CN105280518A - Semiconductor substrate heat treatment device - Google Patents
Semiconductor substrate heat treatment device Download PDFInfo
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- CN105280518A CN105280518A CN201410238135.1A CN201410238135A CN105280518A CN 105280518 A CN105280518 A CN 105280518A CN 201410238135 A CN201410238135 A CN 201410238135A CN 105280518 A CN105280518 A CN 105280518A
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Abstract
The concept of "smart city, smart life" is deeply rooted among people. People also have increasingly high technological requirement for semiconductor products. Acting as an important step of the semiconductor processing procedure, a substrate heat treatment device constantly wins public attention, and ensuring of even heating of a wafer in the heating procedure is always a difficult problem to practitioners. The invention provides a semiconductor substrate heat treatment device comprising an exhaust device and a heating cavity. Nitrogen is filled in the heating cavity in the heating procedure, and heat is indirectly transmitted to the surface of the wafer by nitrogen so that the problem uneven heating caused by warping of the wafer can be eliminated.
Description
Technical field
The present invention relates to the manufacture field of semiconductor device, more particularly, relate to a kind of annealing device of semiconductor substrate.
Background technology
The theory of " intelligent city, Intelligent life " is constantly rooted in the hearts of the people, and the demand of people to precision electronic device and integrated circuit is also more fervent.The powerful market demand has promoted the prosperity of semiconductor machining and manufacturing, has also enriched with refinement the processing technology of semiconductor device greatly.And in the middle of processing technology of numerous names, device wafer being carried out to heat treated gets most of the attention all the time.
The conventional design of wafer annealing device is: airtight chamber, is provided with heater in airtight chamber, and wafer is placed on it heat-treats, and can complete heating process.Utilize this device to heat-treat wafer directly simple, but also there is flaw, ignore the key factor that much may have a strong impact on wafer quality.
Such as, these those skilled in the art ought to know, crystal circle structure is very accurate, very responsive to environmental parameters such as temperature in heating process, any small deviation all may affect the change of inside wafer structure, finally gently then affect the product quality produced, heavy then wafer is directly scrapped, and can not come into operation.Therefore, in heat treatment process, guarantee that wafer is heated evenly highly beneficial to the protection of crystal circle structure.But, even if naked eyes seem very smooth wafer, also inevitably there is deformation warpage to a certain degree, these warpages or be presented as the epirelief of a crystal column surface part, or be presented as the recessed of certain part, or the two has it concurrently.No matter which kind of situation above-mentioned, all will cause wafer being heated in heating process uneven.This uneven impact of being heated is even more serious by what embody when heat-treating ultra-thin wafers!
Additionally, the Technology for Heating Processing of wafer is often a certain intermediate steps in numerous processing technology, and wafer may experienced by one or more in the techniques such as polishing, development or etching before this.In the middle of these techniques above-mentioned, meeting without exception involves various organic solvent or steam, if that removes is unclean, the residual gentle cognition of liquid is volatilized precipitation in heating process, be easy to form the uniformity that gas turbulence destroys chamber air-flow, and then adverse effect is caused to the being heated evenly property of wafer.
Summary of the invention
Therefore, main purpose of the present invention is, provides a kind of device, when wafer being heat-treated to solve, wafer be heated evenly sex chromosome mosaicism.
In order to achieve the above object, the invention provides following technical scheme:
A kind of annealing device of semiconductor substrate, comprise exhaust apparatus and heated chamber, described exhaust apparatus at least has an exhaust port, and this exhaust port connects extraneous gas extraction system, described exhaust apparatus at least has a steam vent, and this steam vent is communicated with this heated chamber;
Described heated chamber comprises:
Door, opening or closing of described door is all controlled;
Thermal source;
Temperature sensor;
Adiabatic pedestal, described adiabatic pedestal is used for carrying and fixing thermal source, and the space of gas circulation is left in the top of described adiabatic pedestal, and the space of gas circulation is left in the below of described adiabatic pedestal;
Support bar, described support bar runs through described adiabatic pedestal and described thermal source, and described support bar is used for supporting wafer, and described support bar keeps wafer level;
Lifting tray, described lifting tray connects the bottom of described support bar, the rising of described lifting tray and descend through drive unit and regulate;
Air feeding in center mouth, described air feeding in center mouth is positioned at the center of described adiabatic pedestal and thermal source and runs through described adiabatic pedestal and thermal source, and described air feeding in center mouth connects extraneous air supply system;
Air inlet through hole;
Wherein, described adiabatic pedestal offers inlet channel around described thermal source, described inlet channel is communicated with underlying space and the superjacent air space of described adiabatic pedestal, and the gas entered from described air inlet through hole flows into this inlet channel.
Further, described exhaust apparatus is positioned at the top of described heated chamber, and described exhaust apparatus comprises exhaust cavity, described steam vent be positioned at described exhaust cavity lower surface and.
Preferably, described door is positioned at the sidewall of described heated chamber, and opening or closing of described door is controlled by cylinder.
Further, described door is opened when wafer enters or take out, and described door keeps closing in heating process.
Preferably, described thermal source is electric boiling plate, and the material of described thermal source is metal or pottery, and the upper surface of described electric boiling plate is provided with at least three anti-skid stud.
Preferably, the inside of described thermal source is integrated with at least one temperature sensor, and described temperature sensor is for monitoring the temperature of described thermal source, and described temperature sensor is thermocouple.
Preferably, described thermal source is placed on the inside of described adiabatic pedestal, there is gap between the side week of described thermal source and described adiabatic pedestal.
Preferably, the material of described adiabatic pedestal is pottery or asbestos.
Further, described support bar comprises anti-skid stud and strut, and described anti-skid stud is positioned at the upper end of described support bar, and the bottom of described support bar is bolted to connection on described lifting tray.
Preferably, described drive unit is servo motor, and described servo motor by controlling the rise and fall of lifting tray, and then controls the height of wafer apart from described thermal source.
Further, pass into nitrogen in the mouth of air feeding in center described in heating process, in described air feeding in center mouth, the temperature of nitrogen and flow are regulated by described air supply system.
Further, described exhaust cavity comprises handle, set bolt and slide rail, described slide rail totally two, and described two slide rails are parallel to each other and lay respectively on two ribs below described exhaust cavity.
Sum up above-mentioned known, in heat treatment process, the hot nitrogen in air feeding in center mouth is the medium that heat transmits, and due to the mobility of gas, can be good at solving because wafer that warpage is brought is heated problem of non-uniform.Meanwhile, be positioned at the inlet channel offered on adiabatic pedestal and round thermal source, as the air intake that heated chamber is unique, sinuous flow impact can be eliminated, volatilization bubbing is discharged by exhaust apparatus.
Accompanying drawing explanation
Fig. 1 is the overall schematic of annealing device specific embodiment of the present invention;
Fig. 2 is the cutaway view of annealing device specific embodiment of the present invention;
Fig. 3 is the another cutaway view of annealing device specific embodiment of the present invention;
Fig. 4 is the perspective view of annealing device specific embodiment of the present invention when overlooking;
Fig. 5 is the structural representation of support bar of the present invention;
Fig. 6 is the schematic diagram of wafer surface temperature distribution when not passing into hot nitrogen in heat treatment process of the present invention;
Fig. 7 is the schematic diagram of wafer surface temperature distribution when passing into hot nitrogen in heat treatment process of the present invention.
Embodiment
In order to elaborate Spirit Essence of the present invention, help those skilled in the art conscientiously, comprehensively to understand complete skill scheme of the present invention, below in conjunction with embodiment and figure be explained:
Accompanying drawing 1-4 illustrates each architectural feature of annealing device specific embodiment of the present invention.
Fig. 1-3 has carried out displaying of overall importance to wafer annealing device of the present invention.This annealing device comprises exhaust apparatus and a heated chamber 102.Described exhaust apparatus comprises an exhaust cavity 101 in cuboid, and the slide rail 103 be parallel to each other by two supports, and is placed in the top of heated chamber 102.Described two slide rails 103 lay respectively on two ribs below cuboid exhaust cavity 101, and exhaust cavity 101 can slide along slide rail 103 thus.Further, the below of described exhaust cavity 101 offers a circular steam vent 104, this steam vent 104 is communicated with the inside of heated chamber 102, allow the gas in heated chamber 102 to enter in exhaust cavity 101 by this steam vent 104, discharge eventually through the exhaust port 105 that exhaust cavity is offered.Described exhaust port 105 is connected to extraneous gas extraction system.Described gas extraction system can produce negative pressure in exhaust cavity 101, helps the gas in cavity to enter extraneous gas extraction system, and thoroughly discharges.This exhaust cavity 101 is also being provided with a handles 106 and two set bolts 201 along on a side in slide rail 103 direction, described handle 106 is for pull-out or push exhaust cavity 101, and described set bolt 201 is for the position of fixing described exhaust cavity 101.Can the air-tightness of assurance device after exhaust cavity 101 pushes in heating process, and when needs cleaning device, this design supported by slide rail 103 is by the clean of the equipment of being very beneficial for and safeguard.
Heated chamber 102 is airtight chambers, it offers the door 107 of a strip on a sidewall, and described door 107 is controlled by cylinder, opens when wafer 108 is admitted to or sends cavity, keep when technical process is carried out closing, thus guarantee that heated chamber 102 is isolated from the outside.Described door 107 can vertically move up and down in the process opened and closed.Additionally, each sidewall of described heated chamber 102 and door 107 can be made by resistant to elevated temperatures encapsulant, preferably, have employed double-layer stainless steel material, can accompany asbestos between two-layer stainless steel.
In described heated chamber 102, also set has a thermal source and an adiabatic pedestal 110, and described thermal source can be more particularly a circular electric boiling plate 109.Described electric boiling plate 109 can be a thin flat plate be made up of metallic aluminium, and in heating process, the Temperature Distribution on this electric boiling plate 109 surface is very even.The size of described electric boiling plate 109 can depend on the circumstances, in view of wafer relatively more conventional on the market is at present generally 8 inch wafer and 12 inch wafer, so the dimensions that this electric boiling plate 109 adopts is diameter can be that the circle of 350mm is dull and stereotyped, so this also makes this annealing device can compatible 8 inches/12 inch wafer substrates, the single-wafer substrate of different size is heat-treated.Natch, this electric boiling plate 109 can also do more, with other sizes compatible.
Further, described electric boiling plate 109 can be placed on the inside of adiabatic pedestal 110, the center of this adiabatic pedestal 110 and the center alignment of electric boiling plate 109.Although electric boiling plate 109 is the inside being positioned over adiabatic pedestal 110 completely, but adiabatic pedestal 110 is not tamped completely, its side week does not closely touch adiabatic pedestal 110 yet, but there is certain external series gap 202, the setting of this external series gap 202 is in order to avoid the temperature characterisitic of electric boiling plate 109 side is affected, and also eliminates electric boiling plate 109 causes extruding in expanded by heating situation impact on adiabatic pedestal 110 simultaneously.Can also be integrated with temperature sensor in described heated chamber 102, in chamber, especially the temperature of electric boiling plate 109 carries out monitoring to regulate and control.Described temperature sensor is preferably thermocouple 203, in order to enable measurement more accurate, usually thermocouple 203 is set directly at the inside of electric boiling plate 109, generally invisible.
Described adiabatic pedestal 110 is made up of resistant to elevated temperatures material, is preferably pottery.Adiabatic pedestal 110 offers the circular inlet channel of a circle 111, and described inlet channel 111 is distributed in the periphery of electric boiling plate 109, around and enclose electric boiling plate 109.Described inlet channel 111 has been communicated with superjacent air space 204 and the underlying space 205 of adiabatic pedestal 110.Described superjacent air space 204 allows gas to circulate, and described underlying space 205 allows gas to circulate.Described inlet channel 111 is the unique air intakes of heated chamber 102.In heating process, the air inculcated into by air inlet through hole 207 is flowed into inlet channel 111 and circulates in heating cavity 102, and discharged by steam vent 104 by exhaust cavity 101, the flowing that the uniform stream of whole inside cavity is orderly, avoid the sinuous flow impact that the volatilization bubbings such as other organic solvents produce, thus ensure that the being heated evenly property of wafer 108.The inlet channel 111 preferably annular corresponding with wafer 108 shape is arranged, and can ensure that air-flow is from the even air inlet of wafer 108 surrounding like this, the path of whole air-flow flows to the less steam vent of pressure 104 by inlet channel 111 substantially, can not produce interference sinuous flow.
Additionally, will be positioned horizontally on support bar 112 after wafer 108 enters heated chamber 102.Because 3 are determined the principle of a plane, described support bar 112 is preferably three, and the height of three support bars 112 flushes, to ensure that wafer 108 is positioned horizontally all the time in heating process, thermally equivalent.Described support bar 112 runs through electric boiling plate 109 and adiabatic pedestal 110.The bottom of described support bar 112 is fixed on a lifting tray 113 by bolt 208.Described lifting tray 113 can rise or decline by the vertical direction, correspondingly drive support bar 112 to do to rise or descending motion, and then play the effect of control wafer 108 at heating process middle distance electric boiling plate 109 height, the heating degree of wafer 108 can be regulated thus, on request wafer 108 is heat-treated.Wherein Fig. 2 be wafer 108 higher apart from electric boiling plate 109 when the schematic diagram that heats, and schematic diagram when Fig. 3 heats when to be wafer 109 lower apart from electric boiling plate 109 position.The lifting of described lifting tray 113 controls by a drive unit, can be more particularly a servo motor 209 being positioned at a certain angle of heated chamber 109.This servo motor 209 place can also be integrated with other control systems and system, makes corresponding control and adjustment according to the program arranged to annealing device.
At the center of described electric boiling plate 109 and adiabatic pedestal 110, an air feeding in center mouth 210 can be had, be responsible for the inert gas from the below supply heat of wafer 108 in heating process.Described inert gas is preferably nitrogen.Described air feeding in center mouth 210 runs through electric boiling plate 109 and adiabatic pedestal 110, and described air feeding in center mouth 210 is connected to extraneous air supply system.In heating process, be filled with hot nitrogen in air feeding in center mouth 210, hot nitrogen evenly, stably flowed below wafer 108, accepts the heating of electric boiling plate 109, and heat is passed to wafer 108, thus the problem of non-uniform of being heated because wafer 108 warpage causes can be eliminated.The hot nitrogen of trace is filled between wafer 108 and electric boiling plate 109, eliminate warpage wafer difference in height everywhere, the temperature of adding the hot nitrogen passed into has been adjusted to consistent with the temperature of electric boiling plate 109 under normal circumstances by extraneous air supply system, so wafer 108 temperature difference everywhere in heating process almost can be ignored, heated equably.This device is not only applicable to the wafer of standard thickness, and because the warping phenomenon of ultra-thin wafers is usually even more serious, so when processing ultra-thin wafers, its advantage is more obvious by what embody.Whether hot nitrogen in described air feeding in center mouth 210 fills and the temperature of hot nitrogen and flow velocity are all can carry out regulation and control by the control system of extraneous supply air line, if the hot nitrogen in air feeding in center mouth 210 is undesirable, system also can report to the police to remind operator.In order to raise the efficiency, generally the hot nitrogen temperature in air feeding in center mouth 210 is arranged to the temperature consistent with electric boiling plate 109.
Described annealing device also has compressed air interface 211 and nitrogen interface 212, provides gas required in heat treatment process.
Fig. 4 is the perspective view of annealing device of the present invention when overlooking.Two circular dashed line in figure respectively show this annealing device when heating 8 inch wafer 402 and heating 12 inch wafer 403, the correspondence position of 8 inch wafer 402 and 12 inch wafer 403 in heated chamber 102.Additionally, also illustrate in figure, the upper surface of described electric boiling plate 109 is distributed with some anti-skid stud 401.Preferably, the number of described anti-skid stud 401 is three, and the angle that described adjacent two anti-skid stud 401 and the center of electric boiling plate 109 are formed is 120 °.Meanwhile, described anti-skid stud 401 can be positioned at on the same circle that is the center of circle of the center of electric boiling plate 109.There is the consideration of drift in the design of anti-skid stud 401, the distribution mode of its uniqueness contributes to still stablizing when keeping wafer 108 to touch anti-skid stud 401, is not subjected to displacement when being the positions for preventing wafer 108 from dropping to close to electric boiling plate 109.
Overlook annealing device, can see that the arrangement of described support bar 112 is also very regular, in three support bars 112, the angle that adjacent two support bars 112 and the center of electric boiling plate 109 are formed is 120 °, and described support bar 112 can be positioned at on the same circle that is the center of circle of the center of electric boiling plate 109, can stably supporting wafer 108 and keep wafer 108 to be in level all the time.
Fig. 5 discloses support bar concrete structure of the present invention, and has made further displaying to the structure of support bar 112.
The support bar 112 used in this annealing device comprises anti-skid stud 501 and strut 502.Described anti-skid stud 501 is positioned at the top of support bar 112, and this anti-skid stud 501 can adopt the mode of thread lock to connect as one with the strut 502 being positioned at below, can dismantle easily and change.Natch, described anti-skid stud 501 and the connected mode of strut 502 do not only have screw thread to twist solid one.Anti-skid stud 501 has anti-skidding effect, wafer 108 can be prevented to be placed on wafer 108 when support bar 112 moves up and down with bar skew of sliding occurs in the horizontal direction.
Fig. 6 and Fig. 7 is the specific embodiment using annealing device of the present invention, pass in air feeding in center mouth 210/do not pass into hot nitrogen situation under the contrast of wafer 108 surface temperature gradient made.
, generally all there is distortion warpage to a certain degree in wafer, particularly ultra-thin wafers, as shown in the schematic diagram on the left of Fig. 6,7, reflects three kinds of multi-form warpages, that is: the recessed and existing epirelief of crystal column surface of crystal column surface epirelief, crystal column surface has again recessed.The no matter warpage of which kind of form, if directly heated wafer by thermal source (as electric boiling plate), because the distance (h) on wafer between each point and electric boiling plate is not identical, and there is temperature gradient in the distribution of electric boiling plate surface space temperature upwards, in fact some heating temperature t (h) of crystal column surface diverse location is relevant with the height h of this some distance electric boiling plate, as shown in the schematic diagram on the right side of Fig. 6, thus distortion warpage can affect the uniformity of wafer entirety heating, causes wafer to produce defect in heat treatment process.The specific embodiment of the annealing device of the present invention just shown in Fig. 6 heats the situation of illogical nitrogen to wafer.
Fig. 7 is then just in time contrary, said apparatus is utilized to heat wafer, after passing into micro-hot nitrogen by air feeding in center mouth 210 between wafer lower surface and electric boiling plate, because the nitrogen temperature that passes into is general identical with the temperature of electric boiling plate and gas has mobility, which kind of can ensure no matter under the warped state of form, above electric boiling plate, in certain space, the temperature of each point is all identical, as shown in the schematic diagram on the right side of Fig. 7, there is not temperature gradient, thus ensure that the uniformity of heating, overcome and heat a uneven difficult problem to during wafer heat treatment.
Can be summed up as the process that wafer is heat-treated: before wafer 108 heating process starts, 3 support bars 112 on electric boiling plate 109 surface rise to pre-set assigned address under the control of servo motor 209, the door 107 of heated chamber 102 side is opened, full-automatic mechanical hand is sent on the support bar 112 above electric boiling plate 109 by needing process wafer 108, exit from heated chamber 102 after manipulator completes transmission, cavity door 107 closes the process environments being formed and close; Wafer 108 heat treatment process is determined by pre-set heating schedule.Heating process can arrange multiple step and perform successively, and multiple heating steps can set in heating schedule.Each step can arrange this step heat treated time, whether the temperature of heating plate, the temperature of hot nitrogen, hot nitrogen use and the height of wafer 108; After completing wafer 108 heating according to heating schedule, 3 support bars 112 on electric boiling plate 109 surface rise to pre-set assigned address under the control of servo motor 209, the door 107 of process cavity side is opened, heat treatment completes and takes out from cavity wafer 108 by full-automatic mechanical hand, and cavity door 107 is closed.
Further, this annealing device can as semiconductor processing tools, and a heating unit of such as developing machine platform, becomes the equipment completed with other chamber or unit set.
The claims book and specification have all carried out full and accurate, careful description to design original intention of the present invention, implementation and technique effect; know that this field existent technique personnel understand all kinds of change being directed to this invention done by invention spirit and derivative design according to foregoing, all should be defined as fall into scope and bear corresponding risk of infringement.
Claims (13)
1. the annealing device of a semiconductor substrate, it is characterized in that, comprise exhaust apparatus and heated chamber, described exhaust apparatus at least has an exhaust port, this exhaust port connects extraneous gas extraction system, described exhaust apparatus at least has a steam vent, and this steam vent is communicated with this heated chamber;
Described heated chamber comprises:
Door, opening or closing of described door is all controlled;
Thermal source;
Temperature sensor;
Adiabatic pedestal, described adiabatic pedestal is used for carrying and fixing thermal source, and the space of gas circulation is left in the top of described adiabatic pedestal, and the space of gas circulation is left in the below of described adiabatic pedestal;
Support bar, described support bar runs through described adiabatic pedestal and described thermal source, and described support bar is used for supporting wafer, and described support bar keeps wafer level;
Lifting tray, described lifting tray connects the bottom of described support bar, the rising of described lifting tray and descend through drive unit and regulate;
Air feeding in center mouth, described air feeding in center mouth is positioned at the center of described adiabatic pedestal and thermal source and runs through described adiabatic pedestal and thermal source, and described air feeding in center mouth connects extraneous air supply system;
Air inlet through hole;
Wherein, described adiabatic pedestal offers inlet channel around described thermal source, described inlet channel is communicated with underlying space and the superjacent air space of described adiabatic pedestal, and the gas entered from described air inlet through hole flows into this inlet channel.
2. annealing device according to claim 1, is characterized in that, described exhaust apparatus is positioned at the top of described heated chamber, and described exhaust apparatus comprises exhaust cavity, and described steam vent is positioned at the lower surface of described exhaust cavity.
3. annealing device according to claim 1, is characterized in that, described door is positioned at the sidewall of described heated chamber, and opening or closing of described door is controlled by cylinder.
4. annealing device according to claim 3, is characterized in that, described door is opened when wafer enters or take out, and described door keeps closing in heating process.
5. annealing device according to claim 1, is characterized in that, described thermal source is electric boiling plate, and the material of described thermal source is metal or pottery, and the upper surface of described electric boiling plate is provided with at least three anti-skid stud.
6. annealing device according to claim 1, is characterized in that, the inside of described thermal source is integrated with at least one temperature sensor, and described temperature sensor is for monitoring the temperature of described thermal source, and described temperature sensor is thermocouple.
7. annealing device according to claim 1, is characterized in that, described thermal source is placed on the inside of described adiabatic pedestal, there is gap between the side week of described thermal source and described adiabatic pedestal.
8. annealing device according to claim 1, is characterized in that, the material of described adiabatic pedestal is pottery or asbestos.
9. annealing device according to claim 1, is characterized in that, described support bar comprises anti-skid stud and strut, and described anti-skid stud is positioned at the upper end of described support bar, and the bottom of described support bar is bolted to connection on described lifting tray.
10. annealing device according to claim 1, is characterized in that, described drive unit is servo motor, and described servo motor by controlling the rise and fall of lifting tray, and then controls the height of wafer apart from described thermal source.
11. annealing devices according to claim 1, is characterized in that, pass into nitrogen in the mouth of air feeding in center described in heating process, and in described air feeding in center mouth, the temperature of nitrogen and flow are regulated by described air supply system.
12. annealing devices according to claim 11, is characterized in that, the temperature of described nitrogen is consistent with the temperature of described electric boiling plate.
13. annealing devices according to claim 2, it is characterized in that, described exhaust cavity comprises handle, set bolt and slide rail further, described slide rail totally two, and described two slide rails are parallel to each other and lay respectively on two ribs below described exhaust cavity.
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| TWI731913B (en) * | 2016-03-18 | 2021-07-01 | 大陸商盛美半導體設備（上海）股份有限公司 | Substrate heat treatment device |
| KR20180127390A (en) * | 2016-03-18 | 2018-11-28 | 에이씨엠 리서치 (상하이) 인코포레이티드 | Substrate heat treatment apparatus |
| CN109075102A (en) * | 2016-03-18 | 2018-12-21 | 盛美半导体设备（上海）有限公司 | Substrate annealing device |
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| KR102447723B1 (en) | 2016-03-18 | 2022-09-27 | 에이씨엠 리서치 (상하이) 인코포레이티드 | Substrate heat treatment device |
| WO2017156758A1 (en) * | 2016-03-18 | 2017-09-21 | Acm Research (Shanghai) Inc. | Substrate heat treatment apparatus |
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| CN107741658A (en) * | 2017-10-25 | 2018-02-27 | 武汉华星光电技术有限公司 | A kind of panel apparatus for baking |
| WO2019080145A1 (en) * | 2017-10-25 | 2019-05-02 | 武汉华星光电技术有限公司 | Panel baking device |
| CN107583839A (en) * | 2017-10-25 | 2018-01-16 | 武汉华星光电技术有限公司 | A kind of panel apparatus for baking |
| CN110466243B (en) * | 2018-05-11 | 2022-08-23 | 重庆莱宝科技有限公司 | Automatic silk-screen printing method |
| CN110466243A (en) * | 2018-05-11 | 2019-11-19 | 重庆莱宝科技有限公司 | A kind of automatic silk screen printing method |
| CN112219272B (en) * | 2018-06-05 | 2021-12-21 | 科磊股份有限公司 | In-situ temperature sensing substrate, system and method |
| CN112219272A (en) * | 2018-06-05 | 2021-01-12 | 科磊股份有限公司 | In-situ temperature sensing substrate, system and method |
| CN109439850A (en) * | 2018-12-25 | 2019-03-08 | 内蒙古科技大学 | A kind of material magnetic heat treatment system |
| CN110488166A (en) * | 2019-08-30 | 2019-11-22 | 哈尔滨理工大学 | A kind of thermally stimulated current device measuring different-thickness solid insulation |
| CN111863670A (en) * | 2020-07-31 | 2020-10-30 | 芯米(厦门)半导体设备有限公司 | Wafer hot plate structure |
| CN115566531A (en) * | 2022-09-08 | 2023-01-03 | 北京融为科技有限公司 | Laser transceiver with high-reliability temperature control structure and optical telescope |
| CN115566531B (en) * | 2022-09-08 | 2023-08-15 | 北京融为科技有限公司 | Laser transceiver with high-reliability temperature control structure and optical telescope |
| CN118099036A (en) * | 2024-03-08 | 2024-05-28 | 苏州热传道集成电路科技有限公司 | Circulation water-cooled wafer heat treatment cavity |
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Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Applicant after: Shengmei semiconductor equipment (Shanghai) Co., Ltd Address before: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Cailun Road No. fourth 1690 Applicant before: ACM (SHANGHAI) Inc. |
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