CN219197593U

CN219197593U - Exhaust device of vacuum pump of semiconductor factory building

Info

Publication number: CN219197593U
Application number: CN202320053642.2U
Authority: CN
Inventors: 千强
Original assignee: Changzhou Jungcheonga Semiconductor Technology Co ltd
Current assignee: Changzhou Jungcheonga Semiconductor Technology Co ltd
Priority date: 2023-01-09
Filing date: 2023-01-09
Publication date: 2023-06-16
Anticipated expiration: 2033-01-09

Abstract

The application discloses a semiconductor factory building vacuum pump exhaust apparatus relates to exhaust duct technical field. The vacuum pump exhaust device of the semiconductor factory building comprises a first pipeline and a second pipeline; one end of the first pipeline is connected with the semiconductor chip processing equipment, the other end of the first pipeline is connected with an air inlet of the vacuum pump, an air outlet of the vacuum pump is connected with one end of the second pipeline, and the other end of the second pipeline is connected with the filter; the method is characterized in that: the first pipeline comprises an inner pipe and an outer pipe, wherein the inner pipe is arranged in the outer pipe, annular clamping grooves are formed in the inner walls of the two ends of the outer pipe, annular clamping rings are arranged at positions, corresponding to the clamping grooves, of the inner pipe and the outer pipe, the clamping rings are clamped in the clamping grooves, gaps are formed between the inner pipe and the outer pipe, and a plurality of air holes are formed in the outer side wall of the inner pipe.

Description

Exhaust device of vacuum pump of semiconductor factory building

Technical Field

The application relates to the technical field of exhaust pipelines, in particular to a vacuum pump exhaust device of a semiconductor factory building.

Background

The existing pipeline is a common stainless steel pipeline, and the inner wall of the pipeline is easy to be blocked due to dust adhesion caused by engineering gas, so that safety accidents occur. Because the pipe network is blocked, the pipe diameter is reduced, and the operation of other related equipment connected with the pipe network can be subjected to load, so that the normal operation of the equipment is affected; because of special gas, the pipeline is easy to corrode, the service cycle is short, equipment operation is stopped when the pipeline is replaced each time, and the production efficiency is low, and the economic effect is poor; in terms of technology, the gas passing through the pipeline must be kept in a high temperature state, and the currently used technology is limited to external and pipeline gases; the wall thickness of the stainless steel tube is used for blocking in the stage 1, so that the temperature loss is large, and heating is required to be arranged in a certain interval.

Disclosure of Invention

Therefore, the application provides an exhaust device of a vacuum pump of a semiconductor factory to solve the problems of the technology.

In order to achieve the above object, the present application provides the following technical solutions:

an exhaust device of a vacuum pump of a semiconductor factory building comprises a first pipeline and a second pipeline;

one end of the first pipeline is connected with the semiconductor chip processing equipment, the other end of the first pipeline is connected with an air inlet of the vacuum pump, an air outlet of the vacuum pump is connected with one end of the second pipeline, and the other end of the second pipeline is connected with the filter;

the first pipeline comprises an inner pipe and an outer pipe, wherein the inner pipe is arranged in the outer pipe, annular clamping grooves are formed in the inner walls of the two ends of the outer pipe, annular clamping rings are arranged at positions, corresponding to the clamping grooves, of the inner pipe and the outer pipe, the clamping rings are clamped in the clamping grooves, gaps are formed between the inner pipe and the outer pipe, and a plurality of air holes are formed in the outer side wall of the inner pipe.

Optionally, the second pipe includes a pipe body, a funnel-shaped structure is provided on an inner wall of the pipe body, an inner diameter of the funnel-shaped structure gradually becomes smaller from one end of the vacuum pump to one end of the filter, and a funnel-shaped portion of the second pipe body is connected with the vacuum pumpAn air inlet is arranged between the ends for accessing N ₂ The maximum inner diameter of the funnel-shaped structure is provided with an air outlet along the inclined direction of the funnel-shaped structure, and the air outlet is communicated with the inside of the air inlet.

Optionally, the inner tube is a PTFE tube.

Optionally, the outer tube is a stainless steel tube.

Optionally, the gap between the inner tube and the outer tube is 1.3mm.

Compared with the prior art, the application has the following beneficial effects:

according to the utility model, the first pipeline is arranged between the semiconductor processing equipment and the vacuum pump, the first pipeline is divided into the inner pipe and the outer pipe, the inner pipe and the outer pipe are fixedly sealed through the clamping ring and the clamping groove, and meanwhile, the air hole is arranged on the inner pipe, so that high-temperature gas can stay on the air cavity to play a role in insulating the diaphragm, and heat dissipation loss is prevented.

Through setting up funnel-shaped structure in the pipeline body, form venturi effect, make the velocity of flow of gas in the pipeline body increase, in the inside majority hole around of pipeline simultaneously, high-speed N2 sprays along the inclined plane of funnel form, forms the vacuum around the high-speed N2, and quick suction pump exhausts, increases the suction volume.

Drawings

For a more visual illustration of the prior art and the present application, several exemplary drawings are presented below. It should be understood that the specific shape and configuration shown in the drawings should not be considered in general as limiting upon the practice of the present application; for example, based on the technical concepts and exemplary drawings disclosed herein, those skilled in the art have the ability to easily make conventional adjustments or further optimizations for the add/subtract/assign division, specific shapes, positional relationships, connection modes, dimensional scaling relationships, etc. of certain units (components).

FIG. 1 is a schematic diagram of the overall structure of an embodiment of the present utility model;

FIG. 2 is a schematic view showing an internal structure of a first pipe according to an embodiment of the present utility model;

FIG. 3 is a schematic view of the internal structure of the second pipe in FIG. 1;

FIG. 4 is a schematic view of the outer structure of the second pipe in FIG. 1;

FIG. 5 is a schematic view of the structure of FIG. 4 with A-A partially cut away;

fig. 6 is a schematic view illustrating an internal structure of a first pipe according to another embodiment of the present utility model.

Reference numerals illustrate:

1. a semiconductor processing apparatus; 2. a vacuum pump; 3. a filter; 4. a first pipe; 41. an inner tube; 42. an outer tube; 43. a clamping groove; 44. a gap; 45. air holes; 46. a clasp; 5. a second pipe; 51. a pipe body; 52. a funnel shape; 53. an air inlet; 54. and an air outlet.

Detailed Description

The present application is further described in detail below with reference to the attached drawings.

In the description of the present application: unless otherwise indicated, the meaning of "a plurality" is two or more. The terms "first," "second," "third," and the like in this application are intended to distinguish between the referenced objects without a special meaning in terms of technical connotation (e.g., should not be construed as emphasis on degree or order of importance, etc.). The expressions "comprising", "including", "having", etc. also mean "not limited to" (certain units, components, materials, steps, etc.).

The terms such as "upper", "lower", "left", "right", "middle", and the like, as referred to in this application, are generally used for convenience in visual understanding with reference to the drawings, and are not intended to be an absolute limitation of the positional relationship in actual products. Such changes in relative positional relationship are considered to be within the scope of the present description without departing from the technical concepts disclosed herein.

Referring to fig. 1 and 6, an exhaust device of a vacuum pump 2 for a semiconductor factory building according to the present utility model includes a first pipe 4 and a second pipe 5;

one end of the first pipeline 4 is connected with the semiconductor processing equipment 1, the other end of the first pipeline 4 is connected with an air inlet 53 of the vacuum pump 2, an air outlet 54 of the vacuum pump 2 is connected with one end of the second pipeline 5, and the other end of the second pipeline 5 is connected with the filter 3;

the first pipeline 4 comprises an inner pipe 41 and an outer pipe 42, the inner pipe 41 is arranged in the outer pipe 42, annular clamping grooves 43 are formed in the inner walls of the two ends of the outer pipe 42, annular clamping rings 46 are arranged at positions of the inner pipe 41 corresponding to the clamping grooves 43 on the outer pipe 42, the clamping rings 46 are clamped in the clamping grooves 43, and gaps 44 are formed between the inner pipe 41 and the outer pipe 42.

In order to improve the heat preservation effect, as shown in fig. 2, a plurality of air holes 45 are formed on the outer side wall of the inner tube 41.

The inner tube 41 is a PTFE tube, the outer tube 42 is a stainless steel tube, a gap 44 between the inner tube 41 and the outer tube 42 is 1.3mm, the inner tube 41 is inserted into the outer tube 42 during installation, a clamping groove 43 is formed in the inner rims of two sides of the outer tube 42 so as not to separate the outer tube 42 from the inner tube 41 left and right, a clamping ring 46 is arranged at a position on the inner tube 41 corresponding to the clamping groove 43, and the clamping ring 46 is correspondingly clamped with the clamping groove 43 to play a role in preventing the sealing box from separating; a gap of 1.3mm is arranged between the inner tube 41 and the outer tube 42 to form an air pocket, and the air holes 45 arranged on the inner tube 41 can enable high-temperature gas to stay on the air pocket to play a role in diaphragm heat preservation, so that heat loss of a fan is prevented.

As shown in fig. 1, 3, 4 and 5, the second pipe 5 includes a pipe body 51, a funnel-shaped 52 structure is disposed on an inner wall of the pipe body 51, an inner diameter of the funnel-shaped 52 structure is gradually reduced from one end of the vacuum pump 2 toward one end of the filter 3, an air inlet 53 is formed between a portion of the second pipe 5 body where the funnel-shaped 52 is disposed and a connection end of the vacuum pump 2, the air inlet 53 is used for accessing N2, an air outlet 54 is formed at a position of a maximum inner diameter of the funnel-shaped 52 structure along an inclined direction thereof, and the air outlet 54 is communicated with the air inlet 53.

The high-pressure N2 is sprayed into the exhaust pipeline in the field of semiconductor electronic industry, so that the concentration of the gas is diluted, and residual gas and liquid in the pipeline are pumped out through strong suction power, thereby preventing pipeline corrosion and the like. A device which can improve the problems of equipment and environmental safety. The mixed gas supercharging exhaust device is an innovative design structure comprehensively utilizing the Venturi effect and the Bernoulli principle, has the minimum of 30-40 mmH20 and has strong suction (vacuum) and exhaust capacity [ the suction pressure can be increased by more than 80mmH20 ].

The funnel-shaped 52 can form a venturi effect and a Bernoulli principle inside the pipeline body 51;

venturi effect: the N2 sprayed at high speed is faster along with the reduction of the inner diameter of the pipeline, forms a conical N2 curtain and is strongly sprayed in the exhaust direction. The N2 curtain leaflet forms a powerful air bag which is strongly sucked into the Pump for exhausting, so that the curtain leaflet is in a vacuum state.

In a plurality of holes around the inside of the pipe, high-speed N2 is sprayed along the inclined surface of the funnel shape, vacuum is formed around the high-speed N2, the pump is quickly sucked for exhausting, and the suction amount is increased by about 15 times.

In practical applications, the pipe connecting the vacuum pump 2 and the filter 3 may be replaced by the first pipe 4.

The first pipeline 4 after the improvement of the application has the advantages that:

1. the inner diameter of the dust is compared with that of the dust after the dust is adhered in the same time period, so that the dust accumulation amount is reduced by 50% after improvement;

2. the life time is increased to 60 in the existing 30 days;

3. the used PTFE tube can be reused after being cleaned.

The second pipe 5 after improvement of the present application is different from the second pipe before improvement:

before improvement: power consumption 1170W of the device (pump);

after improvement: the power consumption 1030W of the apparatus (pump) was increased by 1.7 times.

The dimensions of the first conduit 4 and the second conduit 5 of the present utility model can be tailored to the requirements of the production process.

Any combination of the technical features of the above embodiments may be performed (as long as there is no contradiction between the combination of the technical features), and for brevity of description, all of the possible combinations of the technical features of the above embodiments are not described; these examples, which are not explicitly written, should also be considered as being within the scope of the present description.

The foregoing has outlined and detailed description of the present application in terms of the general description and embodiments. It should be appreciated that numerous conventional modifications and further innovations may be made to these specific embodiments, based on the technical concepts of the present application; but such conventional modifications and further innovations may be made without departing from the technical spirit of the present application, and such conventional modifications and further innovations are also intended to fall within the scope of the claims of the present application.

Claims

1. An exhaust device of a vacuum pump of a semiconductor factory building comprises a first pipeline and a second pipeline;

one end of the first pipeline is connected with the semiconductor chip processing equipment, the other end of the first pipeline is connected with an air inlet of the vacuum pump, an air outlet of the vacuum pump is connected with one end of the second pipeline, and the other end of the second pipeline is connected with the filter; the method is characterized in that:

2. The semiconductor factory vacuum pump exhaust device according to claim 1, wherein: the second pipeline comprises a pipeline body, a funnel-shaped structure is arranged on the inner wall of the pipeline body, the inner diameter of the funnel-shaped structure gradually becomes smaller from one end of the vacuum pump to one end of the filter, an air inlet is formed between the funnel-shaped part of the second pipeline body and the connecting end of the vacuum pump, and the air inlet is used for being connected with N ₂ The maximum inner diameter of the funnel-shaped structure is provided with an air outlet along the inclined direction of the funnel-shaped structure, and the air outlet is communicated with the inside of the air inlet.

3. The semiconductor factory vacuum pump exhaust device according to claim 1, wherein: the inner tube is a PTFE tube.

4. The semiconductor factory vacuum pump exhaust device according to claim 1, wherein: the outer tube is a stainless steel tube.

5. The semiconductor factory vacuum pump exhaust device according to claim 1, wherein: the gap between the inner tube and the outer tube is 1.3mm.