating dish and wafer, and at this
The higher heat-conducting medium of the coefficient of heat conduction is passed through in the inter-air space, to strengthen the heat conduction efficiency under vacuum environment.Pass through conjunction
Physics and chemistry design surface gas distributed architecture so that heat-conducting medium can directly, quickly, be evenly distributed in heating dish and wafer
Between, and determine each region size or groove dimensions according to pressure caused by media flow and change in flow rule, to adjust
The heat that section heat-conducting medium is taken away, to realize the quick and precisely control to wafer temperature.Further improve the yield rate of wafer
And the production efficiency of semiconductor deposition equipment.
Description of the drawings
Fig. 1 is the structure diagram of the present invention.
Piece mark represents respectively in figure:
1st, air feeding in center hole；2nd, gas flow channel；3rd, gas recovery holes；4th, heating dish.
The present invention is further illustrated with reference to the accompanying drawings and examples.
Specific embodiment
Embodiment
As shown in Figure 1, a kind of controllable temperature heating dish of snowflake shape surface texture, the heating including being formed with air feeding in center hole 1
Disk 4.The edge of the heating dish 4 is equipped with gas recovery holes 3；4 surface of heating dish is formed with gas flowing along snowflake shape layout
Groove 2；The width dimensions of the gas flow channel 2 are small by center gradual change.Heat-conduction medium by a plurality of radial groove therefrom
Between flow to the fringe region of heating dish 4.Heat-conducting medium can reduce flow velocity in flow process due to the pressure loss, make conduction
The thermal efficiency reduce.Pass through the gradual change of 2 width dimensions of gas flow channel in structure so that the flowing between heat-conducting medium is with leading
It is logical more smooth, strengthen non-uniform temperature phenomenon caused by due to flow loss, accurately to control wafer temperature.Gas eventually exists
Heat-conducting medium cooling device is back to inside heating dish 4 in the gas recovery holes 3 at 4 edge of heating dish, and is realized wherein cold
But, so that extra heat is taken away.Gas after cooling can be flowed into from heating disk center again, to realize following for heat-conducting medium
Circulation moves.Also heat-conducting medium can be made directly to diffuse to cavity space without receiving by the trench design of heating dish outer circle into open
Collection medium re-starts cycle.
Claims (1)
1. a kind of controllable temperature heating dish of snowflake shape surface texture, the structure of the heating dish are：It is designed using in heating panel surface
A kind of channel away of snowflake shape, entrance of the centre as gas importing, is formed with gas recovery holes, feature in the heating dish
It is：The heating panel surface has a gas flow channel along snowflake shape layout, the width dimensions of gas flow channel by center gradually
Become smaller.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510210174.5A CN104835766B (en) | 2015-04-27 | 2015-04-27 | A kind of controllable temperature heating dish of snowflake shape surface texture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510210174.5A CN104835766B (en) | 2015-04-27 | 2015-04-27 | A kind of controllable temperature heating dish of snowflake shape surface texture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104835766A CN104835766A (en) | 2015-08-12 |
| CN104835766B true CN104835766B (en) | 2018-06-26 |
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ID=53813558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510210174.5A Active CN104835766B (en) | 2015-04-27 | 2015-04-27 | A kind of controllable temperature heating dish of snowflake shape surface texture |
Country Status (1)
| Country | Link |
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| CN (1) | CN104835766B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318304B (en) * | 2021-12-27 | 2023-11-24 | 拓荆科技股份有限公司 | Heating plate structure |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5748435A (en) * | 1996-12-30 | 1998-05-05 | Applied Materials, Inc. | Apparatus for controlling backside gas pressure beneath a semiconductor wafer |
| CN1992162A (en) * | 2005-12-27 | 2007-07-04 | 莎姆克株式会社 | Plasma processing method and plasma device |
| CN101243542A (en) * | 2005-08-17 | 2008-08-13 | 应用材料股份有限公司 | Substrate support having brazed plates and resistance heater |
| CN201311921Y (en) * | 2008-09-08 | 2009-09-16 | 力鼎精密股份有限公司 | Wafer carrying device |
| CN201383496Y (en) * | 2008-12-31 | 2010-01-13 | 中微半导体设备(上海)有限公司 | Static chuck |
| CN202926405U (en) * | 2011-08-16 | 2013-05-08 | 福特环球技术公司 | Annular turbo machine nozzle and turbo supercharger used for engine |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001110883A (en) * | 1999-09-29 | 2001-04-20 | Applied Materials Inc | Substrate supporting device and its heat-transfer method |
-
2015
- 2015-04-27 CN CN201510210174.5A patent/CN104835766B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5748435A (en) * | 1996-12-30 | 1998-05-05 | Applied Materials, Inc. | Apparatus for controlling backside gas pressure beneath a semiconductor wafer |
| CN101243542A (en) * | 2005-08-17 | 2008-08-13 | 应用材料股份有限公司 | Substrate support having brazed plates and resistance heater |
| CN1992162A (en) * | 2005-12-27 | 2007-07-04 | 莎姆克株式会社 | Plasma processing method and plasma device |
| CN201311921Y (en) * | 2008-09-08 | 2009-09-16 | 力鼎精密股份有限公司 | Wafer carrying device |
| CN201383496Y (en) * | 2008-12-31 | 2010-01-13 | 中微半导体设备(上海)有限公司 | Static chuck |
| CN202926405U (en) * | 2011-08-16 | 2013-05-08 | 福特环球技术公司 | Annular turbo machine nozzle and turbo supercharger used for engine |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104835766A (en) | 2015-08-12 |
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Address after: No.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province Patentee after: Tuojing Technology Co.,Ltd. Address before: 110179 3rd floor, No.1-1 Xinyuan street, Hunnan New District, Shenyang City, Liaoning Province Patentee before: PIOTECH Co.,Ltd. |