CN104835766A - Temperature-controllable heating plate with snowflake-shaped surface structure - Google Patents
Temperature-controllable heating plate with snowflake-shaped surface structure Download PDFInfo
- Publication number
- CN104835766A CN104835766A CN201510210174.5A CN201510210174A CN104835766A CN 104835766 A CN104835766 A CN 104835766A CN 201510210174 A CN201510210174 A CN 201510210174A CN 104835766 A CN104835766 A CN 104835766A
- Authority
- CN
- China
- Prior art keywords
- heating plate
- temperature
- snowflake
- heat
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Abstract
The invention provides a temperature-controllable heating plate with snowflake-shaped surface structure, mainly solves the problem that an existing heating plate and static chuck fail to rapidly and accurately control the temperature of a wafer. The heating plate provided with a central gas inlet is provided. The edge of the heating plate is provided with gas recovery holes. Gas flowing grooves arranged in a snowflake shape are arranged on the surface of the heating plate. The widths of the gas flowing grooves are gradually reduced from the center. By adopting the grooves with the snowflake-shaped surface structure, certain gas gap space is formed between the heating plate and a wafer, and a heat-conducting medium relatively high in heat conduction coefficient is introduced into the gas gap space to enhance the heat conduction efficiency under a vacuum environment. Through the reasonable plate surface structure design, the heat-conducting medium can rapidly and uniformly flow in gaps, and heat exchange between the heating plate and the wafer is realized. The temperature-controllable heating plate with the snowflake-shaped surface structure can be widely applied to the technical field of semiconductor film deposition application.
Description
Technical field
The present invention relates to a kind of disk structure being applied to the controllable temperature heating plate of semiconductor deposition equipment.Use snowflake shape card distribution of gas form, to realize the accurate control to wafer temperature.Belong to semiconductive thin film deposition applications and manufacturing technology field.
Background technology
Semiconductor equipment often needs to make wafer and cavity space preheating or maintains required for deposition reaction temperature when deposition reaction, most of semiconductor deposition equipment all can use heating plate or electrostatic chuck to realize to the object of wafer preheating.But because mostly deposition reaction is to carry out under vacuum, vacuum environment is heat-conducting medium for want of, and heat-conductive characteristic is poor.Often cannot fast wafer be preheating to temperature required, or cannot uniformly by wafer preheating before deposition reaction.In the semiconductor coated film equipment participated in there being radio frequency, when the energy that radio frequency excites arrives crystal column surface, because the shortage of heat-conduction medium, the temperature of crystal column surface often can be made again to raise fast, make wafer surface temperature exceed deposition temperature required, and wafer is damaged.Along with the increase gradually of wafer size, the temperature homogeneity of wafer itself directly decides the good or bad of wafer quality, and the raising of temperature control to the raising of production efficiency and product yield is fast and accurately all vital.
The temperature that existing semiconductor deposition equipment heating plate and electrostatic chuck mostly only have heating plate self regulates and temperature controlling function, and the temperature for wafer cannot reach and accurately control.But deposition reaction be badly in need of most really to wafer temperature quick, accurately control.Only have and the temperature of wafer is maintained in the temperature range needed for deposition reaction fast and accurately, the lifting to product yield and efficiency could be realized.
Summary of the invention
The present invention, for the purpose of solving the problem, mainly solves the problem that fast, accurately cannot control wafer temperature existing for existing heating plate and electrostatic chuck.The present invention forms certain air gap by inlet channel between heating plate surface and wafer, and pass into the good heat-conducting gas of thermal conduction effect wherein as heat transfer medium, temperature through heating plate passes to wafer fast, or the temperature of wafer is reached rapidly on heating plate and derive.Designed by rational disk structure, heat-conducting medium can be flowed rapidly and uniformly in space, realize the heat exchange of heating plate and wafer in time.
For achieving the above object, the present invention adopts following technical proposals: a kind of controllable temperature heating plate of snowflake shape surface texture.Adopt the channel away a kind of snowflake shape of heating plate surface design, the middle entrance imported as gas, a circular space is had to be used for discharging gas pressure and it is transported to the fringe region of heating plate by the heat-conducting medium that centre enters by many radial grooves when entering, heat-conducting medium can make flow velocity reduce because of the pressure loss in flow process, the heat efficiency of conduction is reduced, in structure by groove width size gradual change, make the flowing between heat-conducting medium and conducting more smooth and easy, strengthen the non-uniform temperature phenomenon caused because of flow loss, accurately to control wafer temperature.Gas finally can be back to heat-conducting medium cooling device from heating plate inside in the aperture at heating plate edge, and realizes cooling wherein, to be taken away by unnecessary heat.Cooled gas can flow into from heating plate center, again to realize circulating of heat-conducting medium.
Beneficial effect of the present invention and feature:
By the groove of snowflake shape surface texture, between heating plate and wafer, form certain inter-air space, and in this inter-air space, pass into the higher heat-conducting medium of the coefficient of heat conduction, in order to strengthen the heat conduction efficiency under vacuum environment.By the surface gas distributed architecture of rational Design on Plane, make heat-conducting medium can directly, fast, be evenly distributed between heating plate and wafer, and the pressure brought according to media flow and change in flow rule determination regional size or groove dimensions, regulate the heat that heat-conducting medium is taken away, to realize the quick and precisely control to wafer temperature.The rate of finished products of further raising wafer and the production efficiency of semiconductor deposition equipment.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
In figure, piece mark represents respectively:
1, air feeding in center hole; 2, gas flow groove; 3, gas recovery holes; 4, heating plate.
Below in conjunction with drawings and Examples, the present invention is further illustrated.
Embodiment
Embodiment
As shown in Figure 1, a kind of controllable temperature heating plate of snowflake shape surface texture, comprises the heating plate 4 being shaped with air feeding in center hole 1.The edge of described heating plate 4 is provided with gas recovery holes 3; Described heating plate 4 surface is shaped with gas flow groove 2 along snowflake shape layout; The width dimensions of described gas flow groove 2 is little by center gradual change.Heat-conduction medium flow to the fringe region of heating plate 4 from centre by many radial grooves.Heat-conducting medium can make flow velocity reduce because of the pressure loss in flow process, and the heat efficiency of conduction is reduced.By the gradual change of gas flow groove 2 width dimensions in structure, make the flowing between heat-conducting medium and conducting more smooth and easy, strengthen the non-uniform temperature phenomenon caused because of flow loss, accurately to control wafer temperature.Gas finally can be back to heat-conducting medium cooling device from heating plate 4 inside in the gas recovery holes 3 at heating plate 4 edge, and realizes cooling wherein, to be taken away by unnecessary heat.Cooled gas can flow into from heating plate center, again to realize circulating of heat-conducting medium.Also the trench design of heating plate cylindrical can be become open, make heat-conducting medium directly diffuse to cavity space and trapping medium does not re-start circulation.
Claims (3)
1. a controllable temperature heating plate for snowflake shape surface texture, is characterized in that the structure of this heating plate is: adopt the channel away a kind of snowflake shape of heating plate surface design, and the middle entrance imported as gas, described heating plate is shaped with gas recovery holes.
2. the controllable temperature heating plate of snowflake shape surface texture as claimed in claim 1, it is characterized in that the concrete structure of heating plate, it comprises the heating plate being shaped with air feeding in center hole, and the edge of described heating plate is provided with gas recovery holes; There is gas flow groove on described heating plate 4 surface along snowflake shape layout.
3. the controllable temperature heating plate of snowflake shape surface texture as claimed in claim 2, is characterized in that: the width dimensions of described gas flow groove is little by center gradual change.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510210174.5A CN104835766B (en) | 2015-04-27 | 2015-04-27 | A kind of controllable temperature heating dish of snowflake shape surface texture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510210174.5A CN104835766B (en) | 2015-04-27 | 2015-04-27 | A kind of controllable temperature heating dish of snowflake shape surface texture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104835766A true CN104835766A (en) | 2015-08-12 |
| CN104835766B CN104835766B (en) | 2018-06-26 |
Family
ID=53813558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510210174.5A Active CN104835766B (en) | 2015-04-27 | 2015-04-27 | A kind of controllable temperature heating dish of snowflake shape surface texture |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104835766B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318304A (en) * | 2021-12-27 | 2022-04-12 | 拓荆科技股份有限公司 | Heating plate structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5748435A (en) * | 1996-12-30 | 1998-05-05 | Applied Materials, Inc. | Apparatus for controlling backside gas pressure beneath a semiconductor wafer |
| JP2001110883A (en) * | 1999-09-29 | 2001-04-20 | Applied Materials Inc | Substrate supporting device and its heat-transfer method |
| CN1992162A (en) * | 2005-12-27 | 2007-07-04 | 莎姆克株式会社 | Plasma processing method and plasma device |
| CN101243542A (en) * | 2005-08-17 | 2008-08-13 | 应用材料股份有限公司 | Substrate support having brazed plates and resistance heater |
| CN201311921Y (en) * | 2008-09-08 | 2009-09-16 | 力鼎精密股份有限公司 | Wafer carrying device |
| CN201383496Y (en) * | 2008-12-31 | 2010-01-13 | 中微半导体设备(上海)有限公司 | Static chuck |
| CN202926405U (en) * | 2011-08-16 | 2013-05-08 | 福特环球技术公司 | Annular turbo machine nozzle and turbo supercharger used for engine |
-
2015
- 2015-04-27 CN CN201510210174.5A patent/CN104835766B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5748435A (en) * | 1996-12-30 | 1998-05-05 | Applied Materials, Inc. | Apparatus for controlling backside gas pressure beneath a semiconductor wafer |
| JP2001110883A (en) * | 1999-09-29 | 2001-04-20 | Applied Materials Inc | Substrate supporting device and its heat-transfer method |
| CN101243542A (en) * | 2005-08-17 | 2008-08-13 | 应用材料股份有限公司 | Substrate support having brazed plates and resistance heater |
| CN1992162A (en) * | 2005-12-27 | 2007-07-04 | 莎姆克株式会社 | Plasma processing method and plasma device |
| CN201311921Y (en) * | 2008-09-08 | 2009-09-16 | 力鼎精密股份有限公司 | Wafer carrying device |
| CN201383496Y (en) * | 2008-12-31 | 2010-01-13 | 中微半导体设备(上海)有限公司 | Static chuck |
| CN202926405U (en) * | 2011-08-16 | 2013-05-08 | 福特环球技术公司 | Annular turbo machine nozzle and turbo supercharger used for engine |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318304A (en) * | 2021-12-27 | 2022-04-12 | 拓荆科技股份有限公司 | Heating plate structure |
| CN114318304B (en) * | 2021-12-27 | 2023-11-24 | 拓荆科技股份有限公司 | Heating plate structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104835766B (en) | 2018-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104835762A (en) | Temperature-controllable heating disc with paper-cut-shaped surface structure | |
| CN104911544B (en) | Temperature control disk | |
| CN104988472B (en) | Semiconductor coated film equipment temperature-controlling system | |
| CN104878370A (en) | Split type temperature-controllable heating disc structure | |
| US8741065B2 (en) | Substrate processing apparatus | |
| CN102870503B (en) | There are the controlled temperature plasma process chamber parts of the region dependence heat efficiency | |
| CN102645117B (en) | Microchannel cooler | |
| CN104167399A (en) | Staggered complex micro-channel miniature heat exchanger | |
| CN104658992A (en) | Novel micro heat sink provided with pin-fin array | |
| CN104835763A (en) | Temperature-controllable heating disc with petal-shaped surface structure | |
| CN104928651A (en) | Temperature-controllable heating disc for output gas of warm flow chamber | |
| CN104835761A (en) | Temperature-controllable heating disc enabling peripheral outgassing | |
| CN104835766A (en) | Temperature-controllable heating plate with snowflake-shaped surface structure | |
| CN105047543A (en) | Controllable temperature heating disc of spiral-type surface structure | |
| CN104835764A (en) | Temperature-controllable heating disc with spider-web-shaped surface structure | |
| CN203983257U (en) | Complicated microchannel micro heat exchanger misplaces | |
| CN204425879U (en) | A kind of partition type forced air cooling radiator | |
| CN113300209A (en) | Cooling heat sink and stacked array applied to high-power semiconductor light source chip | |
| CN104099613A (en) | Reaction cavity and plasma processing equipment | |
| US8925622B2 (en) | Cooling plate | |
| CN104835765A (en) | Temperature-controllable heating plate with boss surface structure arranged in polygon shape | |
| CN104928652A (en) | Temperature-controllable heating disc of circularly-distributed boss surface structure | |
| CN105689717A (en) | Manufacturing method for part with capillary-structure pipe embedded therein | |
| CN104862673A (en) | Temperature-controllable heating disc for discharging air in center | |
| CN106611733B (en) | Many imports cavity heating support frame |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province Patentee after: Tuojing Technology Co.,Ltd. Address before: 110179 3rd floor, No.1-1 Xinyuan street, Hunnan New District, Shenyang City, Liaoning Province Patentee before: PIOTECH Co.,Ltd. |