CN104929896A - Cold pump and semiconductor processing equipment - Google Patents
Cold pump and semiconductor processing equipment Download PDFInfo
- Publication number
- CN104929896A CN104929896A CN201410108669.2A CN201410108669A CN104929896A CN 104929896 A CN104929896 A CN 104929896A CN 201410108669 A CN201410108669 A CN 201410108669A CN 104929896 A CN104929896 A CN 104929896A
- Authority
- CN
- China
- Prior art keywords
- cold
- cold pump
- pump
- pinboard
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
Abstract
The invention provides a cold pump and semiconductor processing equipment. The cold pump comprises a pump body and an adapter plate which is located between a reaction cavity and the pump body and fixedly connected with the reaction cavity and the pump body. A through hole is formed in the adapter plate and communicated with an exhaust port of the reaction cavity and an air inlet of the pump body. A cooling channel is arranged inside the adapter plate, and cold media are led into the cooling channel to cool the adapter plate. The cold pump is advantageous in that, the problem that the temperature of a cold plate rises in the low temperature and high temperature processes and in the cavity baking process can be solved, so that the regeneration frequency of the cold pump can be reduced, and normal work of the cold pump is ensured.
Description
Technical field
The present invention relates to semiconductor processing technology field, particularly, relate to a kind of cold pump and semiconductor processing equipment.
Background technique
Semiconductor processing equipment has strict requirement to the degree of vacuum of reaction chamber usually.Such as, for Pvd equipment (Physical Vapor Deposition, PVD), it requires that the degree of vacuum of reaction chamber reaches 10
-8torr.Usually, need to vacuumize reaction chamber by cold pump (Cryo-pump).
Cold pump is the principle utilizing condensation, is reached the object of the degree of vacuum promoting reaction chamber by the specific gas in adsorption reaction chamber.Fig. 1 is existing cold pump structure schematic diagram.As shown in Figure 1, cold pump is arranged on the bottom of reaction chamber 14, and is positioned at the position corresponding with the relief opening of reaction chamber 14.This cold pump comprises the pump housing 10, one-level cold drawing 11 and secondary cold plate 12.Wherein, one-level cold drawing 1 is arranged on the top in the pump housing 10, its in working order under temperature generally at 100 ~ 120K, the water vapor that the relief opening for condensation autoreaction chamber 14 is discharged; Secondary cold plate 12 is arranged in the pump housing 10, and be positioned at the below of one-level cold drawing 1, its in working order under temperature generally at 10 ~ 20K, nitrogen, argon gas and oxygen that the relief opening being mainly used in condensation autoreaction chamber 14 is discharged, and, secondary cold plate 12 is also provided with active carbon, for adsorbed hydrogen, helium and neon.In the process that cold pump vacuumizes reaction chamber 14, the gas molecule of the relief opening discharge of autoreaction chamber 14 is when touching the enough low cold drawing of temperature and being surperficial, to be condensed and under the state remaining on low vapor pressure, thus can effectively stop the gas of discharge to return reaction chamber 14, and then high vacuum state can be in by realization response chamber.
In addition, because the temperature of cold drawing can raise gradually along with the accumulation of process time, this not only causes the pumping speed of cold pump to reduce, and a large amount of solid waters, argon, nitrogen and the oxygen etc. be gathered on cold drawing are understood the rising of Yin Wendu and return in reaction chamber, thus the whole efficiency of cold pump is declined, or need to carry out cold pump regeneration.For this reason, conventional a kind of way is: in reaction chamber, and the position be positioned at above relief opening is provided with baffle plate 13, as shown in Figure 2, baffle plate 13 is for stopping light source in reaction chamber or the direct radiation cold plate of reflected light, thus the problem of the cold drawing intensification occurred in manufacturing process can be to some extent solved, and then the frequency of cold pump regeneration can be reduced.
But above-mentioned way only can meet the requirement of low temperature process (less than 300 DEG C), and cannot meet the requirement of high-temperature technology (more than 300 DEG C), and it mainly there will be following two problems:
One, for high-temperature technology, cold pump still there will be cold drawing intensification problem, causes cold pump to regenerate frequent, thus reduces process efficiency.
They are two years old, in the process of carrying out technique, need to carry out chamber baking (Bakeout), namely, by closing chamber cooling water, the temperature of chamber wall is raised, thus the moisture on the technique component wall in chamber wall, chamber and the water vapor in chamber are departed under the high temperature conditions, and taken away by cold pump.Therefore, when carrying out chamber baking, the heat from chamber wall can be passed to cold pump, and it is too fast that this can cause one-level, secondary cold plate to heat up equally, causes cold pump to regenerate frequent, thus reduces process efficiency.
Summary of the invention
The present invention is intended at least to solve one of technical problem existed in prior art, propose a kind of cold pump and semiconductor processing equipment, it can solve the cold drawing intensification problem occurred in the process of low temperature, high-temperature technology and chamber baking, thus the frequency of cold pump regeneration can be reduced, ensure that cold pump normally works.
A kind of cold pump is provided for realizing object of the present invention, for vacuumizing reaction chamber, it comprises the pump housing and pinboard, described pinboard is between described reaction chamber and the described pump housing, and be fixedly connected with the two respectively, and be provided with through hole on described pinboard, described through hole is connected with the suction port of the described pump housing with the relief opening of described reaction chamber respectively; Further, in described pinboard, being also provided with cooling channel, by passing into coolant media in described cooling channel, described pinboard being cooled.
Preferably, described cooling channel comprises the annular pass arranged around described through hole.
Preferably, the internal diameter of described annular pass is not less than the air inlet diameter of the described pump housing.
Preferably, the span of the internal diameter of described annular pass is at 198 ~ 300mm.
Preferably, the internal diameter of described annular pass is 210mm.
Preferably, the span of the thickness of described pinboard is at 15 ~ 50mm.
Preferably, the thickness of described pinboard is 30mm.
Preferably, the diameter of the cross section of described annular pass is 6.25mm or 9.53mm.
Preferably, described coolant media comprises cooling water, and the flow velocity of described cooling water in described cooling channel is greater than 3L/min.
As another technological scheme, the present invention also provides a kind of semiconductor processing equipment, and it comprises reaction chamber and the cold pump for vacuumizing described reaction chamber, and described cold pump have employed above-mentioned cold pump provided by the invention.
The present invention has following beneficial effect:
Cold pump provided by the invention, it is provided with the pinboard be fixedly connected with the two respectively between reaction chamber with the pump housing, and is provided with cooling channel in this pinboard.In the process of carrying out the baking of low temperature, high-temperature technology and chamber, by passing into coolant media in this cooling channel, pinboard is cooled, can cool the heat that reaction chamber transmits towards cold pump, thus can prevent one-level in cold pump, secondary cold plate temperature from raising, and then the frequency of cold pump regeneration can be reduced, ensure that cold pump normally works, thus can process efficiency be improved.
Semiconductor processing equipment provided by the invention, it is by adopting cold pump provided by the invention, the cold drawing intensification problem occurred in the process of low temperature, high-temperature technology and chamber baking can be solved, thus the frequency of cold pump regeneration can be reduced, ensure that cold pump normally works, and then can process efficiency be improved.
Accompanying drawing explanation
Fig. 1 is existing cold pump structure schematic diagram;
Fig. 2 is the plan view of baffle plate;
The partial sectional view of the cold pump that Fig. 3 A provides for the embodiment of the present invention;
Fig. 3 B is the sectional view along A-A line in Fig. 3 A;
The sectional view of the pinboard of the cold pump that Fig. 4 provides for the embodiment of the present invention; And
The partial sectional view of the cold pump of another kind that Fig. 5 provides for the embodiment of the present invention.
Embodiment
For making those skilled in the art understand technological scheme of the present invention better, below in conjunction with accompanying drawing, cold pump provided by the invention and semiconductor processing equipment are described in detail.
The partial sectional view of the cold pump that Fig. 3 A provides for the embodiment of the present invention.Fig. 3 B is the sectional view along A-A line in Fig. 3 A.See also Fig. 3 A and Fig. 3 B, cold pump 3 is for vacuumizing reaction chamber 2, and cold pump 3 comprises the pump housing 31 and pinboard 32, and wherein, pinboard 32 between reaction chamber 2 and the pump housing 31, and is fixedly connected with the two respectively.In the present embodiment, the pump housing 31, pinboard 32 and reaction chamber 2 mode with bolts links together, and as shown in Figure 3A, adopts stainless steel bolt 4 pump housing 31, pinboard 32 to be fixed on the bottom of reaction chamber 2.
Below the 26S Proteasome Structure and Function of pinboard 32 is described in detail.Particularly, pinboard 32 is provided with through hole 321, through hole 321 is connected with the suction port 311 of the pump housing 31 with the relief opening 21 of reaction chamber 2 respectively.In the process using cold pump 3 pairs of reaction chambers 2 to vacuumize, gas (comprising water vapor and various gas molecule) in reaction chamber 2 enters in the pump housing 31 via relief opening 21, through hole 321 and suction port 311 successively, wherein, water vapor is attached on one-level cold drawing 33; Nitrogen, argon gas and oxygen etc. are attached in secondary cold plate 34, and in secondary cold plate 34, be also provided with active carbon (not shown), for adsorbed hydrogen, helium and neon etc., thus realize improving the degree of vacuum in reaction chamber 2.
In actual applications, the material that pinboard adopts can comprise the metallic material of the good heat conductivity of such as stainless steel or copper etc.And preferred, the span of the thickness B of pinboard 32 is at 15 ~ 50mm; Preferred further, be 30mm.In addition, the diameter d 1 of through hole 321 can according to the diameter free setting of the relief opening 21 of suction port 311 diameter of the pump housing 31 and reaction chamber 2.
And, cooling channel 322 is also provided with in pinboard 32, by passing into coolant media in cooling channel 322, pinboard 32 is cooled, this is in the process of carrying out the baking of low temperature, high-temperature technology and chamber, can cool the heat that reaction chamber 2 transmits towards cold pump 3, thus can prevent the one-level cold drawing 33 in cold pump 3 and secondary cold plate 34 temperature from raising, and then the frequency of cold pump regeneration can be reduced, ensure the normal work of cold pump 3, thus can process efficiency be improved.
In the present embodiment, cooling channel 322 is the annular pass arranged around through hole 321, as shown in Figure 3 B.Further, being also provided with in cooling channel 322 can for the entrance 324 of coolant media turnover and outlet 325.Preferably, as shown in Figure 4, the internal diameter D of annular pass is not less than suction port 311 diameter of the pump housing 31, with the top enabling annular pass be positioned at the pump housing 31, thus more effectively can play the effect of the cooling pump housing 31.Preferably, the internal diameter D of annular pass span 198 ~ 300mm(pump housing 31 suction port 311 typically have a diameter from 198mm).Preferred further, the internal diameter D of annular pass can be 210mm.
In the present embodiment, the shape of cross section of annular pass is circular, and as shown in Figure 4, and the diameter d 2 of the cross section of annular pass can be 6.25mm or 9.53mm.Certainly, in actual applications, the cross section of annular pass also can be other arbitrary shapes of triangle, polygonal or ellipse etc., and the diameter of the cross section of annular pass can design according to different shape of cross sections.
In actual applications, coolant media can be cooling water or cooled gas etc.Wherein, when adopting cooling water as coolant media, preferably, the flow velocity of cooling water in cooling channel 322 is greater than 3L/min.
Preferably, the partial sectional view of the cold pump of another kind that provides for the embodiment of the present invention of Fig. 5.As shown in Figure 5,
It should be noted that, in reaction chamber 2, and the position be positioned at above relief opening 21 is provided with baffle plate 35, baffle plate 35 is for stopping light source in reaction chamber 2 or the direct radiation cold plate of reflected light, thus can prevent one-level in cold pump, secondary cold plate temperature from raising further, and then the frequency of cold pump regeneration can be reduced.
Also it should be noted that, in actual applications, annular pass can be the arbitrary shape of annulus, Fang Huan, three square rings or irregular annular etc.In addition, cooling channel also can adopt other arbitrary structures except annular pass, as long as it can cool pinboard.
It should be noted that further, in actual applications, pinboard can be circular, triangle or square etc. arbitrary shape, and the size of pinboard can design adaptively according to the size of the suction port of the different pump housing.
As another technological scheme, the embodiment of the present invention also provides a kind of semiconductor processing equipment, and it comprises reaction chamber and the cold pump for vacuumizing this reaction chamber, and this cold pump have employed the above-mentioned cold pump that the embodiment of the present invention provides.
The semiconductor processing equipment that the embodiment of the present invention provides, its cold pump provided by adopting the embodiment of the present invention, the cold drawing intensification problem occurred in the process of low temperature, high-temperature technology and chamber baking can be solved, thus the frequency of cold pump regeneration can be reduced, ensure that cold pump normally works, and then can process efficiency be improved.
Be understandable that, the illustrative embodiments that above mode of execution is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a cold pump, for vacuumizing reaction chamber, it is characterized in that, comprise the pump housing and pinboard, described pinboard is between described reaction chamber and the described pump housing, and be fixedly connected with the two respectively, and through hole is provided with on described pinboard, described through hole is connected with the suction port of the described pump housing with the relief opening of described reaction chamber respectively; Further,
In described pinboard, being also provided with cooling channel, by passing into coolant media in described cooling channel, described pinboard being cooled.
2. cold pump according to claim 1, is characterized in that, described cooling channel comprises the annular pass arranged around described through hole.
3. cold pump according to claim 2, is characterized in that, the internal diameter of described annular pass is not less than the air inlet diameter of the described pump housing.
4. the cold pump according to Claims 2 or 3, is characterized in that, the span of the internal diameter of described annular pass is at 198 ~ 300mm.
5. cold pump according to claim 4, is characterized in that, the internal diameter of described annular pass is 210mm.
6. cold pump according to claim 1, is characterized in that, the span of the thickness of described pinboard is at 15 ~ 50mm.
7. cold pump according to claim 6, is characterized in that, the thickness of described pinboard is 30mm.
8. cold pump according to claim 2, is characterized in that, the shape of cross section of described annular pass is circular, and the diameter of the described cross section of circle is 6.25mm or 9.53mm.
9. cold pump according to claim 1, is characterized in that, described coolant media comprises cooling water,
The flow velocity of described cooling water in described cooling channel is greater than 3L/min.
10. a semiconductor processing equipment, it comprises reaction chamber and the cold pump for vacuumizing described reaction chamber, it is characterized in that, described cold pump have employed the cold pump described in claim 1-9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410108669.2A CN104929896B (en) | 2014-03-21 | 2014-03-21 | Cold pump and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410108669.2A CN104929896B (en) | 2014-03-21 | 2014-03-21 | Cold pump and semiconductor processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104929896A true CN104929896A (en) | 2015-09-23 |
| CN104929896B CN104929896B (en) | 2017-07-21 |
Family
ID=54117248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410108669.2A Active CN104929896B (en) | 2014-03-21 | 2014-03-21 | Cold pump and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104929896B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108050043A (en) * | 2018-01-04 | 2018-05-18 | 湘潭大学 | A kind of vacuum extractor, pumped vacuum systems and its vacuum pumping method |
| CN110173411A (en) * | 2019-06-21 | 2019-08-27 | 北京北方华创微电子装备有限公司 | Cold pump closure and reaction chamber |
| CN113046716A (en) * | 2021-03-08 | 2021-06-29 | 北京北方华创微电子装备有限公司 | Cold pump vacuum control device, control method and system thereof and semiconductor processing equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0558495B1 (en) * | 1990-11-19 | 1994-04-20 | Leybold Aktiengesellschaft | Process for regenerating a cryopump and suitable cryopump for implementing this process |
| US6122921A (en) * | 1999-01-19 | 2000-09-26 | Applied Materials, Inc. | Shield to prevent cryopump charcoal array from shedding during cryo-regeneration |
| CN102734123A (en) * | 2011-04-11 | 2012-10-17 | 住友重机械工业株式会社 | Cryopump system, compressor, and method for regenerating cryopumps |
-
2014
- 2014-03-21 CN CN201410108669.2A patent/CN104929896B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0558495B1 (en) * | 1990-11-19 | 1994-04-20 | Leybold Aktiengesellschaft | Process for regenerating a cryopump and suitable cryopump for implementing this process |
| US6122921A (en) * | 1999-01-19 | 2000-09-26 | Applied Materials, Inc. | Shield to prevent cryopump charcoal array from shedding during cryo-regeneration |
| CN102734123A (en) * | 2011-04-11 | 2012-10-17 | 住友重机械工业株式会社 | Cryopump system, compressor, and method for regenerating cryopumps |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108050043A (en) * | 2018-01-04 | 2018-05-18 | 湘潭大学 | A kind of vacuum extractor, pumped vacuum systems and its vacuum pumping method |
| CN110173411A (en) * | 2019-06-21 | 2019-08-27 | 北京北方华创微电子装备有限公司 | Cold pump closure and reaction chamber |
| CN113046716A (en) * | 2021-03-08 | 2021-06-29 | 北京北方华创微电子装备有限公司 | Cold pump vacuum control device, control method and system thereof and semiconductor processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104929896B (en) | 2017-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104929896A (en) | Cold pump and semiconductor processing equipment | |
| US9032741B2 (en) | Cryopump and vacuum pumping method | |
| CN105275836A (en) | Turbo-molecular pump | |
| US20110225989A1 (en) | Cold trap and vacuum evacuation apparatus | |
| CN105474373A (en) | Sealing groove methods for semiconductor equipment | |
| CN104952762A (en) | Cooling chamber and semiconductor processing equipment | |
| CN201311921Y (en) | Wafer carrying device | |
| WO2011141725A3 (en) | Vacuum pumping system | |
| CN102743894A (en) | Cold trap and vacuum exhaust device | |
| WO2020078147A1 (en) | Chamber sealing assembly and growth furnace | |
| CN104947039A (en) | Thermal baffle and reaction chamber | |
| CN101431003A (en) | Exhaustion ring and plasma processing device | |
| CN203238309U (en) | Oil removing and recycling device for bell-type furnace vacuum-pumping system | |
| CN103090600B (en) | Delicatessen vacuum precooling machine twin-stage water vessel and catch water method | |
| CN214743935U (en) | Vacuum furnace cooler sealing device | |
| KR101253117B1 (en) | Multi-stage screw vacuum-pump | |
| CN216320942U (en) | Be used for CVD coating waste gas rapid cooling condensation trap | |
| JP6473332B2 (en) | Segmented antenna assembly and plasma generator | |
| CN106609695A (en) | Automobile radiator | |
| CN218155006U (en) | Dustproof structure of high-temperature vacuum system | |
| KR100759105B1 (en) | High vacuum apparatus using refrigerant | |
| CN2737805Y (en) | Ion-nitriding furnace | |
| CN213711958U (en) | Pneumatic pipe clamp valve | |
| CN219197593U (en) | Exhaust device of vacuum pump of semiconductor factory building | |
| CN202326256U (en) | Water-cooling structure for vacuum pump |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| CP01 | Change in the name or title of a patent holder |