CN104929896B - Cold pump and semiconductor processing equipment - Google Patents
Cold pump and semiconductor processing equipment Download PDFInfo
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- CN104929896B CN104929896B CN201410108669.2A CN201410108669A CN104929896B CN 104929896 B CN104929896 B CN 104929896B CN 201410108669 A CN201410108669 A CN 201410108669A CN 104929896 B CN104929896 B CN 104929896B
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- cold
- cold pump
- pinboard
- pump
- reaction chamber
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Abstract
Cold pump and semiconductor processing equipment that the present invention is provided, it includes the pump housing and pinboard, and the pinboard is located between reaction chamber and the pump housing, and is fixedly connected respectively with the two, and through hole is provided with pinboard, the through hole is connected with the exhaust outlet of reaction chamber and the air inlet of the pump housing respectively;Also, cooling duct is additionally provided with pinboard, pinboard is cooled down by being passed through coolant media into the cooling duct.The cold pump that the present invention is provided, it can solve the cold drawing heating problem occurred during low temperature, high-temperature technology and chamber baking, so as to reduce the frequency of cold pump regeneration, it is ensured that cold pump normal work.
Description
Technical field
The present invention relates to semiconductor processing technology field, in particular it relates to a kind of cold pump and semiconductor processing equipment.
Background technology
Semiconductor processing equipment generally has strict requirements to the vacuum of reaction chamber.For example, heavy for physical vapor
Product equipment (Physical Vapor Deposition, PVD), it requires that the vacuum of reaction chamber reaches 10-8Torr.Generally,
Need to vacuumize reaction chamber by cold pump (Cryo-pump).
Cold pump is the principle using condensation, and lifting reaction chamber is reached by the specific gas in adsorption reaction chamber
The purpose of vacuum.Fig. 1 is the structural representation of existing cold pump.As shown in figure 1, cold pump is arranged on the bottom of reaction chamber 14
Portion, and at the position corresponding with the exhaust outlet of reaction chamber 14.The cold pump includes the pump housing 10, one-level cold drawing 11 and two grades
Cold drawing 12.Wherein, one-level cold drawing 11 is arranged on the top in the pump housing 10, its temperature in the operating condition it is general 100~
120K, for condensing the water vapour that the exhaust outlet of autoreaction chamber 14 is discharged;Secondary cold plate 12 is arranged in the pump housing 10, and is located at
The lower section of one-level cold drawing 1, its temperature in the operating condition is general in 10~20K, is mainly used in condensing autoreaction chamber 14
Nitrogen, argon gas and the oxygen of exhaust outlet discharge, also, activated carbon is additionally provided with secondary cold plate 12, for adsorbed hydrogen, helium
Gas and neon.During cold pump is vacuumized to reaction chamber 14, the gas of the exhaust outlet discharge of autoreaction chamber 14
Molecule can be condensed and be maintained under the state of low vapor pressure when touching the sufficiently low cold drawing surface of temperature, so that
It can effectively prevent the gas of discharge from returning to reaction chamber 14, and then can realize that reaction chamber is in high vacuum state.
Further, since the temperature of cold drawing can gradually rise with the accumulation of process time, this does not only result in the pumping of cold pump
Speed is reduced, and be gathered in a large amount of solid waters, argon, nitrogen and oxygen on cold drawing etc. can reaction be returned to because of the rise of temperature
In chamber, so that the whole efficiency of cold pump declines, or need to carry out cold pump regeneration.Therefore, a kind of conventional way is:
In reaction chamber, and baffle plate 13 is provided with positioned at the position above exhaust outlet, as shown in Fig. 2 baffle plate 13 is used to stop
The direct radiation cold plate of light source or reflected light in reaction chamber, so as to solve in technical process to a certain extent
The problem of existing cold drawing heats up, and then the frequency of cold pump regeneration can be reduced.
However, above-mentioned way is only capable of meeting the requirement of low temperature process (less than 300 DEG C), and high-temperature technology (300 can not be met
More than DEG C) requirement, following two problems mainly occur in it:
First, for high-temperature technology, cold drawing heating problem still occurs in cold pump, cause cold pump regeneration frequent, so as to drop
Low process efficiency.
Second, it is necessary to carry out chamber baking (Bakeout) during technique is carried out, i.e. cooled down by closing chamber
Water raises the temperature of chamber wall, so that the moisture on the technique component wall in chamber wall, chamber and the water in chamber steam
Vapour departs under the high temperature conditions, and is walked by cold pumping.Therefore, when carrying out chamber baking, the heat from chamber wall can be transmitted
To cold pump, it is too fast that this also results in one-level, secondary cold plate heating, causes cold pump regeneration frequent, so as to reduce process efficiency.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, it is proposed that a kind of cold pump and partly lead
Body process equipment, it can solve the cold drawing heating problem occurred during low temperature, high-temperature technology and chamber baking, so that
The frequency of cold pump regeneration can be reduced, it is ensured that cold pump normal work.
To realize that the purpose of the present invention provides a kind of cold pump, for being vacuumized to reaction chamber, it includes the pump housing
And pinboard, the pinboard is located between the reaction chamber and the pump housing, and is fixedly connected respectively with the two, and
Through hole, the exhaust outlet and the air inlet phase of the pump housing of the through hole respectively with the reaction chamber are provided with the pinboard
Connection;Also, cooling duct is additionally provided with the pinboard, by being passed through coolant media into the cooling duct to institute
Pinboard is stated to be cooled down.
It is preferred that, the cooling duct includes the circular passage set around the through hole.
It is preferred that, the internal diameter of the circular passage is not less than the air inlet diameter of the pump housing.
It is preferred that, the span of the internal diameter of the circular passage is in 198~300mm.
It is preferred that, the internal diameter of the circular passage is 210mm.
It is preferred that, the span of the thickness of the pinboard is in 15~50mm.
It is preferred that, the thickness of the pinboard is 30mm.
It is preferred that, a diameter of 6.25mm or 9.53mm of the cross section of the circular passage.
It is preferred that, the coolant media includes cooling water, and flow velocity of the cooling water in the cooling duct is more than 3L/
min。
As another technical scheme, the present invention also provides a kind of semiconductor processing equipment, and it includes reaction chamber and use
In the cold pump vacuumized to the reaction chamber, the cold pump employs the above-mentioned cold pump that the present invention is provided.
The invention has the advantages that:
The cold pump that the present invention is provided, it is provided with the switching being fixedly connected respectively with the two between reaction chamber and the pump housing
Plate, and it is provided with cooling duct in the pinboard.During low temperature, high-temperature technology and chamber baking is carried out, lead to
Cross and be passed through coolant media into the cooling duct pinboard is cooled down, can cool down and come what reaction chamber was transmitted towards cold pump
Heat, so as to prevent one-level, secondary cold plate temperature in cold pump from raising, and then can reduce the frequency of cold pump regeneration, protect
Cold pump normal work is demonstrate,proved, so as to improve process efficiency.
The semiconductor processing equipment that the present invention is provided, its cold pump provided by using the present invention can solve low temperature, height
The cold drawing heating problem occurred during warm technique and chamber baking, so as to reduce the frequency of cold pump regeneration, it is ensured that
Cold pump normal work, and then process efficiency can be improved.
Brief description of the drawings
Fig. 1 is the structural representation of existing cold pump;
Fig. 2 is the top view of baffle plate;
Fig. 3 A are the partial sectional view of cold pump provided in an embodiment of the present invention;
Fig. 3 B are the sectional view of the line A-A along along Fig. 3 A;
Fig. 4 is the sectional view of the pinboard of cold pump provided in an embodiment of the present invention;And
Fig. 5 is the partial sectional view of another cold pump provided in an embodiment of the present invention.
Embodiment
To make those skilled in the art more fully understand technical scheme, come below in conjunction with the accompanying drawings to the present invention
The cold pump and semiconductor processing equipment provided is described in detail.
Fig. 3 A are the partial sectional view of cold pump provided in an embodiment of the present invention.Fig. 3 B are the sectional view of the line A-A along along Fig. 3 A.
Also referring to Fig. 3 A and Fig. 3 B, cold pump 3 is used to vacuumize reaction chamber 2, and cold pump 3 includes the pump housing 31 and pinboard
32, wherein, pinboard 32 is located between reaction chamber 2 and the pump housing 31, and is fixedly connected respectively with the two.In the present embodiment,
The mode that the pump housing 31, pinboard 32 and reaction chamber 2 are connected by screw bolts links together, as shown in Figure 3A, using stainless steel
The pump housing 31, pinboard 32 are fixed on the bottom of reaction chamber 2 by bolt 4.
The 26S Proteasome Structure and Function of pinboard 32 is described in detail below.Specifically, it is provided with through hole on pinboard 32
321, through hole 321 is connected with the exhaust outlet 21 of reaction chamber 2 and the air inlet 311 of the pump housing 31 respectively.Anti- using cold 3 pairs of pump
Answer during chamber 2 vacuumized, the gas (including water vapour and various gas molecules) in reaction chamber 2 successively via
Exhaust outlet 21, through hole 321 and air inlet 311 enter in the pump housing 31, wherein, water vapour is attached on one-level cold drawing 33;Nitrogen, argon
Gas and oxygen etc. are attached in secondary cold plate 34, and are additionally provided with activated carbon (not shown) in secondary cold plate 34, are used
In adsorbed hydrogen, helium and neon etc., so as to realize the vacuum improved in reaction chamber 2.
In actual applications, the material that pinboard is used can include the good heat conductivity of stainless steel or copper etc.
Metal material.And it is preferred that, the thickness B of pinboard 32 span is in 15~50mm;It is further preferred that being
30mm.In addition, the diameter d1 of through hole 321 can be according to the diameter of air inlet 311 and the exhaust outlet 21 of reaction chamber 2 of the pump housing 31
Diameter freely set.
Moreover, cooling duct 322 is additionally provided with pinboard 32, by being passed through coolant media into cooling duct 322
Pinboard 32 is cooled down, this can cool down during low temperature, high-temperature technology and chamber baking is carried out and carry out reaction chamber
The heat that room 2 is transmitted towards cold pump 3, so as to prevent the one-level cold drawing 33 in cold pump 3 and the rise of the temperature of secondary cold plate 34, enters
And the frequency of cold pump regeneration can be reduced, it is ensured that and the normal work of cold pump 3, so as to improve process efficiency.
In the present embodiment, cooling duct 322 is the circular passage set around through hole 321, as shown in Figure 3 B.Also,
The entrance 324 for being available for coolant media to pass in and out and outlet 325 are additionally provided with cooling duct 322.It is preferred that, as shown in figure 4, ring
The internal diameter D of shape passage is not less than the diameter of air inlet 311 of the pump housing 31, so that circular passage can be located at the top of the pump housing 31, from
And can more effectively play a part of cooling down the pump housing 31.It is preferred that, the internal diameter D of circular passage span 198~
300mm (diameter of the air inlet 311 of the pump housing 31 is usually 198mm).It is further preferred that the internal diameter D of circular passage can be
210mm。
In the present embodiment, the shape of cross section of circular passage for circle, as shown in figure 4, and circular passage it is transversal
The diameter d2 in face can be 6.25mm or 9.53mm.Certainly, in actual applications, the cross section of circular passage can also be three
The other arbitrary shapes of angular, polygon or ellipse etc., and the diameter of the cross section of circular passage can be according to different
Shape of cross section is designed.
In actual applications, coolant media can be cooling water or cooling gas etc..Wherein, make when using cooling water
During for coolant media, it is preferred that flow velocity of the cooling water in cooling duct 322 is more than 3L/min.
It is preferred that, Fig. 5 is the partial sectional view of another cold pump provided in an embodiment of the present invention.As shown in figure 5,
It should be noted that being provided with baffle plate in reaction chamber 2, and at the position close to the top of exhaust outlet 21
35, baffle plate 35 is used to stop the direct radiation cold plate of light source or reflected light in reaction chamber 2, so as to further prevent cold
One-level, the rise of secondary cold plate temperature in pump, and then the frequency of cold pump regeneration can be reduced.
It should also be noted that, in actual applications, circular passage can be annulus, Fang Huan, three square rings or irregular
The arbitrary shape of annular etc..In addition, cooling duct can also be using other arbitrary structures in addition to circular passage, as long as its energy
Enough cool down pinboard.
Explanation is needed further exist for, in actual applications, pinboard for circular, triangle or square etc. can appoint
Anticipate shape, and the size of pinboard can adaptively design according to the size of the air inlet of the different pump housings.
As another technical scheme, the embodiment of the present invention also provides a kind of semiconductor processing equipment, and it includes reaction chamber
Room and the cold pump for being vacuumized to the reaction chamber, the cold pump employ above-mentioned cold pump provided in an embodiment of the present invention.
Semiconductor processing equipment provided in an embodiment of the present invention, it, can by using cold pump provided in an embodiment of the present invention
The cold drawing heating problem occurred during to solve low temperature, high-temperature technology and chamber baking, so as to reduce cold pump again
Raw frequency, it is ensured that cold pump normal work, and then process efficiency can be improved.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of cold pump, for being vacuumized to reaction chamber, it is characterised in that including the pump housing and pinboard, the switching
Plate is located between the reaction chamber and the pump housing, and is fixedly connected respectively with the two, and is set on the pinboard
There is through hole, the through hole is connected with the exhaust outlet of the reaction chamber and the air inlet of the pump housing respectively;Also,
Cooling duct is additionally provided with the pinboard, by being passed through coolant media into the cooling duct to the switching
Plate is cooled down.
2. cold pump according to claim 1, it is characterised in that the cooling duct includes the ring set around the through hole
Shape passage.
3. cold pump according to claim 2, it is characterised in that the internal diameter of the circular passage enters not less than the pump housing
Gas port diameter.
4. the cold pump according to Claims 2 or 3, it is characterised in that the span of the internal diameter of the circular passage is 198
~300mm.
5. cold pump according to claim 4, it is characterised in that the internal diameter of the circular passage is 210mm.
6. cold pump according to claim 1, it is characterised in that the span of the thickness of the pinboard 15~
50mm。
7. cold pump according to claim 6, it is characterised in that the thickness of the pinboard is 30mm.
8. cold pump according to claim 2, it is characterised in that the shape of cross section of the circular passage is circular, and round
The a diameter of 6.25mm or 9.53mm of the cross section of shape.
9. cold pump according to claim 1, it is characterised in that the coolant media includes cooling water,
Flow velocity of the cooling water in the cooling duct is more than 3L/min.
10. a kind of semiconductor processing equipment, it includes reaction chamber and the cold pump for being vacuumized to the reaction chamber,
Characterized in that, the cold pump employs the cold pump described in claim 1-9 any one.
Priority Applications (1)
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CN201410108669.2A CN104929896B (en) | 2014-03-21 | 2014-03-21 | Cold pump and semiconductor processing equipment |
Applications Claiming Priority (1)
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CN201410108669.2A CN104929896B (en) | 2014-03-21 | 2014-03-21 | Cold pump and semiconductor processing equipment |
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CN104929896A CN104929896A (en) | 2015-09-23 |
CN104929896B true CN104929896B (en) | 2017-07-21 |
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CN201410108669.2A Active CN104929896B (en) | 2014-03-21 | 2014-03-21 | Cold pump and semiconductor processing equipment |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108050043A (en) * | 2018-01-04 | 2018-05-18 | 湘潭大学 | A kind of vacuum extractor, pumped vacuum systems and its vacuum pumping method |
CN110173411A (en) * | 2019-06-21 | 2019-08-27 | 北京北方华创微电子装备有限公司 | Cold pump closure and reaction chamber |
CN113046716B (en) * | 2021-03-08 | 2022-09-16 | 北京北方华创微电子装备有限公司 | Cold pump vacuum control device, control method and system thereof and semiconductor processing equipment |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0558495B1 (en) * | 1990-11-19 | 1994-04-20 | Leybold Aktiengesellschaft | Process for regenerating a cryopump and suitable cryopump for implementing this process |
US6122921A (en) * | 1999-01-19 | 2000-09-26 | Applied Materials, Inc. | Shield to prevent cryopump charcoal array from shedding during cryo-regeneration |
CN102734123A (en) * | 2011-04-11 | 2012-10-17 | 住友重机械工业株式会社 | Cryopump system, compressor, and method for regenerating cryopumps |
-
2014
- 2014-03-21 CN CN201410108669.2A patent/CN104929896B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0558495B1 (en) * | 1990-11-19 | 1994-04-20 | Leybold Aktiengesellschaft | Process for regenerating a cryopump and suitable cryopump for implementing this process |
US6122921A (en) * | 1999-01-19 | 2000-09-26 | Applied Materials, Inc. | Shield to prevent cryopump charcoal array from shedding during cryo-regeneration |
CN102734123A (en) * | 2011-04-11 | 2012-10-17 | 住友重机械工业株式会社 | Cryopump system, compressor, and method for regenerating cryopumps |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |