CN201311921Y

CN201311921Y - Wafer carrying device

Info

Publication number: CN201311921Y
Application number: CNU2008201300588U
Authority: CN
Inventors: 刘奎江; 陈力山; 陈英信
Original assignee: Leading Precision Inc
Current assignee: Leading Precision Inc
Priority date: 2008-09-08
Filing date: 2008-09-08
Publication date: 2009-09-16
Anticipated expiration: 2018-09-08

Abstract

The utility model relates to a wafer carrying device which is used for a wafer sputtering or etching process. Process gas is led by a half-opening type continues groove to directly heat or cool a wafer, and the process gas enters a semiconductor process chamber and is evenly distributed in the semiconductor process chamber through at least one gas leaking hole. The wafer carrying device comprises a carrying disk and a gas pipe, wherein the carrying disk comprises a continuous groove, a gas supply hole and at least one gas leaking hole, the gas pipe is connected with the gas supply hole, and the continuous groove is respectively connected with the gas supply hole and the gas leaking hole and is provided with a top surface which is connected with a wafer carried on the carrying disk.

Description

Wafer bearing device

Technical field

The utility model relates to a kind of wafer bearing device, particularly relevant for a kind of wafer bearing device that is useful in wafer sputter process chamber or crystal round etching deposition chamber.

Background technology

Generally speaking, wafer manufacture of semiconductor such as etching or deposition are carried out in the manufacture of semiconductor chamber, and wherein wafer is arranged on the load plate in the manufacture of semiconductor chamber.Existing manufacture of semiconductor chamber 10 as shown in Figure 1, comprising a vacuum chamber 11, one load plates 12, one pipelines 13, one bogeys 14, and a gas gatherer 15.Load plate 12 is arranged in the vacuum chamber 11 and is connected in bogey 14, and pipeline 13 is arranged in load plate 12 and the bogey 14, and gas gatherer 15 then is external in vacuum chamber 11.One working fluid (graphic demonstration) imports pipeline 13 in order to the cooling or the wafer of heating, and a process gas (graphic demonstration) then enters vacuum chamber 11 via gas gatherer 15 to carry out in order to processing procedure.

Wherein, pipeline 13 often must cleaning be heated or cooling effectiveness with maintenance, and plant maintenance is loaded down with trivial details.External gas gatherer 15 not only must keep being tightly connected with vacuum chamber 11, more need keep the normal operation of relevant device during processing procedure carries out, and operation of equipment all takes time and effort with maintenance.In addition, gas gatherer 15 is typically designed to single air inlet, must a period of time just reach the effect that is evenly distributed so process gas enters behind the vacuum chamber 11, require down, how shorten that to be evenly distributed required time be the deposition chamber design focal point at the high efficiency production of seizing every minute and second.As from the foregoing, provide once the wafer bearing device that has maintenance convenient for cleaning, cost economy, distribute fast in the vacuum chamber with process gas and become one of important topic of manufacture of semiconductor chamber correlation technique.

Summary of the invention

The purpose of this utility model is to overcome the deficiencies in the prior art and defective, a kind of wafer bearing device is proposed, particularly be applied to a kind of wafer bearing device of wafer sputter or etch process, wherein the continuous channel by a semi open model imports a process gas directly wafer being heated fast or to cool off, and it is indoor to make process gas enter and to be uniformly distributed in manufacture of semiconductor fast by at least one leakage port.

For reaching above-mentioned purpose, the utility model provides a kind of wafer bearing device, comprising: a load plate, and this load plate comprises a continuous channel, an air supply opening, and at least one leakage port, wherein this continuous channel is connected to this air supply opening and described leakage port; And a tracheae, be connected in this air supply opening; Wherein, when carrying a wafer on this load plate, an end face of this continuous channel is covered by this wafer.

According to the utility model, a kind of wafer bearing device is provided, comprising a load plate and a tracheae, wherein load plate comprises a continuous channel, an air supply opening and at least one leakage port.Continuous channel is connected to air supply opening and leakage port, and tracheae is connected in air supply opening.Continuous channel has an end face again, and this end face face is connected to a wafer that carries on the load plate.

The utlity model has following useful technique effect: the utility model imports a process gas directly wafer heated fast or to cool off by the continuous channel of a semi open model, and it is indoor to make process gas enter and to be uniformly distributed in manufacture of semiconductor fast by at least one leakage port, the economy of can convenient for cleaningly maintaining, reduce cost.

Description of drawings

Fig. 1 is the schematic diagram of existing manufacture of semiconductor chamber;

Fig. 2 is according to a preferred embodiment of the present utility model, a kind of generalized section of wafer bearing device;

Fig. 3 is according to a preferred embodiment of the present utility model, a kind of schematic perspective view of wafer bearing device.

Symbol description among the figure

Existing manufacture of semiconductor chambers 10;

11 vacuum chambers;

12 load plates;

13 pipelines;

14 bogeys;

15 gas gatherers;

20 wafer bearing devices;

21 load plates;

211 air supply openings;

212 continuous channels;

2121 end faces;

213 leakage ports;

22 tracheaes;

23 wafers;

Manufacture of semiconductor chambers 24;

25 continuous air supply systems.

Embodiment

Below with specific embodiment, each form content that the utility model is disclosed is described in detail.

With reference to Fig. 2, Fig. 2 is the generalized section according to a kind of wafer bearing device 20 provided by the utility model, comprises a load plate 21 and a tracheae 22, and wherein load plate 21 comprises an air supply opening 211, a continuous channel 212 and at least one leakage port 213.Continuous channel 212 is connected to air supply opening 211 and leakage port 213, and tracheae is connected in air supply opening 211.Continuous channel 212 is the groove of a semi open model, continuous channel 212 has an end face 2121 again, the wafer 23 that these end face 2121 faces are connected to carrying on the load plate 21 makes continuous channel 212 become an enclosed groove, and tracheae 22, air supply opening 211, continuous channel 212 and leakage port 213 are connected to form a continuous air supply system 25 in regular turn.Wherein, wafer bearing device 20 is arranged in the semiconductor deposition chamber 24, and a process gas (graphic demonstration) from bottom to top enters manufacture of semiconductor chamber 24 via continuous air supply system 25.

With reference to Fig. 2,3, continuous channel 212 is the design of a semi open model and continuous multi ring-type, and it is shown that the number of turns of this continuous multi ring-type is not subject to Fig. 3, and the implementer can increase or reduce the number of turns of how much ring-types on demand.Wherein, the process gas of importing is that heat conduction is contacted with wafer 23, so process gas can directly heat or cools off wafer 23.Again, leakage port 213 is for equidistantly being arranged at a side (icon does not show) of load plate 21, and process gas can enter fast and be uniformly distributed in the manufacture of semiconductor chamber 24 via leakage port 213.Wherein, process gas can be according to the required selection argon gas of processing procedure, nitrogen, oxygen or other gas.In addition,, can prevent wafer 23 displacements on the load plate 21, carry out in order to avoid influence processing procedure via the flow and the force value of process gas in the control continuous channel 212.

Again, manufacture of semiconductor chamber 24 can be a cvd reactive chamber or an etching reaction chamber, and load plate 21 can be a stainless steel or an aluminium alloy is made.Wherein, stainless steel can be selected the SUS304 stainless steel, and aluminium alloy can select to comprise the AL6061-T6 aluminium alloy of surperficial anode treatment.

Though the utility model discloses as above with preferred embodiment, right its is not in order to limit the utility model, any those skilled in the art are not in breaking away from spirit and scope of the present utility model, when doing a little change and retouching, for example increase the screw fixing hole on the wafer bearing device or increase wafer ejector pin etc.Therefore protection range of the present utility model when with claims the person of being defined be as the criterion.

Claims

1. a wafer bearing device is characterized in that, comprising:

One load plate, this load plate comprises a continuous channel, an air supply opening, and at least one leakage port, wherein this continuous channel is connected to this air supply opening and described leakage port; And

One tracheae is connected in this air supply opening;

Wherein, when carrying a wafer on this load plate, an end face of this continuous channel is covered by this wafer.

2. wafer bearing device as claimed in claim 1 is characterized in that, this tracheae, and this air supply opening, this continuous channel, and described leakage port connects into a connectivity structure, formation one continuous air supply system in regular turn.

3. wafer bearing device as claimed in claim 2 is characterized in that, described leakage port equidistantly is arranged at a side of this load plate, so that process gas is distributed in the semiconductor deposition chamber.

4. wafer bearing device as claimed in claim 3 is characterized in that, this process gas is an argon gas, nitrogen, or oxygen.

5. wafer bearing device as claimed in claim 4 is characterized in that, this process gas heat conduction is contacted with this wafer, to heat or to cool off this wafer.

6. wafer bearing device as claimed in claim 3 is characterized in that, this manufacture of semiconductor chamber is a cvd reactive chamber or an etching reaction chamber.

7. wafer bearing device as claimed in claim 1 is characterized in that, this load plate is a stainless steel load plate or an aluminium alloy load plate.

8. wafer bearing device as claimed in claim 7 is characterized in that, this stainless steel is the SUS304 stainless steel.

9. wafer bearing device as claimed in claim 7 is characterized in that, this aluminium alloy is the AL6061-T6 aluminium alloy that comprises surperficial anode treatment.

10. wafer bearing device as claimed in claim 1 is characterized in that this continuous channel has the geometry of a continuous annular.